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1. 发明授权

US09222994B2 Perpendicular spin torque oscillator FMR frequency measurement method 有权
标题翻译：垂直自旋转矩振荡器FMR频率测量方法
公开(公告)号：US09222994B2
公开(公告)日：2015-12-29
申请号：US13200148
申请日：2011-09-19
申请人： Yuchen Zhou , Kunliang Zhang , Min Li , Kenichi Takano , Joe Smyth , Moris Dovek , Akihiko Takeo , Tomomi Funayama , Masahiro Takashita , Masayuki Takagishi
发明人： Yuchen Zhou , Kunliang Zhang , Min Li , Kenichi Takano , Joe Smyth , Moris Dovek , Akihiko Takeo , Tomomi Funayama , Masahiro Takashita , Masayuki Takagishi
IPC分类号： G01R23/02 , G01R33/12 , G11B5/39 , H01L43/08 , G11C11/16
CPC分类号： G01R33/1284 , G11B5/3903 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L43/08
摘要： A method for measuring the frequency in a spin torque oscillator having at least a magnetic oscillation layer (MOL), junction layer, and magnetic reference layer (MRL) is disclosed. In a first embodiment, a small in-plane magnetic field is applied to the STO after a DC current is applied to excite the MOL into an oscillation state. The MRL has a perpendicular magnetization that is tilted slightly to give an in-plane magnetization component to serve as a reference layer for measuring the oscillation frequency of the MOL in-plane magnetization component. An AC voltage change is produced in the DC current as a result of variable STO resistance and directly correlates to MOL oscillation frequency. Alternatively, a field having both perpendicular and in-plane components may be applied externally or by forming the STO between two magnetic poles thereby producing an in-plane magnetization reference component in the MRL.
摘要翻译：公开了一种用于测量至少具有磁振荡层（MOL），结层和磁参考层（MRL）的自旋转矩振荡器中的频率的方法。在第一实施例中，在施加DC电流以将MOL激发到振荡状态之后，将小的面内磁场施加到STO。 MRL具有稍微倾斜的垂直磁化，以产生面内磁化分量，用作用于测量MOL面内磁化分量的振荡频率的参考层。作为可变STO电阻的结果，在DC电流中产生AC电压变化，并直接与MOL振荡频率相关。或者，具有垂直和平面内部分量的场可以在外部施加，或者通过在两个磁极之间形成STO，从而在MRL中产生面内磁化参考分量。

2. 发明申请

US20130069626A1 Perpendicular spin torque oscillator FMR frequency measurement method 有权
公开(公告)号：US20130069626A1
公开(公告)日：2013-03-21
申请号：US13200148
申请日：2011-09-19
申请人： Yuchen Zhou , Kunliang Zhang , Min Li , Kenichi Takano , Joe Smyth , Moris Dovek , Akihiko Takeo , Tomomi Funayama , Masahiro Takashita , Masayuki Takagishi
发明人： Yuchen Zhou , Kunliang Zhang , Min Li , Kenichi Takano , Joe Smyth , Moris Dovek , Akihiko Takeo , Tomomi Funayama , Masahiro Takashita , Masayuki Takagishi
IPC分类号： G01R23/02
CPC分类号： G01R33/1284 , G11B5/3903 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L43/08
摘要： A method for measuring the frequency in a spin torque oscillator having at least a magnetic oscillation layer (MOL), junction layer, and magnetic reference layer (MRL) is disclosed. In a first embodiment, a small in-plane magnetic field is applied to the STO after a DC current is applied to excite the MOL into an oscillation state. The MRL has a perpendicular magnetization that is tilted slightly to give an in-plane magnetization component to serve as a reference layer for measuring the oscillation frequency of the MOL in-plane magnetization component. An AC voltage change is produced in the DC current as a result of variable STO resistance and directly correlates to MOL oscillation frequency. Alternatively, a field having both perpendicular and in-plane components may be applied externally or by forming the STO between two magnetic poles thereby producing an in-plane magnetization reference component in the MRL.

