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1. 发明授权

US08153033B2 Amorphous transparent conductive film, target and production method for amorphous conductive film 有权
标题翻译：无定形透明导电膜，非晶导电膜靶材及其制备方法
公开(公告)号：US08153033B2
公开(公告)日：2012-04-10
申请号：US11908037
申请日：2006-03-07
申请人： Yukio Shimane , Kazuyoshi Inoue , Masato Matsubara , Nobuo Tanaka , Tokie Tanaka, legal representative , Shigekazu Tomai , Koki Yano , Shigeo Matsuzaki
发明人： Yukio Shimane , Kazuyoshi Inoue , Masato Matsubara , Nobuo Tanaka , Shigekazu Tomai , Koki Yano , Shigeo Matsuzaki
IPC分类号： H01B1/08 , C09D1/00
CPC分类号： C23C16/407 , C23C14/3414 , C23C16/40
摘要： An amorphous transparent conductive film containing as a main component a six oxygen-coordinated metal oxide, and satisfying, in a radial distribution function (RDF) obtained by an X-ray scattering measurement, a relationship of A/B>1, providing that the maximum value of RDF at an interatomic distance of from 0.30 nm to 0.36 nm is A and the maximum value of RDF at an interatomic distance of from 0.36 nm to 0.42 nm is B.
摘要翻译：一种非晶透明导电膜，其以六氧化配位金属氧化物为主要成分，并且通过X射线散射测定获得的径向分布函数（RDF）满足A / B> 1的关系，条件是在原子间距离为0.30nm至0.36nm处的RDF的最大值为A，原子间距离为0.36nm至0.42nm处的RDF的最大值为B.

2. 发明申请

US20090250668A1 AMORPHOUS TRANSPARENT CONDUCTIVE FILM, TARGET AND PRODUCTION METHOD FOR AMORPHOUS CONDUCTIVE FILM 有权
标题翻译：非晶透明导电膜，非晶导体膜的目标和生产方法
公开(公告)号：US20090250668A1
公开(公告)日：2009-10-08
申请号：US11908037
申请日：2006-03-07
申请人： Yukio Shimane , Kazuyoshi Inoue , Masato Matsubara , Nobuo Tanaka , Tokie Tanaka , Shigekazu Tomai , Koki Yano , Shigeo Matsuzaki
发明人： Yukio Shimane , Kazuyoshi Inoue , Masato Matsubara , Nobuo Tanaka , Tokie Tanaka , Shigekazu Tomai , Koki Yano , Shigeo Matsuzaki
IPC分类号： H01B1/08 , C23C14/34
CPC分类号： C23C16/407 , C23C14/3414 , C23C16/40
摘要： An amorphous transparent conductive film containing as a main component a six oxygen-coordinated metal oxide, and satisfying, in a radial distribution function (RDF) obtained by an X-ray scattering measurement, a relationship of A/B>1, providing that the maximum value of RDF at an interatomic distance of from 0.30 nm to 0.36 nm is A and the maximum value of RDF at an interatomic distance of from 0.36 nm to 0.42 nm is B.
摘要翻译：一种非晶透明导电膜，其以六氧化配位金属氧化物为主要成分，并且通过X射线散射测定获得的径向分布函数（RDF）满足A / B> 1的关系，条件是在原子间距离为0.30nm至0.36nm处的RDF的最大值为A，原子间距离为0.36nm至0.42nm处的RDF的最大值为B.

