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1. 发明授权

US06341053B1 Magnetic tunnel junction elements and their fabrication method 有权
标题翻译：磁隧道结元件及其制造方法
公开(公告)号：US06341053B1
公开(公告)日：2002-01-22
申请号：US09182671
申请日：1998-10-30
申请人： Masafumi Nakada , Hisanao Tsuge , Yuji Tsukamoto , Hisao Matsutera , Nobuyuki Ishiwata , Atsushi Kamijo
发明人： Masafumi Nakada , Hisanao Tsuge , Yuji Tsukamoto , Hisao Matsutera , Nobuyuki Ishiwata , Atsushi Kamijo
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/06 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , G11C11/16 , H01F10/3268 , H01L43/08
摘要： The present invention provides a magnetic tunnel junction device for an external magnetic field sensor. The device comprises a stack of multi-layers, which include a first antiferromagnetic pinning layer, a ferromagnetic free layer, a tunneling barrier layer, a ferromagnetic pinned layer, and a second antiferromagnetic pinning layer. The first pinning layer has a first pinning field, which pins a magnetization of the free layer in a track width direction. The second pinning layer has a second pinning field, which pins a magnetization of the pinned layer in a direction in the plane of the stacked layers of the magnetic tunnel junction, along the applied external magnetic field direction.
摘要翻译：本发明提供一种用于外部磁场传感器的磁性隧道结装置。该装置包括多层堆叠，其包括第一反铁磁钉扎层，铁磁自由层，隧道势垒层，铁磁钉扎层和第二反铁磁钉扎层。第一钉扎层具有第一钉扎场，其引导自由层在轨道宽度方向上的磁化。第二钉扎层具有第二钉扎场，其沿着所施加的外部磁场方向在磁性隧道结的堆叠层的平面的方向上引导钉扎层的磁化。

2. 发明授权

US06174736B1 Method of fabricating ferromagnetic tunnel junction device 有权
标题翻译：制造铁磁隧道连接装置的方法
公开(公告)号：US06174736B1
公开(公告)日：2001-01-16
申请号：US09209696
申请日：1998-12-11
申请人： Yuji Tsukamoto , Hisanao Tsuge , Nobuyuki Ishiwata , Hisao Matsutera , Masafumi Nakada , Atsushi Kamijo
发明人： Yuji Tsukamoto , Hisanao Tsuge , Nobuyuki Ishiwata , Hisao Matsutera , Masafumi Nakada , Atsushi Kamijo
IPC分类号： H01L2100
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/31 , G11B5/3163 , G11B5/3903 , G11B5/3909 , H01L43/12 , Y10T428/12458 , Y10T428/12465 , Y10T428/12569 , Y10T428/12931
摘要： There is provided a method of fabricating a ferromagnetic tunnel junction device, including the steps of (a) forming a first ferromagnetic layer on a substrate, (b) forming a tunnel barrier layer on the first ferromagnetic layer, (c) forming a second ferromagnetic layer on the tunnel barrier layer, (d) mechanically polishing end surfaces of the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer, and (e) etching the surfaces of the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer. The method provides a ferromagnetic tunnel junction device having a height defined with high accuracy, and including a tunnel barrier layer keeping first and second ferromagnetic layers in electrical isolation with each other.
摘要翻译：提供一种制造铁磁隧道结器件的方法，包括以下步骤：（a）在衬底上形成第一铁磁层，（b）在第一铁磁层上形成隧道势垒层，（c）形成第二铁磁性层（d）机械抛光第一铁磁层，隧道势垒层和第二铁磁层的端面，以及（e）蚀刻第一铁磁层，隧道势垒层和第二铁磁层。该方法提供具有高精度限定的高度的铁磁隧道连接装置，并且包括保持彼此电隔离的第一和第二铁磁层的隧道势垒层。

3. 发明申请

US20050219772A1 Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer 有权
公开(公告)号：US20050219772A1
公开(公告)日：2005-10-06
申请号：US11139680
申请日：2005-05-31
申请人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
发明人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
IPC分类号： G01R33/09 , G11B5/00 , G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/00 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967
摘要： In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.

