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1. 发明申请

US20100140718A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100140718A1
公开(公告)日：2010-06-10
申请号：US12706295
申请日：2010-02-16
申请人： Yukihiro Sato , Norio Kido , Tatsuhiro Seki , Katsuo Ishizaka , Ichio Shimizu
发明人： Yukihiro Sato , Norio Kido , Tatsuhiro Seki , Katsuo Ishizaka , Ichio Shimizu
IPC分类号： H01L27/092
CPC分类号： H01L23/49575 , H01L23/485 , H01L23/49568 , H01L23/49582 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L2224/04042 , H01L2224/05647 , H01L2224/0603 , H01L2224/2919 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/48647 , H01L2224/48747 , H01L2224/48847 , H01L2224/49171 , H01L2224/73265 , H01L2224/83805 , H01L2224/8385 , H01L2224/85447 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/00011
摘要： A semiconductor device having a plurality of chips is reduced in size. In HSOP (semiconductor device) for driving a three-phase motor, a first semiconductor chip including a pMISFET and a second semiconductor chip including an nMISFET are mounted over each of a first tab, second tab, and third tab. The drains of the pMISFET and nMISFET over each tab are electrically connected with each other. Thus, two of six MISFETs can be placed over each of three tabs divided in correspondence with the number of phases of the motor, and they can be packaged in one in a compact manner. As a result, the size of the HSOP for driving a three-phase motor, having a plurality of chips can be reduced.
摘要翻译：具有多个芯片的半导体器件的尺寸减小。在用于驱动三相电机的HSOP（半导体器件）中，包括pMISFET的第一半导体芯片和包括nMISFET的第二半导体芯片安装在第一突片，第二突片和第三突片的每一个上。 pMISFET和nMISFET的漏极在每个接片上彼此电连接。因此，可以将六个MISFET中的两个放置在与电机的相位数相对应地分开的三个接片中的每一个上，并且它们可以以紧凑的方式封装在一个中。结果，可以减少具有多个芯片的用于驱动三相电动机的HSOP的尺寸。

2. 发明申请

US20070001273A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20070001273A1
公开(公告)日：2007-01-04
申请号：US11476868
申请日：2006-06-29
申请人： Yukihiro Sato , Norio Kido , Tatsuhiro Seki , Katsuo Ishizaka , Ichio Shimizu
发明人： Yukihiro Sato , Norio Kido , Tatsuhiro Seki , Katsuo Ishizaka , Ichio Shimizu
IPC分类号： H01L23/495
CPC分类号： H01L23/49575 , H01L23/485 , H01L23/49568 , H01L23/49582 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L2224/04042 , H01L2224/05647 , H01L2224/0603 , H01L2224/2919 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/48647 , H01L2224/48747 , H01L2224/48847 , H01L2224/49171 , H01L2224/73265 , H01L2224/83805 , H01L2224/8385 , H01L2224/85447 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/00011
摘要： A semiconductor device having a plurality of chips is reduced in size. In HSOP(semiconductor device) for driving a three-phase motor, a first semiconductor chip including a pMISFET and a second semiconductor chip including an nMISFET are mounted over each of a first tab, second tab, and third tab. The drains of the PMISFET and nMISFET over each tab are electrically connected with each other. Thus, two of six MISFETs can be placed over each of three tabs divided in correspondence with the number of phases of the motor, and they can be packaged in one in a compact manner. As a result, the size of the HSOP for driving a three-phase motor, having a plurality of chips can be reduced.
摘要翻译：具有多个芯片的半导体器件的尺寸减小。在用于驱动三相电机的HSOP（半导体器件）中，包括pMISFET的第一半导体芯片和包括nMISFET的第二半导体芯片安装在第一突片，第二突片和第三突片的每一个上。每个接头上的PMISFET和nMISFET的漏极彼此电连接。因此，可以将六个MISFET中的两个放置在与电机的相位数相对应地分开的三个接片中的每一个上，并且它们可以以紧凑的方式封装在一个中。结果，可以减少具有多个芯片的用于驱动三相电动机的HSOP的尺寸。

