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1. 发明授权

US07416942B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07416942B2
公开(公告)日：2008-08-26
申请号：US11708532
申请日：2007-02-21
申请人： Yukiteru Matsui , Shinichi Hirasawa , Atsushi Shigeta , Kiyotaka Miyano , Takeshi Nishioka , Hiroyuki Yano
发明人： Yukiteru Matsui , Shinichi Hirasawa , Atsushi Shigeta , Kiyotaka Miyano , Takeshi Nishioka , Hiroyuki Yano
IPC分类号： H01L21/336 , H01L21/8238 , H01L21/461
CPC分类号： H01L27/11543 , C09G1/02 , H01L21/3212 , H01L21/7684 , H01L27/11526
摘要： A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.
摘要翻译：提供一种制造半导体器件的方法。该方法包括通过栅极绝缘膜在半导体衬底上连续地形成第一硅膜和掩模膜，在第一硅膜和掩模膜中形成多个沟槽到达半导体衬底的深度，填充多个的沟槽，去除掩模膜以暴露存在于氧化硅膜之间的第一硅膜，选择性地生长第一硅膜上的第二硅膜，使用表现出pH为 13以下，含有磨粒和阳离子性表面活性剂，从而得到包含第一和第二硅膜的浮栅电极膜，在整个表面上形成电极间绝缘膜，并在电极间绝缘膜上形成控制栅极电极膜。

2. 发明申请

US20070111433A1 Methods for manufacturing semiconductor devices 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20070111433A1
公开(公告)日：2007-05-17
申请号：US11594726
申请日：2006-11-09
申请人： Shinichi Hirasawa , Atsushi Shigeta , Kiyotaka Miyano , Yukiteru Matsui , Takeshi Nishioka , Hiroyuki Yano
发明人： Shinichi Hirasawa , Atsushi Shigeta , Kiyotaka Miyano , Yukiteru Matsui , Takeshi Nishioka , Hiroyuki Yano
IPC分类号： H01L21/8242
CPC分类号： H01L27/105 , H01L27/11526 , H01L27/11543 , H01L29/40114 , H01L29/66825
摘要： A method for manufacturing a semiconductor device comprises forming a first silicon layer above a semiconductor substrate; forming a stopper layer on said first silicon layer; partially removing said stopper layer and said first silicon layer above said semiconductor substrate to form a plurality of trenches; forming an insulating layer on said stopper layer with inside of said trenches; partially removing said insulating layer to expose said stopper layer; after partially removing said insulating layer, removing said stopper layer to expose said first silicon layer; selectively growing second silicon layer on said exposed first silicon layer; nonselectively growing a third silicon layer on said second silicon layer; and polishing at least a surface of said third silicon layer by performing chemical mechanical polishing.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底上形成第一硅层; 在所述第一硅层上形成阻挡层; 部分地去除所述半导体衬底之上的所述阻挡层和所述第一硅层以形成多个沟槽; 在所述沟槽的内部在所述阻挡层上形成绝缘层; 部分地去除所述绝缘层以暴露所述阻挡层; 在部分地去除所述绝缘层之后，去除所述阻挡层以露出所述第一硅层; 在所述暴露的第一硅层上选择性地生长第二硅层; 在所述第二硅层上非选择地生长第三硅层; 以及通过进行化学机械抛光来抛光所述第三硅层的至少一个表面。

3. 发明申请

US20070224760A1 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20070224760A1
公开(公告)日：2007-09-27
申请号：US11708532
申请日：2007-02-21
申请人： Yukiteru Matsui , Shinichi Hirasawa , Atsushi Shigeta , Kiyotaka Miyano , Takeshi Nishioka , Hiroyuki Yano
发明人： Yukiteru Matsui , Shinichi Hirasawa , Atsushi Shigeta , Kiyotaka Miyano , Takeshi Nishioka , Hiroyuki Yano
IPC分类号： H01L21/336
CPC分类号： H01L27/11543 , C09G1/02 , H01L21/3212 , H01L21/7684 , H01L27/11526
摘要： A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.
摘要翻译：提供一种制造半导体器件的方法。该方法包括通过栅极绝缘膜在半导体衬底上连续地形成第一硅膜和掩模膜，在第一硅膜和掩模膜中形成多个沟槽到达半导体衬底的深度，填充多个的沟槽，去除掩模膜以暴露存在于氧化硅膜之间的第一硅膜，选择性地生长第一硅膜上的第二硅膜，使用表现出pH为 13以下，含有磨粒和阳离子性表面活性剂，从而得到包含第一和第二硅膜的浮栅电极膜，在整个表面上形成电极间绝缘膜，并在电极间绝缘膜上形成控制栅极电极膜。

