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    • 3. 发明申请
    • OVERHEAT PROTECTION CIRCUIT AND POWER SUPPLY INTEGRATED CIRCUIT
    • 超声波保护电路和电源集成电路
    • US20100321845A1
    • 2010-12-23
    • US12790070
    • 2010-05-28
    • Takashi ImuraTakao NakashimoMasakazu SugiuraAtsushi IgarashiMasahiro Mitani
    • Takashi ImuraTakao NakashimoMasakazu SugiuraAtsushi IgarashiMasahiro Mitani
    • H02H5/04
    • G05F1/569
    • Provided is a power supply integrated circuit including an overheat protection circuit with high detection accuracy. The overheat protection circuit includes: a current generation circuit including: a first metal oxide semiconductor (MOS) transistor including a gate terminal and a drain terminal that are connected to each other, the first MOS transistor operating in a weak inversion region; a second MOS transistor including a gate terminal connected to the gate terminal of the first MOS transistor, the second MOS transistor having the same conductivity type as the first MOS transistor and operating in a weak inversion region; and a first resistive element connected to a source terminal of the second MOS transistor; and a comparator for comparing a reference voltage having positive temperature characteristics and a temperature voltage having negative temperature characteristics, which are obtained based on a current generated by the current generation circuit.
    • 提供了一种具有高检测精度的过热保护电路的电源集成电路。 过热保护电路包括:电流产生电路,包括:第一金属氧化物半导体(MOS)晶体管,其包括彼此连接的栅极端子和漏极端子,所述第一MOS晶体管在弱反转区域中工作; 第二MOS晶体管,包括连接到第一MOS晶体管的栅极端子的栅极端子,第二MOS晶体管具有与第一MOS晶体管相同的导电类型并且在弱反转区域中操作; 以及连接到所述第二MOS晶体管的源极端子的第一电阻元件; 以及比较器,用于比较具有正温度特性的参考电压和具有负温度特性的温度电压,其基于由电流产生电路产生的电流获得。
    • 4. 发明授权
    • Overheat protection circuit and power supply integrated circuit
    • 过热保护电路和电源集成电路
    • US08451571B2
    • 2013-05-28
    • US12790070
    • 2010-05-28
    • Takashi ImuraTakao NakashimoMasakazu SugiuraAtsushi IgarashiMasahiro Mitani
    • Takashi ImuraTakao NakashimoMasakazu SugiuraAtsushi IgarashiMasahiro Mitani
    • H02H3/00
    • G05F1/569
    • Provided is a power supply integrated circuit including an overheat protection circuit with high detection accuracy. The overheat protection circuit includes: a current generation circuit including: a first metal oxide semiconductor (MOS) transistor including a gate terminal and a drain terminal that are connected to each other, the first MOS transistor operating in a weak inversion region; a second MOS transistor including a gate terminal connected to the gate terminal of the first MOS transistor, the second MOS transistor having the same conductivity type as the first MOS transistor and operating in a weak inversion region; and a first resistive element connected to a source terminal of the second MOS transistor; and a comparator for comparing a reference voltage having positive temperature characteristics and a temperature voltage having negative temperature characteristics, which are obtained based on a current generated by the current generation circuit.
    • 提供了一种具有高检测精度的过热保护电路的电源集成电路。 过热保护电路包括:电流产生电路,包括:第一金属氧化物半导体(MOS)晶体管,其包括彼此连接的栅极端子和漏极端子,所述第一MOS晶体管在弱反转区域中工作; 第二MOS晶体管,包括连接到第一MOS晶体管的栅极端子的栅极端子,第二MOS晶体管具有与第一MOS晶体管相同的导电类型并且在弱反转区域中操作; 以及连接到所述第二MOS晶体管的源极端子的第一电阻元件; 以及比较器,用于比较具有正温度特性的参考电压和具有负温度特性的温度电压,其基于由电流产生电路产生的电流获得。
    • 6. 发明申请
    • REFERENCE VOLTAGE CIRCUIT
    • 参考电压电路
    • US20110074496A1
    • 2011-03-31
    • US12888799
    • 2010-09-23
    • Hideo YoshinoTakashi Imura
    • Hideo YoshinoTakashi Imura
    • G05F3/02
    • G05F3/242
    • Provided is a reference voltage circuit in which a temperature characteristic of a reference voltage is excellent and a circuit scale is small. In the reference voltage circuit, for example, a temperature correction circuit separated from the reference voltage circuit is not used and a difference voltage between threshold voltages of two E-type NMOS transistors (14 and 15) is added to a threshold voltage of a D-type NMOS transistor to generate a reference voltage (Vref). Therefore, the influence of the D-type NMOS transistor on the reference voltage (Vref), which is a degradation factor of the temperature characteristic of the reference voltage (Vref), may be reduced to suppress a change in tilt and curve of the reference voltage (Vref) with respect to a temperature.
