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1. 发明授权

US06670949B1 Digitizer 有权
标题翻译：数字化仪
公开(公告)号：US06670949B1
公开(公告)日：2003-12-30
申请号：US09619538
申请日：2000-07-19
申请人： Young-Soo Ahn , Yun-Cheol Jeong , Young-Jin Oh
发明人： Young-Soo Ahn , Yun-Cheol Jeong , Young-Jin Oh
IPC分类号： G09G500
CPC分类号： G06F3/045
摘要： An apparatus for locating a point physically touched and producing an electrical signal corresponding to the location includes an insulating substrate; a resistor touch pattern supported on the insulating substrate; and a protective insulating plate arranged over the resistive touch pattern. The resistive touch pattern has a plurality of strip resistors parallel to a center line; a plurality of linear resistors connected to the strip resistors, the resistance of the linear resistors decreasing with distance from the center line; first and third terminals positioned on an intermediate point of alternate edges of the touch pattern; and second and fourth terminals, positioned on an intermediate point of other alternate edges of the touch pattern. The resistive value of the linear resistors selected for a corresponding strip resistor so as to produce equal potential at a corresponding selected point on all said strip resistors.
摘要翻译：用于定位物理触摸并产生对应于该位置的电信号的设备包括绝缘基板; 支撑在绝缘基板上的电阻器触摸图案; 以及布置在电阻式触摸图案上的保护绝缘板。电阻式触摸图案具有平行于中心线的多个条形电阻; 连接到带状电阻器的多个线性电阻器，线性电阻器的电阻随着距离中心线的距离而减小; 第一和第三端子位于触摸图案的交替边缘的中间点上; 以及位于触摸图案的其他交替边缘的中间点上的第二和第四端子。对于相应的带状电阻器选择的线性电阻器的电阻值，以便在所有所述条形电阻器上的相应选择点处产生相等的电位。

2. 发明授权

US06661399B1 Liquid crystal display device having a digitizer 有权
标题翻译：具有数字化仪的液晶显示装置
公开(公告)号：US06661399B1
公开(公告)日：2003-12-09
申请号：US09598606
申请日：2000-06-21
申请人： Young-Jin Oh , Yun-Cheol Jeong , Young-Soo Ahn
发明人： Young-Jin Oh , Yun-Cheol Jeong , Young-Soo Ahn
IPC分类号： G09G336
CPC分类号： G06F3/045 , G02F1/13338 , G02F2001/133334 , G06F1/1601 , G06F3/044 , G06F3/147
摘要： A liquid crystal display (LCD) device having a digitizer. A liquid crystal panel is supported by a lower frame having a side wall portion. A digitizer is located on the liquid crystal panel. An upper frame having a front surface with an opening region and a side wall portion is located over the digitizer such that the tipper frame pressurizes a peripheral portion of the digitizer. The opening region is formed at a location corresponding to the display region of the liquid crystal panel. The upper and lower frames mate to hold the liquid crystal panel and the digitizer in place. The upper frame is beneficially metallic to provide electrical shielding of conductors on the digitizer. Common electrical circuits are shared by the digitizer and the liquid crystal panel.
摘要翻译：一种具有数字转换器的液晶显示器（LCD）装置。液晶面板由具有侧壁部分的下框架支撑。数字转换器位于液晶面板上。具有开口区域和侧壁部分的前表面的上框架位于数字化仪上方，使得自卸车架对数字化仪的周边部分加压。开口区域形成在与液晶面板的显示区域对应的位置。上下框架配合以将液晶面板和数字化仪保持在适当位置。上框架是有益金属的，以提供数字化仪上导体的电屏蔽。普通电路由数字化仪和液晶面板共用。

