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1. 发明申请

US20120186519A1 PLASMA DOPING METHOD AND APPARATUS 审中-公开
标题翻译：等离子喷涂方法和装置
公开(公告)号：US20120186519A1
公开(公告)日：2012-07-26
申请号：US13358277
申请日：2012-01-25
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
IPC分类号： C23C16/50
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J2237/2001
摘要： A plasma doping method and apparatus in which a prescribed gas is introduced into a vacuum container while being exhausted by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied to a coil disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.
摘要翻译：一种等离子体掺杂方法和装置，其中将预定气体通过作为排气装置的涡轮分子泵排出而被引入真空容器中。通过压力调节阀将真空容器内的压力保持在规定值。将13.56MHz的高频电力供给到与样品电极相对的电介质窗附近设置的线圈，由此在真空容器内产生感应耦合等离子体。每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

2. 发明申请

US20090233383A1 Plasma Doping Method and Apparatus 审中-公开
标题翻译：等离子体掺杂法和装置
公开(公告)号：US20090233383A1
公开(公告)日：2009-09-17
申请号：US11884924
申请日：2006-02-14
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
IPC分类号： H01L21/66 , B05C11/00
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J2237/2001
摘要： It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.
摘要翻译：旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8，与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

3. 发明申请

US20090035878A1 Plasma Doping Method and Apparatus 审中-公开
标题翻译：等离子体掺杂法和装置
公开(公告)号：US20090035878A1
公开(公告)日：2009-02-05
申请号：US11887359
申请日：2006-03-30
申请人： Yuichiro Sasaki , Tomohiro Okumura , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno
发明人： Yuichiro Sasaki , Tomohiro Okumura , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno
IPC分类号： H01L21/265 , B05C11/00
CPC分类号： H01J37/32935 , H01J37/32412 , H01L21/67115 , H01L22/20 , H01L22/26
摘要： There are provided a plasma doping method and apparatus which is excellent in a repeatability and a controllability of an implanting depth of an impurity to be introduced into a sample or a depth of an amorphous layer.A plasma doping method of generating a plasma in a vacuum chamber and colliding an ion in the plasma with a surface of a sample to modify a surface of a crystal sample to be amorphous, includes the steps of carrying out a plasma irradiation over a dummy sample to perform an amorphizing treatment together with a predetermined number of samples, irradiating a light on a surface of the dummy sample subjected to the plasma irradiation, thereby measuring an optical characteristic of the surface of the dummy sample, and controlling a condition for treating the sample in such a manner that the optical characteristic obtained at the measuring step has a desirable value.
摘要翻译：提供了等离子体掺杂方法和装置，该方法和设备在被引入样品或非晶层的深度中的杂质的注入深度的重复性和可控性方面是优异的。一种在真空室中产生等离子体并将等离子体中的离子与样品的表面相互作用以将晶体样品的表面修饰为无定形的等离子体掺杂方法包括以下步骤：对虚拟样品进行等离子体照射与预定数量的样品一起进行非晶化处理，照射经受等离子体照射的虚拟样品的表面上的光，从而测量虚拟样品的表面的光学特性，并控制处理样品的条件使得在测量步骤获得的光学特性具有期望的值。

4. 发明申请

US20070212837A1 Method And Apparatus Of Fabricating Semiconductor Device 失效
标题翻译：制造半导体器件的方法和装置
公开(公告)号：US20070212837A1
公开(公告)日：2007-09-13
申请号：US11596372
申请日：2005-05-12
申请人： Bunji Mizuno , Yuichiro Sasaki , Ichiro Nakayama , Hiroyuki Ito , Tomohiro Okumura , Cheng-Guo Jin , Katsumi Okashita , Hisataka Kanada
发明人： Bunji Mizuno , Yuichiro Sasaki , Ichiro Nakayama , Hiroyuki Ito , Tomohiro Okumura , Cheng-Guo Jin , Katsumi Okashita , Hisataka Kanada
IPC分类号： H01L21/77
CPC分类号： H01L21/26513 , H01L21/26566 , H01L21/28035 , H01L29/7833
摘要： An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.
摘要翻译：本发明的目的是提供一种半导体器件，其中具有均匀的性质并提供高产率。提供了工艺步骤，其中在随后的工艺步骤的掺杂和退火工艺步骤中调整变化，以便最终消除由干蚀刻引起的衬底中的平面内变化，并且在衬底中提供优异的面内稠度。

