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1. 发明授权

US06020236A Method to form capacitance node contacts with improved isolation in a DRAM process 有权
标题翻译：在DRAM工艺中形成具有改进的隔离的电容节点触点的方法
公开(公告)号：US06020236A
公开(公告)日：2000-02-01
申请号：US257723
申请日：1999-02-25
申请人： Yu-Hua Lee , James Wu , Wen-Chuan Chiang , Min-Hsiung Chiang
发明人： Yu-Hua Lee , James Wu , Wen-Chuan Chiang , Min-Hsiung Chiang
IPC分类号： H01L21/8242
CPC分类号： H01L27/10852
摘要： A method to form capacitance node contacts with improved isolation in a DRAM process is described. An isolation layer is formed on a semiconductor substrate. A first contact hole is formed and filled with a polysilicon plug and the top surface of the isolation layer and of the polysilicon plug are polished to a planar surface. A first interpoly isolation layer is deposited. A stopping layer is deposited. A capping layer is deposited. A first polysilicon layer is deposited. The first polysilicon layer is etched to form features. A second interpoly isolation layer is deposited. The second interpoly isolation layer is planarized. The second contact hole is etched through the second interpoly isolation layer and the capping layer. The exposed first polysilicon material is etched back to the vertical sides of the second contact hole. The stopping layer and the first interpoly isolation layer are etched through to the top surface of the polysilicon plug. A lining layer of silicon nitride is deposited and etched to remain only on the vertical interior surfaces of the second contact hole. A second polysilicon layer is deposited to fill the second contact hole. The second polysilicon layer and the second interpoly isolation layer are planarized. The fabrication of the integrated circuit device is completed.
摘要翻译：描述了在DRAM处理中形成具有改进的隔离的电容节点触点的方法。在半导体衬底上形成隔离层。形成第一接触孔并填充多晶硅插塞，并且隔离层和多晶硅插塞的顶表面被抛光到平坦表面。沉积第一间隔隔离层。沉积停止层。沉积覆盖层。沉积第一多晶硅层。第一多晶硅层被蚀刻以形成特征。沉积第二个互隔离层。第二间隔隔离层被平坦化。第二接触孔被蚀刻穿过第二多晶硅隔离层和封盖层。暴露的第一多晶硅材料被回蚀刻到第二接触孔的垂直侧。停止层和第一互隔离层被蚀刻到多晶硅插塞的顶表面。沉积和蚀刻氮化硅的内衬层以仅保留在第二接触孔的垂直内表面上。沉积第二多晶硅层以填充第二接触孔。第二多晶硅层和第二多晶硅隔离层被平坦化。完成集成电路器件的制造。

2. 发明授权

US6100116A Method to form a protected metal fuse 失效
标题翻译：形成保护金属保险丝的方法
公开(公告)号：US6100116A
公开(公告)日：2000-08-08
申请号：US99144
申请日：1998-06-18
申请人： Yu-Hua Lee , James Wu , Jenn Ming Huang , Cheng-Yeh Shih , Min-Hsiung Chiang
发明人： Yu-Hua Lee , James Wu , Jenn Ming Huang , Cheng-Yeh Shih , Min-Hsiung Chiang
IPC分类号： H01L23/525 , H01L21/82
CPC分类号： H01L23/5258 , H01L2924/0002
摘要： A method for forming protection layers completely around a metal fuse to protect the metal fuse 74A and metal lines 74B from moisture corrosion from fuse opening and micro-cracks in dielectric layers. The invention surrounds the fuse on all sides with two protection layers: a bottom protection layer 70 and a top protection layer 78. The top protection layer 78 is formed over the fuse metal, the sidewalls of the metal fuse and the bottom protection layer 70. The protection layers 70 78 of the invention form a moisture proof seal structure around the metal fuse 74A and protect the metal fuse 74A and metal lines 74B from moisture and contaminates.
摘要翻译：一种用于在金属保险丝周围完全形成保护层的方法，用于保护金属保险丝74A和金属线74B免受保险丝开口的湿度腐蚀和电介质层中的微裂纹。本发明在所有侧面上具有两个保护层的保险丝：底部保护层70和顶部保护层78.顶部保护层78形成在熔丝金属，金属熔断器的侧壁和底部保护层70上。本发明的保护层70 78在金属熔断器74A周围形成防潮密封结构，并且保护金属熔断器74A和金属线74B免受潮湿和污染。

