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    • 3. 发明授权
    • Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
    • 用于晶片等的层厚度检测方法和装置以及包括其的研磨装置
    • US07052920B2
    • 2006-05-30
    • US09881445
    • 2001-06-13
    • Yoshijiro UshioTakehiko Ueda
    • Yoshijiro UshioTakehiko Ueda
    • G01R31/26
    • B24B37/013B24B49/04B24B49/12G01B11/0683H01L22/12H01L22/26H01L2924/0002H01L2924/00
    • Methods and apparatus are disclosed for detecting a thickness of a surficial layer (e.g., metal or insulating layer) on a workpiece (e.g., semiconductor wafer) during a process for planarizing the layer, so as to stop the process when a suitable process endpoint is reached. Layer thickness is detected based on a spectral-characteristic signal of reflected or transmitted signal light, obtained by directing a probe light onto the surface of the workpiece. Example spectral characteristics are local maxima and minima of signal-light waveform, differences or quotients of the same, a dispersion of the signal-light waveform, a component of a Fourier transform of the signal waveform, a cross-correlation function of the signal waveform. Alternatively, the zeroth order of signal light is selected for measurement, or a spatial coherence length of the probe light is compared with the degree of fineness of the pattern on the surface illuminated with the probe light. An optical model can be determined based on the comparison, and at least one of the layer thickness and the process endpoint is detected by comparing the measured signal-light intensity with the calculated theoretical signal light intensity.
    • 公开了用于在平坦化层的过程期间检测工件(例如,半导体晶片)上的表面层(例如,金属或绝缘层)的厚度的方法和装置,以便当合适的过程端点为 到达。 基于通过将探测光引导到工件的表面而获得的反射或透射信号光的光谱特征信号来检测层厚度。 示例光谱特征是信号光波形的局部最大值和最小值,差值或商数,信号光波形的色散,信号波形的傅立叶变换的分量,信号波形的互相关函数 。 或者,选择信号光的零级顺序进行测量,或者将探测光的空间相干长度与用探测光照射的表面上的图案的细度的程度进行比较。 可以基于比较来确定光学模型,并且通过将测量的信号光强度与计算的理论信号光强度进行比较来检测层厚度和过程终点中的至少一个。
    • 4. 发明授权
    • Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
    • 用于晶片等的层厚度检测方法和装置以及包括其的研磨装置
    • US06670200B2
    • 2003-12-30
    • US09881224
    • 2001-06-13
    • Yoshijiro UshioTakehiko Ueda
    • Yoshijiro UshioTakehiko Ueda
    • H01L2100
    • B24B37/013B24B49/04B24B49/12G01B11/0683H01L22/12H01L22/26H01L2924/0002H01L2924/00
    • Methods and apparatus are disclosed for detecting a thickness of a surficial layer (e.g., metal or insulating layer) on a workpiece (e.g., semiconductor wafer) during a process for planarizing the layer, so as to stop the process when a suitable process endpoint is reached. Layer thickness is detected based on a spectral-characteristic signal of reflected or transmitted signal light, obtained by directing a probe light onto the surface of the workpiece. Example spectral characteristics are local maxima and minima of signal-light waveform, differences or quotients of the same, a dispersion of the signal-light waveform, a component of a Fourier transform of the signal waveform, a cross-correlation function of the signal waveform. Alternatively, the zeroth order of signal light is selected for measurement, or a spatial coherence length of the probe light is compared with the degree of fineness of the pattern on the surface illuminated with the probe light. An optical model can be determined based on the comparison, and at least one of the layer thickness and the process endpoint is detected by comparing the measured signal-light intensity with the calculated theoretical signal-light intensity.
    • 公开了用于在平坦化层的过程期间检测工件(例如,半导体晶片)上的表面层(例如,金属或绝缘层)的厚度的方法和装置,以便当合适的过程端点为 到达。 基于通过将探测光引导到工件的表面而获得的反射或透射信号光的光谱特征信号来检测层厚度。 示例光谱特征是信号光波形的局部最大值和最小值,差值或商数,信号光波形的色散,信号波形的傅立叶变换的分量,信号波形的互相关函数 。 或者,选择信号光的零级顺序进行测量,或者将探测光的空间相干长度与用探测光照射的表面上的图案的细度的程度进行比较。 可以基于比较来确定光学模型,并且通过将测量的信号光强度与计算的理论信号光强度进行比较来检测层厚度和处理终点中的至少一个。
    • 5. 发明授权
    • Apparatus and methods for detecting thickness of a patterned layer
    • 用于检测图案层的厚度的装置和方法
    • US06489624B1
    • 2002-12-03
    • US09119162
    • 1998-07-20
    • Yoshijiro UshioTakehiko UedaEiji MatsukawaMotoo Koyama
    • Yoshijiro UshioTakehiko UedaEiji MatsukawaMotoo Koyama
    • G01N2186
    • G01B11/0683
    • Apparatus and methods are disclosed that measure the thickness of a layer on a workpiece such as a semiconductor wafer, especially as the layer is undergoing a process such as polishing to achieve planarization of the layer. The apparatus comprises a probe light optical system that directs a beam of probe light to be incident on a surface of the layer, and produce a signal light from reflection of the probe light from or transmission of the probe light through the layer. A light detector retrieves and detects sufficient wavelengths of the signal light to produce a corresponding electronic signal encoding data regarding the intensity at various wavelengths of the signal light. At least one of the following is monitored: appearance or disappearance of maxima or minima in a spectrum of intensity or transmittance of the signal light, a change in wavelength at which a maximum or minimum is located in the spectrum, and change in intensity at a particular wavelength at which a maximum or minimum is located in the spectrum. The apparatus can be included with a polishing apparatus.
