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1. 发明申请

US20070042519A1 Manufacturing method of solid-state imaging device and solid-state imaging device 失效
标题翻译：固态成像装置和固态成像装置的制造方法
公开(公告)号：US20070042519A1
公开(公告)日：2007-02-22
申请号：US11504648
申请日：2006-08-16
申请人： Yuko Nomura , Shinji Uya
发明人： Yuko Nomura , Shinji Uya
IPC分类号： H01L21/00
CPC分类号： H01L27/14887 , H01L27/14689
摘要： A manufacturing method of a solid-state imaging device, the device comprising: a semiconductor substrate; photodiodes each comprising a surface-side first conductivity type region formed adjacent to a surface of the semiconductor substrate and a second conductivity type region provided directly under the surface-side first conductivity type region; a second conductivity type vertical transfer region provided in the vicinity of the surface-side first conductivity type region; at least one first conductivity type inter-pixel isolation region provided under the vertical transfer region; and at least one first conductivity type overflow barrier region provided below the first conductivity type inter-pixel isolation region, the method comprising: a first step of forming the first conductivity type overflow barrier region in a semiconductor substrate; and a second step of ion-implanting first conductivity type impurity ions from a direction in which channeling tends to occur, to form at least one of the first conductivity type inter-pixel isolation region.
摘要翻译：一种固态成像装置的制造方法，所述装置包括：半导体衬底; 每个光电二极管包括与半导体衬底的表面相邻形成的表面侧第一导电类型区域和直接位于表面侧第一导电类型区域下方的第二导电类型区域; 设置在表面侧第一导电类型区域附近的第二导电型垂直传输区域; 设置在垂直传送区域下方的至少一个第一导电类型的像素间隔离区域; 以及设置在所述第一导电型像素间隔离区域的下方的至少一个第一导电型溢出阻挡区域，所述方法包括：在半导体衬底中形成所述第一导电型溢出阻挡区域的第一步骤; 以及从倾向于发生沟道的方向离子注入第一导电型杂质离子的第二步骤，以形成第一导电类型像素间隔离区域中的至少一个。

2. 发明申请

US20060043511A1 Solid state image pickup device and its manufacture method 审中-公开
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US20060043511A1
公开(公告)日：2006-03-02
申请号：US11188646
申请日：2005-07-26
申请人： Yuko Nomura , Shinji Uya
发明人： Yuko Nomura , Shinji Uya
IPC分类号： H01L31/0232
CPC分类号： H01L27/14887
摘要： A solid state image pickup device is provided which includes: charge accumulation regions disposed in a semiconductor substrate in a matrix shape; a plurality of vertical transfer channels formed in the semiconductor substrate each in a close proximity to each column of the charge accumulation regions; vertical transfer electrodes formed above the vertical transfer channels; a channel protective impurity layer formed just under the vertical transfer channel and surrounding the charge accumulation region; one or more pixel separation impurity layers formed under the channel protective impurity layer and at a position facing the channel protective impurity layer; an overflow barrier region having a peak position of an impurity concentration at a position deeper than the pixel separation impurity layer, the peak position of the impurity concentration being at a depth of 3 μm or deeper from a surface of the semiconductor substrate; and a horizontal CCD for transferring signal charges transferred from the vertical transfer channels in a horizontal direction.
摘要翻译：提供一种固态图像拾取装置，其包括：以矩阵形状设置在半导体衬底中的电荷累积区域; 形成在所述半导体衬底中的多个垂直传输沟道，每个垂直传输沟道彼此靠近所述电荷累积区的每一列; 垂直传输电极形成在垂直传输通道上方; 形成在垂直传输通道正下方并围绕电荷累积区的沟道保护性杂质层; 一个或多个像素分离杂质层，形成在沟道保护杂质层下面和与沟道保护杂质层相对的位置; 具有在比所述像素分离杂质层更深的位置处的杂质浓度的峰值位置的溢出阻挡区域，所述杂质浓度的峰值位置距所述半导体基板的表面为3μm以下的深度; 以及用于从水平方向传送从垂直传送通道传送的信号电荷的水平CCD。