3. 发明授权

US5854119A Robust method of forming a cylinder capacitor for DRAM circuits 失效
标题翻译：形成用于DRAM电路的圆柱电容器的坚固的方法
公开(公告)号：US5854119A
公开(公告)日：1998-12-29
申请号：US058794
申请日：1998-04-13
申请人： James Wu , Yu-Hua Lee , Jenn Ming Huang
发明人： James Wu , Yu-Hua Lee , Jenn Ming Huang
IPC分类号： H01L21/02 , H01L21/311 , H01L21/8242 , H01L21/20
CPC分类号： H01L27/10852 , H01L21/31116 , H01L28/40
摘要： A method of forming a capacitor for DRAM or other circuits is described which avoids the problem of weak spots or gaps forming between a polysilicon contact plug and the first capacitor plate. A layer of first dielectric is formed on a substrate, A layer of second dielectric is formed on the layer of first dielectric. A layer of third dielectric is formed on the layer of second dielectric. A first hole is formed in the first, second, and third dielectrics exposing a contact region of the substrate. The first hole is then filled with a protective material and a second hole is formed in the layer of third dielectric using the layer of second dielectric as an etch stop. The first hole lies within the periphery of the second hole. The protective material prevents re-deposition of the third dielectric. The remaining protective material is then removed and a layer of conducting material is formed on the top surface of the layer of third dielectric, the sidewalls of the second hole, the sidewalls of the first hole, and the contact region of the substrate thereby forming a first capacitor plate.
摘要翻译：描述了形成用于DRAM或其他电路的电容器的方法，其避免了在多晶硅接触插塞和第一电容器板之间形成的弱点或间隙的问题。在基板上形成第一电介质层。在第一电介质层上形成第二电介质层。在第二电介质层上形成第三电介质层。在暴露基板的接触区域的第一，第二和第三电介质中形成第一孔。然后用保护材料填充第一孔，并且使用第二电介质层作为蚀刻停止件在第三电介质层中形成第二孔。第一个孔位于第二个孔的周围。保护材料防止第三电介质的再沉积。然后去除剩余的保护材料，并且在第三电介质层的顶表面，第二孔的侧壁，第一孔的侧壁和衬底的接触区域上形成导电材料层，从而形成第一电容器板。

4. 发明授权

US06228736B1 Modified method for forming cylinder-shaped capacitors for dynamic random access memory (DRAM) 有权
标题翻译：用于形成用于动态随机存取存储器（DRAM）的圆柱形电容器的改进方法
公开(公告)号：US06228736B1
公开(公告)日：2001-05-08
申请号：US09131117
申请日：1998-08-07
申请人： Yu-Hua Lee , James Wu
发明人： Yu-Hua Lee , James Wu
IPC分类号： H01L2120
CPC分类号： H01L27/10855 , H01L28/91
摘要： A modified method for forming cylinder-shaped stacked capacitors for DRAMs which circumvents oxide erosion due to misalignment is described. A planar silicon oxide (SiO2) first insulating layer is formed over device areas. A silicon nitride (Si3N4) etch-stop layer is deposited and first openings are etched for capacitor node contacts. A polysilicon layer is deposited and etched back to form node contacts in the first openings. A Si3N4 second etch-stop layer is deposited and etched back to form protective sidewall spacers in the first openings when the polysilicon node contact is inadvertently overetched. A second SiO2 insulating layer is deposited and second openings for bottom electrodes are etched over the node contacts. A conformal second polysilicon layer is deposited and chemically/mechanically polished back to form the bottom electrodes in the second openings. The second insulating layer is removed by wet etching to the first etch-stop layer. When the second openings are misaligned over the node contact openings, the Si3N4 sidewall spacers protect the SiO2 first insulating layer from being eroded over the devices on the substrate. The capacitors are now completed by forming an interelectrode dielectric layer on the bottom electrodes, and depositing and patterning a third polysilicon layer for top electrodes.
摘要翻译：描述了一种用于形成用于DRAM的圆柱形叠层电容器的修改方法，其规避了由于未对准引起的氧化物侵蚀。在器件区域上形成平面氧化硅（SiO 2）第一绝缘层。沉积氮化硅（Si 3 N 4）蚀刻停止层，并且蚀刻用于电容器节点触点的第一开口。沉积多晶硅层并回蚀刻以在第一开口中形成节点接触。当多晶硅节点接触不经意地过蚀刻时，沉积并蚀刻Si 3 N 4第二蚀刻停止层以在第一开口中形成保护性侧壁间隔物。沉积第二SiO 2绝缘层，并且在节点触点上蚀刻用于底部电极的第二开口。沉积保形第二多晶硅层并在第二开口中化学/机械抛光以形成底部电极。通过湿蚀刻将第二绝缘层去除到第一蚀刻停止层。当第二开口在节点接触开口上不对准时，Si 3 N 4侧壁间隔物保护SiO 2第一绝缘层免受衬底上的器件的侵蚀。现在通过在底部电极上形成电极间电介质层来完成电容器，并且沉积并构图用于顶部电极的第三多晶硅层。

