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1. 发明授权

US5989622A Intermittent coating method and apparatus therefor 失效
标题翻译：间歇涂布方法及其设备
公开(公告)号：US5989622A
公开(公告)日：1999-11-23
申请号：US729958
申请日：1996-10-15
申请人： Yuji Iwashita , Seiichi Endo , Keiichi Morimoto
发明人： Yuji Iwashita , Seiichi Endo , Keiichi Morimoto
IPC分类号： B05C1/16 , B05C5/02 , B05C11/10 , B05C17/06 , B05D1/26 , B05D1/32 , B05D7/00 , B05D7/14 , H01M4/04 , H01M6/10 , B05D5/12
CPC分类号： H01M4/0411 , B05C11/1002 , B05C11/1021 , B05C11/1039 , B05C5/0254 , B05D1/265 , H01M4/04 , H01M4/0404 , B05C5/0258 , H01M6/10
摘要： The method is related to intermittent coating capable of distinctly defining a boundary between a coated region and an uncoated region on a web, to thereby intermittently form a coated film on the web with increased accuracy and efficiency. A coating liquid feed pump is arranged so as to alternately communicate with a circulation line and a pocket of an extrusion type coater through a directional control valve, resulting in coating liquid being intermittently fed to the pocket and then forced out of a slit, so that coated regions and uncoated regions may be alternately formed on a conductive sheet material. During interruption of communication between the pocket and the feed pump, the pocket is permitted to communicate via a discharge pipe and a shut-off valve with a sub-tank to reduce a pressure of coating liquid in the pocket, to thereby prevent undesired feeding of coating liquid to the uncoated region beyond an end position of the coated region.
摘要翻译：该方法涉及能够明确地限定幅材上的涂覆区域和未涂覆区域之间的边界的间歇涂层，从而以更高的精度和效率间歇地在幅材上形成涂布膜。涂布液体供给泵被布置成通过方向控制阀与挤出型涂布机的循环管线和袋口交替连通，导致涂布液体被间歇地供给到袋中，然后被迫从狭缝中排出，使得涂覆区域和未涂覆区域可以交替地形成在导电片材上。在袋和供给泵之间的连通中断期间，允许袋通过排放管和截流阀与副罐连通，以减小在袋中涂覆液体的压力，从而防止不期望的进料将涂覆液体涂覆到涂覆区域的结束位置之外的未涂覆区域。

2. 发明授权

US09154004B2 Rare earth sintered magnet and motor 有权
标题翻译：稀土烧结磁体和电机
公开(公告)号：US09154004B2
公开(公告)日：2015-10-06
申请号：US13390016
申请日：2011-03-04
申请人： Makoto Iwasaki , Fumitaka Baba , Satoshi Tanaka , Hideki Sasaki , Takahide Kurahashi , Hitoshi Maro , Keiichi Morimoto , Seiichi Endo
发明人： Makoto Iwasaki , Fumitaka Baba , Satoshi Tanaka , Hideki Sasaki , Takahide Kurahashi , Hitoshi Maro , Keiichi Morimoto , Seiichi Endo
IPC分类号： H02K15/03 , H02K15/12 , H02K15/16 , H01F7/02 , H01F41/02 , H02K1/02 , B22F3/24 , B22F9/02 , B22F9/04 , C22C33/02 , C22C38/00 , C22C38/06 , C22C38/10 , C22C38/16 , H01F1/057
CPC分类号： H02K1/02 , B22F3/24 , B22F9/023 , B22F9/04 , B22F2999/00 , C22C33/0278 , C22C38/002 , C22C38/005 , C22C38/06 , C22C38/10 , C22C38/16 , H01F1/0577 , H01F7/02 , H01F41/0293 , H02K15/03 , B22F2207/01
摘要： In the rare earth sintered magnet, the ratio of R2 to the sum of R1 and R2 that are contained in crystal grain boundaries surrounding the crystal grains in the rare earth sintered magnet body is higher than the ratio of R2 to the sum of R1 and R2 in the crystal grains, and the concentration of R2 increases from the central portion of the rare earth sintered magnet body toward the surface of the rare earth sintered magnet body. In addition, the degree of unevenness in residual magnetic flux density on the surface of the rare earth sintered magnet body is smaller than 3.0%.
摘要翻译：在稀土烧结磁体中，与稀土类烧结磁体的晶粒周围的晶粒边界所包含的R 2与R 2与R 2之和的比值R2高于R1与R2的和的比例在晶粒中，R2的浓度从稀土类烧结磁体的中央向稀土类烧结体的表面增加。此外，稀土烧结磁体的表面残留磁通密度的不均匀度小于3.0％。

