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    • 5. 发明授权
    • Double-sided image sensor formed on a single semiconductor wafer die
    • 双面图像传感器形成在单个半导体晶片模具上
    • US08686342B2
    • 2014-04-01
    • US13442562
    • 2012-04-09
    • Xiao Ying HongDominic Massetti
    • Xiao Ying HongDominic Massetti
    • H01L27/00H03F3/08
    • H01L27/14609H01L27/1463H01L27/14634H01L27/14636H01L27/14641
    • An example double-sided image sensor includes a semiconductor die, a photodetector, a charge-to-voltage converter, and support circuitry. The semiconductor die has a first side and a second side that is opposite the first side. The photodetector is disposed within the semiconductor die on the first side for accumulating an image charge in response to light incident on the first side. The charge-to-voltage converter is disposed within the semiconductor die on the first side. The transfer gate is also disposed on the first side of the semiconductor die between the photodetector and the charge-to-voltage converter to transfer the image charge from the photodetector to the charge-to-voltage converter. Support circuitry of the image sensor is disposed within the semiconductor die on the second side and is electrically coupled to the charge-to-voltage converter.
    • 示例性双面图像传感器包括半导体管芯,光电检测器,电荷 - 电压转换器和支持电路。 半导体管芯具有与第一侧相对的第一侧和第二侧。 光电检测器设置在第一侧的半导体管芯内,用于响应入射在第一侧的光积累图像电荷。 电荷 - 电压转换器设置在第一侧上的半导体管芯内。 传输栅极还设置在光电检测器和电荷 - 电压转换器之间的半导体管芯的第一侧上,以将来自光电检测器的图像电荷转移到电荷 - 电压转换器。 图像传感器的支持电路设置在第二侧的半导体管芯内并电耦合到电荷 - 电压转换器。
    • 8. 发明授权
    • Multifunctional contactless interconnect technology
    • 多功能非接触式互连技术
    • US5556507A
    • 1996-09-17
    • US206444
    • 1994-03-03
    • Nitin ParekhDominic Massetti
    • Nitin ParekhDominic Massetti
    • H01L21/768H01L21/00
    • H01L21/76895
    • The present invention is a method for providing multifunctional, contactless, interconnect technology that can simultaneously fabricate four features on a silicon wafer within the same metallization level including a diffusion barrier layer, a trim element (fuse), a higher resistivity local interconnect/strap, and a lower resistivity global interconnect. The fabrication only requires two lithographic operations and one metal deposition. A first metal (a refractory metal) film having constant thickness is sputter deposited on the silicon wafer. In the preferred embodiment, the refractory metal is titanitun-tungsten. A second metal fihn may be sputter deposited on the first metal film. The first metal fihn has a higher resistivity than the second metal film. In the preferred embodiment, the second metal is aluminum-copper. Four features may be defined using a first mask. The features are etched and the first mask is removed. Three of the four features may be further defined using a second, non-critical mask. The second metal film of the three features are wet etched and the second mask is removed to provide the four features. An intermetal oxide is deposited. The present invention maintains good barrier integrity, even as devices are scaled down into the submicron and sub-half micron regimes.
    • 本发明是一种用于提供多功能,非接触的互连技术的方法,其可以在同一金属化水平的同时制造硅晶片上的四个特征,包括扩散阻挡层,修剪元件(保险丝),更高电阻率的局部互连/ 和较低电阻率的全局互连。 该制造仅需要两次光刻操作和一次金属沉积。 在硅晶片上溅射沉积具有恒定厚度的第一金属(难熔金属)膜。 在优选实施例中,难熔金属是钛钛矿钨。 第二金属膜可以溅射沉积在第一金属膜上。 第一金属膜具有比第二金属膜更高的电阻率。 在优选实施例中,第二金属是铝 - 铜。 可以使用第一掩码来定义四个特征。 蚀刻特征并移除第一个掩模。 可以使用第二非关键掩模进一步限定四个特征中的三个。 三个特征的第二金属膜被湿蚀刻并且第二掩模被去除以提供四个特征。 沉积金属间氧化物。 本发明保持良好的屏障完整性,即使器件按比例缩小到亚微米和次半微米的方式。
    • 10. 发明申请
    • Optical Touch-Screen Imager
    • 光学触摸屏成像仪
    • US20120146947A1
    • 2012-06-14
    • US12963446
    • 2010-12-08
    • Dominic Massetti
    • Dominic Massetti
    • G06F3/042H04N5/33H04N5/335
    • G06F3/0428H04N5/2254
    • Embodiments of an apparatus comprising a CMOS image sensor including a pixel array formed in a substrate and a light guide formed on the substrate to receive light traveling in a plane parallel to a plane of the pixel array and incident on the edge of the image sensor and to re-direct the incident light into at least one pixel of the pixel array. Embodiments of an optical touch-screen imager comprising a substantially planar touch area and a detector positioned adjacent to the touch area, the detector comprising a CMOS image sensor as described above.
    • 包括CMOS图像传感器的实施例包括形成在基板中的像素阵列和形成在基板上的光导,以接收在平行于像素阵列的平面并且入射在图像传感器的边缘上的平面中行进的光;以及 将入射光重新引导到像素阵列的至少一个像素中。 光学触摸屏成像器的实施例包括基本上平面的触摸区域和邻近触摸区域定位的检测器,检测器包括如上所述的CMOS图像传感器。