5. 发明授权

US6017824A Passivation etching procedure, using a polysilicon stop layer, for repairing embedded DRAM cells 有权
标题翻译：钝化蚀刻程序，使用多晶硅停止层，修复嵌入式DRAM单元
公开(公告)号：US6017824A
公开(公告)日：2000-01-25
申请号：US192454
申请日：1998-11-16
申请人： Yu-Hua Lee , James Wu
发明人： Yu-Hua Lee , James Wu
IPC分类号： H01L21/311 , H01L21/768 , H01L21/8242 , H01L23/525 , H01L21/465
CPC分类号： H01L21/76816 , H01L21/31116 , H01L21/76894 , H01L23/5258 , H01L27/10894 , H01L2924/0002
摘要： A process of opening, a stack of large diameter via holes, in a multiple levels of insulator layers, to be used for access of a laser repair procedure, applied to underlying integrated circuit shapes, while simultaneously opening small diameter via holes, in the same multiple levels of insulator layers, to be used to accommodate metal plug structures, has been developed. The process features the use of a polysilicon stop layer, used at the bottom of the stack of large diameter via holes, protecting underlying components of the underlying integrated circuit, from the dry and wet etching procedures used for the creation of the stack of large diameter via holes. The process also features the formation of metal spacers, on the sides of the large diameter via holes, created simultaneously during the formation of metal plug structures, and used again to protect the multiple levels of insulator layer, that would have been exposed, if left unprotected, during a wet etching procedure.
摘要翻译：打开在多个绝缘体层中的大直径通孔的堆叠的过程，用于访问激光修复程序，应用于下面的集成电路形状，同时在同一个孔中打开小直径的通孔已经开发了用于容纳金属插塞结构的多层绝缘体层。该工艺特征在于使用多晶硅停止层，在大直径通孔的堆叠底部使用，保护下面的集成电路的下面的部件不受用于创建大直径堆叠的干法和湿蚀刻步骤通孔。该方法还特征在于在形成金属塞结构期间同时形成的大直径通孔的侧面上形成金属间隔物，并且再次用于保护将被暴露的多层绝缘体层（如果剩下的话）在湿蚀刻过程中不受保护。

6. 发明授权

US06555435B2 Method to eliminate shorts between adjacent contacts due to interlevel dielectric voids 有权
公开(公告)号：US06555435B2
公开(公告)日：2003-04-29
申请号：US10087070
申请日：2002-03-01
申请人： Ming-Hsiung Chiang , James Wu , Yu-Hua Lee
发明人： Ming-Hsiung Chiang , James Wu , Yu-Hua Lee
IPC分类号： H01L2336
CPC分类号： H01L21/76831 , H01L21/76897
摘要： A method to form contacts in an integrated circuit device comprising to eliminate shorting between adjacent contacts due to dielectric layer voids is achieved. A substrate is provided. Narrowly spaced conductive lines are provided on the substrate. A dielectric layer is deposited overlying the conductive lines and the substrate. The dielectric layer is etched through to the top surface of the substrate in areas defined by lithographic mask to form contact openings between adjacent narrowly spaced conductive lines. An insulating layer is deposited overlying the dielectric layer and filling the contact openings wherein the insulating layer forms a lining layer inside the contact openings and fills any voids in the dielectric layer extending out of the contact openings. The insulating layer is etched through to expose the top surface of the substrate. A conductive layer is deposited overlying the dielectric layer and filling the contact openings. The conductive layer is etched as defined by lithographic mask. A passivation layer is deposited overlying the conductive layer and the dielectric layer. The integrated circuit device is completed.

7. 发明授权

US06365464B1 Method to eliminate shorts between adjacent contacts due to interlevel dielectric voids 有权
标题翻译：消除由于层间电介质空隙引起的相邻触点之间的短路的方法
公开(公告)号：US06365464B1
公开(公告)日：2002-04-02
申请号：US09318470
申请日：1999-05-25
申请人： Ming-Hsiung Chiang , James Wu , Yu-Hua Lee
发明人： Ming-Hsiung Chiang , James Wu , Yu-Hua Lee
IPC分类号： H10L21336
CPC分类号： H01L21/76831 , H01L21/76897
摘要： A method to form contacts in an integrated circuit device comprising to eliminate shorting between adjacent contacts due to dielectric layer voids is achieved. A substrate is provided. Narrowly spaced conductive lines are provided on the substrate. A dielectric layer is deposited overlying the conductive lines and the substrate. The dielectric layer is etched through to the top surface of the substrate in areas defined by lithographic mask to form contact openings between adjacent narrowly spaced conductive lines. An insulating layer is deposited overlying the dielectric layer and filling the contact openings wherein the insulating layer forms a lining layer inside the contact openings and fills any voids in the dielectric layer extending out of the contact openings. The insulating layer is etched through to expose the top surface of the substrate. A conductive layer is deposited overlying the dielectric layer and filling the contact openings. The conductive layer is etched as defined by lithographic mask. A passivation layer is deposited overlying the conductive layer and the dielectric layer. The integrated circuit device is completed.
摘要翻译：在集成电路器件中形成接触的方法包括消除由于电介质层空隙引起的相邻触点之间的短路。提供基板。在基板上设置窄间隔的导线。沉积覆盖导电线和衬底的电介质层。在由光刻掩模限定的区域中，将介电层蚀刻到衬底的顶表面，以在相邻的窄间隔的导线之间形成接触开口。绝缘层沉积在电介质层上方并填充接触开口，其中绝缘层在接触开口内形成衬里层，并填充延伸出接触开口的电介质层中的任何空隙。蚀刻绝缘层以暴露衬底的顶表面。沉积覆盖介电层并填充接触开口的导电层。如由光刻掩模所限定的那样蚀刻导电层。沉积覆盖在导电层和电介质层上的钝化层。集成电路装置完成。

