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    • 2. 发明授权
    • Doped stoichiometric lithium niobate crystals and method for high-speed holographic data storage
    • 掺杂的化学计量的铌酸锂晶体和用于高速全息数据存储的方法
    • US06906835B1
    • 2005-06-14
    • US10841681
    • 2004-05-10
    • Xuewu XuSanjeev SolankiTow Chong Chong
    • Xuewu XuSanjeev SolankiTow Chong Chong
    • G03H1/02G03H1/26G11B7/0065G11B7/243G11C13/04
    • G11B7/2433G03H1/02G03H2260/54G11B7/0065G11B2007/24304G11B2007/24306G11C13/045
    • The present invention discloses a recording medium comprising an improved doped Stoichiometric Lithium Niobate (SLN) crystal for high-speed holographic data storage. The improved doped SLN has an extremely high optical damage resistance of more than 145 kW/cm2 for power density of an incident laser beam along the c axis. The Recording time using the present improved doped SLN is advantageously very short and is about 1 second for a single hologram with a saturated diffraction efficiency of 28.7% at a recording laser beam density of 70 W/cm2. Reliable retrieval of a signal-image written at as low as 1 milliseconds has been performed in the Z-cut doped SLN. The present recording medium is an improved doped SLN of a Z-cut SLN crystal doped with Iron (Fe) and Terbium (Tb). The Terbium (Tb) content within the fluxed melts for growing the improved doped SLN ranges from 10 ppm to 140 ppm.
    • 本发明公开了一种记录介质,包括用于高速全息数据存储的改进的掺杂的化学计量的铌酸锂(SLN)晶体。 对于沿着c轴的入射激光束的功率密度,改进的掺杂SLN具有大于145kW / cm 2的极高的光学损伤电阻。 使用本改进的掺杂SLN的记录时间有利地非常短,对于在70W / cm 2的记录激光束密度下具有28.7%的饱和衍射效率的单个全息图,为约1秒。 在Z切割掺杂SLN中已经执行了在低至1毫秒写入的信号图像的可靠检索。 本记录介质是掺杂有铁(Fe)和铽(Tb)的Z切割SLN晶体的改进的掺杂SLN。 用于生长改进的掺杂SLN的助熔熔体中的铽(Tb)含量范围为10ppm至140ppm。