3. 发明授权

US07009593B2 Liquid crystal display device having a digitizer 有权
标题翻译：具有数字化仪的液晶显示装置
公开(公告)号：US07009593B2
公开(公告)日：2006-03-07
申请号：US10682912
申请日：2003-10-14
申请人： Young-Jin Oh , Yun-Cheol Jeong , Young-Soo Ahn
发明人： Young-Jin Oh , Yun-Cheol Jeong , Young-Soo Ahn
IPC分类号： G09G3/36 , G09G5/00
CPC分类号： G06F3/045 , G02F1/13338 , G02F2001/133334 , G06F1/1601 , G06F3/044 , G06F3/147
摘要： The present invention discloses a first frame, a liquid crystal panel supported by the first frame, the liquid crystal panel having a display region and a side wall portion, a digitizer located on the liquid crystal panel, the digitizer having a peripheral portion, and a second frame having a front surface with an opening region and a side wall portion, the front surface pressurizing the peripheral portion of the digitizer, the opening region formed at a location corresponding to the display region of the liquid crystal panel.
摘要翻译：本发明公开了一种第一框架，由第一框架支撑的液晶面板，具有显示区域和侧壁部分的液晶面板，位于液晶面板上的数字化仪，具有周边部分的数字化仪，以及第二框架具有带有开口区域和侧壁部分的前表面，所述前表面对所述数字化仪的周边部分加压，所述开口区域形成在与所述液晶面板的显示区域对应的位置处。

4. 发明授权

US06573155B2 Contact structure of substrates of touch panel and method of bonding the same 有权
标题翻译：触摸面板基板的接触结构及其接合方法
公开(公告)号：US06573155B2
公开(公告)日：2003-06-03
申请号：US10103095
申请日：2002-03-21
申请人： Young-Soo Ahn , Young-Jin Oh
发明人： Young-Soo Ahn , Young-Jin Oh
IPC分类号： H01L2130
CPC分类号： G06F3/045 , H01H2207/004 , H01H2207/01
摘要： Process steps for bonding substrates of a touch panel. Steps include forming an insulator layer around a flexible printed cable (FPC) contact formed on electrodes, forming a low resistive metal layer, to which the FPC is attached, on the insulator layer, forming dot spacers out of insulating material within the active area. Next, connecting the FPC with a band region formed by the insulator layer and the low resistive metal layer after the insulator layer, the low resistive metal layer and the dot spacers have been formed. Finally, bonding the substrates for reading an X coordinate and for reading a Y coordinate after connection between the insulator layer, the low resistive metal layer, the dot spacers and the FPC.
摘要翻译：用于接合触摸面板的基板的工艺步骤。步骤包括在形成在电极上的柔性印刷电缆（FPC）触点周围形成绝缘体层，在绝缘体层上形成FPC附着的低电阻金属层，在有源区域内形成点绝缘体。接下来，在绝缘体层，低电阻金属层和点间隔物之后，将FPC与由绝缘体层和低电阻金属层形成的带区域连接。最后，在绝缘体层，低电阻金属层，点间隔物和FPC之间连接之后，结合用于读取X坐标的基板和用于读取Y坐标。

5. 发明授权

US06552718B2 Contact structure of substrates of touch panel and method of bonding the same 有权
公开(公告)号：US06552718B2
公开(公告)日：2003-04-22
申请号：US09993858
申请日：2001-11-14
申请人： Young-Soo Ahn , Young-Jin Oh
发明人： Young-Soo Ahn , Young-Jin Oh
IPC分类号： G09B500
CPC分类号： G06F3/045 , H01H2207/004 , H01H2207/01
摘要： A contact structure of a touch panel having X-axis (Y-axis) potential compensating electrodes arranged along peripheries of the conductive film of a substrate; a FPC contact for another substrate constructed on an electrode arrangement defined by electrodes; the electrodes arranged along outermost peripheries of the transparent conductive film of the another substrate; and another FPC contact for the another substrate constructed on the electrode arrangement defined by the electrodes arranged on the film of the another substrate. A method for bonding the substrates of the touch panel includes forming an insulator layer around a flexible printed cable (FPC) contact formed on the electrodes; forming a new low resistive metal layer, to which the FPC is attached, on the insulator layer; forming dot spacers out of insulating material within the active area so as to achieve electric insulation between the substrates; connecting the FPC with a band region formed by the insulator layer and the low resistive metal layer, in order to apply signals to the substrates from the outside after the insulator layer, the low resistive: metal layer and the dot spacers have been formed between the substrates; and bonding together the substrate for reading an X coordinate and the another substrate for reading a Y coordinate so that the transparent conductive films can face each other, after connection between the insulator layer, the low resistive metal layer, the dot spacers and the FPC.

