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1. 发明申请

US20080103079A1 Cleaning agent 审中-公开
标题翻译：清洁剂
公开(公告)号：US20080103079A1
公开(公告)日：2008-05-01
申请号：US11976416
申请日：2007-10-24
申请人： Yuji Yoshinari , Masaki Takai , Makoto Hatori , Daisuke Yamamoto , Yuki Okamoto
发明人： Yuji Yoshinari , Masaki Takai , Makoto Hatori , Daisuke Yamamoto , Yuki Okamoto
IPC分类号： C11D17/00
CPC分类号： C11D3/046 , A61K8/19 , A61K8/361 , A61Q19/10
摘要： The cleaning agent, which is less likely to retain a surfactant on an object to be cleaned and not to restrict applicable objects to be cleaned, contains water from which polyvalent cations are removed and to which a sodium ion is added, and a surfactant. An example of the surfactant is a fatty acid salt. When the cleaning agent is applied to an object to be cleaned, stain adhered on the object is removed from the object by action of the surfactant. The surfactant hardly remains on the object due to the action of the water from which polyvalent cations are removed and to which a sodium ion is added. Accordingly, the cleaning agent can effectively wash a wide variety of objects, such as kitchens, tableware, food, washstands, bathrooms, toilets, vehicles, clothes and body skin, without damaging texture and deteriorating quality.
摘要翻译：不易于将待清洁物体保持表面活性剂并且不限制可清洁物体的清洁剂含有除去多价阳离子并添加了钠离子的水和表面活性剂。表面活性剂的实例是脂肪酸盐。当将清洁剂施加到待清洁的物体上时，通过表面活性剂的作用将附着在物体上的污渍从物体上除去。由于去除了多价阳离子的水的作用并且添加了钠离子，表面活性剂几乎不残留在物体上。因此，清洁剂可以有效地洗涤诸如厨房，餐具，食品，洗手盆，浴室，卫生间，车辆，衣服和身体皮肤的各种物品，而不会损坏质地和劣化质量。

2. 发明申请

US20080103203A1 Skin disinfectant 审中-公开
标题翻译：皮肤消毒剂
公开(公告)号：US20080103203A1
公开(公告)日：2008-05-01
申请号：US11976565
申请日：2007-10-25
申请人： Yuji Yoshinari , Masaki Takai , Makoto Hatori , Yuki Okamoto
发明人： Yuji Yoshinari , Masaki Takai , Makoto Hatori , Yuki Okamoto
IPC分类号： A61K31/201 , A61K47/04 , A61K47/12 , A61P31/10
CPC分类号： A61K8/361 , A01N37/02 , A01N37/06 , A01N59/00 , A61K8/19 , A61Q17/005 , A61Q19/10 , A01N25/30 , A01N2300/00
摘要： The skin disinfectant, which is able to sterilize skin by the action of a surfactant without damaging skin health conditions, contains water, from which polyvalent cations are removed and to which a sodium ion is added, and a surfactant. The surfactant is, for example, a fatty acid salt. When the skin disinfectant is applied onto skin, fungi and bacteria adhered or parasitic onto skin is sterilized by the action of the surfactant. At this time, the surfactant is not likely to give an irritation to skin due to the action of the water, from which polyvalent cations are removed and to which a sodium ion is added, and thus the skin health conditions tend not to be damaged. Accordingly, the skin disinfectant is useful as a remedy for, for example, a ringworm infectious disease.
摘要翻译：能够通过表面活性剂的作用对皮肤进行消毒而不损害皮肤健康状况的皮肤消毒剂含有除去多价阳离子并加入钠离子的水和表面活性剂的水。表面活性剂是例如脂肪酸盐。当将皮肤消毒剂施用到皮肤上时，通过表面活性剂的作用对附着或寄生在皮肤上的真菌和细菌进行灭菌。此时，由于除去多价阳离子并添加了钠离子的水的作用，表面活性剂不易对皮肤产生刺激，因此皮肤健康状况往往不被损坏。因此，皮肤消毒剂可用作例如癣感染性疾病的补救措施。

