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1. 发明授权

US6107647A Semiconductor AlGaInP light emitting device 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US6107647A
公开(公告)日：2000-08-22
申请号：US79260
申请日：1998-05-15
申请人： Yukio Matsumoto , Shunji Nakata , Yukio Shakuda
发明人： Yukio Matsumoto , Shunji Nakata , Yukio Shakuda
IPC分类号： H01L33/02 , H01L33/14 , H01L33/30 , H01L33/00
CPC分类号： H01L33/30 , H01L33/02 , H01L33/14 , H01L33/305
摘要： A semiconductor light emitting device has a light emitting layer forming portion formed on the substrate and having an n-type layer and a p-type layer to provide a light emitting layer. A window layer is formed on a surface side of the light emitting layer forming portion. The window layer is formed of AlyGal-yAs (0.6.ltoreq.y.ltoreq.0.8) auto-doped in a carrier concentration of 5.times.10.sup.18 -3.times.10.sup.19 cm.sup.-3. The resulting semiconductor light emitting device is free of degradation in crystallinity due to p-type impurity doping, thereby provide a high light emitting efficiency and brightness without encountering device degradation or damage.
摘要翻译：半导体发光器件具有形成在衬底上并具有n型层和p型层以提供发光层的发光层形成部分。在发光层形成部分的表面侧上形成窗口层。窗口层由载体浓度为5×1018-3×1019cm-3自动掺杂的AllyGal-yAs（0.6≤y≤0.8）形成。所得到的半导体发光器件由于p型杂质掺杂而不会降低结晶度，从而提供高的发光效率和亮度，而不会遇到器件劣化或损坏。

2. 发明授权

US06426518B1 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US06426518B1
公开(公告)日：2002-07-30
申请号：US09477830
申请日：2000-01-05
申请人： Yukio Shakuda , Yukio Matsumoto , Shunji Nakata
发明人： Yukio Shakuda , Yukio Matsumoto , Shunji Nakata
IPC分类号： H01L2715
CPC分类号： H01L33/30 , H01L33/14 , H01L2224/32245 , H01L2224/32257 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/00
摘要： A light emitting layer forming portion (9) comprising InGaAlP based compound semiconductor and forming a light emitting layer is deposited on an n-type GaAs substrate (1), a p-type current dispersion layer (5) comprising AlGaAs based compound semiconductor is provided on a surface of the light emitting layer forming portion (9), a p-side electrode (7) is provided on a portion of a surface of the current dispersion layer (5) through a contact layer (6) comprising p-type GaAs, and an n-side electrode (8) is provided on a back. surface of the GaAs substrate (1). Vickers' hardness of the current dispersion layer (5) comprising AlGaAs is 700 or higher. As a result, at the time of handling for mounting, or wire bonding, a fracture or a crack is not generated in the LED chip, and it is possible to enhance the yield of assembling steps.
摘要翻译：在n型GaAs衬底（1）上沉积包括InGaAlP基化合物半导体并形成发光层的发光层形成部分（9），包括AlGaAs基化合物半导体的p型电流分散层（5）在发光层形成部分（9）的表面上，通过包括p型GaAs的接触层（6）在电流分散层（5）的表面的一部分上设置p侧电极（7）并且在背面设置有n侧电极（8）。 GaAs衬底（1）的表面。包含AlGaAs的电流色散层（5）的维氏硬度为700以上。结果，在处理安装或引线接合时，在LED芯片中不产生断裂或裂纹，并且可以提高组装步骤的产量。

