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1. 发明授权

US07684453B2 Surface light emitting semiconductor laser element 有权
标题翻译：表面发光半导体激光元件
公开(公告)号：US07684453B2
公开(公告)日：2010-03-23
申请号：US10847904
申请日：2004-05-18
申请人： Yoshiaki Watanabe , Hironobu Narui , Yuichi Kuromizu , Yoshinori Yamauchi , Yoshiyuki Tanaka
发明人： Yoshiaki Watanabe , Hironobu Narui , Yuichi Kuromizu , Yoshinori Yamauchi , Yoshiyuki Tanaka
IPC分类号： H01S5/00
CPC分类号： G02B6/4296 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18311 , H01S5/18388 , H01S5/18394 , H01S5/2214 , H01S5/32308 , H01S2301/18 , H01S2301/203
摘要： A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.
摘要翻译：一种表面发光半导体激光元件，包括基板，包括设置在基板上的半导体多层的下反射器，设置在下反射器上的有源层，包括设置在有源层上的半导体多层的上反射器，化合物半导体层，具有用于暴露上反射体并在上反射体上方延伸的第一开口，以及具有第二开口的金属膜，用于暴露设置在第一开口内部并在化合物半导体层上方延伸的上反射体，其中金属膜和化合物半导体层构成复合折射率分布结构，其中复数折射率从第二开口的中心朝向外部改变。还提供了以单峰横向模式发射激光的方法。

2. 发明申请

US20050014387A1 Steam oxidation method 失效
标题翻译：蒸汽氧化法
公开(公告)号：US20050014387A1
公开(公告)日：2005-01-20
申请号：US10871900
申请日：2004-06-18
申请人： Yoshiyuki Tanaka , Hironobu Narui , Yoshinori Yamauchi , Yuichi Kuromizu , Yoshiaki Watanabe
发明人： Yoshiyuki Tanaka , Hironobu Narui , Yoshinori Yamauchi , Yuichi Kuromizu , Yoshiaki Watanabe
IPC分类号： C23C8/02 , C23C8/16 , H01L21/316 , C23C8/10 , H01L21/331
CPC分类号： H01L21/02178 , C23C8/02 , C23C8/16 , H01L21/02233 , H01L21/02255 , H01L21/31666
摘要： This invention provides a steam oxidation method of a matter to be oxidized with proper controllability and reproducibility. It is provided a steam oxidation method, where a semiconductor substrate (a matter to be oxidized) is housed in a steam oxidation reactor, which comprises: a step of supplying N2 gas to the reactor housing the semiconductor substrate and substituting the inside of the reactor with N2 gas; a step of stopping supply of the N2 gas and supplying a steam-accompanied N2 gas, in which the N2 gas is accompanied with steam, to the reactor; a step of increasing a temperature of the semiconductor substrate to 450° C. (a steam oxidation temperature) while supplying the steam-accompanied N2 gas; and a subsequent step of holding the semiconductor substrate for a predetermined time at 450° C.
摘要翻译：本发明提供了一种具有适当可控性和再现性的待氧化物质的蒸汽氧化方法。提供一种蒸汽氧化方法，其中将半导体衬底（待氧化的物质）容纳在蒸汽氧化反应器中，其包括：将N 2气体供应到容纳半导体衬底并置换反应器内部的反应器的步骤用N2气; 停止供给N 2气体并将N2气伴随有蒸汽的蒸气伴随的N 2气体供给到反应器的步骤; 同时提供伴随蒸气的N 2气体的半导体衬底的温度升高至450℃（蒸汽氧化温度）的步骤; 以及在450℃下将半导体衬底保持预定时间的后续步骤。

3. 发明申请

US20090137076A1 SURFACE EMITTING SEMICONDUCTOR LASER, ITS MANUFACTURING METHOD, AND MANUFACTURING METHOD OF ELECTRON DEVICE 失效
标题翻译：表面发射半导体激光器及其制造方法和电子器件的制造方法
公开(公告)号：US20090137076A1
公开(公告)日：2009-05-28
申请号：US12263612
申请日：2008-11-03
申请人： Yoshiaki Watanabe , Hironobu Narui , Yuichi Kuromizu , Yoshinori Yamauchi , Yoshiyuki Tanaka
发明人： Yoshiaki Watanabe , Hironobu Narui , Yuichi Kuromizu , Yoshinori Yamauchi , Yoshiyuki Tanaka
IPC分类号： H01L21/26
CPC分类号： H01S5/18388 , H01S5/0421 , H01S5/18311 , H01S5/18394 , H01S2301/166
摘要： A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlwGa1-wAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.
摘要翻译：提供了能够像单一横向模式那样在单个峰值波束中进行激光振荡的表面发射半导体激光器和能够以高产率容易地制造这种激光器的制造方法。当在n型半导体衬底上形成具有柱型台面结构的表面发射半导体激光器时，形成台面部分，直到形成p侧电极和n侧电极。此后，在p侧和n侧电极之间施加电压，并且在提取输出光的同时对激光进行蒸汽气氛，从而在作为顶层的p型AlwGa1-wAs层上形成Al氧化物层 p型DBR层，并且形成类似于凹透镜的折射率分布。

