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1. 发明授权

US5470390A Mixed gas supply system with a backup supply system 失效
标题翻译：混合供气系统配备备用供电系统
公开(公告)号：US5470390A
公开(公告)日：1995-11-28
申请号：US236117
申请日：1994-05-02
申请人： Yukinobu Nishikawa , Yoshinori Hashizume , Takako Kimura
发明人： Yukinobu Nishikawa , Yoshinori Hashizume , Takako Kimura
IPC分类号： B01F3/02 , B01F15/04 , B01J4/00 , C23C16/44 , C23C16/00
CPC分类号： C23C16/45561 , B01F3/026 , B01J4/008 , C23C16/44
摘要： A first MFC 10 and a second MFC 10A are disposed respectively on a silane gas feed line 5 and an inert gas or other dilution gas feed line 19 for feeding a gas for semiconductors such as silane gas or an inert gas or other dilution gas to a mixing chamber 13. A buffer tank 21 is provided which restrains or relieves the pressure energy of the mixed gas coming from the mixing chamber 13 and supplies the same mixed gas to each of a plurality of semiconductor manufacturing units 4 separately. The first MFC 10 and second MFC 10A are actuated to open or close on the basis of an increase or decrease in the pressure value of the mixed gas stored in the buffer tank 21, thereby stopping or starting the feed of the silane gas and the inert gas or other dilution gas again.
摘要翻译：第一MFC10和第二MFC 10A分别设置在硅烷气体供给管线5和惰性气体或其它稀释气体供给管线19上，用于将诸如硅烷气体或惰性气体或其它稀释气体的半导体气体供给到混合室13.设置缓冲罐21，其限制或减轻来自混合室13的混合气体的压力能量，并分别向多个半导体制造单元4中的每一个提供相同的混合气体。基于存储在缓冲罐21中的混合气体的压力值的增加或减少，第一MFC10和第二MFC 10A被致动以打开或关闭，从而停止或开始供给硅烷气体和惰性气体或其他稀释气体。

2. 发明申请

US20050020071A1 Method and apparatus for cleaning and method and apparatus for etching 审中-公开
标题翻译：清洗方法和设备以及蚀刻方法和设备
公开(公告)号：US20050020071A1
公开(公告)日：2005-01-27
申请号：US10485721
申请日：2001-07-31
申请人： Jun Sonobe , Yoshikuni Koruda , Regis Zils , Minoru Ino , Takako Kimura , Yukinobu Nishikawa
发明人： Jun Sonobe , Yoshikuni Koruda , Regis Zils , Minoru Ino , Takako Kimura , Yukinobu Nishikawa
IPC分类号： C23C16/44 , C23C16/448 , H01L21/00 , H01L21/302 , H01L21/461
CPC分类号： B08B7/0035 , C23C16/4405 , C23C16/4488 , H01L21/67063
摘要： A cleaning apparatus (30) is connected to a treating chamber (12) of a CVD apparatus (10) for forming a silicon film. The cleaning apparatus (30) has a first, a second, and a third gas sources (32, 34, 36) and a chlorine gas, a fluorine gas, and an inert gas are introduced from the gas sources through FMC (38a, 38b, 38c), respectively, with flow rates controlled independently from one another. Those gases are gathered at a pipe (42) and mixed into a mixed gas. The mixed gas is passed through a heated reactor (44) such as a heat exchanger to thereby react the chlorine gas with the fluorine gas and form a formed gas containing fluorinated chlorine gas such as CIF3. The formed gas is supplied to the treating chamber (12) through a cooler (46), an analyzer (48) and a buffer (54).
摘要翻译：清洁装置（30）连接到用于形成硅膜的CVD装置（10）的处理室（12）。清洁装置（30）具有第一，第二和第三气体源（32,34,36），氯气，氟气和惰性气体通过FMC（38a，38b）从气体源引入，38c），流量彼此独立地控制。这些气体聚集在管道（42）上并混合成混合气体。混合气体通过热交换器等加热反应器（44），使氯气与氟气反应，形成含有氟化氯气的成形气体，例如CIF3。形成的气体通过冷却器（46），分析器（48）和缓冲器（54）供应到处理室（12）。

3. 发明授权

US07942974B2 Method of cleaning a film-forming apparatus 有权
标题翻译：清洗成膜装置的方法
公开(公告)号：US07942974B2
公开(公告)日：2011-05-17
申请号：US11234105
申请日：2005-09-26
申请人： Naoki Tamaoki , Yuusuke Sato , Jun Sonobe , Takamitsu Shigemoto , Takako Kimura
发明人： Naoki Tamaoki , Yuusuke Sato , Jun Sonobe , Takamitsu Shigemoto , Takako Kimura
IPC分类号： B08B9/08
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide and the silicon-based material includes silicon nitride, or the constituent member includes silicon carbide and the silicon-based material includes silicon oxide.
摘要翻译：在形成薄膜之后，清洗成膜装置以去除沉积在成膜装置的构成部件上的硅基材料的方法包括：引入包含氟气的第一气体和包括一氧化碳气体的第二气体进入成膜装置，并加热构成构件。构成构件包括石英或碳化硅，硅基材料包括氮化硅，或者构成构件包括碳化硅，硅基材料包括氧化硅。

