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1. 发明申请

US20100283083A1 Normally-off field effect transistor using III-nitride semiconductor and method for manufacturing such transistor 有权
标题翻译：使用III族氮化物半导体的正常场效应晶体管及其制造方法
公开(公告)号：US20100283083A1
公开(公告)日：2010-11-11
申请号：US12308401
申请日：2007-06-14
申请人： Yuki Niiyama , Shinya Ootomo , Tatsuyuki Shinagawa , Takehiko Nomura , Seikoh Yoshida , Hiroshi Kambayashi
发明人： Yuki Niiyama , Shinya Ootomo , Tatsuyuki Shinagawa , Takehiko Nomura , Seikoh Yoshida , Hiroshi Kambayashi
IPC分类号： H01L29/78 , H01L21/66
CPC分类号： H01L29/7802 , H01L29/0657 , H01L29/0847 , H01L29/0886 , H01L29/2003 , H01L29/267 , H01L29/41741 , H01L29/41766 , H01L29/42356 , H01L29/66606 , H01L29/66659 , H01L29/78 , H01L29/7813 , H01L29/7835
摘要： Provided is a normally-off field effect transistor using a III-nitride semiconductor. The transistor is provided with a III-nitride semiconductor layer grown on a substrate by including an acceptor and a donor; a gate insulating film which is formed on the III-nitride semiconductor layer to have a thickness to be at a prescribed threshold voltage based on the concentration of the acceptor and that of the donor; a gate electrode formed on the gate insulating film; a first source/drain electrode formed on the III-nitride semiconductor layer to one side of and separate from the gate electrode, directly or via a high dopant concentration region; and a second source/drain electrode formed away from the gate electrode and the first source/drain electrode, on or under the III-nitride semiconductor layer, directly or via a high dopant concentration region.
摘要翻译：提供了使用III族氮化物半导体的常关场效应晶体管。晶体管设置有通过包括受体和供体在衬底上生长的III族氮化物半导体层; 基于所述受主的浓度和所述供体的浓度，形成在所述III族氮化物半导体层上的厚度为规定阈值电压的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; 在III族氮化物半导体层上直接或经由高掺杂剂浓度区域形成在栅电极的一侧并与栅电极分离的第一源/漏电极; 以及在III族氮化物半导体层上或下方形成为远离栅电极和第一源/漏电极的第二源/漏电极，直接或经由高掺杂剂浓度区域。

2. 发明授权

US08093626B2 Normally-off field effect transistor using III-nitride semiconductor and method for manufacturing such transistor 有权
标题翻译：使用III族氮化物半导体的正常场效应晶体管及其制造方法
公开(公告)号：US08093626B2
公开(公告)日：2012-01-10
申请号：US12308401
申请日：2007-06-14
申请人： Yuki Niiyama , Shinya Ootomo , Tatsuyuki Shinagawa , Takehiko Nomura , Seikoh Yoshida , Hiroshi Kambayashi
发明人： Yuki Niiyama , Shinya Ootomo , Tatsuyuki Shinagawa , Takehiko Nomura , Seikoh Yoshida , Hiroshi Kambayashi
IPC分类号： H01L29/78 , H01L21/66
CPC分类号： H01L29/7802 , H01L29/0657 , H01L29/0847 , H01L29/0886 , H01L29/2003 , H01L29/267 , H01L29/41741 , H01L29/41766 , H01L29/42356 , H01L29/66606 , H01L29/66659 , H01L29/78 , H01L29/7813 , H01L29/7835
摘要： Provided is a normally-off field effect transistor using a III-nitride semiconductor. The transistor is provided with a III-nitride semiconductor layer grown on a substrate by including an acceptor and a donor; a gate insulating film which is formed on the III-nitride semiconductor layer to have a thickness to be at a prescribed threshold voltage based on the concentration of the acceptor and that of the donor; a gate electrode formed on the gate insulating film; a first source/drain electrode formed on the III-nitride semiconductor layer to one side of and separate from the gate electrode, directly or via a high dopant concentration region; and a second source/drain electrode formed away from the gate electrode and the first source/drain electrode, on or under the III-nitride semiconductor layer, directly or via a high dopant concentration region.
摘要翻译：提供了使用III族氮化物半导体的常关场效应晶体管。晶体管设置有通过包括受体和供体在衬底上生长的III族氮化物半导体层; 基于所述受主的浓度和所述供体的浓度，形成在所述III族氮化物半导体层上的厚度为规定阈值电压的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; 在III族氮化物半导体层上直接或经由高掺杂剂浓度区域形成在栅电极的一侧并与栅电极分离的第一源/漏电极; 以及在III族氮化物半导体层上或下方形成为远离栅电极和第一源/漏电极的第二源/漏电极，直接或经由高掺杂剂浓度区域。