6. 发明申请

US20130161783A1 SEMICONDUCTOR DEVICE INCLUDING ISOLATION LAYER AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：包括隔离层的半导体器件及其制造方法
公开(公告)号：US20130161783A1
公开(公告)日：2013-06-27
申请号：US13605874
申请日：2012-09-06
申请人： Jeong-Seob OH , Young-Soo Ahn
发明人： Jeong-Seob OH , Young-Soo Ahn
IPC分类号： H01L21/762 , H01L29/06
CPC分类号： H01L21/76224
摘要： A semiconductor device includes an isolation trench formed in a semiconductor substrate; an isolation layer filling the isolation trench; and a first epitaxial layer interposed between the isolation layer and the semiconductor substrate, wherein a lattice structure of the semiconductor substrate has an angle difference from a lattice structure of the first epitaxial layer adjacent to the semiconductor substrate.
摘要翻译：半导体器件包括形成在半导体衬底中的隔离沟槽; 填充隔离沟槽的隔离层; 以及插入在所述隔离层和所述半导体衬底之间的第一外延层，其中所述半导体衬底的晶格结构与所述第一外延层的与所述半导体衬底相邻的晶格结构具有角度差。

7. 发明申请

US20120025127A1 Aerogel Mat and Manufacturing Method Thereof 有权
标题翻译：气凝胶垫及其制造方法
公开(公告)号：US20120025127A1
公开(公告)日：2012-02-02
申请号：US13258225
申请日：2010-06-10
申请人： Jeong-Gu Yeo , Young-Soo Ahn , Churl-Hee Cho , Jeong Min Hong
发明人： Jeong-Gu Yeo , Young-Soo Ahn , Churl-Hee Cho , Jeong Min Hong
IPC分类号： E04B1/82 , B01J8/00
CPC分类号： C01B33/1585 , C01B33/155 , C01B33/157 , Y02P20/544
摘要： The present invention relates to a method of manufacturing a mat containing aerogel and to a mat manufactured using this method. A method of manufacturing a mat containing silica aerogel according to an aspect of the invention includes: (S1) producing a wet gel by mixing water glass and alcohol in a reactor; (S2) modifying a surface of the wet gel by adding an organic silane compound and an organic solvent to the reactor and mixing; (S3) separating a upper liquid from a solution in the reactor and impregnating a fibrous matrix with the upper liquid; and (S4) drying the fibrous matrix impregnated with the upper liquid. According to an aspect of the invention, a mat containing silica aerogel can be manufactured using only water glass as raw material, even when applying the drying process in an ambient environment, without using expensive materials or supercritical apparatus.
摘要翻译：本发明涉及一种制造含有气凝胶的垫的方法和使用该方法制造的垫。根据本发明的一个方面的制备含有二氧化硅气凝胶的垫的方法包括：（S1）通过在反应器中混合水玻璃和醇来生产湿凝胶; （S2）通过向反应器中加入有机硅烷化合物和有机溶剂并混合来改性湿凝胶的表面; （S3）将上液体与反应器中的溶液分离，并用上液体浸渍纤维基质; 和（S4）干燥浸渍有上层液体的纤维基质。根据本发明的一个方面，即使在不使用昂贵的材料或超临界设备的情况下在周围环境中进行干燥处理，也可以仅使用水玻璃作为原料来制造含有二氧化硅气凝胶的垫。