3. 发明申请

US20120139388A1 RARE EARTH SINTERED MAGNET AND MOTOR 有权
标题翻译：稀土烧结磁铁和电机
公开(公告)号：US20120139388A1
公开(公告)日：2012-06-07
申请号：US13390016
申请日：2011-03-04
申请人： Makoto Iwasaki , Fumitaka Baba , Satoshi Tanaka , Hideki Sasaki , Takahide Kurahashi , Hitoshi Maro , Keiichi Morimoto , Seiichi Endo
发明人： Makoto Iwasaki , Fumitaka Baba , Satoshi Tanaka , Hideki Sasaki , Takahide Kurahashi , Hitoshi Maro , Keiichi Morimoto , Seiichi Endo
IPC分类号： H02K1/12 , H02K1/22 , H01F7/02
CPC分类号： H02K1/02 , B22F3/24 , B22F9/023 , B22F9/04 , B22F2999/00 , C22C33/0278 , C22C38/002 , C22C38/005 , C22C38/06 , C22C38/10 , C22C38/16 , H01F1/0577 , H01F7/02 , H01F41/0293 , H02K15/03 , B22F2207/01
摘要： In the rare earth sintered magnet, the ratio of R2 to the sum of R1 and R2 that are contained in crystal grain boundaries surrounding the crystal grains in the rare earth sintered magnet body is higher than the ratio of R2 to the sum of R1 and R2 in the crystal grains, and the concentration of R2 increases from the central portion of the rare earth sintered magnet body toward the surface of the rare earth sintered magnet body. In addition, the degree of unevenness in residual magnetic flux density on the surface of the rare earth sintered magnet body is smaller than 3.0%.
摘要翻译：在稀土烧结磁体中，与稀土类烧结磁体的晶粒周围的晶粒边界所包含的R 2与R 2与R 2之和的比值R2高于R1与R2的和的比例在晶粒中，R2的浓度从稀土类烧结磁体的中央向稀土类烧结体的表面增加。此外，稀土烧结磁体的表面残留磁通密度的不均匀度小于3.0％。

4. 发明申请

US20090179249A1 PROGRAMMABLE NONVOLATILE MEMORY AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
标题翻译：可编程非易失性存储器和半导体集成电路器件
公开(公告)号：US20090179249A1
公开(公告)日：2009-07-16
申请号：US12405579
申请日：2009-03-17
申请人： Takashi Tanaka , Seiichi Endo
发明人： Takashi Tanaka , Seiichi Endo
IPC分类号： H01L29/788
CPC分类号： G11C16/0433 , H01L27/115 , H01L27/11526 , H01L27/11529
摘要： Distance λm between a floating gate and a drain contact of a floating gate transistor forming a memory cell is set to be greater than a distance λ determined based on a minimum design dimension between a control gate and a contact of a peripheral transistor. Data retention characteristics of a programmable memory which stores data in accordance with the amount of accumulated charges in the floating gate can be ensured without being affecting by mask misalignment or the like.
摘要翻译：形成存储单元的浮置栅晶体管的浮置栅极和漏极接触点之间的距离设定为大于基于控制栅极与外围晶体管的触点之间的最小设计尺寸确定的距离λ。可以确保根据浮动栅极中的累积电荷量存储数据的可编程存储器的数据保持特性，而不受掩模未对准等的影响。

