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1. 发明授权

US08385099B2 Semiconductor memory cell and manufacturing method thereof, and semiconductor memory devices 失效
标题翻译：半导体存储单元及其制造方法以及半导体存储器件
公开(公告)号：US08385099B2
公开(公告)日：2013-02-26
申请号：US13211983
申请日：2011-08-17
申请人： Yukihiro Kaneko , Yoshihisa Kato , Hiroyuki Tanaka
发明人： Yukihiro Kaneko , Yoshihisa Kato , Hiroyuki Tanaka
IPC分类号： G11C11/22
CPC分类号： H01L21/28291 , G11C11/22 , G11C11/223 , H01L27/1159 , H01L29/516 , H01L29/6684 , H01L29/78391
摘要： A semiconductor memory cell includes: a memory element formed by a first field effect transistor having a gate insulating film made of a ferroelectric film; and a select switching element formed by a second field effect transistor having a gate insulating film made of a paraelectric film. The ferroelectric film and the paraelectric film are stacked together with a semiconductor film of a compound semiconductor interposed therebetween. A first gate electrode of the first field effect transistor is formed on a side of the ferroelectric film, and a second gate electrode of the second field effect transistor is formed on a side of the paraelectric film so as to face the first gate electrode. The semiconductor film forms a common channel layer of the first and second field effect transistors.
摘要翻译：半导体存储单元包括：由具有由铁电体膜制成的栅极绝缘膜的第一场效应晶体管形成的存储元件; 以及由具有由顺电膜制成的栅极绝缘膜的第二场效应晶体管形成的选择开关元件。铁电体膜和顺电层与介于其间的化合物半导体的半导体膜层叠。第一场效应晶体管的第一栅电极形成在铁电体膜的一侧，并且第二场效应晶体管的第二栅电极形成在顺电膜的一侧以面对第一栅电极。半导体膜形成第一和第二场效应晶体管的公共沟道层。

2. 发明申请

US20080251816A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20080251816A1
公开(公告)日：2008-10-16
申请号：US12033481
申请日：2008-02-19
申请人： Hiroyuki Tanaka , Yukihiro Kaneko , Yoshihisa Kato
发明人： Hiroyuki Tanaka , Yukihiro Kaneko , Yoshihisa Kato
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/28291 , H01L27/11502 , H01L29/6684 , H01L29/78391
摘要： A semiconductor memory device is composed of a field effect transistor using the interface between a ferroelectric film and a semiconductor film as the channel and including a gate electrode to which a voltage for controlling the polarization state of the ferroelectric film is applied and source/drain electrodes provided on both ends of the channel to detect a current flowing in the channel in accordance with the polarization state. The semiconductor film is made of a material having a spontaneous polarization and the direction of the spontaneous polarization is parallel with the interface between the ferroelectric film and the semiconductor film.
摘要翻译：半导体存储器件由使用铁电体膜和半导体膜之间的界面作为沟道的场效应晶体管构成，并且包括施加用于控制强电介质膜的极化状态的电压的栅电极和源极/漏极设置在通道的两端，以根据偏振状态检测在通道中流动的电流。半导体膜由具有自发极化的材料制成，并且自发极化的方向与铁电体膜和半导体膜之间的界面平行。

