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    • 2. 发明授权
    • Photoresist remover composition
    • 光刻胶去除剂组成
    • US06908892B2
    • 2005-06-21
    • US10297646
    • 2001-06-07
    • Suk-Il YoonYoung-Woong ParkChang-Il OhSang-Dai LeeChong-Soon Yoo
    • Suk-Il YoonYoung-Woong ParkChang-Il OhSang-Dai LeeChong-Soon Yoo
    • G03F7/42H01L21/027C11D7/32C11D7/50
    • G03F7/425
    • The present invention is a photoresist remover composition used in order to remove photoresist during the manufacturing process of semiconductor devices, such as large-scale integrated circuits and very large-scale integrated circuits. The present invention comprises 2˜20 weight % of water-soluble hydroxylamine, 5˜15 weight % of oxime compound containing 2 or 3 hydroxyl groups, and 30˜55 weight % of alkyl amide. The photoresist remover composition according to the present invention can easily and quickly remove a photoresist layer that is cured by the processes of hard-bake, dry-etching, and ashing and a side-wall photoresist polymer that is produced from the lower metal film by the reaction of the photoresist with etching and ashing gases during these processes. Especially, the photoresist remover composition has a good property of removing the side-wall photoresist polymer produced from the layers of aluminum, aluminum alloy, and titanium nitride. In addition, during removing process of photoresist, the photoresist remover composition can minimize the corrosion of lower metal film, in particular, the new metallic layers which is adopted to a production line of 64 MDRAM or more-VLSL
    • 本发明是为了在诸如大规模集成电路和大规模集成电路的半导体器件的制造过程中去除光致抗蚀剂而使用的光致抗蚀剂去除剂组合物。 本发明包含2〜20重量%的水溶性羟胺,5〜15重量%的含2或3个羟基的肟化合物和30〜55重量%的烷基酰胺。 根据本发明的光致抗蚀剂去除剂组合物可以容易且快速地除去通过硬烘烤,干蚀刻和灰化过程固化的光致抗蚀剂层和由下金属膜制备的侧壁光致抗蚀剂聚合物,通过 在这些过程中光刻胶与蚀刻和灰化气体的反应。 特别地,光刻胶去除剂组合物具有除去由铝,铝合金和氮化钛层生产的侧壁光致抗蚀剂聚合物的良好性能。 此外,在光致抗蚀剂的除去过程中,光致抗蚀剂去除剂组合物可以最小化下金属膜的腐蚀,特别是在生产线上采用的64MDRAM或更高VLSL的新金属层