3. 发明授权

US06236067B1 Semiconductor light emitting device using an AlGaInP group or AlGaAs group material 有权
标题翻译：使用AlGaInP组或AlGaAs族材料的半导体发光器件
公开(公告)号：US06236067B1
公开(公告)日：2001-05-22
申请号：US09203405
申请日：1998-12-02
申请人： Yukio Shakuda , Yukio Matsumoto , Shunji Nakata
发明人： Yukio Shakuda , Yukio Matsumoto , Shunji Nakata
IPC分类号： H01L3300
CPC分类号： H01L33/36 , H01L33/30
摘要： A semiconductor light emitting device is disclosed. An emitting layer forming portion for forming an emitting layer made of a compound semiconductor of AlGaInP group or AlGaAs group including a n-type layer, an active layer and a p-type layer laid one on another is formed on a GaAs substrate. Further, a current diffusion layer of GaP is formed on the front surface of the emitting layer forming portion. The p-type layer between the active layer and the current diffusion layer is formed to the thickness of not less than about 2 &mgr;m, or the current diffusion layer is formed to the thickness of about 3 to 7 &mgr;m. As a result, the semiconductor light emitting device of a high luminance is thus realized, in which the distortion due to the lattice mismatch has no effect on the emitting layer.
摘要翻译：公开了一种半导体发光器件。在GaAs衬底上形成用于形成由AlGaInP基的化合物半导体形成的发光层的发光层形成部或包含n型层，有源层和p型层的AlGaAs基。此外，在发光层形成部分的前表面上形成GaP的电流扩散层。活性层与电流扩散层之间的p型层形成为不小于2μm的厚度，或者电流扩散层形成为约3〜7μm的厚度。结果，因此实现了由于晶格失配引起的失真对发光层没有影响的高亮度的半导体发光器件。

4. 发明授权

US6107648A Semiconductor light emitting device having a structure which relieves lattice mismatch 失效
标题翻译：具有减轻晶格失配的结构的半导体发光器件
公开(公告)号：US6107648A
公开(公告)日：2000-08-22
申请号：US41694
申请日：1998-03-13
申请人： Yukio Shakuda , Shunji Nakata , Yukio Matsumoto
发明人： Yukio Shakuda , Shunji Nakata , Yukio Matsumoto
IPC分类号： H01L33/02 , H01L33/14 , H01L33/30 , H01L33/42 , H01L33/00
CPC分类号： H01L33/42 , H01L33/02 , H01L33/14 , H01L33/30
摘要： A light emitting layer forming portion is formed of an AlGaInP-based compound semiconductor and having an n-type layer and a p-type layer to form a light emitting layer on the substrate. A large bandgap energy semiconductor layer is provided on a surface of the light emitting layer forming portion to constitute a window layer. A buffer layer is interposed between the light emitting layer forming portion and the large bandgap energy semiconductor layer to relieve lattice mismatch of between the light emitting layer forming portion and the large bandgap energy semiconductor layer. The interposition of this buffer layer provides a light emitting device that is high in light emitting efficiency and excellent in electrical characteristics without degrading the film property of the window layer.
摘要翻译：发光层形成部分由AlGaInP基化合物半导体形成，并具有n型层和p型层，以在衬底上形成发光层。在发光层形成部分的表面上提供大的带隙能量半导体层以构成窗口层。在发光层形成部分和大带隙能量半导体层之间插入缓冲层，以缓解发光层形成部分和大带隙能量半导体层之间的晶格失配。该缓冲层的插入提供了发光效率高，电特性优异的发光器件，而不降低窗口层的膜特性。

5. 发明授权

US06329216B1 Method of manufacturing an AlGaInP light emitting device using auto-doping 失效
标题翻译：使用自动掺杂的AlGaInP发光器件的制造方法
公开(公告)号：US06329216B1
公开(公告)日：2001-12-11
申请号：US09597568
申请日：2000-06-20
申请人： Yukio Matsumoto , Shunji Nakata , Yukio Shakuda
发明人： Yukio Matsumoto , Shunji Nakata , Yukio Shakuda
IPC分类号： H01L2100
CPC分类号： H01L33/30 , H01L33/02 , H01L33/14 , H01L33/305
摘要： A semiconductor light emitting device has a light emitting layer forming portion formed on the substrate and having an n-type layer and a p-type layer to provide a light emitting layer. A window layer is formed on a surface side of the light emitting layer forming portion. The window layer is formed of AlyGal−yAs (0.6≦y≦0.8) auto-doped in a carrier concentration of 5×1018-3×1019 cm−3. The resulting semiconductor light emitting device is free of degradation in crystallinity due to p-type impurity doping, thereby provide a high light emitting efficiency and brightness without encountering device degradation or damage.
摘要翻译：半导体发光器件具有形成在衬底上并具有n型层和p型层以提供发光层的发光层形成部分。在发光层形成部分的表面侧上形成窗口层。窗口层由载流子浓度为5×10 18 -3×10 19 cm -3自动掺杂的AllyGal-yAs（0.6 <= y <= 0.8）形成。所得到的半导体发光器件由于p型杂质掺杂而不会降低结晶度，从而提供高的发光效率和亮度，而不会遇到器件劣化或损坏。