4. 发明申请

US20060198958A1 Methods for producing silicon nitride films by vapor-phase growth 审中-公开
标题翻译：通过气相生长生产氮化硅膜的方法
公开(公告)号：US20060198958A1
公开(公告)日：2006-09-07
申请号：US10553573
申请日：2004-04-08
申请人： Christian Dussarrat , Jean-Marc Girard , Takako Kimura , Naoki Tamaoki , Yuusuke Sato
发明人： Christian Dussarrat , Jean-Marc Girard , Takako Kimura , Naoki Tamaoki , Yuusuke Sato
IPC分类号： C23C16/34
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02208 , H01L21/02271 , H01L21/3185
摘要： Methods for the production of silicon nitride films by vapor-phase growth. A hydrazine gas and at least one precursor gas are fed into a reaction chamber containing a substrate. The precursor gas is either a trisilylamine gas or a silylhydrazine gas. A silicone nitride film is formed through the reaction of the hydrazine gas and the precursor gas.
摘要翻译：通过气相生长生产氮化硅膜的方法。将肼气体和至少一种前体气体进料到含有底物的反应室中。前体气体是三甲基胺气体或甲硅烷基肼气体。通过肼气体和前体气体的反应形成氮化硅膜。

5. 发明授权

US08357430B2 Method for producing silicon nitride films 有权
标题翻译：氮化硅膜的制造方法
公开(公告)号：US08357430B2
公开(公告)日：2013-01-22
申请号：US11573727
申请日：2005-08-17
申请人： Christian Dussarrat , Jean-Marc Girard , Takako Kimura
发明人： Christian Dussarrat , Jean-Marc Girard , Takako Kimura
IPC分类号： C23C16/34
CPC分类号： C23C16/345 , H01L21/3185
摘要： (Problem) To provide a method for producing silicon nitride films by vapor deposition that, while employing trisilylamine as precursor, can produce silicon nitride films that exhibit excellent film properties and can do so at relatively low temperatures and relatively high growth rates. (Solution) Method for producing silicon nitride film, said method being characterized by feeding gaseous trisilylamine and gaseous nitrogen source comprising at least two amine-type compounds selected from amine-type compounds with formula (1) NR1R2R3 (R1, R2, and R3 are each independently selected from hydrogen and C1-6 hydrocarbyl) into a reaction chamber that holds at least one substrate and forming silicon nitride film on said at least one substrate by reacting the trisilylamine and said nitrogen source.
摘要翻译：（问题）为了提供通过气相沉积制造氮化硅膜的方法，在使用三甲胺作为前体的同时，可以生产出显示出优异的膜性能的氮化硅膜，并且可以在相对较低的温度和较高的生长速率下进行。（溶液）氮化硅膜的制造方法，其特征在于，供给气态三甲胺和气态氮源，所述气态三甲胺和气态氮源包含至少两种选自式（1）的胺类化合物的胺类化合物：NR1R2R3（R1，R2和R3分别为各自独立地选自氢和C 1-6烃基）转化成反应室，其保持至少一个基底并通过使三甲胺和所述氮源反应在所述至少一个基底上形成氮化硅膜。

6. 发明授权

US07351670B2 Method for producing silicon nitride films and process for fabricating semiconductor devices using said method 失效
标题翻译：用于制造氮化硅膜的方法和使用所述方法制造半导体器件的工艺
公开(公告)号：US07351670B2
公开(公告)日：2008-04-01
申请号：US11020712
申请日：2004-12-23
申请人： Takeshi Hoshi , Tsuyoshi Saito , Takako Kimura , Christian Dussarrat , Kazutaka Yanagita
发明人： Takeshi Hoshi , Tsuyoshi Saito , Takako Kimura , Christian Dussarrat , Kazutaka Yanagita
IPC分类号： H01L21/31
CPC分类号： C23C16/345 , H01L21/3185
摘要： Silicon nitride film is formed on a silicon wafer mounted in a boat in an LPCVD tool by feeding a silicon source (SiH2Cl2, SiCl4, Si2Cl6, etc.) from an injector and feeding a mixed gas of monomethylamine (CH3NH2) and ammonia (NH3) as the nitrogen source from an injector. This addition of monomethylamine to the source substances for film production makes it possible to provide an improved film quality and improved leakage characteristics even at low temperatures (450-600° C.).
摘要翻译：在LPCVD工具中，在安装在船上的硅晶片上形成硅氮化物膜，该硅源通过馈送硅源（SiH 2 2 Cl 2 Si 2 Si 3 S 2， >，Si 2 C 6 C 6等），并将一甲胺（CH 3 N 2 NH 2）的混合气体进料， / NH 3）和氨（NH 3 N 3）作为来自注射器的氮源。通过将这种单甲胺添加到用于薄膜生产的源物质中，即使在低温（450-600℃）下也可以提供改进的膜质量和改善的泄漏特性。

