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    • 3. 发明授权
    • Charging system, processor and feeder
    • 充电系统,处理器和馈线
    • US08324866B2
    • 2012-12-04
    • US12767444
    • 2010-04-26
    • Satoshi KazamaYoshiyasu NakashimaIsamu YamadaYuki Tamura
    • Satoshi KazamaYoshiyasu NakashimaIsamu YamadaYuki Tamura
    • H02J7/00H02J7/16
    • G06F1/26H01M10/441H01M10/482H02J7/0004
    • A charging system including: a processor that includes a containing part for selectively containing either one of a secondary battery of a first type and a secondary battery of a second type capable of being rapidly charged with an electrical quantity greater than that of the secondary battery of the first type, and that carries out processing using, as a power source, the secondary battery contained in the containing part; and a feeder for feeding power to the processor so as to charge the secondary battery, wherein the processor includes: a determination part for determining whether or not the contained secondary battery needs to be charged; a battery detection part for detecting the type of the contained secondary battery when it is determined that the secondary battery needs to be charged; and a transmission part for transmitting, to the feeder, a feed instruction.
    • 一种充电系统,包括:处理器,其包括容纳部件,用于选择性地容纳第一类型的二次电池和第二类型的二次电池中的任一种,其能够被快速充电,所述电量大于所述二次电池的电量 第一类型,并且执行使用包含在容纳部分中的二次电池作为电源的处理; 以及馈电器,用于向处理器供电以对二次电池充电,其中处理器包括:确定部分,用于确定所包含的二次电池是否需要充电; 电池检测部件,用于当确定二次电池需要充电时,检测所容纳的二次电池的类型; 以及用于将馈送指令发送到馈线的发送部分。
    • 5. 发明申请
    • CHARGING SYSTEM, PROCESSOR AND FEEDER
    • 充电系统,处理器和馈线
    • US20100201306A1
    • 2010-08-12
    • US12767444
    • 2010-04-26
    • Satoshi KazamaYoshiyasu NakashimaIsamu YamadaYuki Tamura
    • Satoshi KazamaYoshiyasu NakashimaIsamu YamadaYuki Tamura
    • H02J7/04
    • G06F1/26H01M10/441H01M10/482H02J7/0004
    • A charging system including: a processor that includes a containing part for selectively containing either one of a secondary battery of a first type and a secondary battery of a second type capable of being rapidly charged with an electrical quantity greater than that of the secondary battery of the first type, and that carries out processing using, as a power source, the secondary battery contained in the containing part; and a feeder for feeding power to the processor so as to charge the secondary battery, wherein the processor includes: a determination part for determining whether or not the contained secondary battery needs to be charged; a battery detection part for detecting the type of the contained secondary battery when it is determined that the secondary battery needs to be charged; and a transmission part for transmitting, to the feeder, a feed instruction.
    • 一种充电系统,包括:处理器,其包括容纳部件,用于选择性地容纳第一类型的二次电池和第二类型的二次电池中的任一种,其能够被快速充电,所述电量大于所述二次电池的电量 第一类型,并且执行使用包含在容纳部分中的二次电池作为电源的处理; 以及馈电器,用于向处理器供电以对二次电池充电,其中处理器包括:确定部分,用于确定所包含的二次电池是否需要充电; 电池检测部件,用于当确定二次电池需要充电时,检测所容纳的二次电池的类型; 以及用于将馈送指令发送到馈线的发送部分。
    • 8. 发明申请
    • Charging circuit and method, electronic device, and power supply unit
    • 充电电路和方法,电子设备和电源单元
    • US20110279078A1
    • 2011-11-17
    • US13067161
    • 2011-05-12
    • Yasushi HaraYuki TamuraKoichi Hiramoto
    • Yasushi HaraYuki TamuraKoichi Hiramoto
    • H02J7/04H02J7/00
    • H02J7/027H02J7/085
    • A charging circuit configured to charge a rechargeable battery includes an input unit configured to support forms of connection to an external power supply and to receive electric power supplied from the external power supply; a charge unit configured to supply the rechargeable battery with the electric power supplied from the input unit; a detection unit configured to detect the charge level of the rechargeable battery; and a charge control unit configured to control the charge unit so as to prevent the rechargeable battery from being supplied with the electric power supplied from the input unit supplied with the electric power from the external power supply through one of the forms of connection to the external power supply, in response to the charge level detected by the detection unit exceeding a threshold corresponding to the one of the forms of connection.
    • 配置为对可再充电电池充电的充电电路包括:输入单元,被配置为支持与外部电源的连接形式,并接收从外部电源供应的电力; 充电单元,被配置为向可再充电电池提供从输入单元提供的电力; 检测单元,被配置为检测可再充电电池的充电电平; 以及充电控制单元,其被配置为控制所述充电单元,以便防止从所述外部电源提供来自所述输入单元的所述输入单元提供的电力被提供给通过所述外部形式的连接形式之一的所述可再充电电池 响应于由检测单元检测到的充电水平超过与连接形式之一相对应的阈值的电源。
    • 9. 发明授权
    • Method for control of Si concentration in gallium phosphide single
crystal layer by liquid phase epitaxial growth technique
    • 通过液相外延生长技术控制磷化镓单晶层中Si浓度的方法
    • US5500390A
    • 1996-03-19
    • US457184
    • 1995-06-01
    • Munehisa YanagisawaYuki TamuraNorihide Kokubu
    • Munehisa YanagisawaYuki TamuraNorihide Kokubu
    • G01N21/64C30B19/04C30B19/10C30B29/44H01L21/208H01L33/30
    • C30B19/04C30B29/44
    • A method for controlling the Si concentration in a GaP single crystal layer grown in a series of runs of GaP liquid phase epitaxial growth with the repeated use of one and the same Ga solution, which comprise the steps of: measuring the Si concentrations of the GaP single crystal layers in preceding runs; then determining the additional Si amounts to be added into the Ga solution to refresh the Si effective concentration therein in reference to the Si concentrations in the layers; and adding Si of the thus determined amount into the Ga solution to commence the subsequent run, wherein the Si concentration in each of the GaP liquid phase epitaxial growth layers is determined from measurement of the O/G ratio in the layer, which is computed from each pair of the both values of the photoluminescent spectral peak intensity around the wavelength of 6300 .ANG. (O component) as the numerator and the other photoluminescent spectral peak intensity around the wavelength of 5540 .ANG. (G component) as the denominator in the photoluminescence spectrum obtained by illuminating the GaP liquid phase epitaxial growth layer with a laser beam at room temperature, with the help of good correlation therebetween.
    • 一种用于控制在一系列GaP液相外延生长中生长的GaP单晶层中的Si浓度的方法,其重复使用一种相同的Ga溶液,其包括以下步骤:测量GaP的Si浓度 上一次运行中的单晶层; 然后根据层中的Si浓度确定添加到Ga溶液中的额外Si量以刷新其中的Si有效浓度; 并将如此确定的量的Si添加到Ga溶液中以开始随后的运行,其中每个GaP液相外延生长层中的Si浓度通过从层中的O / G比的测量确定,其从 作为分子的波长为6300附近(O分量)的光致发光光谱峰强度的两个值和作为光致发光光谱中的分母的5540 ANGSTROM(G成分)周围的其他光致发光光谱峰值强度的每一对 通过在室温下用激光束照射GaP液相外延生长层,借助于它们之间的良好相关性。