    • 提供了一种参考电压电路,其中参考电压的温度特性优异且电路规模小。 在参考电压电路中,例如,不使用与参考电压电路分离的温度校正电路,并且将两个E型NMOS晶体管(14和15)的阈值电压之间的差分电压加到D的阈值电压 型NMOS晶体管,以产生参考电压(Vref)。 因此,可以减小D型NMOS晶体管对作为参考电压(Vref)的温度特性的劣化因子的参考电压(Vref)的影响,以抑制参考电压的倾斜和曲线的变化 电压(Vref)相对于温度。
    • 8. 发明申请
    • Reference voltage circuit
    • 参考电压电路
    • US20090045870A1
    • 2009-02-19
    • US12228805
    • 2008-08-15
    • Takashi Imura
    • Takashi Imura
    • G05F1/10
    • G05F1/56
    • Provided is a reference voltage circuit whose power supply rejection ratio is large even in a case where a power supply voltage is low. Even in a case where the power supply voltage of a power supply terminal (10) becomes lower and thus an NMOS transistor (71) operates in non-saturation to reduce an output resistance (ro71) of the NMOS transistor (71), when a gain (Ao) of a differential amplifier circuit (60) is large, the power supply rejection ratio (PSRRLF) is also large. Therefore, even when a minimum operating voltage of the reference voltage circuit is low, the power supply rejection ratio (PSRRLF) can be made larger. In other words, since the gain (Ao) of the differential amplifier circuit (60) contributes to the power supply rejection ratio (PSRRLF), when the gain (Ao) of the differential amplifier circuit (60) increases, the power supply rejection ratio (PSRRLF) also becomes larger by the increase.
    • 提供了即使在电源电压低的情况下电源抑制比大的基准电压电路。 即使在电源端子(10)的电源电压变低的情况下,NMOS晶体管(71)工作在非饱和状态,以降低NMOS晶体管(71)的输出电阻(ro71),当 差分放大电路(60)的增益(Ao)大,电源抑制比(PSRRLF)也大。 因此,即使基准电压电路的最小工作电压低,也可以使电源抑制比(PSRRLF)更大。 换句话说,由于差分放大电路(60)的增益(Ao)有助于电源抑制比(PSRRLF),当差分放大电路(60)的增益(Ao)增加时,电源抑制比 (PSRRLF)也随着增加而变大。
    • 9. 发明授权
    • Voltage regulator
    • 电压调节器
    • US09110487B2
    • 2015-08-18
    • US13462440
    • 2012-05-02
    • Kaoru SakaguchiTakashi Imura
    • Kaoru SakaguchiTakashi Imura
    • G05F3/16G05F1/573
    • G05F1/573
    • Provided is a voltage regulator including an overcurrent protection circuit, which does not need a test circuit. The voltage regulator has a configuration in which a reference voltage circuit includes an element that determines a reference voltage and an overcurrent protection circuit includes an element that determines a maximum output current, the element of the reference voltage circuit and the element of the overcurrent protection circuit having the same characteristics. Accordingly, there is a correlation between an output voltage before trimming and the maximum output current for overcurrent protection. Thus, a maximum output current before trimming can be estimated without performing evaluation by a test circuit.
    • 提供了包括不需要测试电路的过电流保护电路的电压调节器。 电压调节器具有这样的配置,其中参考电压电路包括确定参考电压的元件,并且过电流保护电路包括确定最大输出电流的元件,参考电压电路的元件和过电流保护电路的元件 具有相同的特征。 因此,在修整前的输出电压与过电流保护的最大输出电流之间存在相关性。 因此,可以在不进行测试电路的评估的情况下估计修整之前的最大输出电流。
    • 10. 发明授权
    • Voltage regulator
    • 电压调节器
    • US08502513B2
    • 2013-08-06
    • US12653535
    • 2009-12-15
    • Takashi Imura
    • Takashi Imura
    • G05F1/40H02H7/00
    • G05F1/56
    • A voltage regulator has an output transistor that outputs an output voltage. A first circuit controls a control terminal voltage to increase the output voltage when an undershoot has occurred in the output voltage. A second circuit controls the control terminal voltage to prevent an output current from exceeding an overcurrent when the output current becomes the overcurrent, and disables the first circuit when the output current is prevented from exceeding the overcurrent so that the first circuit does not control the control terminal voltage to increase the output voltage.
    • 电压调节器具有输出输出电压的输出晶体管。 当在输出电压中发生下冲时,第一电路控制控制端电压以增加输出电压。 当输出电流变为过电流时,第二电路控制控制端电压以防止输出电流超过过电流,并且当防止输出电流超过过电流时禁止第一电路,使得第一电路不控制控制 端电压增加输出电压。