4. 发明申请

US20090239373A1 CHEMICAL MECHANICAL POLISHING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：化学机械抛光方法及制造半导体器件的方法
公开(公告)号：US20090239373A1
公开(公告)日：2009-09-24
申请号：US12477332
申请日：2009-06-03
申请人： Hirotaka Shida , Yukiteru Matsui , Atsushi Shigeta , Shinichi Hirasawa , Hirokazu Kato , Masako Kinoshita , Takeshi Nishioka , Hiroyuki Yano
发明人： Hirotaka Shida , Yukiteru Matsui , Atsushi Shigeta , Shinichi Hirasawa , Hirokazu Kato , Masako Kinoshita , Takeshi Nishioka , Hiroyuki Yano
IPC分类号： H01L21/768 , H01L21/306
CPC分类号： H01L21/7681 , C09G1/02 , H01L21/31058 , H01L21/31144 , H01L21/76835
摘要： A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.
摘要翻译：化学机械抛光方法包括使用包含具有表面官能团的聚合物颗粒和水溶性聚合物的浆料来抛光有机膜。

5. 发明授权

US08119517B2 Chemical mechanical polishing method and method of manufacturing semiconductor device 有权
标题翻译：化学机械抛光方法及制造半导体器件的方法
公开(公告)号：US08119517B2
公开(公告)日：2012-02-21
申请号：US12477332
申请日：2009-06-03
申请人： Hirotaka Shida , Yukiteru Matsui , Atsushi Shigeta , Shinichi Hirasawa , Hirokazu Kato , Masako Kinoshita , Takeshi Nishioka , Hiroyuki Yano
发明人： Hirotaka Shida , Yukiteru Matsui , Atsushi Shigeta , Shinichi Hirasawa , Hirokazu Kato , Masako Kinoshita , Takeshi Nishioka , Hiroyuki Yano
IPC分类号： H01L21/4763 , H01L21/461
CPC分类号： H01L21/7681 , C09G1/02 , H01L21/31058 , H01L21/31144 , H01L21/76835
摘要： A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.
摘要翻译：化学机械抛光方法包括使用包含具有表面官能团的聚合物颗粒和水溶性聚合物的浆料来抛光有机膜。

6. 发明申请

US20090156000A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20090156000A1
公开(公告)日：2009-06-18
申请号：US12332802
申请日：2008-12-11
申请人： Yukiteru MATSUI , Atsushi Shigeta , Yoshikuni Tateyama , Takeshi Nishioka , Hiroyuki Yano
发明人： Yukiteru MATSUI , Atsushi Shigeta , Yoshikuni Tateyama , Takeshi Nishioka , Hiroyuki Yano
IPC分类号： H01L21/283
CPC分类号： H01L21/02118 , C09G1/02 , H01L21/022 , H01L21/02282 , H01L21/31058 , H01L21/31144 , H01L21/312 , H01L21/76811 , H01L21/76813 , H01L21/76835
摘要： A method for manufacturing a semiconductor device is provided, which includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a first slurry containing first resin particles and a water-soluble polymer to planarize a surface of the organic film precursor, and polishing the organic film precursor where the surface is planarized using a second slurry containing second resin particles and a water-soluble polymer to leave the organic film precursor in the recess, thereby exposing the insulating film, an average particle diameter of the second resin particles being smaller than that of the first resin particles.
摘要翻译：提供了一种制造半导体器件的方法，其包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂膜，在第一温度下烘烤该涂膜不能实现有机成分的交联以获得有机膜前体，使用含有第一树脂粒子和水溶性聚合物的第一浆料对有机膜前体进行研磨，使有机膜前体的表面平坦化，膜前体，其中使用含有第二树脂颗粒和水溶性聚合物的第二浆料将表面平坦化，以使凹陷中的有机膜前体离开，从而暴露绝缘膜，第二树脂颗粒的平均粒径小于的第一树脂颗粒。

7. 发明授权

US07985685B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07985685B2
公开(公告)日：2011-07-26
申请号：US12262439
申请日：2008-10-31
申请人： Yukiteru Matsui , Masako Kinoshita , Seiro Miyoshi , Yoshikuni Tateyama , Takeshi Nishioka , Hiroyuki Yano
发明人： Yukiteru Matsui , Masako Kinoshita , Seiro Miyoshi , Yoshikuni Tateyama , Takeshi Nishioka , Hiroyuki Yano
IPC分类号： H01L21/311
CPC分类号： H01L21/02118 , C09G1/02 , H01L21/022 , H01L21/02282 , H01L21/31058 , H01L21/31144 , H01L21/312 , H01L21/76808 , H01L21/76811 , H01L21/76835
摘要： A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.
摘要翻译：提供了一种制造半导体器件的方法，该方法包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂覆膜，在第一温度下烘烤该涂膜其不能实现有机成分的交联以获得有机膜前体，使用含有树脂颗粒的浆料将有机膜前体抛光以在凹槽中离开有机膜前体，在第二温度下烘烤左有机膜前体高于第一温度以除去溶剂以获得嵌入在凹部中的第一有机膜，在绝缘膜上形成第二有机膜，从而获得下面的膜，在基底膜上连续形成中间层和抗蚀剂膜并对抗蚀剂膜进行图案曝光。

