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1. 发明申请

US20120087042A1 Perpendicular magnetic recording head laminated with AFM-FM phase change material 有权
标题翻译：垂直磁记录头与AFM-FM相变材料层压
公开(公告)号：US20120087042A1
公开(公告)日：2012-04-12
申请号：US13199188
申请日：2011-08-22
申请人： Yuchen Zhou , Kenichi Takano , Kowang Liu , Kunliang Zhang , Liejie Guan , Moris Dovek , Joe Smyth
发明人： Yuchen Zhou , Kenichi Takano , Kowang Liu , Kunliang Zhang , Liejie Guan , Moris Dovek , Joe Smyth
IPC分类号： G11B5/147 , G11B5/60
CPC分类号： G11B5/3113 , G11B5/1278 , G11B5/147 , G11B5/3146 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： A PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing through an AFM-FM phase change material that is in an antiferromagnetic (AFM) state during non-writing and switches to a ferromagnetic (FM) state by heating during writing. The main pole layer including the write pole may be comprised of a laminated structure having a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers arranged in an alternating manner. The AFM-FM phase change material is preferably a FeRh, FeRhPt, FeRhPd, or FeRhIr and may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip. Heating for the AFM to FM transition is provided by write coils and/or a coil located near the AFM-FM phase change material to enable faster transition times.
摘要翻译：公开了一种PMR写入器，其在非写入期间最小化磁极擦除，并且在写入期间通过在非写入期间处于反铁磁（AFM）状态的AFM-FM相变材料中写入期间最大化写入场并且通过以下方式切换到铁磁（FM）状态：书写过程中加热。包括写极的主极层可以由具有多个“n”个铁磁层和“n-1”个AFM-FM相变材料层的交替排列的层压结构构成。 AFM-FM相变材料优选为FeRh，FeRhPt，FeRhPd或FeRhIr，并且还可以用作磁通门以防止磁轭焊剂泄漏到写极尖端。 AFM到FM转换的加热由位于AFM-FM相变材料附近的写入线圈和/或线圈提供，以实现更快的转换时间。

2. 发明授权

US08881376B2 Method of manufacturing a perpendicular magnetic recording head laminated with AFM-FM phase change material 有权
标题翻译：制造用AFM-FM相变材料层叠的垂直磁记录头的方法
公开(公告)号：US08881376B2
公开(公告)日：2014-11-11
申请号：US13199179
申请日：2011-08-22
申请人： Yuchen Zhou , Kenichi Takano , Kowang Liu , Kunliang Zhang , Liejie Guan , Moris Dovek , Joe Smyth
发明人： Yuchen Zhou , Kenichi Takano , Kowang Liu , Kunliang Zhang , Liejie Guan , Moris Dovek , Joe Smyth
IPC分类号： G11B5/127 , G11B5/21 , G11B5/31 , G11B5/147
CPC分类号： G11B5/3113 , G11B5/1278 , G11B5/147 , G11B5/3146 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： A method of manufacturing a PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing by including an AFM-FM phase change material spacer that is in an AFM state during non-writing and switches to a FM state by heating during writing. The main pole layer including the write pole may be formed as a laminated structure by a sputter deposition process wherein a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers are laid down in an alternating manner. The AFM-FM phase change material is preferably a FeRh or FeRhX alloy (X=Pt, Pd, or Ir) having a Rh content >35 atomic %, and may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip.
摘要翻译：公开了一种制造PMR写入器的方法，其在非写入期间使磁极擦除最小化，并且在写入期间使写入场最大化，包括在非写入期间处于AFM状态的AFM-FM相变材料间隔物，并且通过书写过程中加热。包括写极的主极层可以通过溅射沉积工艺形成为层叠结构，其中以交替的方式放置多个“n”个铁磁层和“n-1”个AFM-FM相变材料层。 AFM-FM相变材料优选为Rh含量> 35原子％的FeRh或FeRhX合金（X = Pt，Pd或Ir），并且还可以用作磁通门以防止磁轭焊剂泄漏到写极点。