5. 发明授权

US07507435B2 Slitter apparatus and production method of electrode 有权
标题翻译：分切机及电极的生产方法
公开(公告)号：US07507435B2
公开(公告)日：2009-03-24
申请号：US11166262
申请日：2005-06-27
申请人： Kazuo Katai , Yousuke Miyaki , Seiichi Endo
发明人： Kazuo Katai , Yousuke Miyaki , Seiichi Endo
IPC分类号： B05D5/12 , B05D3/12
CPC分类号： H01M4/0404 , B26D1/0006 , B26D1/225 , B26D1/245 , B26D2001/002 , B26D2001/0046 , B26D2001/0053 , B26D2007/0075 , H01M4/04 , Y10T83/04 , Y10T83/4757 , Y10T83/4778
摘要： An electrode production method has an active-material-containing layer forming step of applying an electrode-forming coating solution containing an electrode active material, a binder capable of binding the electrode active material, and a liquid capable of dissolving or dispersing the binder, onto a collector sheet, and thereafter removing the liquid to form an active-material-containing layer on the collector, thereby obtaining a electrode sheet; and an electrode forming step of cutting the electrode sheet with a slitter apparatus to obtain an electrode.
摘要翻译：电极制造方法具有含有活性物质的层形成工序，将含有电极活性物质的电极形成用涂布液，能够结合电极活性物质的粘合剂以及能够将粘合剂溶解或分散的液体涂布到集电体片，然后除去液体，在集电体上形成含活性物质的层，得到电极片; 以及电极形成步骤，用切割装置切割电极片以获得电极。

6. 发明授权

US07791943B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US07791943B2
公开(公告)日：2010-09-07
申请号：US12571917
申请日：2009-10-01
申请人： Motoharu Ishii , Seiichi Endo
发明人： Motoharu Ishii , Seiichi Endo
IPC分类号： G11C11/34
CPC分类号： G11C16/3468 , G11C16/344 , G11C16/3445 , G11C16/3477 , H01L27/11526 , H01L27/11529
摘要： In a nonvolatile memory cell, a selection transistor is connected to a memory cell transistor in series. The selection transistor is formed into a double layer gate structure, and has a voltage of each gate driven individually and separately. Using capacitive coupling between these stacked gate electrode layers of the selection transistor, a gate potential of the selection transistor is set to the predetermined voltage level. An absolute value of the voltage level generated by a voltage generator to the gates of the selection transistor can be made small, so that current consumption can be reduced and an layout area of the voltage generator can be reduced. Thus, a nonvolatile semiconductor memory device with a low current consumption and a small chip layout area is provided.
摘要翻译：在非易失性存储单元中，选择晶体管串联连接到存储单元晶体管。选择晶体管形成双层栅极结构，并且每个栅极的电压分别驱动。使用选择晶体管的这些叠层栅极电极层之间的电容耦合，将选择晶体管的栅极电位设置为预定电压电平。可以使由电压发生器对选择晶体管的栅极产生的电压电平的绝对值较小，从而可以减少电流消耗，并且可以减小电压发生器的布局面积。因此，提供了具有低电流消耗和小芯片布局面积的非易失性半导体存储器件。

7. 发明授权

US07518176B2 Programmable nonvolatile memory and semiconductor integrated circuit device 有权
标题翻译：可编程非易失存储器和半导体集成电路器件
公开(公告)号：US07518176B2
公开(公告)日：2009-04-14
申请号：US11411935
申请日：2006-04-27
申请人： Takashi Tanaka , Seiichi Endo
发明人： Takashi Tanaka , Seiichi Endo
IPC分类号： H01L21/336
CPC分类号： G11C16/0433 , H01L27/115 , H01L27/11526 , H01L27/11529
摘要： Distance λm between a floating gate and a drain contact of a floating gate transistor forming a memory cell is set to be greater than a distance λ determined based on a minimum design dimension between a control gate and a contact of a peripheral transistor. Data retention characteristics of a programmable memory which stores data in accordance with the amount of accumulated charges in the floating gate can be ensured without being affecting by mask misalignment or the like.
摘要翻译：形成存储单元的浮置栅晶体管的浮置栅极和漏极接触点之间的距离设定为大于基于控制栅极与外围晶体管的触点之间的最小设计尺寸确定的距离λ。可以确保根据浮动栅极中的累积电荷量存储数据的可编程存储器的数据保持特性，而不受掩模未对准等的影响。