3. 发明授权

US07648657B2 In Sm oxide sputtering target 有权
标题翻译：在Sm氧化物溅射靶中
公开(公告)号：US07648657B2
公开(公告)日：2010-01-19
申请号：US11995640
申请日：2006-06-21
申请人： Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka, legal representative , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano
发明人： Kazuyoshi Inoue , Nobuo Tanaka , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano
IPC分类号： H01B1/08 , C23C14/08
CPC分类号： C23C14/3414 , C04B35/01 , C04B35/457 , C04B35/50 , C04B35/62655 , C04B35/6455 , C04B2235/3224 , C04B2235/3229 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/604 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C23C14/08
摘要： A sputtering target which is formed of a sintered body including an oxide main components of which are In and Sm. A sputtering target in which a sintered body of an oxide including In and Sm as main components is doped with at least one element with an atomic valency of positive tetravalency or higher in an amount of 20 at. % or less relative to the total sum of all cation elements.
摘要翻译：溅射靶，其由包含氧化物主要成分为In和Sm的烧结体形成。一种溅射靶，其中包含In和Sm作为主要成分的氧化物的烧结体掺杂有至少一种元素，其中原子价为正四价或更高的20at。相对于所有阳离子元素的总和为％以下。

4. 发明申请

US20090121199A1 IN SM OXIDE SPUTTERING TARGET 有权
标题翻译：氧化硅溅射靶
公开(公告)号：US20090121199A1
公开(公告)日：2009-05-14
申请号：US11995640
申请日：2006-06-21
申请人： Kazuyoshi Inoue , Nobou Tanaka , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano , Tokie Tanaka
发明人： Kazuyoshi Inoue , Nobou Tanaka , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano , Tokie Tanaka
IPC分类号： H01B1/08 , B28B1/00 , B29C43/02 , C07F17/00
CPC分类号： C23C14/3414 , C04B35/01 , C04B35/457 , C04B35/50 , C04B35/62655 , C04B35/6455 , C04B2235/3224 , C04B2235/3229 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/604 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C23C14/08
摘要： A sputtering target which is formed of a sintered body including an oxide main components of which are In and Sm. A sputtering target in which a sintered body of an oxide including In and Sm as main components is doped with at least one element with an atomic valency of positive tetravalency or higher in an amount of 20 at. % or less relative to the total sum of all cation elements.
摘要翻译：溅射靶，其由包含氧化物主要成分为In和Sm的烧结体形成。一种溅射靶，其中包含In和Sm作为主要成分的氧化物的烧结体掺杂有至少一种元素，其中原子价为正四价或更高的20at。相对于所有阳离子元素的总和为％以下。

5. 发明申请

US20080239217A1 Semi-Transmissive/Semi-Reflective Electrode Substrate, Method for Manufacturing Same, and Liquid Crystal Display Using Such Semi-Transmissive/Semi-Reflective Electrode Substrate 失效
标题翻译：半透射/半反射电极基板，其制造方法和使用这种半透射/半反射电极基板的液晶显示器
公开(公告)号：US20080239217A1
公开(公告)日：2008-10-02
申请号：US10591529
申请日：2005-02-18
申请人： Kazuyoshi Inoue , Shigekazu Tomai , Masato Matsubara
发明人： Kazuyoshi Inoue , Shigekazu Tomai , Masato Matsubara
IPC分类号： G02F1/1343 , H01L23/48 , H01L21/28
CPC分类号： G02F1/13439 , G02F1/133555
摘要： Provided are a semi-transmitting and semi-reflecting electrode substrate provided with a transparent conductive layer which is almost free from the generation of residues caused by etching and is resistant to an etchant for a metal reflecting layer (metal layer), a method of producing the semi-transmitting and semi-reflecting electrode substrate and a liquid crystal display device using the semi-transmitting and semi-reflecting electrode substrate. Specifically, the invention relates a semi-transmitting and semi-reflecting electrode substrate comprising a transparent substrate, a transparent conductive layer which is disposed on the transparent substrate and contains indium oxide as its major component and further one or two or more oxides selected from tungsten oxide, molybdenum oxide and niobium oxide and a metal reflecting layer which is disposed on the transparent substrate, reflects extraneous light and is connected with the transparent conductive layer, to a method producing the semi-transmitting and semi-reflecting electrode substrate and to a liquid crystal display device using the semi-transmitting and semi-reflecting electrode substrate. This semi-transmitting and semi-reflecting electrode substrate is almost free from the generation of residues, has high processability and improves the yield.
摘要翻译：提供一种具有透明导电层的半透射半反射电极基板，其几乎不会产生由蚀刻引起的残留物，并且耐金属反射层（金属层）的蚀刻剂，制造方法半透射半反射电极基板和使用半透射半反射电极基板的液晶显示装置。具体地说，本发明涉及一种半透射半反射电极基板，其包括透明基板，透明导电层，其设置在透明基板上并且包含氧化铟作为其主要成分，还有一种或两种以上选自钨氧化物，氧化钼和铌氧化物以及设置在透明基板上的金属反射层，反射外部光并与透明导电层连接，制造半透射半反射电极基板和液体的方法使用半透射和半反射电极基板的晶体显示装置。这种半透射和半反射电极基质几乎没有残留物的产生，具有高加工性和提高产率。