3. 发明申请

US20090242938A1 Field effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US20090242938A1
公开(公告)日：2009-10-01
申请号：US12382941
申请日：2009-03-26
申请人： Yuki Niiyama , Seikoh Yoshida , Masatoshi Ikada , Hiroshi Kambayashi , Takahiko Nomura , Masayuki Iwami , Shinya Ootomo
发明人： Yuki Niiyama , Seikoh Yoshida , Masatoshi Ikada , Hiroshi Kambayashi , Takahiko Nomura , Masayuki Iwami , Shinya Ootomo
IPC分类号： H01L29/778
CPC分类号： H01L29/2003 , H01L29/0843 , H01L29/42368 , H01L29/7786
摘要： A field effect transistor formed of a semiconductor of a III group nitride compound, includes an electron running layer formed on a substrate and formed of GaN; an electron supplying layer formed on the electron running layer and formed of AlxGal-xN (0.01≦x≦0.4), the electron supplying layer having a band gap energy different from that of the electron running layer and being separated with a recess region having a depth reaching the electron running layer; a source electrode and a drain electrode formed on the electron supplying layer with the recess region in between; a gate insulating film layer formed on the electron supplying layer for covering a surface of the electron running layer in the recess region; and a gate electrode formed on the gate insulating film layer in the recess region. The electron supplying layer has a layer thickness between 5.5 nm and 40 nm.
摘要翻译：由III族氮化物化合物的半导体形成的场效应晶体管包括形成在衬底上并由GaN形成的电子运行层; 形成在电子运行层上并由Al x Ga 1-x N（0.01 <= x <= 0.4）形成的电子供给层，电子供给层具有与电子运行层的能隙不同的带隙能量，并且与凹陷区域分离具有深度到达电子运行层的深度; 形成在电子供给层上的源电极和漏电极，其间具有凹陷区域; 在所述电子供给层上形成的用于覆盖所述凹部的电子运行层的表面的栅极绝缘膜层; 以及形成在所述凹部区域中的所述栅极绝缘膜层上的栅电极。电子供给层的层厚在5.5nm至40nm之间。

4. 发明授权

US08072002B2 Field effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US08072002B2
公开(公告)日：2011-12-06
申请号：US12382941
申请日：2009-03-26
申请人： Yuki Niyama , Seikoh Yoshida , Hiroshi Kambayashi , Takehiko Nomura , Masayuki Iwami , Shinya Ootomo
发明人： Yuki Niyama , Seikoh Yoshida , Hiroshi Kambayashi , Takehiko Nomura , Masayuki Iwami , Shinya Ootomo
IPC分类号： H01L29/66
CPC分类号： H01L29/2003 , H01L29/0843 , H01L29/42368 , H01L29/7786
摘要： A field effect transistor formed of a semiconductor of a III group nitride compound, includes an electron running layer formed on a substrate and formed of GaN; an electron supplying layer formed on the electron running layer and formed of AlxGa1-xN (0.01≦x≦0.4), the electron supplying layer having a band gap energy different from that of the electron running layer and being separated with a recess region having a depth reaching the electron running layer; a source electrode and a drain electrode formed on the electron supplying layer with the recess region in between; a gate insulating film layer formed on the electron supplying layer for covering a surface of the electron running layer in the recess region; and a gate electrode formed on the gate insulating film layer in the recess region. The electron supplying layer has a layer thickness between 5.5 nm and 40 nm.
摘要翻译：由III族氮化物化合物的半导体形成的场效应晶体管包括形成在衬底上并由GaN形成的电子运行层; 电子供给层，形成在电子运行层上，由Al x Ga 1-x N（0.01＆nlE; x＆nlE; 0.4）形成，电子供给层的带隙能量与电子运行层的能隙不同，并且与具有达到电子运行层的深度; 形成在电子供给层上的源电极和漏电极，其间具有凹陷区域; 在所述电子供给层上形成的用于覆盖所述凹部的电子运行层的表面的栅极绝缘膜层; 以及形成在所述凹部区域中的所述栅极绝缘膜层上的栅电极。电子供给层的层厚在5.5nm至40nm之间。