5. 发明授权

US08257501B2 Plasma doping device with gate shutter 失效
标题翻译：带闸门的等离子体掺杂装置
公开(公告)号：US08257501B2
公开(公告)日：2012-09-04
申请号：US11887323
申请日：2006-03-29
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
IPC分类号： C23C16/00
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J37/32458 , H01J37/32623 , H01J37/32633
摘要： In a plasma doping device according to the invention, a vacuum chamber (1) is evacuated with a turbo-molecular pump (3) as an exhaust device via a exhaust port 11 while a predetermined gas is being introduced from a gas supply device (2) in order to maintain the inside of the vacuum chamber (1) to a predetermined pressure with a pressure regulating valve (4). A high-frequency power of 13.56 MHz is supplied by a high-frequency power source (5) to a coil (8) provided in the vicinity of a dielectric window (7) opposed to a sample electrode (6) to generate inductive-coupling plasma in the vacuum chamber (1). A high-frequency power source (10) for supplying a high-frequency power to the sample electrode (6) is provided. Uniformity of processing is enhanced by driving a gate shutter (18) and covering a through gate (16).
摘要翻译：在根据本发明的等离子体掺杂装置中，在从气体供应装置（2）引入预定气体的同时，通过排气口11将真空室（1）作为排气装置用涡轮分子泵（3）抽真空），以便通过压力调节阀（4）将真空室（1）的内部保持在预定压力。高频电源（5）将13.56MHz的高频功率提供给设置在与样品电极（6）相对的电介质窗口（7）附近的线圈（8），以产生电感耦合真空室（1）中的等离子体。提供了用于向样品电极（6）提供高频电力的高频电源（10）。通过驱动闸门（18）并覆盖通过门（16）来增强处理的均匀性。

6. 发明授权

US07858479B2 Method and apparatus of fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法和装置
公开(公告)号：US07858479B2
公开(公告)日：2010-12-28
申请号：US11596372
申请日：2005-05-12
申请人： Bunji Mizuno , Yuichiro Sasaki , Ichiro Nakayama , Hiroyuki Ito , Tomohiro Okumura , Cheng-Guo Jin , Katsumi Okashita , Hisataka Kanada
发明人： Bunji Mizuno , Yuichiro Sasaki , Ichiro Nakayama , Hiroyuki Ito , Tomohiro Okumura , Cheng-Guo Jin , Katsumi Okashita , Hisataka Kanada
IPC分类号： H01L21/8234
CPC分类号： H01L21/26513 , H01L21/26566 , H01L21/28035 , H01L29/7833
摘要： An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.
摘要翻译：本发明的目的是提供一种半导体器件，其中具有均匀的性质并提供高产率。提供了工艺步骤，其中在随后的工艺步骤的掺杂和退火工艺步骤中调整变化，以便最终消除由干蚀刻引起的衬底中的平面内变化，并且在衬底中提供优异的面内稠度。

7. 发明授权

US07601619B2 Method and apparatus for plasma processing 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US07601619B2
公开(公告)日：2009-10-13
申请号：US11887821
申请日：2006-04-04
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
IPC分类号： H01L21/31 , H01L21/469 , H01L21/42 , H01J37/32 , C23F4/00
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32412
摘要： A method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port by a turbo-molecular pump while introducing the gas within the vacuum chamber from a gas supply device, and the pressure within the vacuum chamber is kept at a predetermined value by a pressure regulating valve. A high-frequency power supply for a plasma source supplies a high-frequency power to a coil provided near a dielectric window to generate inductively coupled plasma within the vacuum chamber. A high-frequency power supply for the sample electrode for supplying the high-frequency power to the sample electrode is provided. A matching circuit for the sample electrode and a high-frequency sensor are provided between the sample electrode high-frequency power supply and the sample electrode. An ion current applied to the surface of a sample can be accurately monitored buy using the high-frequency sensor and an arithmetic device.
摘要翻译：一种用于等离子体处理的方法和装置，其可以精确地监测施加到样品表面的离子电流。通过涡轮分子泵通过排气口排出预定气体，同时从气体供给装置引入真空室内的气体，并通过压力调节阀将真空室内的压力保持在预定值。用于等离子体源的高频电源为设置在电介质窗附近的线圈提供高频电力，以在真空室内产生电感耦合等离子体。提供了用于向样品电极提供高频电力的样品电极的高频电源。在样品电极高频电源和样品电极之间设置用于样品电极和高频传感器的匹配电路。使用高频传感器和运算装置，可以精确地监视施加到样品表面的离子电流。