    • 公开了测量诸如半导体晶片的工件上的层的厚度的装置和方法,特别是当该层经历诸如抛光的工艺以实现该层的平坦化时。 该装置包括探针光学系统,其将探测光束引导入入层的表面,并产生来自探测光的反射的信号光或探测光透过该层的透射。 光检测器检索并检测信号光的足够的波长,以产生相应的电子信号,该信号编码关于信号光的各种波长的强度的数据。 监视以下中的至少一个:信号光的强度或透射光谱中的最大值或最小值的出现或消失,最大或最小位于光谱中的波长变化,以及在 最大或最小位于光谱中的特定波长。 该装置可以包括在抛光装置中。
    • 8. 发明授权
    • Method and device for simulation, method and device for polishing, method and device for preparing control parameters or control program, polishing system, recording medium, and method of manufacturing semiconductor device
    • 用于抛光的方法和装置,用于抛光的方法和装置,用于制备控制参数或控制程序的方法和装置,抛光系统,记录介质以及制造半导体装置的方法
    • US07108580B2
    • 2006-09-19
    • US10774623
    • 2004-02-10
    • Yoshijiro UshioKiyoshi Iizuka
    • Yoshijiro UshioKiyoshi Iizuka
    • B24B51/00
    • B24B51/00B24B57/02
    • The preparation apparatus 4 determines the target distribution of the amount of polishing on the basis of the film thickness of the wafer 2 measured by the measuring apparatus 3. The preparation apparatus 4 assumes a control program for the purpose of controlling the polishing apparatus 1, and predicts the distribution of the amount of polishing that is obtained after the wafer 2 is polished by the polishing apparatus 1 in accordance with the assumed control program. In this case, the amount of polishing in individual partial regions of the polished surface of the wafer 2 is predicted using an indicator that indicates the height distribution of the polishing surface of the polishing pad 14 (when no pressure is applied to this polishing pad) as one parameter. The preparation apparatus 4 judges the acceptability of the assumed control program by comparing the predicted distribution of the amount of polishing and the target distribution of the amount of polishing. The polishing apparatus 1 polishes the wafer 2 in accordance with a control program that has been judged to be acceptable. As a result, the desired film thickness distribution on the side of the polished surface of the object of polishing can be simulated with good precision.
    • 制备装置4基于由测量装置3测量的晶片2的膜厚确定抛光量的目标分布。 制备装置4采用用于控制抛光装置1的控制程序,并且根据假设的控制程序预测抛光装置1抛光晶片2后获得的抛光量的分布。 在这种情况下,使用表示研磨垫14的研磨面的高度分布的指示器(当对该研磨垫没有施加压力时)来预测晶片2的研磨面的各个部分区域的研磨量, 作为一个参数。 准备装置4通过比较抛光量的预测分布和抛光量的目标分布来判断假设控制程序的可接受性。 抛光装置1根据已被判定为可接受的控制程序对晶片2进行抛光。 结果,可以以高精度模拟抛光对象抛光表面一侧所需的膜厚分布。
    • 9. 发明授权
    • Method and apparatus for monitoring polishing state, polishing device, process wafer, semiconductor device, and method of manufacturing semiconductor device
    • 用于监测抛光状态的方法和装置,抛光装置,工艺晶片,半导体器件以及制造半导体器件的方法
    • US06679756B2
    • 2004-01-20
    • US09914361
    • 2001-08-27
    • Akira IshikawaYoshijiro Ushio
    • Akira IshikawaYoshijiro Ushio
    • B24B4900
    • B24B37/013B24B49/12G01B11/06H01L21/30625H01L21/67253
    • Prior to the polishing of the wafer, a reflective body which has the same shape and dimensions as the wafer is held on the polishing head instead of the wafer. A polishing agent is interposed between the window of the polishing head and the reflective body, and the reflective body is pressed against the polishing pad with the same pressure as that applied during the polishing of the wafer. In this state, the reflective body is irradiated via the window with a probe light emitted from the light source, and the spectroscopic intensity of the reflected light is obtained from the sensor as a reference spectrum. During the polishing of the wafer, the spectroscopic intensity of the reflected light from the wafer is successively obtained as measured spectra from sensor; the intensity ratio of these measured spectra to the above-mentioned reference spectrum is determined, and the polishing state of the wafer is monitored on the basis of this intensity ratio.
    • 在抛光晶片之前,具有与晶片相同的形状和尺寸的反射体被保持在抛光头而不是晶片上。 抛光剂插入在抛光头的窗口和反射体之间,并且反射体以与在晶片抛光期间施加的压力相同的压力压在抛光垫上。 在该状态下,利用从光源射出的探测光经由窗口对反射体进行照射,从传感器得到反射光的分光强度作为参照光谱。 在晶片的研磨过程中,从传感器测得的光谱依次获得来自晶片的反射光的光谱强度; 确定这些测量光谱与上述参考光谱的强度比,并且基于该强度比来监测晶片的抛光状态。