5. 发明授权

US07679104B2 Vertical type semiconductor device and manufacturing method of the device 有权
标题翻译：垂直型半导体器件及其制造方法
公开(公告)号：US07679104B2
公开(公告)日：2010-03-16
申请号：US11937090
申请日：2007-11-08
申请人： Yoshihiro Sato , Sadahiro Kato , Masayuki Iwami , Hitoshi Sasaki , Shinya Ootomo , Yuki Niiyama
发明人： Yoshihiro Sato , Sadahiro Kato , Masayuki Iwami , Hitoshi Sasaki , Shinya Ootomo , Yuki Niiyama
IPC分类号： H01L29/267
CPC分类号： H01L29/267 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/76895 , H01L29/0657 , H01L29/2003 , H01L29/41 , H01L29/417 , H01L29/41766 , H01L29/66143 , H01L29/66727 , H01L29/66734 , H01L29/7813 , H01L29/872
摘要： A vertical semiconductor element comprises: an electro-conductive substrate; a GaN layer, as a nitride compound semiconductor layer, which is selectively grown as a convex shape on one surface of the electro-conductive substrate through a buffer layer; a source electrode as a first electrode formed on the GaN layer; and a drain electrode as a second electrode formed on another surface of the electro-conductive substrate.
摘要翻译：垂直半导体元件包括：导电基板; 作为氮化物半导体层的GaN层，其通过缓冲层在导电性基板的一个表面上选择性地生长为凸形; 源极，形成在GaN层上的第一电极; 以及作为形成在导电基板的另一表面上的第二电极的漏电极。

6. 发明申请

US20080142837A1 VERTICAL TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE DEVICE 有权
标题翻译：垂直型半导体器件及器件的制造方法
公开(公告)号：US20080142837A1
公开(公告)日：2008-06-19
申请号：US11937090
申请日：2007-11-08
申请人： Yoshihiro Sato , Sadahiro Kato , Masayuki Iwami , Hitoshi Sasaki , Shinya Ootomo , Yuki Niiyama
发明人： Yoshihiro Sato , Sadahiro Kato , Masayuki Iwami , Hitoshi Sasaki , Shinya Ootomo , Yuki Niiyama
IPC分类号： H01L29/267 , H01L21/205
CPC分类号： H01L29/267 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/76895 , H01L29/0657 , H01L29/2003 , H01L29/41 , H01L29/417 , H01L29/41766 , H01L29/66143 , H01L29/66727 , H01L29/66734 , H01L29/7813 , H01L29/872
摘要： A vertical semiconductor element comprises: an electro-conductive substrate 1; a GaN layer 3, as a nitride compound semiconductor layer, which is selectively grown as convex shape on an one surface of the electro-conductive substrate 1 through a buffer layer 9; a source electrode 25 as a first electrode formed on the GaN layer 3; and a drain electrode 29 as a second electrode formed on another surface of the electro-conductive substrate 1.
摘要翻译：垂直半导体元件包括：导电基板1; 作为氮化物半导体层的GaN层3，其通过缓冲层9在导电性基板1的一个表面上选择性地生长为凸形; 作为形成在GaN层3上的第一电极的源电极25; 以及作为形成在导电基板1的另一个表面上的第二电极的漏电极29。

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