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    • 2. 发明授权
    • Semiconductor light emitting device
    • 半导体发光器件
    • US06426518B1
    • 2002-07-30
    • US09477830
    • 2000-01-05
    • Yukio ShakudaYukio MatsumotoShunji Nakata
    • Yukio ShakudaYukio MatsumotoShunji Nakata
    • H01L2715
    • H01L33/30H01L33/14H01L2224/32245H01L2224/32257H01L2224/45144H01L2224/48091H01L2224/48247H01L2924/00014H01L2924/00
    • A light emitting layer forming portion (9) comprising InGaAlP based compound semiconductor and forming a light emitting layer is deposited on an n-type GaAs substrate (1), a p-type current dispersion layer (5) comprising AlGaAs based compound semiconductor is provided on a surface of the light emitting layer forming portion (9), a p-side electrode (7) is provided on a portion of a surface of the current dispersion layer (5) through a contact layer (6) comprising p-type GaAs, and an n-side electrode (8) is provided on a back. surface of the GaAs substrate (1). Vickers' hardness of the current dispersion layer (5) comprising AlGaAs is 700 or higher. As a result, at the time of handling for mounting, or wire bonding, a fracture or a crack is not generated in the LED chip, and it is possible to enhance the yield of assembling steps.
    • 在n型GaAs衬底(1)上沉积包括InGaAlP基化合物半导体并形成发光层的发光层形成部分(9),包括AlGaAs基化合物半导体的p型电流分散层(5) 在发光层形成部分(9)的表面上,通过包括p型GaAs的接触层(6)在电流分散层(5)的表面的一部分上设置p侧电极(7) 并且在背面设置有n侧电极(8)。 GaAs衬底(1)的表面。 包含AlGaAs的电流色散层(5)的维氏硬度为700以上。 结果,在处理安装或引线接合时,在LED芯片中不产生断裂或裂纹,并且可以提高组装步骤的产量。
    • 3. 发明授权
    • Semiconductor light emitting device using an AlGaInP group or AlGaAs group material
    • 使用AlGaInP组或AlGaAs族材料的半导体发光器件
    • US06236067B1
    • 2001-05-22
    • US09203405
    • 1998-12-02
    • Yukio ShakudaYukio MatsumotoShunji Nakata
    • Yukio ShakudaYukio MatsumotoShunji Nakata
    • H01L3300
    • H01L33/36H01L33/30
    • A semiconductor light emitting device is disclosed. An emitting layer forming portion for forming an emitting layer made of a compound semiconductor of AlGaInP group or AlGaAs group including a n-type layer, an active layer and a p-type layer laid one on another is formed on a GaAs substrate. Further, a current diffusion layer of GaP is formed on the front surface of the emitting layer forming portion. The p-type layer between the active layer and the current diffusion layer is formed to the thickness of not less than about 2 &mgr;m, or the current diffusion layer is formed to the thickness of about 3 to 7 &mgr;m. As a result, the semiconductor light emitting device of a high luminance is thus realized, in which the distortion due to the lattice mismatch has no effect on the emitting layer.
    • 公开了一种半导体发光器件。 在GaAs衬底上形成用于形成由AlGaInP基的化合物半导体形成的发光层的发光层形成部或包含n型层,有源层和p型层的AlGaAs基。 此外,在发光层形成部分的前表面上形成GaP的电流扩散层。 活性层与电流扩散层之间的p型层形成为不小于2μm的厚度,或者电流扩散层形成为约3〜7μm的厚度。 结果,因此实现了由于晶格失配引起的失真对发光层没有影响的高亮度的半导体发光器件。
    • 7. 发明授权
    • Semiconductor light emitting device
    • 半导体发光器件
    • US07154127B2
    • 2006-12-26
    • US11027945
    • 2005-01-04
    • Yukio ShakudaYukio MatsumotoNobuaki Oguro
    • Yukio ShakudaYukio MatsumotoNobuaki Oguro
    • H01L33/00
    • H01L33/38H01L33/42
    • A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface. A current diffusing electrode is formed on the entire surface thereof. A bonding electrode is formed thereon. The semiconductor laminating portion and the current diffusing electrode are separated into light emitting unit portions A, electrode pad portion B, and connecting portions C for connecting between electrode pad portion B and light emitting unit portions A or between two of the light emitting unit portions A, and the semiconductor laminating portion between the light emitting unit portions A is removed through etching to make clearances except for connecting portions C. The bonding electrode is formed on electrode pad portion B.