8. 发明申请

US20080227297A1 CHEMICAL MECHANICAL POLISHING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：化学机械抛光方法及制造半导体器件的方法
公开(公告)号：US20080227297A1
公开(公告)日：2008-09-18
申请号：US12038877
申请日：2008-02-28
申请人： Yukiteru MATSUI , Gaku Minamihaba , Takeshi Nishioka , Hiroyuki Yano
发明人： Yukiteru MATSUI , Gaku Minamihaba , Takeshi Nishioka , Hiroyuki Yano
IPC分类号： H01L21/304 , B24B29/02
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , H01L21/31053 , H01L21/31058
摘要： A chemically mechanically polishing method is provided, which includes slide-contacting a polishing film with a polishing pad while feeding a first chemical liquid and a second chemical liquid to the polishing pad. The first chemical liquid contains an electrolyte and bubbles having a diameter ranging from 10 nm to 1000 μm, and the second chemical liquid contains abrasive particles.
摘要翻译：提供了一种化学机械抛光方法，其包括将抛光膜与抛光垫滑动接触，同时向抛光垫供给第一化学液体和第二化学液体。第一化学液体含有直径为10nm〜1000μm的电解质和气泡，第二化学液含有磨粒。

9. 发明申请

US20090124076A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090124076A1
公开(公告)日：2009-05-14
申请号：US12262439
申请日：2008-10-31
申请人： Yukiteru Matsui , Masako Kinoshita , Seiro Miyoshi , Yoshikuni Tateyama , Takeshi Nishioka , Hiroyuki Yano
发明人： Yukiteru Matsui , Masako Kinoshita , Seiro Miyoshi , Yoshikuni Tateyama , Takeshi Nishioka , Hiroyuki Yano
IPC分类号： H01L21/4763
CPC分类号： H01L21/02118 , C09G1/02 , H01L21/022 , H01L21/02282 , H01L21/31058 , H01L21/31144 , H01L21/312 , H01L21/76808 , H01L21/76811 , H01L21/76835
摘要： A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.
摘要翻译：提供了一种制造半导体器件的方法，该方法包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂覆膜，在第一温度下烘烤该涂膜其不能实现有机成分的交联以获得有机膜前体，使用含有树脂颗粒的浆料将有机膜前体抛光以在凹槽中离开有机膜前体，在第二温度下烘烤左有机膜前体高于第一温度以除去溶剂以获得嵌入在凹部中的第一有机膜，在绝缘膜上形成第二有机膜，从而获得下面的膜，在基底膜上连续形成中间层和抗蚀剂膜并对抗蚀剂膜进行图案曝光。

10. 发明申请

US20110081832A1 POLISHING DEVICE AND POLISHING METHOD 审中-公开
标题翻译：抛光装置和抛光方法
公开(公告)号：US20110081832A1
公开(公告)日：2011-04-07
申请号：US12794472
申请日：2010-06-04
申请人： Kenro Nakamura , Yukiteru Matsui , Takeshi Nishioka
发明人： Kenro Nakamura , Yukiteru Matsui , Takeshi Nishioka
IPC分类号： B24B1/00 , B24B7/04
CPC分类号： B24B37/10 , B24B55/02 , B24B57/02
摘要： In one embodiment, a polishing device includes: a rotatable turntable, a holding unit, a separation wall, a slurry supply tube, and a cooling medium supply tube. On an upper surface of the rotatable turntable, a polishing pad is attached. The holding unit rotatably holds an object to be polished and disposes a polished surface of the object to be polished in a manner to face the polishing pad. The separation wall abuts on the upper surface of the polishing pad and sections the polishing pad into a polished region in which the holding unit is provided and an unpolished region in which the holding unit is not provided. The slurry supply tube supplies a slurry to the upper surface of the polishing pad in a polished region side. The cooling medium supply tube supplies a cooling medium to the upper surface of the polishing pad in the unpolished region.
摘要翻译：在一个实施例中，抛光装置包括：可旋转转台，保持单元，分隔壁，浆料供应管和冷却介质供应管。在可旋转转盘的上表面上安装有抛光垫。保持单元可旋转地保持要抛光的物体，并以与抛光垫相对的方式配置被抛光物体的抛光表面。分隔壁抵接在抛光垫的上表面上，并将抛光垫分成抛光区域，在其中设置保持单元和未设置保持单元的未抛光区域。浆料供给管在抛光区域侧向抛光垫的上表面供给浆料。冷却介质供给管将未冷却区域的冷却介质供给到抛光垫的上表面。

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