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1. 发明授权

US5058062A Nonvolatile semiconductor memory circuit including a reliable sense amplifier 失效
标题翻译：非易失性半导体存储器电路，包括可靠的感测放大器
公开(公告)号：US5058062A
公开(公告)日：1991-10-15
申请号：US431845
申请日：1989-11-06
申请人： Yukio Wada , Tadashi Maruyama , Toshimasa Nakamura
发明人： Yukio Wada , Tadashi Maruyama , Toshimasa Nakamura
IPC分类号： G11C17/00 , G11C7/06 , G11C16/06 , G11C16/28
CPC分类号： G11C16/28 , G11C7/065
摘要： A nonvolatile memory device has a memory cell having its gate connected to a word line, its source connected to a ground potential and its drain connected to a power supply voltage via a bit line and a dummy cell having its gate connected to the word line, its source connected to the source potential and its drain connected to the power supply voltage via a dummy bit line. The bit line and the dummy bit line are connected to reset and set terminals of a sense amplifier circuit comprising a flip-flop circuit and a latch type of sense amplifier. The conductance of the dummy cell is made smaller than that of the memory cell so that the speed at which the potential on the bit line is lowered depends on the state of injection of electrons into the memory cell as compared with the speed at which the potential on the dummy bit line at a time of reading data. The flip-flop circuit is reset or set in accordance with the speed at which the potential on the bit line is lowered and then the latch type of sense amplifier operates to latch the output of the flip-flop circuit and output it as read data.

2. 发明授权

US5058063A Nonvolatile semiconductor memory device incorporating level shifting circuits 失效
标题翻译：非线性半导体存储器件并入电平放大电路
公开(公告)号：US5058063A
公开(公告)日：1991-10-15
申请号：US454740
申请日：1989-12-21
申请人： Yukio Wada , Tadashi Maruyama , Yasoji Suzuki
发明人： Yukio Wada , Tadashi Maruyama , Yasoji Suzuki
IPC分类号： G11C17/00 , G11C16/04 , G11C16/06 , G11C16/10 , G11C16/14
CPC分类号： G11C16/10 , G11C16/0433 , G11C16/14
摘要： In a nonvolatile semiconductor memory system comprising a memory chip and a batttery for driving the memory chip, the memory chip includes a memory-cell matrix, a row decoder, a first level-shifting circuit for shifting the level of the output of the row decoder, a column-selecting circuit, a column decoder, a second level-shifting circuit for shifting the level of the output of the column decoder, a sense amplifier, a third level-shifting circuit for shifting the level of the data which is to be written into the memory-cell matrix, a voltage-booster circuit, a timer circuit, and an oscillator circuit. The nonvolatile semiconductor memory system operates stably when driven by a low voltage or by a voltage over a broad range.

3. 发明授权

US4870615A Nonvolatile floating gate semiconductor memory device 失效
标题翻译：非易失性浮栅半导体存储器件
公开(公告)号：US4870615A
公开(公告)日：1989-09-26
申请号：US150290
申请日：1988-01-29
申请人： Tadashi Maruyama , Yukio Wada , Tomohisa Shigematsu , Yasoji Suzuki , Makoto Yoshizawa
发明人： Tadashi Maruyama , Yukio Wada , Tomohisa Shigematsu , Yasoji Suzuki , Makoto Yoshizawa
IPC分类号： G11C17/00 , G11C16/04 , H01L27/115
CPC分类号： H01L27/115 , G11C16/0433
摘要： A nonvolatile semiconductor memory device comprises a cell transistor formed of a floating gate type MOS transistor, for storing an electric charge, whose gate is connected to a control gate line layer, a first selecting transistor formed of an MOS transistor, whose gate is connected to a read gate line layer, whose source-drain path is connected at one end to a read line layer, and at the other end to one terminal of the source-drain path of the cell transistor, and a second selecting transistor formed of an MOS transistor, whose gate is connected to a write gate line layer, whose source-drain path is connected at one end to a write line layer, and at the other end to the other terminal of the source-drain path of a cell transistor. A power source voltage of 5 V can be supplied to the read line layer in the read mode.