6. 发明申请

US20110310322A1 THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE, PROCESSES FOR PRODUCING THE SAME, LIQUID CRYSTAL DISPLAY USING THE SAME, AND RELATED DEVICES AND PROCESSES; AND SPUTTERING TARGET, TRANSPARENT ELECTROCONDUCTIVE FILM FORMED BY USE OF THIS, TRANSPARENT ELECTRODE, AND RELATED DEVICES AND PROCESSES 有权
标题翻译：薄膜晶体管，薄膜晶体管基板，其制造方法，使用其的液晶显示器及相关装置和工艺; 和溅射目标，使用这种透明电极形成的透明电极膜，以及相关的器件和工艺
公开(公告)号：US20110310322A1
公开(公告)日：2011-12-22
申请号：US13219814
申请日：2011-08-29
申请人： Kazuyoshi INOUE , Shigekazu Tomai , Masato Matsubara
发明人： Kazuyoshi INOUE , Shigekazu Tomai , Masato Matsubara
IPC分类号： G02F1/136 , H01L33/08 , H01L21/283 , H01L29/786
CPC分类号： H01L29/78696 , C04B35/01 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3289 , C04B2235/5436 , C04B2235/5445 , C04B2235/77 , C23C14/08 , C23C14/3414 , G02F1/13439 , G02F1/136227 , G02F1/1368 , H01L23/53219 , H01L23/53247 , H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , H01L2924/00
摘要： Provided are a thin film transistor substrate having a transparent electroconductive film in which residues and so on resulting etching are hardly generated; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.A thin film transistor substrate, comprising a transparent substrate, a source electrode formed over the transparent substrate, a drain electrode formed over the transparent substrate, and a transparent pixel electrode formed over the transparent substrate, wherein the transparent pixel electrode is a transparent electroconductive film which is made mainly of indium oxide, and further comprises one or two or more oxides selected from tungsten oxide, molybdenum oxide, nickel oxide and niobium oxide, and the transparent pixel electrode is electrically connected to the source electrode or the drain electrode; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.
摘要翻译：提供了具有透明导电膜的薄膜晶体管基板，其中几乎不产生所得到的蚀刻残留物等; 其制造方法; 以及使用该薄膜晶体管基板的液晶显示器。一种薄膜晶体管基板，包括透明基板，形成在所述透明基板上的源电极，形成在所述透明基板上的漏电极和形成在所述透明基板上的透明像素电极，其中所述透明像素电极是透明导电膜其主要由氧化铟制成，并且还包含一种或两种以上选自氧化钨，氧化钼，氧化镍和氧化铌的氧化物，透明像素电极与源电极或漏电极电连接; 其制造方法; 以及使用该薄膜晶体管基板的液晶显示器。