3. 发明申请

US20110299318A1 SEMICONDUCTOR MEMORY CELL AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR MEMORY DEVICES 失效
标题翻译：半导体存储器单元及其制造方法和半导体存储器件
公开(公告)号：US20110299318A1
公开(公告)日：2011-12-08
申请号：US13211983
申请日：2011-08-17
申请人： Yukihiro KANEKO , Yoshihisa Kato , Hiroyuki Tanaka
发明人： Yukihiro KANEKO , Yoshihisa Kato , Hiroyuki Tanaka
IPC分类号： G11C11/22 , H01L21/336 , H01L29/78
CPC分类号： H01L21/28291 , G11C11/22 , G11C11/223 , H01L27/1159 , H01L29/516 , H01L29/6684 , H01L29/78391
摘要： A semiconductor memory cell includes: a memory element formed by a first field effect transistor having a gate insulating film made of a ferroelectric film; and a select switching element formed by a second field effect transistor having a gate insulating film made of a paraelectric film. The ferroelectric film and the paraelectric film are stacked together with a semiconductor film of a compound semiconductor interposed therebetween. A first gate electrode of the first field effect transistor is formed on a side of the ferroelectric film, and a second gate electrode of the second field effect transistor is formed on a side of the paraelectric film so as to face the first gate electrode. The semiconductor film forms a common channel layer of the first and second field effect transistors.
摘要翻译：半导体存储单元包括：由具有由铁电体膜制成的栅极绝缘膜的第一场效应晶体管形成的存储元件; 以及由具有由顺电膜制成的栅极绝缘膜的第二场效应晶体管形成的选择开关元件。铁电体膜和顺电层与介于其间的化合物半导体的半导体膜层叠。第一场效应晶体管的第一栅电极形成在铁电体膜的一侧，并且第二场效应晶体管的第二栅电极形成在顺电膜的一侧以面对第一栅电极。半导体膜形成第一和第二场效应晶体管的公共沟道层。

4. 发明授权

US07732847B2 Semiconductor memory device including a semiconductor film made of a material having a spontaneous polarization and method for fabricating the same 失效
标题翻译：包括由具有自发极化的材料制成的半导体膜的半导体存储器件及其制造方法
公开(公告)号：US07732847B2
公开(公告)日：2010-06-08
申请号：US12033481
申请日：2008-02-19
申请人： Hiroyuki Tanaka , Yukihiro Kaneko , Yoshihisa Kato
发明人： Hiroyuki Tanaka , Yukihiro Kaneko , Yoshihisa Kato
IPC分类号： H01L31/113
CPC分类号： H01L21/28291 , H01L27/11502 , H01L29/6684 , H01L29/78391
摘要： A semiconductor memory device is composed of a field effect transistor using the interface between a ferroelectric film and a semiconductor film as the channel and including a gate electrode to which a voltage for controlling the polarization state of the ferroelectric film is applied and source/drain electrodes provided on both ends of the channel to detect a current flowing in the channel in accordance with the polarization state. The semiconductor film is made of a material having a spontaneous polarization and the direction of the spontaneous polarization is parallel with the interface between the ferroelectric film and the semiconductor film.
摘要翻译：半导体存储器件由使用铁电体膜和半导体膜之间的界面作为沟道的场效应晶体管构成，并且包括施加用于控制强电介质膜的极化状态的电压的栅电极和源极/漏极设置在通道的两端，以根据偏振状态检测在通道中流动的电流。半导体膜由具有自发极化的材料制成，并且自发极化的方向与铁电体膜和半导体膜之间的界面平行。

5. 发明授权

US08023309B2 Semiconductor memory device, method for fabricating the same and semiconductor switching device 有权
标题翻译：半导体存储器件及其制造方法以及半导体开关器件
公开(公告)号：US08023309B2
公开(公告)日：2011-09-20
申请号：US12209605
申请日：2008-09-12
申请人： Hiroyuki Tanaka , Yasuhiro Shimada , Yukihiro Kaneko
发明人： Hiroyuki Tanaka , Yasuhiro Shimada , Yukihiro Kaneko
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , H01L27/10 , H01L27/101 , H01L27/11502
摘要： A first electrode is formed on a stacked-layer film, which is formed of a ferroelectric layer and a semiconductor layer, at the ferroelectric layer and a plurality of second electrodes are formed on the stacked-layer film at the semiconductor layer side. Each of parts of the semiconductor layer located in regions in which the second electrodes are formed functions as a resistance modulation element (memory) using the polarization assist effect of the ferroelectric layer. Information (a low resistance state or a high resistance state) held in a memory is read by detecting a value of a current flowing in each part of the semiconductor layer. Information is written in a memory by inverting a polarization of the ferroelectric layer.
摘要翻译：第一电极形成在由铁电体层和强电介质层形成的叠层膜上，在半导体层侧的层叠膜上形成多个第二电极。位于其中形成第二电极的区域中的半导体层的每个部分用作使用强电介质层的极化辅助作用的电阻调制元件（存储器）。通过检测在半导体层的每个部分中流动的电流的值来读取保存在存储器中的信息（低电阻状态或高电阻状态）。通过反转铁电层的极化将信息写入存储器。