3. 发明授权

US08477453B2 Perpendicular magnetic recording write head with milling defined track width 有权
标题翻译：垂直磁记录写头具有铣削定义的轨道宽度
公开(公告)号：US08477453B2
公开(公告)日：2013-07-02
申请号：US12799927
申请日：2010-05-05
申请人： Kenichi Takano , Yuchen Zhou , Min Li , Joe Smyth
发明人： Kenichi Takano , Yuchen Zhou , Min Li , Joe Smyth
IPC分类号： G11B5/31
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/314 , G11B5/315 , G11B5/3163 , G11B2005/0024
摘要： A main pole layer having at least a leading taper and trimmed pole tip portion is described. The leading taper increases head field up to ≧15000 Oe even for narrow track widths approaching 50 nm. For MAMR applications, a STO and trailing shield are sequentially formed on a trailing pole tip side. Furthermore, full side shields may be added to reduce fringing field. Another embodiment involves including both of a leading taper and trailing taper at the pole tip where leading taper angle is between 20° and 60° and trailing taper angle is from 10° to 45°. A method is provided for forming various embodiments of the present invention. A key feature is that milling depth at an effective neck height distance is greater than or equal to the pole tip thickness. A self aligned STO may be formed by the same ion milling step that defines track width.
摘要翻译：描述了至少具有前导锥形和微调极尖部分的主极层。即使对于接近50nm的窄轨道宽度，领先的锥形也增加了头部场>达15000 Oe。对于MAMR应用，STO和后屏蔽依次形成在尾极端侧。此外，可以添加全侧屏蔽以减少边缘场。另一实施例涉及在极尖处包括前导锥形和后锥形两者，其中前锥度角在20°至60°之间，后锥角度为10°至45°。提供了一种用于形成本发明的各种实施例的方法。一个关键特征是在有效颈部高度距离处的铣削深度大于或等于极尖厚度。可以通过定义轨道宽度的相同离子铣削步骤形成自对准STO。

4. 发明申请

US20110273800A1 Perpendicular magnetic recording write head with milling defined track width 有权
标题翻译：垂直磁记录写头具有铣削定义的轨道宽度
公开(公告)号：US20110273800A1
公开(公告)日：2011-11-10
申请号：US12799927
申请日：2010-05-05
申请人： Kenichi Takano , Yuchen Zhou , Min Li , Joe Smyth
发明人： Kenichi Takano , Yuchen Zhou , Min Li , Joe Smyth
IPC分类号： G11B5/127 , C23C14/46
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/314 , G11B5/315 , G11B5/3163 , G11B2005/0024
摘要： A main pole layer having at least a leading taper and trimmed pole tip portion is described. The leading taper increases head field up to ≧15000 Oe even for narrow track widths approaching 50 nm. For MAMR applications, a STO and trailing shield are sequentially formed on a trailing pole tip side. Furthermore, full side shields may be added to reduce fringing field. Another embodiment involves including both of a leading taper and trailing taper at the pole tip where leading taper angle is between 20° and 60° and trailing taper angle is from 10° to 45°. A method is provided for forming various embodiments of the present invention. A key feature is that milling depth at an effective neck height distance is greater than or equal to the pole tip thickness. A self aligned STO may be formed by the same ion milling step that defines track width.
摘要翻译：描述了至少具有前导锥形和微调极尖部分的主极层。即使对于接近50nm的窄轨道宽度，前导锥形也增加了顶场至≧15000 Oe。对于MAMR应用，STO和后屏蔽依次形成在尾极端侧。此外，可以添加全侧屏蔽以减少边缘场。另一实施例涉及在极尖处包括前导锥形和后锥形两者，其中前锥度角在20°至60°之间，后锥角度为10°至45°。提供了一种用于形成本发明的各种实施例的方法。一个关键特征是在有效颈部高度距离处的铣削深度大于或等于极尖厚度。可以通过定义轨道宽度的相同离子铣削步骤形成自对准STO。