3. 发明申请

US20090052092A1 Perpendicular magnetic recording head laminated with AFM-FM phase change material 有权
标题翻译：垂直磁记录头与AFM-FM相变材料层压
公开(公告)号：US20090052092A1
公开(公告)日：2009-02-26
申请号：US11894494
申请日：2007-08-21
申请人： Yuchen Zhou , Kenichi Takano , Kowang Liu , Kunliang Zhang , Liejie Guan , Moris Dovek , Joe Smyth
发明人： Yuchen Zhou , Kenichi Takano , Kowang Liu , Kunliang Zhang , Liejie Guan , Moris Dovek , Joe Smyth
IPC分类号： G11B5/33
CPC分类号： G11B5/3113 , G11B5/1278 , G11B5/147 , G11B5/3146 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： A PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing through an AFM-FM phase change material that is in an AFM state during non-writing and switches to a FM state by heating during writing. The main pole layer including the write pole may be comprised of a laminated structure having a plurality of “n” ferromagnetic layers and “n-1” AFM-FM phase change material layers arranged in an alternating manner. The AFM-FM phase change material is preferably a FeRh or FeRhX alloy (X=Pt, Pd, or Ir) having a Rh content >35 atomic %. AFM-FM phase change material may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip. Heating for the AFM to FM transition is provided by write coils and/or a coil located near the AFM-FM phase change material to enable faster transition times.
摘要翻译：公开了一种PMR写入器，其在非写入期间最小化磁极擦除，并且通过在非写入期间处于AFM状态的AFM-FM相变材料的写入期间写入字段最大化并且在写入期间通过加热切换到FM状态。包括写极的主极层可以由具有多个“n”个铁磁层和“n-1”个AFM-FM相变材料层的交替排列的层压结构构成。 AFM-FM相变材料优选为Rh含量> 35原子％的FeRh或FeRhX合金（X = Pt，Pd或Ir）。 AFM-FM相变材料也可以用作磁通门，以防止磁轭磁通泄漏到写极尖端。 AFM到FM转换的加热由位于AFM-FM相变材料附近的写入线圈和/或线圈提供，以实现更快的转换时间。

4. 发明授权

US08446692B2 Perpendicular magnetic recording head laminated with AFM-FM phase change material 有权
标题翻译：垂直磁记录头与AFM-FM相变材料层压
公开(公告)号：US08446692B2
公开(公告)日：2013-05-21
申请号：US13199188
申请日：2011-08-22
申请人： Yuchen Zhou , Kenichi Takano , Kowang Liu , Kunliang Zhang , Liejie Guan , Moris Dovek , Joe Smyth
发明人： Yuchen Zhou , Kenichi Takano , Kowang Liu , Kunliang Zhang , Liejie Guan , Moris Dovek , Joe Smyth
IPC分类号： G11B5/127 , G11B5/147
CPC分类号： G11B5/3113 , G11B5/1278 , G11B5/147 , G11B5/3146 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： A PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing through an AFM-FM phase change material that is in an anti-ferromagnetic (AFM) state during non-writing and switches to a ferromagnetic (FM) state by heating during writing. The main pole layer including the write pole may be comprised of a laminated structure having a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers arranged in an alternating manner. The AFM-FM phase change material is preferably a FeRh, FeRhPt, FeRhPd, or FeRhIr and may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip. Heating for the AFM to FM transition is provided by write coils and/or a coil located near the AFM-FM phase change material to enable faster transition times.
摘要翻译：公开了一种PMR写入器，其在非写入期间最小化磁极擦除并且在写入期间通过在非写入期间处于反铁磁（AFM）状态的AFM-FM相变材料中的写入磁场最大化并切换到铁磁（FM）在写作期间加热状态。包括写极的主极层可以由具有多个“n”个铁磁层和“n-1”个AFM-FM相变材料层的交替排列的层压结构构成。 AFM-FM相变材料优选为FeRh，FeRhPt，FeRhPd或FeRhIr，并且还可以用作磁通门以防止磁轭焊剂泄漏到写极尖端。 AFM到FM转换的加热由位于AFM-FM相变材料附近的写入线圈和/或线圈提供，以实现更快的转换时间。

5. 发明申请

US20110308074A1 Perpendicular magnetic recording head laminated with AFM-FM phase change material 有权
标题翻译：垂直磁记录头与AFM-FM相变材料层压
公开(公告)号：US20110308074A1
公开(公告)日：2011-12-22
申请号：US13199179
申请日：2011-08-22
申请人： Yuchen Zhou , Kenichi Takano , Kowang Liu , Kunliang Zhang , Liejie Guan , Moris Dovek , Joe Smyth
发明人： Yuchen Zhou , Kenichi Takano , Kowang Liu , Kunliang Zhang , Liejie Guan , Moris Dovek , Joe Smyth
IPC分类号： G11B5/127
CPC分类号： G11B5/3113 , G11B5/1278 , G11B5/147 , G11B5/3146 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： A PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing through an AFM-FM phase change material that is in an AFM state during non-writing and switches to a FM state by heating during writing. The main pole layer including the write pole may be comprised of a laminated structure having a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers arranged in an alternating manner. The AFM-FM phase change material is preferably a FeRh or FeRhX alloy (X=Pt, Pd, or Ir) having a Rh content>35 atomic %. AFM-FM phase change material may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip. Heating for the AFM to FM transition is provided by write coils and/or a coil located near the AFM-FM phase change material to enable faster transition times.
摘要翻译：公开了一种PMR写入器，其在非写入期间最小化磁极擦除，并且通过在非写入期间处于AFM状态的AFM-FM相变材料的写入期间写入字段最大化并且在写入期间通过加热切换到FM状态。包括写极的主极层可以由具有多个“n”个铁磁层和“n-1”个AFM-FM相变材料层的交替排列的层压结构构成。 AFM-FM相变材料优选为Rh含量> 35原子％的FeRh或FeRhX合金（X = Pt，Pd或Ir）。 AFM-FM相变材料也可以用作磁通门，以防止磁轭磁通泄漏到写极尖端。 AFM到FM转换的加热由位于AFM-FM相变材料附近的写入线圈和/或线圈提供，以实现更快的转换时间。