6. 发明申请

US20110310650A1 SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF OPERATING THEREOF 有权
标题翻译：半导体存储器件及其操作方法
公开(公告)号：US20110310650A1
公开(公告)日：2011-12-22
申请号：US13222658
申请日：2011-08-31
申请人： Yukihiro KANEKO , Hiroyuki Tanaka , Michihito Ueda
发明人： Yukihiro KANEKO , Hiroyuki Tanaka , Michihito Ueda
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , H01L27/1159 , H01L29/4908 , H01L29/6684 , H01L29/78391 , H01L29/78648
摘要： In the operating method of the semiconductor memory device, (1) voltages V1, V2, Vs, and Vd, which satisfy V1>Vs, V1>Vd, V2>Vs, and V2>Vd, are applied to a first gate electrode, a second gate electrode, a source electrode, and a drain electrode to write a first resistance value, respectively, (2) the voltages V1, V2, Vs, and Vd, which satisfy V1>Vs, V1>Vd, V2
摘要翻译：在半导体存储器件的操作方法中，（1）对第一栅电极施加满足V1> Vs，V1> Vd，V2> Vs，V2> Vd的电压V1，V2，Vs，Vd，分别写入第一电阻值的第二栅电极，源电极和漏电极，（2）满足V1> Vs，V1> Vd，V2

7. 发明申请

US20110299566A1 PYROELECTRIC TEMPERATURE SENSOR AND A METHOD FOR MEASURING A TEMPERATURE WITH THE PYROELECTRIC TEMPERATURE SENSOR 有权
标题翻译：光伏温度传感器和用于测量温度传感器的方法
公开(公告)号：US20110299566A1
公开(公告)日：2011-12-08
申请号：US13207940
申请日：2011-08-11
申请人： Michihito Ueda , Hiroyuki Tanaka , Yukihiro Kaneko , Eiji Fujii
发明人： Michihito Ueda , Hiroyuki Tanaka , Yukihiro Kaneko , Eiji Fujii
IPC分类号： G01K7/36
CPC分类号： H01L37/02 , G01K7/36
摘要： A temperature sensor includes first and second lower electrodes, a ferroelectric layer having polarization, a semiconductor layer; and first to third upper electrodes. The second upper electrode is interposed between the first upper electrode and the third upper electrode in a plan view. The semiconductor layer includes a first channel disposed between the first upper electrode and the second upper electrode, and a second channel disposed between the second upper electrode and the third upper electrode. The ferroelectric layer includes a first ferroelectric part disposed below the first channel and a second ferroelectric part disposed below the second channel. A polarization direction of the first ferroelectric part is opposite to a polarization direction of the second first ferroelectric part. The temperature is calculated based on the output voltage from the second upper electrode and the voltage applied to the first upper electrode.
摘要翻译：温度传感器包括第一和第二下部电极，具有极化的铁电体层，半导体层; 和第一至第三上电极。第二上电极在平面图中插入在第一上电极和第三上电极之间。半导体层包括设置在第一上电极和第二上电极之间的第一通道和设置在第二上电极和第三上电极之间的第二通道。铁电层包括设置在第一通道下方的第一铁电体部分和设置在第二通道下方的第二铁电体部分。第一铁电体部的偏振方向与第二第一强电介质部的偏振方向相反。基于来自第二上电极的输出电压和施加到第一上电极的电压来计算温度。