5. 发明授权

US08031441B2 CPP device with an enhanced dR/R ratio 有权
标题翻译：具有增强的dR / R比的CPP装置
公开(公告)号：US08031441B2
公开(公告)日：2011-10-04
申请号：US11803057
申请日：2007-05-11
申请人： Kunliang Zhang , Min Li , Moris Dovek , Yue Liu
发明人： Kunliang Zhang , Min Li , Moris Dovek , Yue Liu
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer ≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.
摘要翻译：公开了具有由至少一个金属（M）层和至少一个半导体或半金属（S）层组成的复合间隔层的CPP-GMR自旋阀。复合间隔物可以具有M / S，S / M，M / S / M，S / M / S，M / S / M / S / M或多层（M / S / M）是整数≧1。钉扎层优选具有AP2 /耦合/ AP1配置，其中AP2部分是由CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z）表示的FCC三层，其中y为0至60原子％，z为75〜100原子％。在一个实施方案中，M是厚度为0.5至50埃的Cu，S是厚度为1至50埃的ZnO。 S层可以掺杂有一个或多个元素。自旋阀的dR / R比提高到10％以上，同时保持可接受的EM和RA性能。

6. 发明申请

US20120009337A1 Novel CPP device with an enhanced dR/R ratio 审中-公开
标题翻译：具有增强的dR / R比的新型CPP装置
公开(公告)号：US20120009337A1
公开(公告)日：2012-01-12
申请号：US13200013
申请日：2011-09-15
申请人： Kunliang Zhang , Min Li , Moris Dovek , Yue Liu
发明人： Kunliang Zhang , Min Li , Moris Dovek , Yue Liu
IPC分类号： G11B5/31 , C23C14/34
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.
摘要翻译：公开了具有由至少一个金属（M）层和至少一个半导体或半金属（S）层组成的复合间隔层的CPP-GMR自旋阀。复合间隔物可以具有M / S，S / M，M / S / M，S / M / S，M / S / M / S / M或多层（M / S / M）是整数≧1。钉扎层优选具有AP2 /耦合/ AP1配置，其中AP2部分是由CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z）表示的FCC三层，其中y为0至60原子％，z为75〜100原子％。在一个实施方案中，M是厚度为0.5至50埃的Cu，S是厚度为1至50埃的ZnO。 S层可以掺杂有一个或多个元素。自旋阀的dR / R比提高到10％以上，同时保持可接受的EM和RA性能。

7. 发明授权

US08978240B2 Method of forming a spin valve structure with a composite spacer in a magnetic read head 有权
标题翻译：在磁读头中用复合间隔物形成自旋阀结构的方法
公开(公告)号：US08978240B2
公开(公告)日：2015-03-17
申请号：US13200013
申请日：2011-09-15
申请人： Kunliang Zhang , Min Li , Moris Dovek , Yue Liu
发明人： Kunliang Zhang , Min Li , Moris Dovek , Yue Liu
IPC分类号： G11B5/127 , H04R31/00 , G11B5/39 , B82Y10/00 , B82Y25/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.
摘要翻译：公开了具有由至少一个金属（M）层和至少一个半导体或半金属（S）层组成的复合间隔层的CPP-GMR自旋阀。复合间隔物可以具有M / S，S / M，M / S / M，S / M / S，M / S / M / S / M或多层（M / S / M）是整数≧1。钉扎层优选具有AP2 /耦合/ AP1配置，其中AP2部分是由CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z）表示的FCC三层，其中y为0至60原子％，z为75〜100原子％。在一个实施方案中，M是厚度为0.5至50埃的Cu，S是厚度为1至50埃的ZnO。 S层可以掺杂有一个或多个元素。自旋阀的dR / R比提高到10％以上，同时保持可接受的EM和RA性能。