6. 发明授权

US08004794B2 Perpendicular magnetic recording head laminated with AFM-FM phase change material 有权
标题翻译：垂直磁记录头与AFM-FM相变材料层压
公开(公告)号：US08004794B2
公开(公告)日：2011-08-23
申请号：US11894494
申请日：2007-08-21
申请人： Yuchen Zhou , Kenichi Takano , Kowang Liu , Kunliang Zhang , Liejie Guan , Moris Dovek , Joe Smyth
发明人： Yuchen Zhou , Kenichi Takano , Kowang Liu , Kunliang Zhang , Liejie Guan , Moris Dovek , Joe Smyth
IPC分类号： G11B5/127 , G11B5/147
CPC分类号： G11B5/3113 , G11B5/1278 , G11B5/147 , G11B5/3146 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： A PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing through an AFM-FM phase change material that is in an AFM state during non-writing and switches to a FM state by heating during writing. The main pole layer including the write pole may be comprised of a laminated structure having a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers arranged in an alternating manner. The AFM-FM phase change material is preferably a FeRh or FeRhX alloy (X=Pt, Pd, or Ir) having a Rh content >35 atomic %. AFM-FM phase change material may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip. Heating for the AFM to FM transition is provided by write coils and/or a coil located near the AFM-FM phase change material to enable faster transition times.
摘要翻译：公开了一种PMR写入器，其在非写入期间最小化磁极擦除，并且通过在非写入期间处于AFM状态的AFM-FM相变材料的写入期间写入字段最大化并且在写入期间通过加热切换到FM状态。包括写极的主极层可以由具有多个“n”个铁磁层和“n-1”个AFM-FM相变材料层的交替排列的层压结构构成。 AFM-FM相变材料优选为Rh含量> 35原子％的FeRh或FeRhX合金（X = Pt，Pd或Ir）。 AFM-FM相变材料也可以用作磁通门，以防止磁轭磁通泄漏到写极尖端。 AFM到FM转换的加热由位于AFM-FM相变材料附近的写入线圈和/或线圈提供，以实现更快的转换时间。

7. 发明申请

US20100128377A1 Electric field assisted magnetic recording 有权
标题翻译：电场辅助磁记录
公开(公告)号：US20100128377A1
公开(公告)日：2010-05-27
申请号：US12313796
申请日：2008-11-25
申请人： Yuchen Zhou , Kowang Liu , Kunliang Zhang , Erhard Schreck
发明人： Yuchen Zhou , Kowang Liu , Kunliang Zhang , Erhard Schreck
IPC分类号： G11B5/02 , G11B5/82
CPC分类号： G11B5/1278 , G11B2005/001
摘要： We describe a system for electric field assisted magnetic recording where a recordable magnetic medium includes a magnetic recording layer of high coercivity and vertical magnetic anisotropy that is adjacent to an electrostrictive layer which can be placed in a state of stress by a electric field or which is already pre-stressed and which pre-stress can be turned into strain by an electric field. When the magnetic medium is acted on simultaneously by a magnetic writing field and an electric field, the stress in the elctrostrictive layer is transferred to a magnetostrictive layer which is the magnetic recording layer by itself or is coupled to the magnetic recording layer, whereupon the magnetic recording layer is made more isotropic and more easily written upon. Residual stresses in the electrostrictive layer can then be removed by an additional electric field of opposite sign to the stress-producing field.
摘要翻译：我们描述了一种用于电场辅助磁记录的系统，其中可记录磁介质包括与矫顽力层相邻的具有高矫顽力和垂直磁各向异性的磁记录层，该电致伸缩层可通过电场置于应力状态，已经预应力，哪些预应力可以通过电场变成应变。当磁介质通过磁场和电场同时作用时，电致伸缩层中的应力自身转移到作为磁记录层的磁致伸缩层，或耦合到磁记录层，由此磁性记录层变得更加各向同性，更容易写入。电致伸缩层中的残余应力然后可以通过与应力产生场相反的附加电场来去除。