8. 发明授权

US08228708B2 Semiconductor memory device and a method of operating thereof 有权
标题翻译：半导体存储器件及其操作方法
公开(公告)号：US08228708B2
公开(公告)日：2012-07-24
申请号：US13222658
申请日：2011-08-31
申请人： Yukihiro Kaneko , Hiroyuki Tanaka , Michihito Ueda
发明人： Yukihiro Kaneko , Hiroyuki Tanaka , Michihito Ueda
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , H01L27/1159 , H01L29/4908 , H01L29/6684 , H01L29/78391 , H01L29/78648
摘要： In the operating method of the semiconductor memory device, (1) voltages V1, V2, Vs, and Vd, which satisfy V1>Vs, V1>Vd, V2>Vs, and V2>Vd, are applied to a first gate electrode, a second gate electrode, a source electrode, and a drain electrode to write a first resistance value, respectively, (2) the voltages V1, V2, Vs, and Vd, which satisfy V1>Vs, V1>Vd, V2
摘要翻译：在半导体存储器件的操作方法中，（1）对第一栅电极施加满足V1> Vs，V1> Vd，V2> Vs，V2> Vd的电压V1，V2，Vs，Vd，分别写入第一电阻值的第二栅电极，源电极和漏电极，（2）满足V1> Vs，V1> Vd，V2

9. 发明授权

US08414187B2 Pyroelectric temperature sensor and a method for measuring a temperature with the pyroelectric temperature sensor 有权
标题翻译：热电温度传感器和用热电温度传感器测量温度的方法
公开(公告)号：US08414187B2
公开(公告)日：2013-04-09
申请号：US13207940
申请日：2011-08-11
申请人： Michihito Ueda , Hiroyuki Tanaka , Yukihiro Kaneko , Eiji Fujii
发明人： Michihito Ueda , Hiroyuki Tanaka , Yukihiro Kaneko , Eiji Fujii
IPC分类号： G01K7/01 , G01J5/00
CPC分类号： H01L37/02 , G01K7/36
摘要： A temperature sensor includes first and second lower electrodes, a ferroelectric layer having polarization, a semiconductor layer; and first to third upper electrodes. The second upper electrode is interposed between the first upper electrode and the third upper electrode in a plan view. The semiconductor layer includes a first channel disposed between the first upper electrode and the second upper electrode, and a second channel disposed between the second upper electrode and the third upper electrode. The ferroelectric layer includes a first ferroelectric part disposed below the first channel and a second ferroelectric part disposed below the second channel. A polarization direction of the first ferroelectric part is opposite to a polarization direction of the second first ferroelectric part. The temperature is calculated based on the output voltage from the second upper electrode and the voltage applied to the first upper electrode.
摘要翻译：温度传感器包括第一和第二下部电极，具有极化的铁电体层，半导体层; 和第一至第三上电极。第二上电极在平面图中插入在第一上电极和第三上电极之间。半导体层包括设置在第一上电极和第二上电极之间的第一通道和设置在第二上电极和第三上电极之间的第二通道。铁电层包括设置在第一通道下方的第一铁电体部分和设置在第二通道下方的第二铁电体部分。第一铁电体部的偏振方向与第二第一强电介质部的偏振方向相反。基于来自第二上电极的输出电压和施加到第一上电极的电压来计算温度。

10. 发明申请

US20180004713A1 ELECTRONIC FILE GENERATION APPARATUS, ELECTRONIC FILE GENERATION METHOD, NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM FOR STORING SETTING REGIONS AND ELECTRONIC DOCUMENTS. 审中-公开
公开(公告)号：US20180004713A1
公开(公告)日：2018-01-04
申请号：US15669937
申请日：2017-08-06
申请人： Hiroyuki Tanaka
发明人： Hiroyuki Tanaka
IPC分类号： G06F17/22 , G06F17/24 , G06F17/21
CPC分类号： G06F17/2235 , G06F17/212 , G06F17/24
摘要： The electronic file generation apparatus according to the present invention is configured to set up hyperlinks and anchors in setting regions so as to have the same lower level segments of names, and then to change the setting regions in such a manner so as to execute one-round replacements of only higher level segments of names of the anchors and the hyperlinks in different electronic files. During the process of one-round replacements, the lower level segments of names are copied onto, the lower level segments of names of another file. Finally, the anchors and the hyperlinks in different setting region coincide with each other only by simply combining/coupling a plurality of electronic files into one file. Thereby allowing users to make verbatim cross-references among different contents.

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