4. 发明授权

US4970409A Voltage multiplier for nonvolatile semiconductor memory 失效
标题翻译：非易失性半导体存储器的电压倍增器
公开(公告)号：US4970409A
公开(公告)日：1990-11-13
申请号：US332325
申请日：1989-04-03
申请人： Yukio Wada , Tadashi Maruyama
发明人： Yukio Wada , Tadashi Maruyama
IPC分类号： G11C17/00 , G11C5/14 , G11C16/06 , H01L21/822 , H01L21/8247 , H01L27/04 , H01L29/788 , H01L29/792 , H02M3/07 , H03K17/06 , H03K19/017
CPC分类号： G11C5/145 , H03K17/063 , H03K19/01742
摘要： A voltage multiplier for a use in a non-volatile semiconductor memory and operated at a low operation voltage with a reduced area comprising a plurality of cascade-connected basic circuits.
摘要翻译：一种在非易失性半导体存储器中使用的电压倍增器，并且在具有包括多个级联连接的基本电路的减小区域的低工作电压下操作。

5. 发明授权

US4912749A Nonvolatile semiconductor memory 失效
标题翻译：非易失性半导体存储器
公开(公告)号：US4912749A
公开(公告)日：1990-03-27
申请号：US149606
申请日：1988-01-28
申请人： Tadashi Maruyama , Yukio Wada , Tomohisa Shigematsu , Yasoji Suzuki , Makoto Yoshizawa
发明人： Tadashi Maruyama , Yukio Wada , Tomohisa Shigematsu , Yasoji Suzuki , Makoto Yoshizawa
IPC分类号： G11C17/00 , B42D15/02 , B42D15/10 , G03H1/02 , G11C16/04 , G11C16/06 , G11C16/10 , G11C16/26 , G11C11/34
CPC分类号： G11C16/26 , G11C16/0433 , G11C16/10
摘要： In a nonvolatile semiconductor memory according to the invention, a power source voltage of 5 V used in an ordinary read mode is applied to a read line in the data read mode without changing its value. If a write line, a selection gate line, a control gate line, and a read line are respectively set at 0 V, 5 V, 0 V, and 5 V in the data read mode, the potential at an n-type diffusion layer becomes 0 V. In this case, the potential at the control gate line is 0 V, and the potential at a floating gate electrode becomes substantially 0 V. That is, an electric field is not applied to a thin insulating film located between the floating gate electrode and the n-type diffusion layer. As a result, electron injection and discharge due to the tunnel effect do not occur.

6. 发明授权

US06242391B1 Water-soluble cutting fluid 失效
标题翻译：水溶性切削液
公开(公告)号：US06242391B1
公开(公告)日：2001-06-05
申请号：US09486211
申请日：2000-02-18
申请人： Yasuo Fukutani , Eiichiro Nakayama , Yukio Wada , Shunji Suzuki
发明人： Yasuo Fukutani , Eiichiro Nakayama , Yukio Wada , Shunji Suzuki
IPC分类号： C10M17302
CPC分类号： C10M173/00 , C10M125/10 , C10M125/18 , C10M2201/02 , C10M2201/062 , C10M2201/08 , C10M2201/081 , C10M2201/082 , C10M2201/084 , C10N2210/01 , C10N2240/401 , C10N2250/02
摘要： A water-soluble cutting fluid which is characterized by excellent cooling and lubricating properties and does not exert a harmful influence on the environment. A solution containing hydrogencarbonate ion, bromide ion, carbonic acid ion, and, if necessary, fluoride ion, and being adjusted to a pH of 7.0 to 11.5 can be used as a substitute for a cutting oil. A water-soluble cutting fluid further including additives such as rust-preventive agents and the like can be also used as a substitute for conventional cutting oil.
摘要翻译：一种水溶性切削液，其特征在于优异的冷却和润滑性能，并且不会对环境产生有害影响。可以使用含有碳酸氢根离子，溴离子，碳酸离子和必要时的氟离子并调节至7.0〜11.5的pH的溶液来代替切削油。还可以使用进一步包含添加剂如防锈剂等的水溶性切削液作为常规切削油的替代物。

7. 发明授权

US5500192A Method of separating neptunium and plutonium 失效
标题翻译：分离ium和钚的方法
公开(公告)号：US5500192A
公开(公告)日：1996-03-19
申请号：US304175
申请日：1994-09-12
申请人： Yukio Wada , Kyoichi Morimoto , Takayuki Goibuchi , Hiroshi Tomiyasu
发明人： Yukio Wada , Kyoichi Morimoto , Takayuki Goibuchi , Hiroshi Tomiyasu
IPC分类号： G21F9/06 , B01D11/04 , C01G56/00 , C22B60/02 , C22B60/04
CPC分类号： C22B60/0295 , C01G56/001 , C22B60/04
摘要： In a method of separating neptunium and plutonium, a nitric acid solution containing a mixture of neptunium and plutonium is oxidized by irradiation of ultraviolet light in the presence of a reducing agent. As a result, different valences of neptunium are adjusted all into the valence 5, which can remain in water, and in the meantime, valences of plutonium are adjusted into the valence 4 or 6, which can be extracted in the organic phase. It is therefore possible to separate neptunium and plutonium from each other without difficulty.
摘要翻译：在分离ium和钚的方法中，在还原剂的存在下，通过紫外线的照射将含有ium和钚的混合物的硝酸溶液氧化。结果，将ium的不同价态全部调整为能保留在水中的化合价5，同时将钚的价态调节为可在有机相中提取的价态4或6。因此，可以将钚和钚彼此分开而没有困难。