8. 发明申请

US20090042321A1 APPARATUS AND METHOD FOR PLASMA DOPING 审中-公开
标题翻译：用于等离子喷涂的装置和方法
公开(公告)号：US20090042321A1
公开(公告)日：2009-02-12
申请号：US12183775
申请日：2008-07-31
申请人： Yuichiro Sasaki , Tomohiro Okumura , Hiroyuki Ito , Keiichi Nakamoto , Katsumi Okashita , Bunji Mizuno
发明人： Yuichiro Sasaki , Tomohiro Okumura , Hiroyuki Ito , Keiichi Nakamoto , Katsumi Okashita , Bunji Mizuno
IPC分类号： H01L21/66 , C23C16/513
CPC分类号： H01J37/32449 , H01J37/32412 , H01J37/3244
摘要： Gas supplied to gas flow passages of a top plate from a gas supply device by gas supply lines forms flow along a vertical direction along a central axis of a substrate, so that the gas blown from gas blow holes can be made to be uniform, and a sheet resistance distribution is rotationally symmetric around a substrate center.
摘要翻译：通过气体供给管线从气体供给装置供给到顶板的气体流路的气体沿着基板的中心轴线沿着垂直方向形成流动，从而能够使从气体吹入孔吹出的气体均匀，薄片电阻分布围绕基板中心旋转对称。

9. 发明申请

US20080061292A1 Method of Doping Impurities, and Electronic Element Using the Same 失效
标题翻译：掺杂杂质的方法和使用它的电子元件
公开(公告)号：US20080061292A1
公开(公告)日：2008-03-13
申请号：US11597166
申请日：2005-05-19
申请人： Cheng-Guo Jin , Yuichiro Sasaki , Bunji Mizuno , Katsumi Okashita , Hiroyuki Ito , Tomohiro Okumura , Satoshi Maeshima , Ichiro Nakayama
发明人： Cheng-Guo Jin , Yuichiro Sasaki , Bunji Mizuno , Katsumi Okashita , Hiroyuki Ito , Tomohiro Okumura , Satoshi Maeshima , Ichiro Nakayama
IPC分类号： H01L29/04 , G21K5/00 , H01L21/66
CPC分类号： H01L21/2236 , H01L21/0276
摘要： The invention provides a method of doping impurities that includes a step of doping impurities in a solid base substance by using a plasma doping method, a step of forming a light antireflection layer that functions to reduce light reflection on the surface of the solid base substance, and a step of performing annealing by light radiation. According to the method, it is possible to reduce the reflectance of light radiated during annealing, to efficiently apply energy an impurity doped layer, to improve activation efficiency, to prevent diffusion, and to reduce sheet resistance of the impurity doped layer.
摘要翻译：本发明提供掺杂杂质的方法，其包括通过使用等离子体掺杂法掺杂固体基质中的杂质的步骤，形成用于减少固体基体物质表面的光反射的光抗反射层的步骤，以及通过光辐射进行退火的步骤。根据该方法，能够降低退火时的光的反射率，有效地施加杂质掺杂层的能量，提高活化效率，防止扩散，降低杂质掺杂层的薄层电阻。

10. 发明申请

US20070190759A1 PLASMA DOPING METHOD 失效
标题翻译：等离子喷涂方法
公开(公告)号：US20070190759A1
公开(公告)日：2007-08-16
申请号：US11741861
申请日：2007-04-30
申请人： Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Tomohiro Okumura
发明人： Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Tomohiro Okumura
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/2236 , H01J37/32412 , H01L29/66795
摘要： A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.
摘要翻译：实现了可以精确控制剂量的等离子体掺杂方法。剂量的面内均匀性得到改善。已经发现，如果通过将B 2 H 2 H 6 / He / He等离子体照射到硅衬底上施加偏压，则存在硼剂量为与能够确保装置控制的可重复性的时间相比，饱和时间比较长，易于稳定地使用。本发明已经确定了结果。也就是说，如果等离子体照射开始，则剂量最初增加，但是持续施加剂量基本上均匀而不依赖于时间变化的时间。此外，如果时间进一步增加，则剂量降低。剂量可以通过在剂量基本均匀的时间的过程窗口中被准确地控制，而不依赖于时间变化。

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