8. 发明申请

US20080278864A1 Novel CPP device with an enhanced dR/R ratio 有权
标题翻译：具有增强的dR / R比的新型CPP装置
公开(公告)号：US20080278864A1
公开(公告)日：2008-11-13
申请号：US11803057
申请日：2007-05-11
申请人： Kunliang Zhang , Min Li , Moris Dovek , Yue Liu
发明人： Kunliang Zhang , Min Li , Moris Dovek , Yue Liu
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer ≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.
摘要翻译：公开了具有由至少一个金属（M）层和至少一个半导体或半金属（S）层组成的复合间隔层的CPP-GMR自旋阀。复合间隔物可以具有M / S，S / M，M / S / M，S / M / S，M / S / M / S / M或多层（M / S / M）配置，其中n是整数> = 1。被钉扎层优选具有AP2 /偶联/ AP1构型，其中AP2部分是由CoZi Fe（100-Z）/ Fe Y 其中y为0至60原子％，以及（C 1 -C 6） z为75〜100原子％。在一个实施方案中，M是厚度为0.5至50埃的Cu，S是厚度为1至50埃的ZnO。 S层可以掺杂有一个或多个元素。自旋阀的dR / R比提高到10％以上，同时保持可接受的EM和RA性能。

9. 发明授权

US08300356B2 CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording 有权
标题翻译： CoFe / Ni多层薄膜与微波辅助磁记录的垂直成像
公开(公告)号：US08300356B2
公开(公告)日：2012-10-30
申请号：US12800196
申请日：2010-05-11
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： G11B5/235 , G11B5/31 , G11B5/39
CPC分类号： G11B5/235 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11B5/1278 , G11B5/3153 , G11B5/33 , G11B5/3909 , G11B5/3967 , G11B2005/0024 , G11B2005/3996 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01F1/0579 , H01F10/325 , H01F10/3254 , H01F10/3259 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01F41/305 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/115
摘要： A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.
摘要翻译：公开了具有种子/ SIL /间隔物/ FGL /覆盖构型的自旋转移振荡器，其具有由Ta制成的复合种子层和具有fcc（111）或hcp（001）结构的金属层，以增强垂直磁各向异性（PMA）在叠层（A1 / A2）X层叠自旋注入层（SIL）中。场发生层（FGL）由高Bs材料如FeCo制成。或者，STO具有种子/ FGL /间隔物/ SIL /覆盖配置。 SIL可以包括与（A1 / A2）X层压体交换耦合的FeCo层（x为5至50）以改善坚固性。 FGL可以包括与高Bs层交换耦合的（A1 / A2）Y层叠体（y = 5〜30），以实现更容易的振荡。 A1可以是Co，CoFe或CoFeR中的一种，其中R是金属，A2是Ni，NiCo或NiFe之一。 STO可以形成在写入头中的主极和后屏蔽之间。

10. 发明申请

US20130082787A1 Spin injection layer robustness for microwave assisted magnetic recording 有权
标题翻译：微波辅助磁记录的自旋注入层鲁棒性
公开(公告)号：US20130082787A1
公开(公告)日：2013-04-04
申请号：US13200844
申请日：2011-10-03
申请人： Kunliang Zhang , Min Li , Yuchen Zhou , Soichi Oikawa , Hitoshi Iwasaki , Kenichiro Yamada , Katsuhiko Koui
发明人： Kunliang Zhang , Min Li , Yuchen Zhou , Soichi Oikawa , Hitoshi Iwasaki , Kenichiro Yamada , Katsuhiko Koui
IPC分类号： H03B7/00 , C23C14/14 , C23C14/35 , B05D5/00 , B05D3/02
CPC分类号： H03B15/006 , C23C14/025 , C23C14/165 , G11C5/005 , G11C11/161 , Y10T428/1114
摘要： A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe(100-V)CoV where v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)X where x is between 5 and 50.
摘要翻译：具有在自旋注入层（SIL）和场产生层（FGL）之间形成的非磁性间隔物的自旋转移（扭矩）振荡器（STO），以及由Fe（100-V）CoV组成的界面层，其中v 公开了在SIL和非磁性间隔物之间形成的5至100原子％。使用由Ta制成的复合晶种层和具有fcc（111）或hcp（001）结构的金属层来增强STO器件中的垂直磁各向异性（PMA）。界面层淬灭SIL振荡，从而使SIL稳定于FGL振荡。界面层优选具有5至50埃的厚度，并且增强STO器件中的振幅（dR / R）。 STO设备可能具有顶部SIL或底部SIL配置。 SIL通常是诸如（Co / Ni）X的层压结构，其中x在5和50之间。

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