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    • 1. 发明申请
    • Semiconductor Substrate Cleaning Method and Cleaning System
    • 半导体衬底清洁方法和清洁系统
    • US20150279703A1
    • 2015-10-01
    • US14432818
    • 2013-09-30
    • Yuichi OGAWAHaruyoshi YAMAKAWAKurita Water Industries Ltd.
    • Yuichi OgawaHaruyoshi Yamakawa
    • H01L21/67H01L21/02
    • H01L21/67051H01L21/02068H01L21/28518H01L21/32134
    • A method and system for cleaning a semiconductor substrate in which Al is at least partially exposed on a silicon substrate and which is silicided with a metallic substance, without damaging Al and a silicide layer, comprising a cleaning portion (2) for cleaning a semiconductor substrate 100 in which Al is at least partially exposed on a silicon substrate and which is silicided with a metallic substance; a delivery portion (30) disposed in the cleaning portion for delivering a cleaning solution to the semiconductor substrate in the cleaning portion to bring the cleaning solution into contact with the semiconductor substrate; a sulfuric acid solution transfer path (5) connected to the delivery portion for transferring a sulfuric acid solution comprising an oxidant to the delivery portion; and an adsorptive inhibitor solution transfer path (11) connected to the delivery portion for transferring a solution comprising an adsorptive inhibitor having any one or more of N-based, S-based, and P-based polar groups to the delivery portion. The sulfuric acid solution and the adsorptive inhibitor solution may be mixed or separately transferred to come into contact with or on the semiconductor substrate.
    • 一种用于清洁半导体衬底的方法和系统,其中Al至少部分地暴露在硅衬底上并且被金属物质硅化,而不损坏Al和硅化物层,包括用于清洁半导体衬底的清洁部分(2) 100,其中Al至少部分地暴露在硅衬底上并且被金属物质硅化; 设置在清洁部分中的输送部分(30),用于将清洁溶液输送到清洁部分中的半导体衬底,以使清洗溶液与半导体衬底接触; 连接到输送部分的用于将包含氧化剂的硫酸溶液转移到输送部分的硫酸溶液转移路径(5) 以及连接到输送部分的吸附抑制剂溶液转移路径(11),用于将包含具有任何一种或多种N基,S基和P基极性基团的吸附抑制剂的溶液转移到输送部分。 硫酸溶液和吸附抑制剂溶液可以混合或分开转移以与半导体衬底接触或接触。
    • 2. 发明申请
    • METHOD AND SYSTEM FOR CLEANING SEMICONDUCTOR SUBSTRATE
    • 清洁半导体衬底的方法和系统
    • US20150262811A1
    • 2015-09-17
    • US14423270
    • 2013-08-19
    • YUICHI OGAWAHARUYOSHI YAMAKAWA
    • Yuichi OgawaHaruyoshi Yamakawa
    • H01L21/02B08B3/10C25F1/00
    • H01L21/02068B08B3/10B08B3/102C11D3/3947C11D11/0047C11D11/0064C25B1/285C25B15/08C25F1/00H01L21/28088H01L21/32134H01L21/67017
    • A cleaning method including a persulphuric acid producing step of causing a cleaning sulfuric acid solution to travel into an electrolyzing section and to circulate therethrough to produce persulphuric acid having a predetermined concentration by electrolysis in the electrolyzing section, a solution mixing step of mixing the sulfuric acid solution containing the persulphuric acid produced in the persulphuric acid producing step with a halide solution containing one or more types of halide ion without causing the solutions to travel into the electrolyzing section to produce a mixed solution having a post-mixture concentration of oxidant including the persulphuric acid that ranges from 0.001 to 2 mol/L, a heating step of heating the mixed solution, and a cleaning step of cleaning a semiconductor substrate by transporting the heated mixed solution to cause the heated mixed solution to come into contact with the semiconductor substrate.
    • 一种清洗方法,其特征在于,包括使硫酸溶液进入电解部并进行循环的硫酸生产工序,在所述电解部中通过电解生成具有规定浓度的过硫酸的溶液混合工序;将所述硫酸 在含有一种或多种卤化物离子的卤化物溶液中含有在过硫酸生产步骤中产生的过硫酸的溶液,而不会使溶液进入电解部分,以产生具有包含硫化氢的氧化剂的后期浓度的混合溶液 酸,范围为0.001〜2mol / L,加热混合溶液的加热步骤,以及通过输送加热的混合溶液以使加热的混合溶液与半导体基板接触来清洁半导体基板的清洗步骤。
    • 6. 发明申请
    • Ferromagnetic amorphous alloy ribbon with reduced surface protrusions, method of casting and application thereof
    • 具有减小的表面突起的铁磁性非晶合金带,铸造方法及其应用
    • US20120062351A1
    • 2012-03-15
    • US12923224
    • 2010-09-09
    • Eric A. TheisenJames PerroziYuichi OgawaYuji MatsumotoDaichi AzumaRyusuke Hasegawa
    • Eric A. TheisenJames PerroziYuichi OgawaYuji MatsumotoDaichi AzumaRyusuke Hasegawa
    • H01F27/25B22D11/00H01F7/06H01F1/01
    • B22D11/0611B22D11/001H01F1/15308H01F1/15333H01F27/25H01F41/0226Y10T29/49071
    • A ferromagnetic amorphous alloy ribbon includes an alloy having a composition represented by FeaSibBcCd where 80.5≦a≦83 at. %, 0.5≦b≦6 at. %, 12≦c≦16.5 at. %, 0.01≦d≦1 at. % with a+b+c+d=100 and incidental impurities, the ribbon being cast from a molten state of the alloy with a molten alloy surface tension of greater than or equal to 1.1 N/m on a chill body surface; the ribbon having a ribbon length, a ribbon thickness, and a ribbon surface facing the chill body surface; the ribbon having ribbon surface protrusions being formed on the ribbon surface facing the chill body surface; the ribbon surface protrusions being measured in terms of a protrusion height and a number of protrusions; the protrusion height exceeding 3 μm and less than four times the ribbon thickness, and the number of protrusions being less than 10 within 1.5 m of the cast ribbon length; and the alloy ribbon in its annealed straight strip form having a saturation magnetic induction exceeding 1.60 T and exhibiting a magnetic core loss of less than 0.14 W/kg when measured at 60 Hz and at 1.3 T induction level in its annealed straight strip form. The ribbon is suitable for transformer cores, rotational machines, electrical chokes, magnetic sensors, and pulse power devices.