3. 发明授权

US07736937B2 Manufacturing method of solid-state imaging device and solid-state imaging device 失效
标题翻译：固态成像装置和固态成像装置的制造方法
公开(公告)号：US07736937B2
公开(公告)日：2010-06-15
申请号：US11504648
申请日：2006-08-16
申请人： Yuko Nomura , Shinji Uya
发明人： Yuko Nomura , Shinji Uya
IPC分类号： H01L21/00
CPC分类号： H01L27/14887 , H01L27/14689
摘要： A manufacturing method of a solid-state imaging device, the device comprising: a semiconductor substrate; photodiodes each comprising a surface-side first conductivity type region formed adjacent to a surface of the semiconductor substrate and a second conductivity type region provided directly under the surface-side first conductivity type region; a second conductivity type vertical transfer region provided in the vicinity of the surface-side first conductivity type region; at least one first conductivity type inter-pixel isolation region provided under the vertical transfer region; and at least one first conductivity type overflow barrier region provided below the first conductivity type inter-pixel isolation region, the method comprising: a first step of forming the first conductivity type overflow barrier region in a semiconductor substrate; and a second step of ion-implanting first conductivity type impurity ions from a direction in which channeling tends to occur, to form at least one of the first conductivity type inter-pixel isolation region.
摘要翻译：一种固态成像装置的制造方法，所述装置包括：半导体衬底; 每个光电二极管包括与半导体衬底的表面相邻形成的表面侧第一导电类型区域和直接位于表面侧第一导电类型区域下方的第二导电类型区域; 设置在表面侧第一导电类型区域附近的第二导电型垂直传输区域; 设置在垂直传送区域下方的至少一个第一导电类型的像素间隔离区域; 以及设置在所述第一导电型像素间隔离区域的下方的至少一个第一导电型溢出阻挡区域，所述方法包括：在半导体衬底中形成所述第一导电型溢出阻挡区域的第一步骤; 以及从倾向于发生沟道的方向离子注入第一导电型杂质离子的第二步骤，以形成第一导电类型像素间隔离区域中的至少一个。

4. 发明申请

US20050045975A1 Solid state imaging device with inner lens and manufacture thereof 失效
标题翻译：具有内透镜及其制造的固态成像装置
公开(公告)号：US20050045975A1
公开(公告)日：2005-03-03
申请号：US10823660
申请日：2004-04-14
申请人： Ryuji Kondo , Shinji Uya , Yuko Nomura
发明人： Ryuji Kondo , Shinji Uya , Yuko Nomura
IPC分类号： H01L27/14 , H01L27/148 , H01L27/15 , H04N5/335 , H04N5/372
CPC分类号： H01L27/14618 , H01L27/14627 , H01L27/14806 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure is formed which has photosensors, vertical CCDs, a horizontal CCD and a light shielding film. A first insulating layer made of additive-containing silicon oxide is formed on the semiconductor structure. It is reflowed and upward and downward convex inner lenses are formed on the reflowed first insulating layer and above the photosensors. A second insulating layer is formed which covers the inner lenses and is made of silicon oxide based insulator. It is planarized. Color filters are formed on the planarized surface of the second insulating layer. A transparent flat layer made of transparent material is formed covering the color filters. Micro lenses are formed on the transparent flat layer. A low refractive index layer having a refractive index lower than the micro lenses is formed covering the micro lenses. A transparent plate is disposed on it. The semiconductor structure disposed with the transparent plate is packaged.
摘要翻译：形成具有光电传感器，垂直CCD，水平CCD和遮光膜的半导体结构。在半导体结构上形成由含添加剂的氧化硅构成的第一绝缘层。在回流的第一绝缘层和光电传感器的上方形成向上和向下凸的内透镜。形成覆盖内透镜并由氧化硅基绝缘体制成的第二绝缘层。平面化滤色器形成在第二绝缘层的平坦化表面上。形成由透明材料制成的透明平坦层，覆盖滤色器。微透镜形成在透明平坦层上。覆盖微透镜的是形成折射率低于微透镜的低折射率层。在其上设置透明板。封装有透明板的半导体结构。