3. 发明申请

US20080058242A1 Cleaning fluid 审中-公开
标题翻译：清洗液
公开(公告)号：US20080058242A1
公开(公告)日：2008-03-06
申请号：US11892769
申请日：2007-08-27
申请人： Yuji Yoshinari , Masaki Takai , Makoto Hatori , Daisuke Yamamoto
发明人： Yuji Yoshinari , Masaki Takai , Makoto Hatori , Daisuke Yamamoto
IPC分类号： C11D17/08
CPC分类号： C11D7/10
摘要： The cleaning fluid, which is easily mass-produced, low priced, and safe and is also free from chemical substances contains water from which polyvalent cations are removed and to which sodium ions are added. When the cleaning fluid is applied to an object to be cleaned, stain adhered onto the object can be removed by action of the water. The object washed with the cleaning fluid is free from remnant of chemical substances, as is often not the case when washed with a cleaning fluid using chemical-substances such as a surfactant, and is therefore safe. Furthermore, since water stain or scale hardly remains on the object washed, new stain is not easily attached. Accordingly, the cleaning fluid is particularly effective when it is used as a cleaning fluid for kitchen sinks, tableware, foods, washstands, bathrooms, toilets, vehicles and clothes.
摘要翻译：容易批量生产，低价格且安全且不含化学物质的清洗液含有从其中除去多价阳离子并加入钠离子的水。当将清洁流体施加到待清洁物体上时，通过水的作用可以去除粘附到物体上的污渍。用清洗液清洗的物体没有残留的化学物质，因为使用化学物质如表面活性剂用清洁液洗涤时通常不是这种情况，因此是安全的。此外，由于洗涤物体上几乎不残留有水渍或鳞屑，所以新的污渍不容易附着。因此，当清洗液被用作厨房水槽，餐具，食品，洗手盆，浴室，卫生间，车辆和衣物的清洁液时，清洁液特别有效。

4. 发明申请

US20080057139A1 Skin-care water 审中-公开
标题翻译：护肤水
公开(公告)号：US20080057139A1
公开(公告)日：2008-03-06
申请号：US11892784
申请日：2007-08-27
申请人： Yuji Yoshinari , Masaki Takai , Makoto Hatori
发明人： Yuji Yoshinari , Masaki Takai , Makoto Hatori
IPC分类号： A61K33/00 , A61P17/00 , A61Q19/00
CPC分类号： A61Q19/007 , A61K8/19 , A61K9/08 , A61K33/00 , A61K47/02 , A61Q19/00 , A61K2300/00
摘要： The skin-care water, which is able to safely improve skin health conditions, such as dry skin, contains water from which polyvalent cations are removed and to which sodium ions are added, and may contain fragrant materials according to need. When the skin-care water is applied to skin, for example, by means of taking a bath, it improves moisture retention of skin, moisture content of skin, elasticity, texture density and the like without providing side effects, as is often not the case when a skin-care water containing chemical substances is used. Accordingly, the skin-care water is useful as a moisturizing agent for skin, and an improving agent for dry skin, itchy feeling, skin scale and atopic dermatitis.
摘要翻译：能够安全地改善皮肤健康状况（例如皮肤干燥）的护肤水含有从其中除去多价阳离子并加入钠离子的水，并且可以根据需要含有芳香物质。当皮肤护理用水例如通过洗澡时，可以改善皮肤的保湿性，皮肤含水量，弹性，质地密度等，而不会产生副作用当使用含有化学物质的护肤水时。因此，护肤水可用作皮肤的保湿剂，以及用于干性皮肤，瘙痒感，皮肤鳞片和特应性皮炎的改善剂。

5. 发明授权

US07994567B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07994567B2
公开(公告)日：2011-08-09
申请号：US12823453
申请日：2010-06-25
申请人： Tomoyuki Miyake , Masatoshi Morikawa , Yutaka Hoshino , Makoto Hatori
发明人： Tomoyuki Miyake , Masatoshi Morikawa , Yutaka Hoshino , Makoto Hatori
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66659 , H01L21/823425 , H01L23/3677 , H01L23/66 , H01L24/45 , H01L24/48 , H01L27/0629 , H01L27/088 , H01L29/0847 , H01L29/0878 , H01L29/4175 , H01L29/41758 , H01L29/7835 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2924/01079 , H01L2924/1305 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an offset drain region existing between a gate electrode and an n+ type drain region of the power MOSFET into a double offset one. More specifically, this is accomplished by adjusting the impurity concentration of an n− type offset drain region, which is closest to the gate electrode, to be relatively low and adjusting the impurity concentration of an n type offset drain region, which is distant from the gate electrode, to be relatively high.
摘要翻译：为了减小尺寸并提高具有由硅功率MOSFET组成的放大器元件的RF功率模块的功率附加效率，通常形成权衡关系的导通电阻和反馈电容通过形成结构存在于功率MOSFET的栅极电极和n +型漏极区域之间的偏移漏极区域，成为双偏移漏极区域。更具体地说，这是通过将最接近栅电极的n型偏移漏极区域的杂质浓度调整为相对较低而调整n型偏移漏极区域的杂质浓度来实现的，该杂质浓度远离栅电极，要比较高。