    • 在半导体衬底上形成包括具有至少n型层和p型层的发光层形成部的半导体层叠部。 电流阻挡层部分地形成在其表面上。 在其整个表面上形成电流扩散电极。 在其上形成接合电极。 半导体层叠部分和电流扩散电极被分离成发光单元部分A,电极焊盘部分B和用于连接电极焊盘部分B和发光单元部分A之间或两个发光单元部分A之间的连接部分C 通过蚀刻去除发光单元部分A之间的半导体层叠部分,以除了连接部分C之外的间隙。接合电极形成在电极焊盘部分B上。
    • 8. 发明授权
    • Semiconductor light emitting device
    • 半导体发光器件
    • US07019323B2
    • 2006-03-28
    • US10690580
    • 2003-10-23
    • Yukio ShakudaYukio MatsumotoNobuaki Oguro
    • Yukio ShakudaYukio MatsumotoNobuaki Oguro
    • H01L29/06
    • H01L33/405Y10S257/918
    • A semiconductor light emitting device is formed by adhering a semiconductor layered portion having a light emitting layer forming portion to a conductive substrate via a metal layer. The metal layer has at least a first metal layer for ohmic contact with the semiconductor layered portion, a second metal layer made of Ag, and a third metal layer made of a metal which allows adhesion to the conductive substrate at a low temperature. As a result, the rate of reflection of light from the metal layer increases due to the presence of Ag in the metal layer. Further, the metal in the metal layer is prohibited from diffusing into the semiconductor layer, so that the semiconductor layer does not absorb light. And therefore the brightness of the semiconductor light emitting device can further be increased.
    • 通过将具有发光层形成部分的半导体层叠部分经由金属层粘附到导电基板来形成半导体发光器件。 金属层至少具有用于与半导体层叠部分欧姆接触的第一金属层,由Ag制成的第二金属层和由金属制成的第三金属层,其允许在低温下粘附到导电基板。 结果,由于在金属层中存在Ag,来自金属层的光的反射率增加。 此外,金属层中的金属被禁止扩散到半导体层中,使得半导体层不吸收光。 因此,能够进一步提高半导体发光元件的亮度。
    • 9. 发明授权
    • Semiconductor light emitting device
    • 半导体发光器件
    • US07034342B2
    • 2006-04-25
    • US10682518
    • 2003-10-10
    • Yukio ShakudaYukio MatsumotoNobuaki Oguro
    • Yukio ShakudaYukio MatsumotoNobuaki Oguro
    • H01L33/00
    • H01L33/02H01L33/30
    • A light emitting layer forming portion is provided on a semiconductor substrate, in which an active layer made of a compound semiconductor is sandwiched between a first and second clad layers made of compound semiconductor having band gap greater than that of the active layer, respectively and having a different conductivity type each other and furthermore a window layer is provided above the second clad layer. The second clad layer is made of a semiconductor having refractive index greater than that of the first clad layer. More preferably the window layer is made of a semiconductor having a refractive index greater than that of the second clad layer. As a result, the absorption of the light emitted from the light emitting layer in the semiconductor substrate can be reduced, and the light can be attracted toward the top surface so that the external quantum efficiency can be advanced.
    • 发光层形成部分设置在半导体衬底上,其中由化合物半导体制成的有源层分别夹在由具有大于有源层的带隙的化合物半导体制成的第一和第二覆盖层之间,并且具有 彼此不同的导电类型,此外,在第二覆盖层上方设置窗口层。 第二覆盖层由折射率大于第一覆盖层的折射率的半导体制成。 更优选地,窗口层由折射率大于第二包层的折射率的半导体制成。 结果,可以减少从半导体衬底中的发光层发射的光的吸收,并且可以将光吸引到顶表面,从而可以提高外部量子效率。
    • 10. 发明授权
    • Semiconductor light emitting device
    • 半导体发光器件
    • US07112825B2
    • 2006-09-26
    • US11052296
    • 2005-02-08
    • Yukio ShakudaYukio MatsumotoNobuaki Oguro
    • Yukio ShakudaYukio MatsumotoNobuaki Oguro
    • H01L29/06
    • H01L33/38H01L33/42
    • A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface while a current diffusing electrode is formed on the entire surface thereof. The current diffusing electrode is patterned into a plurality of light emitting unit portions (A), electrode pad portion (B), and connecting portions (C) for connecting between the electrode pad portion (B) and the light emitting unit portions (A) or between two of the light emitting unit portions (A), and a part of the semiconductor laminating portion may be etched according to the patterning of the current diffusing electrode. The bonding electrode may be formed on the electrode pad portion (B) which is formed so as to make the light emitting layer forming portion non-luminous.
    • 在半导体衬底上形成包括具有至少n型层和p型层的发光层形成部的半导体层叠部。 在其表面上部分地形成电流阻挡层,同时在其整个表面上形成电流扩散电极。 电流扩散电极被图案化成多个发光单元部分(A),电极焊盘部分(B)和用于连接电极焊盘部分(B)和发光单元部分(A)的连接部分(C) 或两个发光单元部分(A)之间,并且可以根据电流扩散电极的图案化蚀刻半导体层叠部分的一部分。 接合电极可以形成在形成为使发光层形成部分不发光的电极焊盘部分(B)上。