7. 发明授权

US5054309A Process for producing low-concentration gas mixtures, and apparatus for producing the same 失效
标题翻译：用于生产低浓度气体混合物的方法，以及用于生产低浓度气体混合物的装置
公开(公告)号：US5054309A
公开(公告)日：1991-10-08
申请号：US437615
申请日：1989-11-17
申请人： Jacques Mettes , Takako Kimura , Michael Schack
发明人： Jacques Mettes , Takako Kimura , Michael Schack
IPC分类号： G01N1/36 , B01F3/02 , B01F15/04 , G01N1/00 , G01N33/00 , H01J49/04 , H01J49/38
CPC分类号： G01N33/0018 , B01F3/026 , G01N33/0006 , Y10T137/0352
摘要： This invention relates to a process for producing gas mixtures by a plurality of dilution steps of a high concentration standard gas with a high purity diluent gas. According to the invention, as soon as the high purity diluent gas is generated, no further contaminants such as gaseous impurities are added during the further mixing of diluting steps of the process. Only orifices or needle valves are used in the mixing or diluting lines while mass flow controllers and pressure regulators are placed upstream, at the output of the gas sources and/or downstream, i.e. in the gas-venting lines. The invention particularly applies to trace analysis of gas with Atmospheric Pressure Ionization Mass Spectrometry.

8. 发明授权

US07192626B2 Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition 有权
标题翻译：通过热化学气相沉积制造氮化硅膜和氧氮化硅膜的方法
公开(公告)号：US07192626B2
公开(公告)日：2007-03-20
申请号：US10669623
申请日：2003-09-24
申请人： Christian Dussarrat , Jean-Marc Girard , Takako Kimura , Naoki Tamaoki , Yuusuke Sato
发明人： Christian Dussarrat , Jean-Marc Girard , Takako Kimura , Naoki Tamaoki , Yuusuke Sato
IPC分类号： C23C16/34
CPC分类号： H01L21/02271 , C23C16/308 , C23C16/345 , H01L21/0214 , H01L21/0217 , H01L21/02219 , H01L21/3145 , H01L21/3185
摘要： Silicon nitride film is formed on substrate by feeding trisilylamine and ammonia into a CVD reaction chamber that contains a substrate. The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber. This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.
摘要翻译：通过将三甲胺和氨进料到含有基板的CVD反应室中，在基板上形成氮化硅膜。将氨气/三甲硅烷气体流量比设定为至少约10的值和/或热CVD反应在不高于约600℃的温度下运行。氮氧化硅通过将氧源气体引入 CVD反应室。该方法避免了氯化铵的生成和/或碳质污染物的结合，这对沉积膜的质量是有害的。

9. 发明申请

US20060065289A1 Method of cleaning a film-forming apparatus and film-forming apparatus 有权
标题翻译：清洗成膜装置和成膜装置的方法
公开(公告)号：US20060065289A1
公开(公告)日：2006-03-30
申请号：US11234105
申请日：2005-09-26
申请人： Naoki Tamaoki , Yuusuke Sato , Jun Sonobe , Takamitsu Shigemoto , Takako Kimura
发明人： Naoki Tamaoki , Yuusuke Sato , Jun Sonobe , Takamitsu Shigemoto , Takako Kimura
IPC分类号： C23G1/00 , C23C16/00
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide and the silicon-based material includes silicon nitride, or the constituent member includes silicon carbide and the silicon-based material includes silicon oxide.
摘要翻译：在形成薄膜之后，清洗成膜装置以去除沉积在成膜装置的构成部件上的硅基材料的方法包括：引入包含氟气的第一气体和包括一氧化碳气体的第二气体进入成膜装置，并加热构成构件。构成构件包括石英或碳化硅，硅基材料包括氮化硅，或者构成构件包括碳化硅，硅基材料包括氧化硅。

10. 发明申请

US20050100670A1 Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition 有权
标题翻译：通过热化学气相沉积制造氮化硅膜和氧氮化硅膜的方法
公开(公告)号：US20050100670A1
公开(公告)日：2005-05-12
申请号：US10669623
申请日：2003-09-24
申请人： Christian Dussarrat , Jean-Marc Girard , Takako Kimura , Naoki Tamaoki , Yuusuke Sato
发明人： Christian Dussarrat , Jean-Marc Girard , Takako Kimura , Naoki Tamaoki , Yuusuke Sato
IPC分类号： C23C16/42 , C23C16/30 , C23C16/34 , H01L21/314 , H01L21/318 , C23C16/00
CPC分类号： H01L21/02271 , C23C16/308 , C23C16/345 , H01L21/0214 , H01L21/0217 , H01L21/02219 , H01L21/3145 , H01L21/3185
摘要： Silicon nitride film is formed on substrate (112) by feeding trisilylamine and ammonia into a CVD reaction chamber (11) that contains a substrate (112). The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber (11). This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.
摘要翻译：通过将三甲胺和氨进料到含有基板（112）的CVD反应室（11）中，在基板（112）上形成氮化硅膜。将氨气/三甲硅烷气体流量比设定为至少约10的值和/或热CVD反应在不高于约600℃的温度下运行。氮氧化硅通过将氧源气体引入 CVD反应室（11）。该方法避免了氯化铵的生成和/或碳质污染物的结合，这对沉积膜的质量是有害的。

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