7. 发明授权

US08773628B2 Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes 有权
标题翻译：薄膜晶体管，薄膜晶体管基板，其制造方法，使用其的液晶显示器及相关的装置和工艺; 和溅射靶，使用该透明电极形成的透明导电膜，以及相关的器件和工艺
公开(公告)号：US08773628B2
公开(公告)日：2014-07-08
申请号：US13219814
申请日：2011-08-29
申请人： Kazuyoshi Inoue , Shigekazu Tomai , Masato Matsubara
发明人： Kazuyoshi Inoue , Shigekazu Tomai , Masato Matsubara
IPC分类号： G02F1/1343
CPC分类号： H01L29/78696 , C04B35/01 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3289 , C04B2235/5436 , C04B2235/5445 , C04B2235/77 , C23C14/08 , C23C14/3414 , G02F1/13439 , G02F1/136227 , G02F1/1368 , H01L23/53219 , H01L23/53247 , H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , H01L2924/00
摘要： Provided are thin film transistor substrates, thin film transistor liquid crystal displays, thin film transistors, TFT substrates for liquid crystal displays, liquid crystal displays provided with TFT substrates and liquid crystals, pixel electrodes for driving a liquid crystals, and transparent electrodes, an processes for the preparation thereof.
摘要翻译：本发明提供薄膜晶体管基板，薄膜晶体管液晶显示器，薄膜晶体管，液晶显示器用TFT基板，TFT基板和液晶的液晶显示器，驱动液晶的像素电极和透明电极，用于制备。

8. 发明申请

US20070209928A1 Indium Oxide-Cerium Oxide Based Sputtering Target, Transparent Electroconductive Film, and Process for Producing a Transparent Electroconductive Film 失效
标题翻译：基于氧化铟 - 氧化铈的溅射靶，透明导电膜和用于生产透明导电膜的方法
公开(公告)号：US20070209928A1
公开(公告)日：2007-09-13
申请号：US10594756
申请日：2005-02-21
申请人： Kazuyoshi Inoue , Masato Matsubara , Shigekazu Tomai
发明人： Kazuyoshi Inoue , Masato Matsubara , Shigekazu Tomai
IPC分类号： C23C14/00
CPC分类号： C23C14/3414 , C04B35/01 , C04B2235/3229 , C04B2235/3286 , C04B2235/5445 , C04B2235/6585 , C04B2235/6586 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C23C14/086 , C23C14/5806
摘要： A transparent conductive film for constructing a transparent electrode that is free from the generation of residue, etc. by etching with a weak acid (for example, organic acid). Further, there is provided a sputtering target for producing the transparent conductive film. In particular, there is provided a sputtering target composed of indium oxide and cerium oxide, characterized in that in the observation of crystal peaks by X-ray diffractometry, the presence of peaks ascribed to indium oxide and cerium oxide is observed, and that in the EPMA measurement, the diameter of cerium oxide particles dispersed in indium oxide is measured as being ≦5 μm. A transparent conductive film is formed by a sputtering technique with the use of this sputtering target. This transparent conductive film is substantially free from the generation of residue, etc. by etching with a weak acid (for example, organic acid).
摘要翻译：用于通过用弱酸（例如有机酸）蚀刻来构建不产生残渣等的透明电极的透明导电膜。此外，提供了一种用于制造透明导电膜的溅射靶。特别地，提供了由氧化铟和氧化铈构成的溅射靶，其特征在于，在通过X射线衍射观察晶体峰时，观察到归属于氧化铟和氧化铈的峰的存在， EPMA测量中，测量分散在氧化铟中的氧化铈颗粒的直径为<=5μm。通过使用该溅射靶的溅射技术形成透明导电膜。该透明导电膜通过用弱酸（例如有机酸）蚀刻而基本上不产生残留物等。