6. 发明授权

US07176520B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07176520B2
公开(公告)日：2007-02-13
申请号：US10902130
申请日：2004-07-30
申请人： Tomoyuki Miyake , Masatoshi Morikawa , Yutaka Hoshino , Makoto Hatori
发明人： Tomoyuki Miyake , Masatoshi Morikawa , Yutaka Hoshino , Makoto Hatori
IPC分类号： H01L29/76 , H01L29/94 , H01L27/01 , H01L27/12
CPC分类号： H01L29/66659 , H01L21/823425 , H01L23/3677 , H01L23/66 , H01L24/45 , H01L24/48 , H01L27/0629 , H01L27/088 , H01L29/0847 , H01L29/0878 , H01L29/4175 , H01L29/41758 , H01L29/7835 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2924/01079 , H01L2924/1305 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an offset drain region existing between a gate electrode and an n+ type drain region of the power MOSFET into a double offset one. More specifically, this is accomplished by adjusting the impurity concentration of an n− type offset drain region, which is closest to the gate electrode, to be relatively low and adjusting the impurity concentration of an n type offset drain region, which is distant from the gate electrode, to be relatively high.
摘要翻译：为了减小尺寸并提高具有由硅功率MOSFET组成的放大器元件的RF功率模块的功率附加效率，传统上处于折衷关系的导通电阻和反馈电容通过形成结构存在于功率MOSFET的栅极电极和n + SUP型漏极区域之间的偏移漏极区域，成为双偏移漏极区域。更具体地说，这是通过调节最靠近栅电极的n + SUP型偏移漏极区域的杂质浓度相对较低并调整n型偏移漏极的杂质浓度来实现的远离栅电极的区域相对较高。

7. 发明申请

US20110254087A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110254087A1
公开(公告)日：2011-10-20
申请号：US13167850
申请日：2011-06-24
申请人： Tomoyuki MIYAKE , Masatoshi Morikawa , Yutaka Hoshino , Makoto Hatori
发明人： Tomoyuki MIYAKE , Masatoshi Morikawa , Yutaka Hoshino , Makoto Hatori
IPC分类号： H01L29/10
CPC分类号： H01L29/66659 , H01L21/823425 , H01L23/3677 , H01L23/66 , H01L24/45 , H01L24/48 , H01L27/0629 , H01L27/088 , H01L29/0847 , H01L29/0878 , H01L29/4175 , H01L29/41758 , H01L29/7835 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2924/01079 , H01L2924/1305 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an offset drain region existing between a gate electrode and an n+ type drain region of the power MOSFET into a double offset one. More specifically, this is accomplished by adjusting the impurity concentration of an n− type offset drain region, which is closest to the gate electrode, to be relatively low and adjusting the impurity concentration of an n type offset drain region, which is distant from the gate electrode, to be relatively high.
摘要翻译：为了减小尺寸并提高具有由硅功率MOSFET组成的放大器元件的RF功率模块的功率附加效率，传统上处于折衷关系的导通电阻和反馈电容通过形成结构存在于功率MOSFET的栅极电极和n +型漏极区域之间的偏移漏极区域，成为双偏移漏极区域。更具体地说，这是通过将最接近栅电极的n型偏移漏极区域的杂质浓度调整为相对较低而调整n型偏移漏极区域的杂质浓度来实现的，该杂质浓度远离栅电极，要比较高。