3. 发明授权

US07969000B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07969000B2
公开(公告)日：2011-06-28
申请号：US12706295
申请日：2010-02-16
申请人： Yukihiro Sato , Norio Kido , Tatsuhiro Seki , Katsuo Ishizaka , Ichio Shimizu
发明人： Yukihiro Sato , Norio Kido , Tatsuhiro Seki , Katsuo Ishizaka , Ichio Shimizu
IPC分类号： H01L27/092
CPC分类号： H01L23/49575 , H01L23/485 , H01L23/49568 , H01L23/49582 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L2224/04042 , H01L2224/05647 , H01L2224/0603 , H01L2224/2919 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/48647 , H01L2224/48747 , H01L2224/48847 , H01L2224/49171 , H01L2224/73265 , H01L2224/83805 , H01L2224/8385 , H01L2224/85447 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/00011
摘要： A semiconductor device having a plurality of chips is reduced in size. In HSOP (semiconductor device) for driving a three-phase motor, a first semiconductor chip including a pMISFET and a second semiconductor chip including an nMISFET are mounted over each of a first tab, second tab, and third tab. The drains of the pMISFET and nMISFET over each tab are electrically connected with each other. Thus, two of six MISFETs can be placed over each of three tabs divided in correspondence with the number of phases of the motor, and they can be packaged in one in a compact manner. As a result, the size of the HSOP for driving a three-phase motor, having a plurality of chips can be reduced.
摘要翻译：具有多个芯片的半导体器件的尺寸减小。在用于驱动三相电机的HSOP（半导体器件）中，包括pMISFET的第一半导体芯片和包括nMISFET的第二半导体芯片安装在第一突片，第二突片和第三突片的每一个上。 pMISFET和nMISFET的漏极在每个接片上彼此电连接。因此，可以将六个MISFET中的两个放置在与电机的相位数相对应地分开的三个接片中的每一个上，并且它们可以以紧凑的方式封装在一个中。结果，可以减少具有多个芯片的用于驱动三相电动机的HSOP的尺寸。

4. 发明授权

US07692285B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07692285B2
公开(公告)日：2010-04-06
申请号：US11476868
申请日：2006-06-29
申请人： Yukihiro Sato , Norio Kido , Tatsuhiro Seki , Katsuo Ishizaka , Ichio Shimizu
发明人： Yukihiro Sato , Norio Kido , Tatsuhiro Seki , Katsuo Ishizaka , Ichio Shimizu
IPC分类号： H01L23/495
CPC分类号： H01L23/49575 , H01L23/485 , H01L23/49568 , H01L23/49582 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L2224/04042 , H01L2224/05647 , H01L2224/0603 , H01L2224/2919 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/48647 , H01L2224/48747 , H01L2224/48847 , H01L2224/49171 , H01L2224/73265 , H01L2224/83805 , H01L2224/8385 , H01L2224/85447 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/00011
摘要： A semiconductor device having a plurality of chips is reduced in size. In HSOP (semiconductor device) for driving a three-phase motor, a first semiconductor chip including a pMISFET and a second semiconductor chip including an nMISFET are mounted over each of a first tab, second tab, and third tab. The drains of the pMISFET and nMISFET over each tab are electrically connected with each other. Thus, two of six MISFETs can be placed over each of three tabs divided in correspondence with the number of phases of the motor, and they can be packaged in one in a compact manner. As a result, the size of the HSOP for driving a three-phase motor, having a plurality of chips can be reduced.
摘要翻译：具有多个芯片的半导体器件的尺寸减小。在用于驱动三相电机的HSOP（半导体器件）中，包括pMISFET的第一半导体芯片和包括nMISFET的第二半导体芯片安装在第一突片，第二突片和第三突片的每一个上。 pMISFET和nMISFET的漏极在每个接片上彼此电连接。因此，可以将六个MISFET中的两个放置在与电机的相位数相对应地分开的三个接片中的每一个上，并且它们可以以紧凑的方式封装在一个中。结果，可以减少具有多个芯片的用于驱动三相电动机的HSOP的尺寸。