8. 发明授权

US08511587B2 Showerhead assembly 有权
标题翻译：喷头总成
公开(公告)号：US08511587B2
公开(公告)日：2013-08-20
申请号：US13005585
申请日：2011-01-13
申请人： Michael Miller , James Wu , Alex Wu , Edgar Alexander Zarins
发明人： Michael Miller , James Wu , Alex Wu , Edgar Alexander Zarins
IPC分类号： B05B1/18 , B05B1/12 , B05B1/00
CPC分类号： B05B1/3026 , B05B1/185 , B05B1/3086 , B05B15/654
摘要： A shower head has a nozzle, a shell, a water inlet, and an assembly for holding the nozzle. The assembly has an upper plate made of a first plastic material and has a first opening having a first diameter through which the nozzle extends, a lower plate made of a second plastic material and has a second opening through which the nozzle extends, and an elastomeric middle plate has a third opening having a third diameter that is smaller than the first or second diameter through which the nozzle extends and is in contact therewith. The first material and the second material are ultrasonically welded together to trap the middle plate therebetween and the first opening, the second opening and the third opening are roughly coaxial with each other.
摘要翻译：淋浴头具有喷嘴，壳体，进水口和用于保持喷嘴的组件。组件具有由第一塑料材料制成的上板，并且具有第一开口，第一开口具有喷嘴延伸穿过的第一直径，由第二塑料材料制成的下板，并具有喷嘴延伸穿过的第二开口，弹性体中间板具有第三开口，其具有小于喷嘴延伸并与其接触的第一或第二直径的第三直径。第一材料和第二材料被超声波焊接在一起以将中间板捕获在其间，并且第一开口，第二开口和第三开口彼此大致同轴。

9. 发明申请

US20120181356A1 SHOWERHEAD ASSEMBLY 有权
标题翻译：淋浴组件
公开(公告)号：US20120181356A1
公开(公告)日：2012-07-19
申请号：US13005585
申请日：2011-01-13
申请人： Michael Miller , James Wu , Alex Wu , Edgar Alexander Zarins
发明人： Michael Miller , James Wu , Alex Wu , Edgar Alexander Zarins
IPC分类号： B05B1/14
CPC分类号： B05B1/3026 , B05B1/185 , B05B1/3086 , B05B15/654
摘要： A shower head has a nozzle, a shell, a water inlet, and an assembly for holding the nozzle. The assembly has an upper plate made of a first plastic material and has a first opening having a first diameter through which the nozzle extends, a lower plate made of a second plastic material and has a second opening through which the nozzle extends, and an elastomeric middle plate has a third opening having a third diameter that is smaller than the first or second diameter through which the nozzle extends and is in contact therewith. The first material and the second material are ultrasonically welded together to trap the middle plate therebetween and the first opening, the second opening and the third opening are roughly coaxial with each other.
摘要翻译：淋浴头具有喷嘴，壳体，进水口和用于保持喷嘴的组件。组件具有由第一塑料材料制成的上板，并且具有第一开口，第一开口具有喷嘴延伸穿过的第一直径，由第二塑料材料制成的下板，并具有喷嘴延伸穿过的第二开口，弹性体中间板具有第三开口，其具有小于喷嘴延伸并与其接触的第一或第二直径的第三直径。第一材料和第二材料被超声波焊接在一起以将中间板捕获在其间，并且第一开口，第二开口和第三开口彼此大致同轴。

10. 外观设计

USD612909S1 Shower head 有权
公开(公告)号：USD612909S1
公开(公告)日：2010-03-30
申请号：US29338616
申请日：2009-06-15
申请人： James Wu , Alex Wu
设计人： James Wu , Alex Wu

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