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1. 发明申请

US20110235184A1 Anti-reflection structure using surface plasmon and high-K dielectric material and method of manufacturing the anti-reflection structure 有权
标题翻译：使用表面等离子体和高K介电材料的防反射结构及其制造方法
公开(公告)号：US20110235184A1
公开(公告)日：2011-09-29
申请号：US13064290
申请日：2011-03-16
申请人： Young-jun Park , Jong-min Kim , Huamin Li , Won-jong Yoo
发明人： Young-jun Park , Jong-min Kim , Huamin Li , Won-jong Yoo
IPC分类号： G02B1/11 , B05D5/06 , B05D3/02 , B82Y40/00
CPC分类号： G02B5/008 , B82Y30/00 , G02B1/11
摘要： Provided are an anti-reflection structure using surface plasmons and a high-k dielectric material, and a method of manufacturing the anti-reflection structure. The anti-reflection structure may include a high-k dielectric layer formed on a substrate, the high-k dielectric layer configured to allow incident light to pass therethrough, and a nano-material layer on the high-k dielectric layer. The high-k dielectric layer may include at least one of zirconium oxide (ZrO2), hafnium oxide (HfO2), titanium oxide (TiO2), tantalum oxide (Ta2O5), lanthanum oxide (La2O3), yttrium oxide (Y2O3) and aluminum oxide (Al2O3).
摘要翻译：提供了使用表面等离子体激元和高k介电材料的抗反射结构，以及制造抗反射结构的方法。抗反射结构可以包括形成在基板上的高k电介质层，配置成允许入射光通过的高k电介质层，以及在高k电介质层上的纳米材料层。高k电介质层可以包括氧化锆（ZrO 2），氧化铪（HfO 2），氧化钛（TiO 2），氧化钽（Ta 2 O 5），氧化镧（La 2 O 3），氧化钇（Y 2 O 3）和氧化铝（Al2O3）。

2. 发明授权

US6004882A Method for etching Pt film of semiconductor device 失效
标题翻译：蚀刻半导体器件的Pt膜的方法
公开(公告)号：US6004882A
公开(公告)日：1999-12-21
申请号：US16022
申请日：1998-01-30
申请人： Hyoun-woo Kim , Byeong-yun Nam , Byong-sun Ju , Won-jong Yoo
发明人： Hyoun-woo Kim , Byeong-yun Nam , Byong-sun Ju , Won-jong Yoo
IPC分类号： C23F4/00 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/8242 , H01L27/108
CPC分类号： H01L21/32136 , H01L21/28512
摘要： A method for etching a platinum (Pt) layer of a semiconductor device is provided which improves the etching slope of a sidewall of the platinum layer used as a storage node of the semiconductor device. The semiconductor device consists of a semiconductor substrate including a bottom layer on which various other layers are formed. Specifically, according to this invention, a Pt layer is formed on a bottom layer of a semiconductor substrate. An adhesive layer is then formed on the Pt layer while a mask layer is formed on the adhesive layer. After formation of the various layers, the mask layer and adhesive layer are patterned using an etching process to form a mask pattern and an adhesive layer mask pattern, respectively. The semiconductor substrate is then heated and an etching process is performned on the Pt layer using the mask pattern and the adhesive layer mask pattern to form etching slope sidewalls of the Pt layer having etching slopes close to vertical. Accordingly, the Pt electrodes of the semiconductor device of the present invention have a finer pattern than those of the prior art. Finally, overetching is done to remove the mask pattern.
摘要翻译：提供一种用于蚀刻半导体器件的铂（Pt）层的方法，其改善了用作半导体器件的存储节点的铂层的侧壁的蚀刻斜率。半导体器件由包括其上形成有各种其它层的底层的半导体衬底组成。具体地，根据本发明，在半导体衬底的底层上形成Pt层。然后在Pt层上形成粘合剂层，同时在粘合剂层上形成掩模层。在形成各层之后，使用蚀刻工艺对掩模层和粘合剂层进行图案化以分别形成掩模图案和粘合剂层掩模图案。然后加热半导体衬底并使用掩模图案和粘合剂层掩模图案在Pt层上进行蚀刻处理，以形成具有接近垂直的蚀刻斜率的Pt层的蚀刻斜面侧壁。因此，本发明的半导体器件的Pt电极具有比现有技术更精细的图案。最后，进行过蚀刻以去除掩模图案。

3. 发明授权

US09067783B2 Graphene-based photodetector including complex transparent electrode, method of manufacturing the same, and device including the same 有权
标题翻译：基于石墨烯的光电检测器，包括复合透明电极，其制造方法和包括该透明电极的装置
公开(公告)号：US09067783B2
公开(公告)日：2015-06-30
申请号：US13613279
申请日：2012-09-13
申请人： Jae-young Choi , Won-jong Yoo , Chang-ho Ra , Tian-zi Shen
发明人： Jae-young Choi , Won-jong Yoo , Chang-ho Ra , Tian-zi Shen
IPC分类号： H01L21/00 , G01J1/42 , B05D5/12 , B82Y30/00
CPC分类号： B82Y30/00 , G01J1/42
摘要： A photodetector includes a substrate, a graphene layer disposed on the substrate, a first electrode disposed on the graphene layer, and a second electrode disposed on the graphene layer, where the first and second electrodes are spaced apart from each other, and where each of the first and second electrodes comprises a complex transparent electrode. The complex transparent electrode of the first electrode may have a different composition from the complex transparent electrode of the second electrode.
摘要翻译：光电检测器包括基板，设置在基板上的石墨烯层，设置在石墨烯层上的第一电极和设置在石墨烯层上的第二电极，其中第一和第二电极彼此间隔开，并且其中第一和第二电极包括复合透明电极。第一电极的复合透明电极可以具有与第二电极的复合透明电极不同的组成。

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