5. 发明申请

US20130082334A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130082334A1
公开(公告)日：2013-04-04
申请号：US13610935
申请日：2012-09-12
申请人： Hiroyuki NAKAMURA , Yukihiro Sato , Atsushi Fujiki , Tatsuhiro Seki
发明人： Hiroyuki NAKAMURA , Yukihiro Sato , Atsushi Fujiki , Tatsuhiro Seki
IPC分类号： H01L27/088
CPC分类号： H01L27/088 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/73 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49175 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/01015 , H01L2924/01047 , H01L2924/12036 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device is improved in reliability. A switching power MOSFET and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion via a conductive bonding material, and sealed in a resin. Over the main surface of the semiconductor chip, a metal plate is bonded to a source pad electrode of the power MOSFET. In the plan view, the metal plate does not overlap a sense MOSFET region where the sense MOSFET is formed. The metal plate is bonded to the source pad electrode so as to surround three of the sides of the sense MOSFET region.
摘要翻译：提高了半导体器件的可靠性。用于感测在功率MOSFET中流过的电流的开关功率MOSFET和感测MOSFET的面积比功率MOSFET小，形成在一个半导体芯片中。半导体芯片通过导电接合材料安装在芯片安装部分上，并密封在树脂中。在半导体芯片的主表面上，金属板被接合到功率MOSFET的源极焊盘电极。在平面图中，金属板不与形成感测MOSFET的感测MOSFET区域重叠。金属板与源极焊盘电极接合，以便围绕感测MOSFET区域的三个侧面。

6. 发明授权

US08299599B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08299599B2
公开(公告)日：2012-10-30
申请号：US13040234
申请日：2011-03-03
申请人： Hiroyuki Nakamura , Atsushi Fujiki , Tatsuhiro Seki , Nobuya Koike , Yukihiro Sato , Kisho Ashida
发明人： Hiroyuki Nakamura , Atsushi Fujiki , Tatsuhiro Seki , Nobuya Koike , Yukihiro Sato , Kisho Ashida
IPC分类号： H01L23/48 , H01L23/10
CPC分类号： H01L27/07 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L29/66 , H01L2224/02166 , H01L2224/05553 , H01L2224/05554 , H01L2224/0603 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40247 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48137 , H01L2224/48247 , H01L2224/49175 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/01015 , H01L2924/01047 , H01L2924/12036 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： To improve the performance and reliability of semiconductor devices. For the semiconductor chip CP1, power MOSFETs Q1 and Q2 for the switch, a diode DD1 for detecting the heat generation of the power MOSFET Q1, a diode DD2 for detecting the heat generation of the power MOSFET Q2, and plural pad electrodes PD are formed. The power MOSFET Q1 and the diode DD1 are arranged in a first MOSFET region RG1 on the side of a side SD1, and the power MOSFET Q2 and the diode DD2 are arranged in a second MOSFET region RG2 on the side of a side SD2. The diode DD1 is arranged along the side SD1, the diode DD2 is arranged along the side SD2, and all pad electrodes PD other than the pad electrodes PDS1 and PDS2 for the source are arranged along a side SD3 between the diodes DD1 and DD2.
摘要翻译：提高半导体器件的性能和可靠性。对于半导体芯片CP1，用于开关的功率MOSFET Q1和Q2，用于检测功率MOSFET Q1的发热的二极管DD1，用于检测功率MOSFET Q2的发热的二极管DD2和多个焊盘电极PD 。功率MOSFET Q1和二极管DD1布置在侧面SD1侧的第一MOSFET区域RG1中，功率MOSFET Q2和二极管DD2布置在侧面SD2侧的第二MOSFET区RG2中。二极管DD1沿着侧面SD1配置，二极管DD2沿着侧面SD2配置，除了用于源极的焊盘电极PDS1和PDS2以外的所有焊盘电极PD沿着二极管DD1和DD2之间的侧面SD3排列。

