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    • 2. 发明授权
    • Resist and method of forming resist pattern
    • 抗蚀剂图案的抗蚀剂和方法
    • US07514197B2
    • 2009-04-07
    • US10527068
    • 2003-09-04
    • Yukinori OchiaiMasahiko IshidaJunichi FujitaTakashi OguraJunji MomodaEiji Oshima
    • Yukinori OchiaiMasahiko IshidaJunichi FujitaTakashi OguraJunji MomodaEiji Oshima
    • G03C1/73G03F7/20G03F7/30G03F7/32G03F7/36
    • G03F7/038Y10S430/108Y10S430/143Y10S430/167
    • The resist according to the present invention includes any one of tetrachloromethyl tetramethoxycalix [4] arene and trichloromethyl tetramethoxycalix [4] arene. The resist including such kind of components is soluble in the solvent having less effect to worsen a working environment, namely, ethyl lactate (EL), propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), ethyl propionate, n-butyl acetate and 2-heptanone. It can be developed by tetra-methyl ammonium hydroxide in addition to the above mentioned solvent. By exposing this resist by electronic ray, high resolution of 8 nm is attained, and by using this resist as a mask, various materials can be formed into a hyperfine shape. According to such kind of resist, a photosensitive resist material which has high resolution and solvable to solvents having less effect to worsen the working environment and can be developed by the solvents, a exposure method using it, and a hyperfine processing method using it are provided.
    • 根据本发明的抗蚀剂包括四氯甲基四甲氧基钙[4]芳烃和三氯甲基四甲氧基钙[4]芳烃中的任一种。 包含这种组分的抗蚀剂可溶于对工作环境恶化的影响较小的溶剂,即乳酸乙酯(EL),丙二醇单甲醚(PGME),丙二醇单甲醚乙酸酯(PGMEA),丙酸乙酯, 乙酸丁酯和2-庚酮。 除了上述溶剂之外,还可以通过四甲基氢氧化铵来显影。 通过电子射线曝光该抗蚀剂,达到8nm的高分辨率,通过使用该抗蚀剂作为掩模,可以将各种材料形成为超精细的形状。 根据这种抗蚀剂,提供了具有高分辨率且可溶于溶剂的光敏抗蚀剂材料,其效果较差,可以使工作环境恶化并且可以通过溶剂显影,使用它的曝光方法和使用它的超精细加工方法 。