9. 发明授权

US08529739B2 Indium oxide-cerium oxide based sputtering target, transparent electroconductive film, and process for producing a transparent electroconductive film 失效
标题翻译：氧化铟 - 氧化铈基溅射靶，透明导电膜，以及制造透明导电膜的方法
公开(公告)号：US08529739B2
公开(公告)日：2013-09-10
申请号：US10594756
申请日：2005-02-21
申请人： Kazuyoshi Inoue , Masato Matsubara , Shigekazu Tomai
发明人： Kazuyoshi Inoue , Masato Matsubara , Shigekazu Tomai
IPC分类号： C25B9/00 , C25B11/00 , C25B13/00 , C23C14/00 , B32B15/00 , B32B17/06 , B32B9/00 , B32B15/04 , B32B19/00
CPC分类号： C23C14/3414 , C04B35/01 , C04B2235/3229 , C04B2235/3286 , C04B2235/5445 , C04B2235/6585 , C04B2235/6586 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C23C14/086 , C23C14/5806
摘要： A transparent conductive film for constructing a transparent electrode that is free from the generation of residue, etc. by etching with a weak acid (for example, organic acid). Further, there is provided a sputtering target for producing the transparent conductive film. In particular, there is provided a sputtering target composed of indium oxide and cerium oxide, characterized in that in the observation of crystal peaks by X-ray diffractometry, the presence of peaks ascribed to indium oxide and cerium oxide is observed, and that in the EPMA measurement, the diameter of cerium oxide particles dispersed in indium oxide is measured as being ≦5 μm. A transparent conductive film is formed by a sputtering technique with the use of this sputtering target. This transparent conductive film is substantially free from the generation of residue, etc. by etching with a weak acid (for example, organic acid).
摘要翻译：用于通过用弱酸（例如有机酸）蚀刻来构建不产生残渣等的透明电极的透明导电膜。此外，提供了一种用于制造透明导电膜的溅射靶。特别地，提供了由氧化铟和氧化铈构成的溅射靶，其特征在于，在通过X射线衍射观察晶体峰时，观察到归属于氧化铟和氧化铈的峰的存在， EPMA测量中，分散在氧化铟中的氧化铈颗粒的直径测量为5μm。通过使用该溅射靶的溅射技术形成透明导电膜。该透明导电膜通过用弱酸（例如有机酸）蚀刻而基本上不产生残留物等。

10. 发明申请

US20070170434A1 Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this,transparent electrode, and related devices and processes 有权
标题翻译：薄膜晶体管，薄膜晶体管基板，其制造方法，使用其的液晶显示器及相关的装置和工艺; 和溅射靶，使用该透明电极形成的透明导电膜，以及相关的器件和工艺
公开(公告)号：US20070170434A1
公开(公告)日：2007-07-26
申请号：US10592280
申请日：2005-03-02
申请人： Kazuyoshi Inoue , Shigekazu Tomai , Masato Matsubara
发明人： Kazuyoshi Inoue , Shigekazu Tomai , Masato Matsubara
IPC分类号： H01L29/04
CPC分类号： H01L29/78696 , C04B35/01 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3289 , C04B2235/5436 , C04B2235/5445 , C04B2235/77 , C23C14/08 , C23C14/3414 , G02F1/13439 , G02F1/136227 , G02F1/1368 , H01L23/53219 , H01L23/53247 , H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , H01L2924/00
摘要： Provided are a thin film transistor substrate having a transparent electroconductive film in which residues and so on resulting etching are hardly generated; a process for producing the same; and a liquid crystal display using this thin film transistor substrate. A thin film transistor substrate, comprising a transparent substrate, a source electrode formed over the transparent substrate, a drain electrode formed over the transparent substrate, and a transparent pixel electrode formed over the transparent substrate, wherein the transparent pixel electrode is a transparent electroconductive film which is made mainly of indium oxide, and further comprises one or two or more oxides selected from tungsten oxide, molybdenum oxide, nickel oxide and niobium oxide, and the transparent pixel electrode is electrically connected to the source electrode or the drain electrode; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.
摘要翻译：提供了具有透明导电膜的薄膜晶体管基板，其中几乎不产生所得到的蚀刻残留物等; 其制造方法; 以及使用该薄膜晶体管基板的液晶显示器。一种薄膜晶体管基板，包括透明基板，形成在所述透明基板上的源电极，形成在所述透明基板上的漏电极和形成在所述透明基板上的透明像素电极，其中所述透明像素电极是透明导电膜其主要由氧化铟制成，并且还包含一种或两种以上选自氧化钨，氧化钼，氧化镍和氧化铌的氧化物，透明像素电极与源电极或漏电极电连接; 其制造方法; 以及使用该薄膜晶体管基板的液晶显示器。

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