4. 发明申请

US20070091966A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20070091966A1
公开(公告)日：2007-04-26
申请号：US11613608
申请日：2006-12-20
申请人： Tomonori Hino , Hironobu Narui , Takayuki Kawasumi , Tsuyoshi Nagatake , Yuichi Kuromizu , Tadahiko Kawasaki , Noriko Kobayashi , Masaki Shiozaki , Jugo Mitomo , Michiko Komine
发明人： Tomonori Hino , Hironobu Narui , Takayuki Kawasumi , Tsuyoshi Nagatake , Yuichi Kuromizu , Tadahiko Kawasaki , Noriko Kobayashi , Masaki Shiozaki , Jugo Mitomo , Michiko Komine
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01L33/145 , H01S5/0021 , H01S5/22 , H01S5/2215 , H01S5/2231 , H01S5/34326 , H01S2301/14 , H01S2301/18
摘要： A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof. The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

5. 发明授权

US07006544B2 Plane emission type semiconductor laser device and method of manufacturing the same 有权
标题翻译：平面发射型半导体激光器件及其制造方法
公开(公告)号：US07006544B2
公开(公告)日：2006-02-28
申请号：US10835692
申请日：2004-04-30
申请人： Yuichi Kuromizu , Hironobu Narui , Yoshinori Yamauchi , Yoshiyuki Tanaka , Yoshiaki Watanabe
发明人： Yuichi Kuromizu , Hironobu Narui , Yoshinori Yamauchi , Yoshiyuki Tanaka , Yoshiaki Watanabe
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/18311 , H01S5/305 , H01S5/343 , H01S2301/166
摘要： A plane emission type semiconductor laser device includes, on an n-type GaAs stepped substrate, a laminate structure of a lower reflector, a lower clad layer, an active layer, an upper clad layer, an upper reflector, and a p-type contact layer. The stepped substrate includes a circular (100) plane upper level portion, a step portion, and an annular (100) plane lower level portion surrounding the upper level portion with the step portion therebetween. When an AlAs layer is grown as a current confinement layer on the stepped substrate while implanting Si as an n-type impurity into the AlAs layer being grown, the impurity concentration in the AlAs layer on the upper side of the upper level portion is higher than that on the upper side of the step portion, and the oxidation rate of the AlAs layer on the upper side of the upper level portion is lower than that on the upper side of the step portion, so that the progress of oxidation of the AlAs layer on the upper side of the upper level portion is autonomously restrained. By time control of the oxidation reaction of the AlAs layer, it is possible to maintain the circular AlAs layer on the upper side of the upper level portion in an unoxidized state with an accurate shape and an accurate area.
摘要翻译：平面发射型半导体激光器件在n型GaAs阶梯式衬底上包括下反射器，下覆层，有源层，上覆层，上反射器和p型接触层的层叠结构层。台阶式基板包括圆形（100）平面上部分，台阶部分和围绕上部部分的环形（100）平面下部部分，其间具有台阶部分。当AlAs层在阶梯状衬底上生长为电流限制层，同时将Si作为n型杂质注入到正在生长的AlAs层中时，上层部分上侧的AlAs层中的杂质浓度高于在台阶部的上侧，上层部的上侧的AlAs层的氧化速度低于台阶部的上侧的氧化速度，使得AlAs层的氧化进程在上层部分的上侧被自主地限制。通过对AlAs层的氧化反应进行时间控制，可以将具有精确形状和准确面积的未上氧化状态的上层部分的上侧的圆形AlAs层维持在一起。