4. 发明授权

US06542342B1 Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer 有权
标题翻译：磁阻效应传感器具有直接连接到自由层的纵向偏置层
公开(公告)号：US06542342B1
公开(公告)日：2003-04-01
申请号：US09449475
申请日：1999-11-29
申请人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
发明人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
IPC分类号： G11B539
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/00 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967
摘要： In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.
摘要翻译：在包括插入层和自由层之间的钉扎层，钉扎层，自由层和非磁性层的磁阻效应传感器中，纵向偏置层直接连接到自由层的一部分以施加偏置磁场到自由层，从而偏置自由层的磁化方向，使得自由层的磁化方向与纵向偏置层的磁化方向一致。

5. 发明授权

US07372673B2 Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer 有权
标题翻译：具有纵向偏置层和控制层的磁阻效应传感器直接连接到自由层
公开(公告)号：US07372673B2
公开(公告)日：2008-05-13
申请号：US11139680
申请日：2005-05-31
申请人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
发明人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/00 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967
摘要： In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.
摘要翻译：在包括插入层和自由层之间的钉扎层，钉扎层，自由层和非磁性层的磁阻效应传感器中，纵向偏置层直接连接到自由层的一部分以施加偏置磁场到自由层，从而偏置自由层的磁化方向，使得自由层的磁化方向与纵向偏置层的磁化方向一致。

6. 发明授权

US06950290B2 Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer 失效
标题翻译：磁阻效应传感器具有直接连接到自由层的纵向偏置层
公开(公告)号：US06950290B2
公开(公告)日：2005-09-27
申请号：US10241520
申请日：2002-09-12
申请人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
发明人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Tsutomu Ishi , Hiroaki Honjou , Kunihiko Ishihara , Jun-Ichi Fujikata , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
IPC分类号： G01R33/09 , G11B5/00 , G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/00 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967
摘要： In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.
摘要翻译：在包括插入层和自由层之间的钉扎层，钉扎层，自由层和非磁性层的磁阻效应传感器中，纵向偏置层直接连接到自由层的一部分以施加偏置磁场到自由层，从而偏置自由层的磁化方向，使得自由层的磁化方向与纵向偏置层的磁化方向一致。

7. 发明授权

US06490139B1 Magneto-resistive element and magnetic head for data writing/reading 有权
标题翻译：用于数据写入/读取的磁阻元件和磁头
公开(公告)号：US06490139B1
公开(公告)日：2002-12-03
申请号：US09492229
申请日：2000-01-27
申请人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
发明人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Hisao Matsutera , Hisanao Tsuge , Atsushi Kamijo
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3967
摘要： A magneto-resistive element comprises a first electrode, a magneto-resistive layer formed on the first electrode in which resistance is changed in accordance with magnetic field, and a second electrode layer formed on the magneto-resistive layer. The magneto-resistive layer has a first magnetic layer formed on the first electrode, a non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer. The average surface roughness of the first electrode is equal to or smaller than 0.3 nm. Since the first electrode has such the small average surface roughness, the non-magnetic layer formed on the first electrode layer is flattened, thus, current leakage is prevented. The first electrode is made of at least one of Ta, Zr, Ti, Hf, W, Mo, Y, V, Nb, Au, Ag, Pd, and Pt which has strong bond strength. Since the first electrode has strong bond strength, exfoliation of the first electrode from the layers contacting the first electrode does not occur.
摘要翻译：磁阻元件包括第一电极，形成在电阻根据磁场改变的第一电极上的磁阻层和形成在磁阻层上的第二电极层。磁阻层具有形成在第一电极上的第一磁性层，形成在第一磁性层上的非磁性层和形成在非磁性层上的第二磁性层。第一电极的平均表面粗糙度等于或小于0.3nm。由于第一电极具有如此小的平均表面粗糙度，所以形成在第一电极层上的非磁性层变扁平化，从而防止了电流泄漏。第一电极由具有强粘合强度的Ta，Zr，Ti，Hf，W，Mo，Y，V，Nb，Au，Ag，Pd和Pt中的至少一种制成。由于第一电极具有强的结合强度，所以不会发生第一电极与接触第一电极的层的剥离。

