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1. 发明授权

US07173841B2 Magnetic memory array 有权
标题翻译：磁存储阵列
公开(公告)号：US07173841B2
公开(公告)日：2007-02-06
申请号：US10904897
申请日：2004-12-03
申请人： Yuan-Ching Peng , Shyue-Shyn Lin , Wei-Ming Chen
发明人： Yuan-Ching Peng , Shyue-Shyn Lin , Wei-Ming Chen
IPC分类号： G11C5/08
CPC分类号： G11C11/15 , G11C5/063
摘要： A magnetic random access memory (MRAM) device disclosed herein includes an array of magnetic memory cells having magnetoresistive (MR) stacks. The MRAM array also includes a series of bit lines and word lines coupled to the MR stacks. The array layout provides for reduced crosstalk between neighboring memory cells by increasing a distance between neighboring MR stacks along a common conductor without increasing the overall layout area of the MRAM array. Several embodiments are disclosed where neighboring MR stacks are offset such that the MR stacks are staggered. For example, groups of MR stacks coupled to a common word line or to a common bit line can be staggered. The staggered layout provides for increased distance between neighboring MR stacks for a given MRAM array area, thereby resulting in a reduction of crosstalk, for example during write operations.
摘要翻译：本文公开的磁性随机存取存储器（MRAM）装置包括具有磁阻（MR）堆叠的磁存储器单元阵列。 MRAM阵列还包括耦合到MR堆叠的一系列位线和字线。阵列布局通过增加沿着公共导体的相邻MR堆叠之间的距离而不增加MRAM阵列的总体布局面积来提供相邻存储器单元之间减少的串扰。公开了几个实施例，其中相邻MR堆叠被偏移，使得MR堆叠交错。例如，耦合到公共字线或公共位线的MR堆叠组可以交错。交错布局提供了对于给定MRAM阵列区域的相邻MR堆叠之间的距离增加，从而导致例如在写入操作期间串扰的减少。

2. 发明申请

US20060120147A1 Magnetic Memory Array 有权
标题翻译：磁存储阵列
公开(公告)号：US20060120147A1
公开(公告)日：2006-06-08
申请号：US10904897
申请日：2004-12-03
申请人： Yuan-Ching Peng , Shyue-Shyn Lin , Wei-Ming Chen
发明人： Yuan-Ching Peng , Shyue-Shyn Lin , Wei-Ming Chen
IPC分类号： G11C11/14 , G11C11/00 , G11C11/15 , G11C5/02
CPC分类号： G11C11/15 , G11C5/063
摘要： A magnetic random access memory (MRAM) device disclosed herein includes an array of magnetic memory cells having magnetoresistive (MR) stacks. The MRAM array also includes a series of bit lines and word lines coupled to the MR stacks. The array layout provides for reduced crosstalk between neighboring memory cells by increasing a distance between neighboring MR stacks along a common conductor without increasing the overall layout area of the MRAM array. Several embodiments are disclosed where neighboring MR stacks are offset such that the MR stacks are staggered. For example, groups of MR stacks coupled to a common word line or to a common bit line can be staggered. The staggered layout provides for increased distance between neighboring MR stacks for a given MRAM array area, thereby resulting in a reduction of crosstalk, for example during write operations.
摘要翻译：本文公开的磁性随机存取存储器（MRAM）装置包括具有磁阻（MR）堆叠的磁存储器单元阵列。 MRAM阵列还包括耦合到MR堆叠的一系列位线和字线。阵列布局通过增加沿着公共导体的相邻MR堆叠之间的距离而不增加MRAM阵列的总体布局面积来提供相邻存储器单元之间减少的串扰。公开了几个实施例，其中相邻MR堆叠被偏移，使得MR堆叠交错。例如，耦合到公共字线或公共位线的MR堆叠组可以交错。交错布局提供了对于给定MRAM阵列区域的相邻MR堆叠之间的距离增加，从而导致例如在写入操作期间串扰的减少。

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