7. 发明授权

US08624379B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08624379B2
公开(公告)日：2014-01-07
申请号：US13610935
申请日：2012-09-12
申请人： Hiroyuki Nakamura , Yukihiro Sato , Atsushi Fujiki , Tatsuhiro Seki
发明人： Hiroyuki Nakamura , Yukihiro Sato , Atsushi Fujiki , Tatsuhiro Seki
IPC分类号： H01L23/52
CPC分类号： H01L27/088 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/73 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49175 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/01015 , H01L2924/01047 , H01L2924/12036 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device is improved in reliability. A switching power MOSFET and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion via a conductive bonding material, and sealed in a resin. Over the main surface of the semiconductor chip, a metal plate is bonded to a source pad electrode of the power MOSFET. In the plan view, the metal plate does not overlap a sense MOSFET region where the sense MOSFET is formed. The metal plate is bonded to the source pad electrode so as to surround three of the sides of the sense MOSFET region.
摘要翻译：提高了半导体器件的可靠性。用于感测在功率MOSFET中流过的电流的开关功率MOSFET和感测MOSFET的面积比功率MOSFET小，形成在一个半导体芯片中。半导体芯片通过导电接合材料安装在芯片安装部分上，并密封在树脂中。在半导体芯片的主表面上，金属板被结合到功率MOSFET的源极焊盘电极。在平面图中，金属板不与形成感测MOSFET的感测MOSFET区域重叠。金属板与源极焊盘电极接合，以便围绕感测MOSFET区域的三个侧面。

8. 发明申请

US20120049187A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20120049187A1
公开(公告)日：2012-03-01
申请号：US13219662
申请日：2011-08-27
申请人： Masamitsu HARUYAMA , Tatsuhiro Seki , Daisuke Arai
发明人： Masamitsu HARUYAMA , Tatsuhiro Seki , Daisuke Arai
IPC分类号： H01L27/07
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0638 , H01L29/0692 , H01L29/0696 , H01L29/407 , H01L29/66734 , H01L29/7397 , H01L29/7808 , H01L29/7811 , H01L29/866
摘要： Accompanying the miniaturization of a gate electrode of a trench gate power MOSFET, the curvature of the bottom part of the trench increases, and thereby, electric fields concentrate on the part and deterioration of a gate oxide film (insulating film) occurs. The deterioration of the gate insulating film is more likely to occur when the gate side bias is negative in the case of an N-channel type power MOSFET and when the gate side bias is positive in the case of a P-channel type power MOSFET.The present invention is a semiconductor device including an insulating gate power transistor etc. in a chip, wherein a gate protection element includes a bidirectional Zener diode and the bidirectional Zener diode has a plurality of P-type impurity regions (or a P-type impurity region) having different concentrations so that the withstand voltage with its gate side negatively biased and the withstand voltage with the gate side positively biased are different from each other.
摘要翻译：随着沟槽栅极功率MOSFET的栅电极的小型化，沟槽底部的曲率增加，从而电场集中在该部分上，并且发生栅极氧化膜（绝缘膜）的劣化。当在N沟道型功率MOSFET的情况下栅极侧偏压为负，并且在P沟道型功率MOSFET的情况下栅极侧偏压为正时，更可能发生栅极绝缘膜的劣化。本发明是一种在芯片中包括绝缘栅功率晶体管等的半导体器件，其中栅极保护元件包括双向齐纳二极管，双向齐纳二极管具有多个P型杂质区（或P型杂质区域）具有不同的浓度，使得其栅极侧的耐受电压被负偏置，并且具有正极偏置的栅极侧的耐受电压彼此不同。

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