    • 铁磁非晶合金带包括具有由FeaSibBcCd表示的组成的合金,其中80.5< 1; a≦̸ 83 at。 %,0.5≦̸ b≦̸ 6 at。 %,12≦̸ c≦̸ 16.5 at。 %,0.01≦̸ d≦̸ 1 at。 %+ a + b + c + d = 100和偶然的杂质,该带从合金的熔融状态浇铸,熔融合金的表面张力大于或等于1.1N / m; 所述带具有带长度,带厚度和面向所述冷却体表面的带状表面; 所述带状带表面突起形成在所述带状表面上面向所述冷却体表面; 根据突出高度和突出数量来测量带状表面突起; 突出高度超过3μm且小于带厚度的四倍,并且在铸带长度的1.5μm内的突起数量小于10; 并且其退火的直条形状的合金带形状具有超过1.60T的饱和磁感应,并且在其退火的直条形式下以60Hz和1.3T的感应电平测量时,磁芯损耗小于0.14W / kg。 该带适用于变压器铁芯,旋转机,电扼流圈,磁传感器和脉冲功率器件。
    • 7. 发明申请
    • Ferromagnetic amorphous alloy ribbon and fabrication thereof
    • 铁磁非晶合金带及其制造
    • US20120049992A1
    • 2012-03-01
    • US12923076
    • 2010-08-31
    • Daichi AzumaRyusuke HasegawaYuichi OgawaEric A. TheisenYuji Matsumoto
    • Daichi AzumaRyusuke HasegawaYuichi OgawaEric A. TheisenYuji Matsumoto
    • H01F27/25B22D11/00H01F1/153
    • B22D11/0611H01F1/15308H01F1/15333H01F27/25H01F41/0226
    • A ferromagnetic amorphous alloy ribbon includes an alloy having a composition represented by FeaSibBcCd where 80.5≦a≦83 at. %, 0.5≦b≦6 at. %, 12≦c≦16.5 at. %, 0.01≦d≦1 at. % with a+b+c+d=100 and incidental impurities; the ribbon being cast from a molten state of the alloy, with a molten alloy surface tension of greater than or equal to 1.1 N/m; the defect length along a direction of the ribbon's length being between 5 mm and 200 mm, the defect depth being less than 0.4×t μm and the defect occurrence frequency being less than 0.05×w times within 1.5 m of ribbon length, where t is the ribbon thickness and w is the ribbon width, and the ribbon having a saturation magnetic induction exceeding 1.60 T and exhibiting a magnetic core loss of less than 0.14 W/kg when measured at 60 Hz and at 1.3 T induction level in an annealed straight strip form, and a core magnetic loss of less than 0.3 W/kg and an exciting power of less than 0.4 VA/kg in an annealed wound transformer core form. The ribbon is suitable for use in transformer cores, rotational machines, electrical chokes, magnetic sensors and pulse power devices.
    • 铁磁非晶合金带包括具有由FeaSibBcCd表示的组成的合金,其中80.5< 1; a≦̸ 83 at。 %,0.5≦̸ b≦̸ 6 at。 %,12≦̸ c≦̸ 16.5 at。 %,0.01≦̸ d≦̸ 1 at。 %+ a + b + c + d = 100和杂质; 该钢带从合金的熔融状态铸造,熔融合金表面张力大于或等于1.1N / m; 沿着带长度的方向的缺陷长度在5mm和200mm之间,缺陷深度小于0.4×tμm,缺陷发生频率在丝带长度的1.5μm内小于0.05×w倍,其中t是 带状厚度和w是带宽,并且具有超过1.60T的饱和磁感应的带,并且在退火的直条中以60Hz和1.3T的感应水平测量时,磁芯损耗小于0.14W / kg 形式,并且在退火的卷绕变压器铁芯形式中的小于0.3W / kg的磁芯损耗和小于0.4VA / kg的激励功率。 该带适用于变压器铁芯,旋转机,电扼流圈,磁传感器和脉冲功率器件。