5. 发明授权

US07776643B2 Solid state image pickup device and its manufacture method 失效
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US07776643B2
公开(公告)日：2010-08-17
申请号：US12135517
申请日：2008-06-09
申请人： Yuko Nomura , Shinji Uya
发明人： Yuko Nomura , Shinji Uya
IPC分类号： H01L21/20 , H01L21/265
CPC分类号： H01L27/14887
摘要： A solid state image pickup device is provided which includes: charge accumulation regions disposed in a semiconductor substrate in a matrix shape; a plurality of vertical transfer channels formed in the semiconductor substrate each in a close proximity to each column of the charge accumulation regions; vertical transfer electrodes formed above the vertical transfer channels; a channel protective impurity layer formed just under the vertical transfer channel and surrounding the charge accumulation region; one or more pixel separation impurity layers formed under the channel protective impurity layer and at a position facing the channel protective impurity layer; an overflow barrier region having a peak position of an impurity concentration at a position deeper than the pixel separation impurity layer, the peak position of the impurity concentration being at a depth of 3 μm or deeper from a surface of the semiconductor substrate; and a horizontal CCD for transferring signal charges transferred from the vertical transfer channels in a horizontal direction.
摘要翻译：提供一种固态图像拾取装置，其包括：以矩阵形状设置在半导体衬底中的电荷累积区域; 形成在所述半导体衬底中的多个垂直传输沟道，每个垂直传输沟道彼此靠近所述电荷累积区的每一列; 垂直传输电极形成在垂直传输通道上方; 形成在垂直传输通道正下方并围绕电荷累积区的沟道保护性杂质层; 一个或多个像素分离杂质层，形成在沟道保护杂质层下面和与沟道保护杂质层相对的位置; 具有在比所述像素分离杂质层更深的位置处的杂质浓度的峰值位置的溢出阻挡区域，所述杂质浓度的峰值位置距所述半导体衬底的表面为3μm以下的深度; 以及用于从水平方向传送从垂直传送通道传送的信号电荷的水平CCD。

6. 发明申请

US20070023852A1 Solid-state image sensing device producing method and solid-state image sensing device 审中-公开
标题翻译：固态摄像装置制作方法及固态摄像装置
公开(公告)号：US20070023852A1
公开(公告)日：2007-02-01
申请号：US11492880
申请日：2006-07-26
申请人： Haru Okawa , Shinji Uya , Yuko Nomura
发明人： Haru Okawa , Shinji Uya , Yuko Nomura
IPC分类号： H01L31/00
CPC分类号： H01L27/14603 , H01L27/14601 , H01L27/14687
摘要： A method of producing a solid-state image sensing device comprising a photoelectric conversion layer, the method comprising: laminating a first epitaxial layer on a semiconductor substrate; forming a part of the photoelectric conversion layer in the first epitaxial layer; forming a second epitaxial layer by epitaxial growth on the first epitaxial layer; and forming the remaining part of the photoelectric conversion layer in the second epitaxial layer to connect the remaining part of the photoelectric conversion layer to the part of the photoelectric conversion layer in the first epitaxial layer.
摘要翻译：一种制造包括光电转换层的固态图像感测装置的方法，所述方法包括：在半导体衬底上层叠第一外延层; 在所述第一外延层中形成所述光电转换层的一部分; 通过外延生长在所述第一外延层上形成第二外延层; 以及在所述第二外延层中形成所述光电转换层的剩余部分，以将所述光电转换层的剩余部分连接到所述第一外延层中的所述光电转换层的所述部分。

7. 发明授权

US07064405B2 Solid state imaging device with inner lens and manufacture thereof 失效
标题翻译：具有内透镜及其制造的固态成像装置
公开(公告)号：US07064405B2
公开(公告)日：2006-06-20
申请号：US10823660
申请日：2004-04-14
申请人： Ryuji Kondo , Shinji Uya , Yuko Nomura
发明人： Ryuji Kondo , Shinji Uya , Yuko Nomura
IPC分类号： H01L31/0232
CPC分类号： H01L27/14618 , H01L27/14627 , H01L27/14806 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure is formed which has photosensors, vertical CCDs, a horizontal CCD and a light shielding film. A first insulating layer made of additive-containing silicon oxide is formed on the semiconductor structure. It is reflowed and upward and downward convex inner lenses are formed on the reflowed first insulating layer and above the photosensors. A second insulating layer is formed which covers the inner lenses and is made of silicon oxide based insulator. It is planarized. Color filters are formed on the planarized surface of the second insulating layer. A transparent flat layer made of transparent material is formed covering the color filters. Micro lenses are formed on the transparent flat layer. A low refractive index layer having a refractive index lower than the micro lenses is formed covering the micro lenses. A transparent plate is disposed on it. The semiconductor structure disposed with the transparent plate is packaged.
摘要翻译：形成具有光电传感器，垂直CCD，水平CCD和遮光膜的半导体结构。在半导体结构上形成由含添加剂的氧化硅构成的第一绝缘层。在回流的第一绝缘层和光电传感器的上方形成向上和向下凸的内透镜。形成覆盖内透镜并由氧化硅基绝缘体制成的第二绝缘层。平面化滤色器形成在第二绝缘层的平坦化表面上。形成由透明材料制成的透明平坦层，覆盖滤色器。微透镜形成在透明平坦层上。覆盖微透镜的是形成折射率低于微透镜的低折射率层。在其上设置透明板。封装有透明板的半导体结构。