8. 发明授权

US08023218B2 Electric field assisted magnetic recording 有权
标题翻译：电场辅助磁记录
公开(公告)号：US08023218B2
公开(公告)日：2011-09-20
申请号：US12313796
申请日：2008-11-25
申请人： Yuchen Zhou , Kowang Liu , Kunliang Zhang , Erhard Schreck
发明人： Yuchen Zhou , Kowang Liu , Kunliang Zhang , Erhard Schreck
IPC分类号： G11B5/02
CPC分类号： G11B5/1278 , G11B2005/001
摘要： We describe a system for electric field assisted magnetic recording where a recordable magnetic medium includes a magnetic recording layer of high coercivity and vertical magnetic anisotropy that is adjacent to an electrostrictive layer which can be placed in a state of stress by a electric field or which is already pre-stressed and which pre-stress can be turned into strain by an electric field. When the magnetic medium is acted on simultaneously by a magnetic writing field and an electric field, the stress in the electrostrictive layer is transferred to a magnetostrictive layer which is the magnetic recording layer by itself or is coupled to the magnetic recording layer, whereupon the magnetic recording layer is made more isotropic and more easily written upon. Residual stresses in the electrostrictive layer can then be removed by an additional electric field of opposite sign to the stress-producing field.
摘要翻译：我们描述了一种用于电场辅助磁记录的系统，其中可记录磁介质包括与矫顽力层相邻的具有高矫顽力和垂直磁各向异性的磁记录层，该电致伸缩层可通过电场置于应力状态，已经预应力，哪些预应力可以通过电场变成应变。当磁介质由磁场和电场同时作用时，电致伸缩层中的应力自身转移到作为磁记录层的磁致伸缩层，或耦合到磁记录层，由此磁性记录层变得更加各向同性，更容易写入。电致伸缩层中的残余应力然后可以通过与应力产生场相反的附加电场来去除。

9. 发明授权

US08085498B2 PMR write with flux choking area 有权
公开(公告)号：US08085498B2
公开(公告)日：2011-12-27
申请号：US12586249
申请日：2009-09-17
申请人： Zhigang Bai , Yue Liu , Kowang Liu , Yan Wu , Moris Dovek
发明人： Zhigang Bai , Yue Liu , Kowang Liu , Yan Wu , Moris Dovek
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163
摘要： A PMR writer having a trailing shield structure is disclosed in which a flux choking layer (FCL) formed adjacent to the ABS provides a means to limit the amount of flux flowing from the trailing shield to a first write shield (WS1) near the write pole tip thereby significantly reducing adjacent track erasure. The FCL has a substantially smaller thickness than a top section of the trailing shield to which it is attached along a side opposite the ABS. As a result, pole tip protrusion is reduced compared to prior art PMR writers. The FCL contacts a trailing side of WS1 at the ABS and one or both of the trailing sides of the WS1 and FCL may be tapered or perpendicular with respect to the ABS. The top trailing shield section, FCL, and WS1 may be comprised of NiFe, CoFe, CoFeNi, or alloys thereof.

10. 发明申请

US20110063755A1 PMR write with flux choking area 有权
标题翻译： PMR写入焊剂阻塞区域
公开(公告)号：US20110063755A1
公开(公告)日：2011-03-17
申请号：US12586249
申请日：2009-09-17
申请人： Zhigang Bai , Yue Liu , Kowang Liu , Yan Wu , Moris Dovek
发明人： Zhigang Bai , Yue Liu , Kowang Liu , Yan Wu , Moris Dovek
IPC分类号： G11B5/10 , G11B5/127
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163
摘要： A PMR writer having a trailing shield structure is disclosed in which a flux choking layer (FCL) formed adjacent to the ABS provides a means to limit the amount of flux flowing from the trailing shield to a first write shield (WS1) near the write pole tip thereby significantly reducing adjacent track erasure. The FCL has a substantially smaller thickness than a top section of the trailing shield to which it is attached along a side opposite the ABS. As a result, pole tip protrusion is reduced compared to prior art PMR writers. The FCL contacts a trailing side of WS1 at the ABS and one or both of the trailing sides of the WS1 and FCL may be tapered or perpendicular with respect to the ABS. The top trailing shield section, FCL, and WS1 may be comprised of NiFe, CoFe, CoFeNi, or alloys thereof.
摘要翻译：公开了具有拖尾屏蔽结构的PMR写入器，其中与ABS相邻形成的通量阻塞层（FCL）提供了一种将从后屏蔽流过的磁通量限制在写极附近的第一写屏蔽（WS1）的装置从而显着地减少相邻轨道擦除。 FCL具有比尾部护罩的顶部部分基本上小的厚度，其沿着与ABS相对的一侧被附接到该顶部部分。结果，与现有技术的PMR写入器相比，极尖突起减小。 FCL在ABS处接触WS1的后侧，并且WS1和FCL的一个或两个后侧可以相对于ABS呈锥形或垂直。顶部后屏蔽部分FCL和WS1可以由NiFe，CoFe，CoFeNi或其合金组成。

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