8. 发明申请

US20080144383A1 Nonvolatile semiconductor memory device 审中-公开
公开(公告)号：US20080144383A1
公开(公告)日：2008-06-19
申请号：US12010020
申请日：2008-01-18
申请人： Motoharu Ishii , Seiichi Endo
发明人： Motoharu Ishii , Seiichi Endo
IPC分类号： G11C16/06
CPC分类号： G11C16/3468 , G11C16/344 , G11C16/3445 , G11C16/3477 , H01L27/11526 , H01L27/11529
摘要： In a nonvolatile memory cell, a selection transistor is connected to a memory cell transistor in series. The selection transistor is formed into a double layer gate structure, and has a voltage of each gate driven individually and separately. Using capacitive coupling between these stacked gate electrode layers of the selection transistor, a gate potential of the selection transistor is set to the predetermined voltage level. An absolute value of the voltage level generated by a voltage generator to the gates of the selection transistor can be made small, so that current consumption can be reduced and an layout area of the voltage generator can be reduced. Thus, a nonvolatile semiconductor memory device with a low current consumption and a small chip layout area is provided.

9. 发明申请

US20100014355A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20100014355A1
公开(公告)日：2010-01-21
申请号：US12571917
申请日：2009-10-01
申请人： Motoharu Ishii , Seiichi Endo
发明人： Motoharu Ishii , Seiichi Endo
IPC分类号： G11C16/04
CPC分类号： G11C16/3468 , G11C16/344 , G11C16/3445 , G11C16/3477 , H01L27/11526 , H01L27/11529
摘要： In a nonvolatile memory cell, a selection transistor is connected to a memory cell transistor in series. The selection transistor is formed into a double layer gate structure, and has a voltage of each gate driven individually and separately. Using capacitive coupling between these stacked gate electrode layers of the selection transistor, a gate potential of the selection transistor is set to the predetermined voltage level. An absolute value of the voltage level generated by a voltage generator to the gates of the selection transistor can be made small, so that current consumption can be reduced and an layout area of the voltage generator can be reduced. Thus, a nonvolatile semiconductor memory device with a low current consumption and a small chip layout area is provided.
摘要翻译：在非易失性存储单元中，选择晶体管串联连接到存储单元晶体管。选择晶体管形成双层栅极结构，并且每个栅极的电压分别驱动。使用选择晶体管的这些叠层栅极电极层之间的电容耦合，将选择晶体管的栅极电位设置为预定电压电平。可以使由电压发生器对选择晶体管的栅极产生的电压电平的绝对值较小，从而可以减少电流消耗，并且可以减小电压发生器的布局面积。因此，提供了具有低电流消耗和小芯片布局面积的非易失性半导体存储器件。

10. 发明授权

US07503304B2 Internal engine piston and its production method 有权
标题翻译：内置发动机活塞及其生产方法
公开(公告)号：US07503304B2
公开(公告)日：2009-03-17
申请号：US10551645
申请日：2004-03-31
申请人： Koki Otsuka , Seiichi Endo , Takashi Hattori , Masanori Hara , Susumu Katsuragi
发明人： Koki Otsuka , Seiichi Endo , Takashi Hattori , Masanori Hara , Susumu Katsuragi
IPC分类号： F02F3/00
CPC分类号： F02F3/22 , B22D30/00 , C22C38/02 , C22C38/04 , C22C38/42 , C22C38/48 , F02B23/0672 , F02F3/00 , F16J1/01 , Y02T10/125 , Y10T29/49249
摘要： An integrally cast steel piston for internal engines, the cast steel having (a) a composition comprising 0.8% or less of C, 3% or less of Si, 3% or less of Mn,0.2% or less of S, 3% or less of Ni, 6% or less of Cr, 6% or less of Cu, and 0.01-3% of Nb, the balance being substantially Fe and inevitable impurities, or (b) a composition comprising 0.1-0.8% of C, 3% or less of Si, 3% or less of Mn, 0.2% or less of S, 10% or less of Ni, 30% or less of Cr, 6 % or less of Cu, and 0.05-8% of Nb, the balance being substantially Fe and inevitable impurities, by mass.
摘要翻译：一种用于内部发动机的整体铸钢活塞，所述铸钢具有（a）包含C：0.8％或更少的Si，3％或更少的Si，3％或更少的Mn，0.2％或更少的S，3％或较少的Ni，6％或更少的Cr，6％或更少的Cu和0.01-3％的Nb，余量基本上是Fe和不可避免的杂质，或（b）包含0.1-0.8％的C，3 Si％以下，Mn为3％以下，S为0.2％以下，Ni为10％以下，Cr为30％以下，Cu为6％以下，Nb为0.05〜8％，余量基本上为Fe和不可避免的杂质。

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