8. 发明授权

US06493195B1 Magnetoresistance element, with lower electrode anti-erosion/flaking layer 有权
标题翻译：磁阻元件，具有较低的电极抗侵蚀/剥落层
公开(公告)号：US06493195B1
公开(公告)日：2002-12-10
申请号：US09651068
申请日：2000-08-30
申请人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Eizo Fukami , Hiroaki Honjo , Hisanao Tsuge , Atsushi Kamijo
发明人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Eizo Fukami , Hiroaki Honjo , Hisanao Tsuge , Atsushi Kamijo
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/09 , G11B5/3133 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B5/40 , H01F10/3268 , H01F41/302
摘要： A magnetoresistance element includes a lower electrode layer, a magnetoresistance effect layer, an upper electrode layer and a lower electrode anti-erosion/flaking layer. The lower electrode anti-erosion/flaking layer, which is formed before a photoresist layer remaining on the patterned lower electrode layer is removed, is formed around the lower electrode layer so that its edge facing the lower electrode layer will be in contact with the edge of the lower electrode layer. By use of the lower electrode anti-erosion/flaking layer, the edge of the lower electrode layer is protected from being exposed to a release agent containing a dissolved photoresist in a photoresist layer removal step (when the photoresist layer remaining on the patterned lower electrode layer is removed), thereby the increase of roughness of the edge of the lower electrode layer due to erosion/flaking of the edge in the photoresist removal step can be avoided, and thereby electrical shorts between the upper electrode layer and the lower electrode layer can be eliminated, and thereby a magnetoresistance element of high sensitivity and high performance can be obtained and manufacturing yield of the magnetoresistance elements can be improved.
摘要翻译：磁阻元件包括下电极层，磁阻效应层，上电极层和下电极抗侵蚀/剥落层。在除去形成在图案化的下电极层上的光致抗蚀剂层之前形成的下电极抗腐蚀/剥离层围绕下电极层形成，使得其面向下电极层的边缘将与边缘的下电极层。通过使用下电极抗腐蚀/剥落层，在光致抗蚀剂层去除步骤中（当残留在图案化的下电极上的光致抗蚀剂层时，保护下电极层的边缘不暴露于含有溶解的光致抗蚀剂的脱模剂层），由此可以避免由于光致抗蚀剂去除步骤中的边缘的侵蚀/剥落引起的下电极层的边缘的粗糙度的增加，从而可以使上电极层和下电极层之间的电短路从而可以获得高灵敏度和高性能的磁阻元件，并且可以提高磁阻元件的制造成品率。

9. 发明授权

US06452204B1 Tunneling magnetoresistance transducer and method for manufacturing the same 有权
公开(公告)号：US06452204B1
公开(公告)日：2002-09-17
申请号：US09456881
申请日：1999-12-08
申请人： Nobuyuki Ishiwata , Keishi Ohashi , Hisanao Tsuge
发明人： Nobuyuki Ishiwata , Keishi Ohashi , Hisanao Tsuge
IPC分类号： H01L2906
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/58 , G11B33/14 , H01F10/3254
摘要： In a tunneling magnetoresistance transducer including first and second ferromagnetic layers and a tunnel barrier layer made of insulating material sandwiched by the first and second ferromagnetic layers, the resistance of the tunnel barrier layer remains essentially constant independent of the temperature of the transducer.

10. 发明申请

US20060274456A1 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system 有权
公开(公告)号：US20060274456A1
公开(公告)日：2006-12-07
申请号：US11477402
申请日：2006-06-30
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

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