6. 发明授权

US6163037A Double heterojunction light emitting device possessing a dopant gradient across the N-type layer 失效
标题翻译：双异质结发光器件在N型层上具有掺杂剂梯度
公开(公告)号：US6163037A
公开(公告)日：2000-12-19
申请号：US79262
申请日：1998-05-15
申请人： Yukio Matsumoto , Shunji Nakata , Yukio Shakuda
发明人： Yukio Matsumoto , Shunji Nakata , Yukio Shakuda
IPC分类号： H01L33/12 , H01L33/14 , H01L33/30 , H01S5/00 , H01L33/00
CPC分类号： H01L33/02 , H01L33/025 , H01L33/30
摘要： An active layer is sandwiched between the n-type cladding layer and the p-type cladding layer, forming a light emitting layer forming portion. The n-type cladding layer has a carrier concentration of non-doped or less than 5.times.10.sup.17 cm.sup.-3 on a side thereof close to the active layer, and a carrier concentration of 7.times.10.sup.17 -7.times.10.sup.18 cm .sup.-3 on a side thereof remote from the active layer. With this structure, it is possible to suppress to a minimum the deterioration of crystallinity at an interface between the active layer and the n-type cladding layer as well as in the active layer. thereby providing a semiconductor light emitting device high in brightness.
摘要翻译：有源层被夹在n型覆层和p型覆层之间，形成发光层形成部分。 n型包层在其接近有源层的一侧上具有非掺杂或小于5×10 17 cm -3的载流子浓度，并且其远离活性物质的一侧的载流子浓度为7×10 17 -7×10 18 cm -3 层。利用这种结构，可以最大限度地抑制有源层和n型包层之间以及活性层中的界面处的结晶度的劣化。从而提供高亮度的半导体发光器件。

7. 发明授权

US07154127B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07154127B2
公开(公告)日：2006-12-26
申请号：US11027945
申请日：2005-01-04
申请人： Yukio Shakuda , Yukio Matsumoto , Nobuaki Oguro
发明人： Yukio Shakuda , Yukio Matsumoto , Nobuaki Oguro
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/42
摘要： A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface. A current diffusing electrode is formed on the entire surface thereof. A bonding electrode is formed thereon. The semiconductor laminating portion and the current diffusing electrode are separated into light emitting unit portions A, electrode pad portion B, and connecting portions C for connecting between electrode pad portion B and light emitting unit portions A or between two of the light emitting unit portions A, and the semiconductor laminating portion between the light emitting unit portions A is removed through etching to make clearances except for connecting portions C. The bonding electrode is formed on electrode pad portion B.
摘要翻译：在半导体衬底上形成包括具有至少n型层和p型层的发光层形成部的半导体层叠部。电流阻挡层部分地形成在其表面上。在其整个表面上形成电流扩散电极。在其上形成接合电极。半导体层叠部分和电流扩散电极被分离成发光单元部分A，电极焊盘部分B和用于连接电极焊盘部分B和发光单元部分A之间或两个发光单元部分A之间的连接部分C 通过蚀刻去除发光单元部分A之间的半导体层叠部分，以除了连接部分C之外的间隙。接合电极形成在电极焊盘部分B上。