6. 发明申请

US20080173885A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20080173885A1
公开(公告)日：2008-07-24
申请号：US11676355
申请日：2007-02-19
申请人： Yuichi Kuromizu
发明人： Yuichi Kuromizu
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/405 , H01L33/0079
摘要： A semiconductor light-emitting device includes: a semiconductor layer including a light-emitting region and having an emission surface on its surface; an insulating layer arranged on a surface of the semiconductor layer opposite to; a first metal layer deposited on a surface of the insulating layer opposite to a surface where the semiconductor layer is arranged; a contact portion buried in a part of the insulating layer, the contact portion electrically connecting the semiconductor layer and the first metal layer; and a second metal layer having higher reflectivity with respect to a light-emitting wavelength than the first metal layer, the second metal layer arranged on a surface of the first metal layer opposite to a surface where the insulating layer is arranged, wherein a metal of which the first metal layer is made has higher adhesion to the insulating layer than a metal of which the second layer is made.
摘要翻译：半导体发光器件包括：包括发光区域并在其表面上具有发射表面的半导体层; 绝缘层，布置在与所述半导体层相对的表面上; 沉积在绝缘层的与半导体层布置的表面相对的表面上的第一金属层; 埋置在所述绝缘层的一部分中的接触部，所述接触部电连接所述半导体层和所述第一金属层; 以及相对于发光波长具有比第一金属层更高的反射率的第二金属层，所述第二金属层布置在与布置绝缘层的表面相对的第一金属层的表面上，其中金属与制造第二层的金属相比，制成第一金属层的绝缘层的粘合性更高。

7. 发明授权

US07332744B2 Semiconductor light-emitting device and method of manufacturing the same 失效
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US07332744B2
公开(公告)日：2008-02-19
申请号：US10983927
申请日：2004-11-08
申请人： Tomonori Hino , Hironobu Narui , Takayuki Kawasumi , Tsuyoshi Nagatake , Yuichi Kuromizu , Tadahiko Kawasaki , Noriko Kobayashi , Masaki Shiozaki , Jugo Mitomo , Michiko Komine
发明人： Tomonori Hino , Hironobu Narui , Takayuki Kawasumi , Tsuyoshi Nagatake , Yuichi Kuromizu , Tadahiko Kawasaki , Noriko Kobayashi , Masaki Shiozaki , Jugo Mitomo , Michiko Komine
IPC分类号： H01L27/15 , H01S5/00
CPC分类号： B82Y20/00 , H01L33/145 , H01S5/0021 , H01S5/22 , H01S5/2215 , H01S5/2231 , H01S5/34326 , H01S2301/14 , H01S2301/18
摘要： A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.
摘要翻译：提供能够提高诸如寿命和可靠性的器件特性的半导体发光器件。电流限制层包括对应于有源层中的电流注入区域的AlAs等构成的非氧化区域和对应于非电流注入区域的氧化铝制成的氧化区域。通过形成由AlAs等构成的非氧化层，然后在240℃至小于375℃的温度下氧化未氧化层的部分形成氧化区域。氧化区域的厚度为优选为10nm〜1000nm。氧化区域的一侧的宽度为非氧化区域的宽度的一倍以上或其以上的七倍以下。电流限制层与有源层之间的距离优选为50nm以上或500nm以下以下，更优选为180nm以上。

8. 发明授权

US07001851B2 Steam oxidation method 失效
标题翻译：蒸汽氧化法
公开(公告)号：US07001851B2
公开(公告)日：2006-02-21
申请号：US10871900
申请日：2004-06-18
申请人： Yoshiyuki Tanaka , Hironobu Narui , Yoshinori Yamauchi , Yuichi Kuromizu , Yoshiaki Watanabe
发明人： Yoshiyuki Tanaka , Hironobu Narui , Yoshinori Yamauchi , Yuichi Kuromizu , Yoshiaki Watanabe
IPC分类号： H01I21/31 , H01L21/469
CPC分类号： H01L21/02178 , C23C8/02 , C23C8/16 , H01L21/02233 , H01L21/02255 , H01L21/31666
摘要： This invention provides a steam oxidation method of a matter to be oxidized with proper controllability and reproducibility. It is provided a steam oxidation method, where a semiconductor substrate (a matter to be oxidized) is housed in a steam oxidation reactor and is subjected to: a first step of supplying N2 gas to the reactor housing the semiconductor substrate and substituting the inside of the reactor with N2 gas; a second step of stopping supply of the N2 gas and supplying a steam-accompanied N2 gas, in which the N2 gas is accompanied with steam, to the reactor; a third step of increasing a temperature of the semiconductor substrate to 450° C. (a steam oxidation temperature) while supplying the steam-accompanied N2 gas; and a fourth step of holding the semiconductor substrate for a predetermined time at 450° C.
摘要翻译：本发明提供了一种具有适当可控性和再现性的待氧化物质的蒸汽氧化方法。提供一种蒸汽氧化法，其中将半导体衬底（待氧化的物质）容纳在蒸汽氧化反应器中，并经受：向反应器壳体供应N 2气体的第一步骤半导体衬底并用N 2气体代替反应器内部; 第二步骤是停止供应N 2气体并供应伴随着N 2气体的蒸气伴随的N 2气体，其中伴随着N 2气体用蒸汽，到反应器; 在提供伴随蒸汽的N 2气体的同时，将半导体衬底的温度升高至450℃（蒸汽氧化温度）的第三步骤; 以及在450℃下将半导体衬底保持预定时间的第四步骤。