8. 发明申请

US20090115820A1 Inkjet recording apparatus 有权
标题翻译：喷墨记录装置
公开(公告)号：US20090115820A1
公开(公告)日：2009-05-07
申请号：US11902445
申请日：2007-09-21
申请人： Yuko Nomura , Isao Amemiya , Kazuhiko Higuchi , Kenichi Mori
发明人： Yuko Nomura , Isao Amemiya , Kazuhiko Higuchi , Kenichi Mori
IPC分类号： B41J2/045
CPC分类号： B41J2/14008
摘要： An inkjet recording apparatus includes: an ink holding chamber having a through hole to jet ink, and holding the ink; and a head unit jetting the ink held in the ink holding chamber from the through hole. The head unit includes an ultrasonic wave generation member, an ultrasonic wave focusing member focusing the ultrasonic waves generated at the ultrasonic wave generation member in a vicinity of the through hole, an ultrasonic wave propagation portion propagateting the ultrasonic waves leaving the ultrasonic wave focusing member, and a container portion containing the ultrasonic wave generation member, the ultrasonic wave focusing member, and the ultrasonic wave propagation portion.
摘要翻译：一种喷墨记录装置，包括：具有用于喷射墨水的通孔并保持墨水的墨水容纳室; 以及头单元，其从所述通孔喷射保持在所述墨水容纳室中的墨。头单元包括超声波产生部件，将超声波产生部件中产生的超声波聚焦在通孔附近的超声波聚焦部件，传播离开超声波聚焦部件的超声波的超声波传播部，以及包含超声波发生部件，超声波聚焦部件和超声波传播部的容器部。

9. 发明申请

US20060033830A1 Solid-state imaging device and its driving method for preventing damage in dynamic range 失效
公开(公告)号：US20060033830A1
公开(公告)日：2006-02-16
申请号：US11202066
申请日：2005-08-12
申请人： Katsumi Ikeda , Yuko Nomura , Makoto Kobayashi
发明人： Katsumi Ikeda , Yuko Nomura , Makoto Kobayashi
IPC分类号： H04N5/335
CPC分类号： H01L27/14843 , H04N5/3728
摘要： A solid-state imaging apparatus comprises a semiconductor substrate, a multiplicity of photo electric conversion elements, a vertical electric charge transfer device having a plurality of vertical electric charge transfer channels and transfer electrodes, reading out parts and a driving device that imposes a first voltage to the reading out electrode for reading out the accumulated signal electric charge from the photo electric conversion elements to the transfer channels in a reading out period and at a same time during the reading out period imposes a second voltage to at least one of the transfer electrodes adjoining to the reading out electrode for each photo electric conversion element for accumulating the signal electric charge in the vertical electric charge transfer channel under the one of the transfer electrode. Damage in the dynamic range of the solid-state imaging apparatus can be prevented.

10. 发明授权

US08419497B2 Light emitting device and method of manufacturing the same 失效
标题翻译：发光元件及其制造方法
公开(公告)号：US08419497B2
公开(公告)日：2013-04-16
申请号：US12923949
申请日：2010-10-15
申请人： Isao Takasu , Yuko Nomura , Tsuyoshi Hioki , Isao Amemiya , Kazuhide Abe
发明人： Isao Takasu , Yuko Nomura , Tsuyoshi Hioki , Isao Amemiya , Kazuhide Abe
IPC分类号： H01J9/00
CPC分类号： H01L33/54 , H01L33/46 , H01L33/507 , H01L2224/45144 , H01L2224/48091 , H01L2933/0041 , H01L2924/00014 , H01L2924/00
摘要： A method of manufacturing a light emitting device. The method includes: mounting a light emitting chip on a substrate; forming a transparent resin portion and a phosphor layer by using a liquid droplet discharging apparatus, the transparent resin portion being formed in a shape of a dome and covering the light emitting chip to fill an exterior thereof on the substrate, a phosphor layer containing phosphor and being formed on an exterior of the transparent resin portion close to at least a top side thereof; and forming a reflecting layer at a position exterior of the transparent resin portion and the phosphor layer close to the substrate.
摘要翻译：一种制造发光器件的方法。该方法包括：将发光芯片安装在基板上; 通过使用液滴喷射装置形成透明树脂部分和荧光体层，所述透明树脂部分形成为圆顶形状并且覆盖所述发光芯片以将其外部填充在所述基板上，所述荧光体层包含磷光体和形成在透明树脂部分的至少其顶侧附近的外部; 并且在透明树脂部分的外部和靠近基板的荧光体层的位置处形成反射层。

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