8. 发明授权

US07019323B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US07019323B2
公开(公告)日：2006-03-28
申请号：US10690580
申请日：2003-10-23
申请人： Yukio Shakuda , Yukio Matsumoto , Nobuaki Oguro
发明人： Yukio Shakuda , Yukio Matsumoto , Nobuaki Oguro
IPC分类号： H01L29/06
CPC分类号： H01L33/405 , Y10S257/918
摘要： A semiconductor light emitting device is formed by adhering a semiconductor layered portion having a light emitting layer forming portion to a conductive substrate via a metal layer. The metal layer has at least a first metal layer for ohmic contact with the semiconductor layered portion, a second metal layer made of Ag, and a third metal layer made of a metal which allows adhesion to the conductive substrate at a low temperature. As a result, the rate of reflection of light from the metal layer increases due to the presence of Ag in the metal layer. Further, the metal in the metal layer is prohibited from diffusing into the semiconductor layer, so that the semiconductor layer does not absorb light. And therefore the brightness of the semiconductor light emitting device can further be increased.
摘要翻译：通过将具有发光层形成部分的半导体层叠部分经由金属层粘附到导电基板来形成半导体发光器件。金属层至少具有用于与半导体层叠部分欧姆接触的第一金属层，由Ag制成的第二金属层和由金属制成的第三金属层，其允许在低温下粘附到导电基板。结果，由于在金属层中存在Ag，来自金属层的光的反射率增加。此外，金属层中的金属被禁止扩散到半导体层中，使得半导体层不吸收光。因此，能够进一步提高半导体发光元件的亮度。

9. 发明授权

US07034342B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US07034342B2
公开(公告)日：2006-04-25
申请号：US10682518
申请日：2003-10-10
申请人： Yukio Shakuda , Yukio Matsumoto , Nobuaki Oguro
发明人： Yukio Shakuda , Yukio Matsumoto , Nobuaki Oguro
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/30
摘要： A light emitting layer forming portion is provided on a semiconductor substrate, in which an active layer made of a compound semiconductor is sandwiched between a first and second clad layers made of compound semiconductor having band gap greater than that of the active layer, respectively and having a different conductivity type each other and furthermore a window layer is provided above the second clad layer. The second clad layer is made of a semiconductor having refractive index greater than that of the first clad layer. More preferably the window layer is made of a semiconductor having a refractive index greater than that of the second clad layer. As a result, the absorption of the light emitted from the light emitting layer in the semiconductor substrate can be reduced, and the light can be attracted toward the top surface so that the external quantum efficiency can be advanced.
摘要翻译：发光层形成部分设置在半导体衬底上，其中由化合物半导体制成的有源层分别夹在由具有大于有源层的带隙的化合物半导体制成的第一和第二覆盖层之间，并且具有彼此不同的导电类型，此外，在第二覆盖层上方设置窗口层。第二覆盖层由折射率大于第一覆盖层的折射率的半导体制成。更优选地，窗口层由折射率大于第二包层的折射率的半导体制成。结果，可以减少从半导体衬底中的发光层发射的光的吸收，并且可以将光吸引到顶表面，从而可以提高外部量子效率。

10. 发明授权

US07112825B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07112825B2
公开(公告)日：2006-09-26
申请号：US11052296
申请日：2005-02-08
申请人： Yukio Shakuda , Yukio Matsumoto , Nobuaki Oguro
发明人： Yukio Shakuda , Yukio Matsumoto , Nobuaki Oguro
IPC分类号： H01L29/06
CPC分类号： H01L33/38 , H01L33/42
摘要： A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface while a current diffusing electrode is formed on the entire surface thereof. The current diffusing electrode is patterned into a plurality of light emitting unit portions (A), electrode pad portion (B), and connecting portions (C) for connecting between the electrode pad portion (B) and the light emitting unit portions (A) or between two of the light emitting unit portions (A), and a part of the semiconductor laminating portion may be etched according to the patterning of the current diffusing electrode. The bonding electrode may be formed on the electrode pad portion (B) which is formed so as to make the light emitting layer forming portion non-luminous.
摘要翻译：在半导体衬底上形成包括具有至少n型层和p型层的发光层形成部的半导体层叠部。在其表面上部分地形成电流阻挡层，同时在其整个表面上形成电流扩散电极。电流扩散电极被图案化成多个发光单元部分（A），电极焊盘部分（B）和用于连接电极焊盘部分（B）和发光单元部分（A）的连接部分（C）或两个发光单元部分（A）之间，并且可以根据电流扩散电极的图案化蚀刻半导体层叠部分的一部分。接合电极可以形成在形成为使发光层形成部分不发光的电极焊盘部分（B）上。

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