8. 发明授权

US5093302A Radioactive catalyst and oxidation-reduction method and apparatus using same 失效
标题翻译：放射性催化剂和氧化还原方法和使用它的装置
公开(公告)号：US5093302A
公开(公告)日：1992-03-03
申请号：US631998
申请日：1990-12-21
申请人： Nobuyuki Sasao , Yukio Wada
发明人： Nobuyuki Sasao , Yukio Wada
IPC分类号： C01B3/08 , B01J19/12 , B01J23/40 , B01J23/46 , B01J35/00 , B01J35/02 , C01B3/04 , C01B13/02 , G21H5/00
CPC分类号： C01B3/042 , B01J23/40 , B01J35/00 , Y02E60/364 , Y02P20/134
摘要： A radioactive catalyst is disclosed which comprises a fine particle of semiconductor and a high radioactive platinum group element deposited on the particle of semiconductor. The radioactive catalyst serves as a source of radiation and also as a catalyst for oxidation-reduction reaction. By bringing the radioactive catalyst into contact with water, the water is decomposed by the oxidation-reduction reaction to produce hydrogen and oxygen.
摘要翻译：公开了一种放射性催化剂，其包含沉积在半导体颗粒上的半导体微粒和高放射性铂族元素。放射性催化剂用作辐射源，也用作氧化还原反应的催化剂。通过使放射性催化剂与水接触，水被氧化还原反应分解，产生氢和氧。

9. 发明授权

US4040696A Electric device having rotary current collecting means 失效
标题翻译：具有旋转集电装置的电气装置
公开(公告)号：US4040696A
公开(公告)日：1977-08-09
申请号：US679661
申请日：1976-04-23
申请人： Yukio Wada , Yoshinori Abura , Takeshi Matsui
发明人： Yukio Wada , Yoshinori Abura , Takeshi Matsui
IPC分类号： H01R35/04 , H01R39/64 , H01R39/00
CPC分类号： H01R39/64
摘要： An electric device having rotary type current collecting means through electric source cord which is made freely rotatable with respect to variations in using position of the device for preventing any twist of the cord. The means comprises an integral block of a first carrier of current feeding conductor connected to the cord and a second carrier of current collecting conductor slidably contacting with the current feeding conductor of the first carrier for current collection from the cord to the electric device, the first and second carriers are rotatably coupled to each other and the integral block is assembled in the device body so as to stationarily hold the second carrier while the first carrier and cord are rotatably held with respect to the second carrier and device body.
摘要翻译：一种电动装置，具有通过电源线的旋转式集电装置，该电源线相对于用于防止电线扭曲的装置的使用位置的变化而可自由旋转。所述装置包括与所述绳索连接的馈电导体的第一载体的整体块和与所述第一载体的所述电流馈送导体滑动接触的集电导体的第二载体，用于从所述线到所述电装置的电流收集，所述第一载体并且第二托架彼此可旋转地联接，并且所述整体块组装在所述装置主体中，以便当所述第一托架和绳索相对于所述第二托架和装置主体被可旋转地保持时，固定地保持所述第二托架。

10. 发明授权

US07141102B2 Antifreeze solution and rust inhibitor added thereto 失效
标题翻译：加入防冻液和防锈剂
公开(公告)号：US07141102B2
公开(公告)日：2006-11-28
申请号：US10543845
申请日：2004-01-29
申请人： Yasuo Fukutani , Etsushi Tanaka , Yukio Wada
发明人： Yasuo Fukutani , Etsushi Tanaka , Yukio Wada
IPC分类号： C23F11/12 , C09K5/20 , C09K3/00 , C09K3/18
CPC分类号： C09K5/20 , C09K3/18 , C23F11/08
摘要： An object of the present invention is to provide an antifreeze solution which is used by adding it to a heating medium of a heat exchanger or a radiator coolant for an internal combustion car engine, which can be used to prevent the icing of road surfaces, which is easy to use and environmentally friendly, and which does not contain environmentally harmful substances such as ethylene glycol so that it can be easily treated for disposal after use. Another object of the present invention is to provide an antifreeze solution which contains water as a main component and glycerin. The undiluted antifreeze solution does not freeze even at −20° C. or less at normal pressures and is composed of components at a certain ratio.
摘要翻译：本发明的目的是提供一种防冻溶液，其通过将其添加到用于内燃车用发动机的热交换器或散热器冷却剂的加热介质中使用，其可用于防止路面结冰，其中使用方便，环保，不含有乙二醇等环境有害物质，使用后可以容易地处理。本发明的另一个目的是提供以水为主要成分的防冻溶液和甘油。未稀释的防冻溶液即使在常压下也不会在-20℃或更低温度下冷冻，并以一定的比例由组分组成。

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