8. 发明申请

US20090224318A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090224318A1
公开(公告)日：2009-09-10
申请号：US12412128
申请日：2009-03-26
申请人： Makoto Hatori , Yutaka Hoshino
发明人： Makoto Hatori , Yutaka Hoshino
IPC分类号： H01L29/78
CPC分类号： H01L21/823468 , H01L21/823425 , H01L29/0692 , H01L29/0847 , H01L29/1045 , H01L29/402 , H01L29/66659 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/1305 , H01L2924/13091 , H01L2924/181 , H01L2924/19105 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The invention improves the performance of a semiconductor device. A metal silicide film is formed by a silicide process on a gate electrode and an n+-type source region of an LDMOSFET, and no such metal silicide film is formed on an n−-type offset drain region, an n-type offset drain region, and an n+-type drain region. A side wall spacer comprising a silicon film is formed via an insulating film on the side wall of the gate electrode over the drain side thereof, and a field plate electrode is formed by this side wall spacer. The field plate electrode does not extend above the gate electrode, and a metal silicide film is formed over the entire upper surface of the gate electrode in the silicide process.
摘要翻译：本发明改进了半导体器件的性能。金属硅化物膜通过硅化物工艺在LDMOSFET的栅电极和n +型源极区上形成，并且在n型偏移漏极区域，n型偏移漏极区域上不形成这种金属硅化物膜，和n +型漏极区域。通过绝缘膜在其漏极侧的栅电极的侧壁上形成包括硅膜的侧壁隔片，并且通过该侧壁间隔物形成场板电极。场板电极不在栅电极上方延伸，并且在硅化物工艺中在栅电极的整个上表面上形成金属硅化物膜。

9. 发明申请

US20060057793A1 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20060057793A1
公开(公告)日：2006-03-16
申请号：US11222779
申请日：2005-09-12
申请人： Makoto Hatori , Yutaka Hoshino
发明人： Makoto Hatori , Yutaka Hoshino
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L21/823468 , H01L21/823425 , H01L29/0692 , H01L29/0847 , H01L29/1045 , H01L29/402 , H01L29/66659 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/1305 , H01L2924/13091 , H01L2924/181 , H01L2924/19105 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The invention improves the performance of a semiconductor device. A metal silicide film is formed by a silicide process on a gate electrode and an n+-type source region of an LDMOSFET, and no such metal silicide film is formed on an n−-type offset drain region, an n-type offset drain region, and an n+-type drain region. A side wall spacer comprising a silicon film is formed via an insulating film on the side wall of the gate electrode over the drain side thereof, and a field plate electrode is formed by this side wall spacer. The field plate electrode does not extend above the gate electrode, and a metal silicide film is formed over the entire upper surface of the gate electrode in the silicide process.
摘要翻译：本发明改进了半导体器件的性能。金属硅化物膜通过硅化物工艺在LDMOSFET的栅电极和n + H +型源极区上形成，并且在n + SUP→型偏移漏极区域，n型偏移漏极区域和n + + +漏极区域。通过绝缘膜在其漏极侧的栅电极的侧壁上形成包括硅膜的侧壁隔片，并且通过该侧壁间隔物形成场板电极。场板电极不在栅电极上方延伸，并且在硅化物工艺中在栅电极的整个上表面上形成金属硅化物膜。

10. 发明申请

US20050051814A1 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050051814A1
公开(公告)日：2005-03-10
申请号：US10902130
申请日：2004-07-30
申请人： Tomoyuki Miyake , Masatoshi Morikawa , Yutaka Hoshino , Makoto Hatori
发明人： Tomoyuki Miyake , Masatoshi Morikawa , Yutaka Hoshino , Makoto Hatori
IPC分类号： H01L21/336 , H01L21/8234 , H01L23/367 , H01L23/66 , H01L27/06 , H01L27/088 , H01L29/08 , H01L29/417 , H01L29/78 , H01L29/76 , H01L29/94
CPC分类号： H01L29/66659 , H01L21/823425 , H01L23/3677 , H01L23/66 , H01L24/45 , H01L24/48 , H01L27/0629 , H01L27/088 , H01L29/0847 , H01L29/0878 , H01L29/4175 , H01L29/41758 , H01L29/7835 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2924/01079 , H01L2924/1305 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an offset drain region existing between a gate electrode and an n+ type drain region of the power MOSFET into a double offset one. More specifically, this is accomplished by adjusting the impurity concentration of an n− type offset drain region, which is closest to the gate electrode, to be relatively low and adjusting the impurity concentration of an n type offset drain region, which is distant from the gate electrode, to be relatively high.
摘要翻译：为了减小尺寸并提高具有由硅功率MOSFET组成的放大器元件的RF功率模块的功率附加效率，传统上处于折衷关系的导通电阻和反馈电容通过形成结构存在于功率MOSFET的栅极电极和n +型漏极区域之间的偏移漏极区域，成为双偏移漏极区域。更具体地说，这是通过调节最靠近栅电极的n +型偏移漏极区域的杂质浓度相对较低并且调节n型偏移漏极区域的杂质浓度来实现的从栅电极到相对较高。

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