9. 发明申请

US20050271106A1 Surface emitting semiconductor laser, its manufacturing method, and manufacturing method of electron device 失效
标题翻译：表面发射半导体激光器，其制造方法和电子器件的制造方法
公开(公告)号：US20050271106A1
公开(公告)日：2005-12-08
申请号：US11143806
申请日：2005-06-02
申请人： Yoshiaki Watanabe , Hironobu Narui , Yuichi Kuromizu , Yoshinori Yamauchi , Yoshiyuki Tanaka
发明人： Yoshiaki Watanabe , Hironobu Narui , Yuichi Kuromizu , Yoshinori Yamauchi , Yoshiyuki Tanaka
IPC分类号： H01L21/316 , H01L21/338 , H01L29/778 , H01L29/812 , H01S5/00 , H01S5/042 , H01S5/18 , H01S5/183 , H01S5/22
CPC分类号： H01S5/18388 , H01S5/0421 , H01S5/18311 , H01S5/18394 , H01S2301/166
摘要： A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlwGa1-wAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.
摘要翻译：提供了能够像单一横向模式那样在单个峰值波束中进行激光振荡的表面发射半导体激光器和能够以高产率容易地制造这种激光器的制造方法。当在n型半导体衬底上形成具有柱型台面结构的表面发射半导体激光器时，形成台面部分，直到形成p侧电极和n侧电极。此后，在p侧和n侧电极之间施加电压，并且在提取输出光的同时对激光进行蒸汽气氛，从而在p型Al 2 O 3上形成Al氧化物层， Ga 1-w作为p型DBR层的顶层的层，并形成像凹透镜的折射率分布。

10. 发明申请

US20050078726A1 Vertical-cavity surface-emitting laser device array and method of manufacturing the same 有权
标题翻译：垂直腔表面发射激光器件阵列及其制造方法
公开(公告)号：US20050078726A1
公开(公告)日：2005-04-14
申请号：US10944386
申请日：2004-09-17
申请人： Yoshiaki Watanabe , Hironobu Narui , Yoshinori Yamauchi , Yuichi Kuromizu , Yoshiyuki Tanaka
发明人： Yoshiaki Watanabe , Hironobu Narui , Yoshinori Yamauchi , Yuichi Kuromizu , Yoshiyuki Tanaka
IPC分类号： H01S5/00 , H01S5/183 , H01S5/20 , H01S5/343 , H01S5/40 , H01S5/42
CPC分类号： B82Y20/00 , H01S5/02284 , H01S5/18311 , H01S5/18338 , H01S5/18344 , H01S5/34313 , H01S5/4012 , H01S5/4087 , H01S5/423 , H01S2301/166
摘要： A plurality of vertical-cavity surface-emitting laser devices each having a different lasing wavelength are arrayed by a simple structure and a manufacturing process without increasing device resistance. Each vertical-cavity surface-emitting laser device comprises a layered structure including an active layer and a current confinement layer. The area of current confinement portion in the laminate structures is set corresponding to a wavelength of laser light emitted from each vertical-cavity surface-emitting laser device. Thereby, the plurality of vertical-cavity surface-emitting laser devices emits laser light with different lasing wavelengths.
摘要翻译：通过简单的结构和制造工艺排列具有不同激光波长的多个垂直腔表面发射激光器件，而不增加器件电阻。每个垂直腔表面发射激光器件包括包括有源层和电流限制层的分层结构。层叠结构中的电流限制部分的面积对应于从每个垂直腔表面发射激光器件发射的激光的波长设定。因此，多个垂直腔表面发射激光器件发射具有不同激光波长的激光。

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