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    • 3. 发明申请
    • STATIC RANDOM ACCESS MEMORY
    • 静态随机存取存储器
    • US20100290269A1
    • 2010-11-18
    • US12782611
    • 2010-05-18
    • Yuki FUJIMURA
    • Yuki FUJIMURA
    • G11C11/00
    • G11C11/419
    • Included are a memory cell, a first metal interconnection, a variable capacitance circuit and a connection switch. The memory cell includes cross-coupled first and second inverters which are connected to a power supply node. The first metal interconnection is connected to the power supply node. The variable capacitance circuit includes: second and third metal interconnections electrically connected to a connection node; and a controller capable of controlling electrical connection between the third metal interconnection and the connection node. The connection switch is connected between the first metal interconnection and the connection node of the variable capacitance circuit. The connection switch is configured to electrically connect the first metal interconnection and the connection node in a write operation of the memory cell.
    • 包括存储单元,第一金属互连,可变电容电路和连接开关。 存储单元包括连接到电源节点的交叉耦合的第一和第二反相器。 第一金属互连连接到电源节点。 可变电容电路包括:电连接到连接节点的第二和第三金属互连; 以及能够控制第三金属互连与连接节点之间的电连接的控制器。 连接开关连接在可变电容电路的第一金属互连和连接节点之间。 连接开关被配置为在存储单元的写入操作中电连接第一金属互连和连接节点。