8. 发明授权

US09024372B2 Nonvolatile memory device and method for fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US09024372B2
公开(公告)日：2015-05-05
申请号：US13608856
申请日：2012-09-10
申请人： Young-Soo Ahn , Jeong-Seob Oh
发明人： Young-Soo Ahn , Jeong-Seob Oh
IPC分类号： H01L29/788 , H01L27/115
CPC分类号： H01L27/11556 , H01L27/11524 , H01L29/66666 , H01L29/66825
摘要： A nonvolatile memory device includes: a channel layer protruding perpendicular to a surface of a substrate; a tunnel insulation layer formed on a surface of the channel layer; a stack structure, in which a plurality of floating gate electrodes and a plurality of control gate electrodes are alternately formed along the channel layer; and a charge blocking layer interposed between each floating gate electrode, of the plurality of floating gate electrodes, and each control gate electrode of the plurality of control gate electrodes, wherein the floating gate electrode includes a first floating gate electrode between two control gate electrodes and a second floating gate electrode positioned in the lowermost and uppermost parts of the stack structure and having a smaller width in a direction parallel to the substrate than the first floating gate electrode.
摘要翻译：非易失性存储器件包括：垂直于衬底表面突出的沟道层; 形成在沟道层的表面上的隧道绝缘层; 堆叠结构，其中多个浮栅电极和多个控制栅电极沿沟道层交替形成; 以及插入在所述多个浮置栅电极中的每个浮置栅极电极和所述多个控制栅极电极的每个控制栅极电极之间的电荷阻挡层，其中所述浮置栅极电极包括位于两个控制栅极电极之间的第一浮栅电极和位于所述堆叠结构的最下部和最上部的第二浮栅电极，在与所述第一浮栅相平行的方向上具有较小的宽度。

9. 发明授权

US09040010B2 Apparatus for manufacturing single crystal silicon ingot having reusable dual crucible for silicon melting 有权
标题翻译：用于制造具有可重复使用的用于硅熔化的双坩埚的单晶硅锭的装置
公开(公告)号：US09040010B2
公开(公告)日：2015-05-26
申请号：US13267490
申请日：2011-10-06
申请人： Jin-Seok Lee , Bo-Yun Jang , Young-Soo Ahn
发明人： Jin-Seok Lee , Bo-Yun Jang , Young-Soo Ahn
IPC分类号： C01B33/02 , C30B15/18 , C30B15/30 , C30B15/10 , C30B29/06 , C30B35/00
CPC分类号： C30B29/06 , C30B15/10 , C30B35/002 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.
摘要翻译：本公开提供了一种用于制造具有用于硅熔化的双坩埚的单晶硅锭的装置，其可由于双坩埚结构而被再利用。该装置包括用于硅熔化的双坩埚，其中加入原料硅，加热双坩埚以将原料硅熔化成熔融硅的坩埚加热器，控制双坩埚旋转和升高的坩埚驱动单元，设置在双坩埚上方并拉出浸入熔融硅中的晶种以产生硅锭。双坩埚具有在其上侧开口的容器形状，并且包括具有连接内底和内壁的倾斜表面的石墨坩埚和插入到石墨坩埚中并接收装入双重坩埚的原料硅的石英坩埚坩。

10. 发明授权

US08921182B2 Method for fabricating 3D nonvolatile memory device with vertical channel hole 有权
标题翻译：用于制造具有垂直通道孔的3D非易失性存储器件的方法
公开(公告)号：US08921182B2
公开(公告)日：2014-12-30
申请号：US13604436
申请日：2012-09-05
申请人： Sung-Wook Jung , Yun-Kyoung Lee , Young-Soo Ahn , Tae-Hwa Lee
发明人： Sung-Wook Jung , Yun-Kyoung Lee , Young-Soo Ahn , Tae-Hwa Lee
IPC分类号： H01L21/336
CPC分类号： H01L27/11582 , H01L29/66833 , H01L29/7926
摘要： A method for fabricating a nonvolatile memory device includes forming a stacked structure having a plurality of interlayer dielectric layers and a plurality of sacrificial layers wherein interlayer dielectric layers and sacrificial layers are alternately stacked over a substrate, forming a first hole exposing a part of the substrate by selectively etching the stacked structure, forming a first insulation layer in the first hole, forming a second hole exposing the part of the substrate by selectively etching the first insulation layer, and forming a channel layer in the second hole.
摘要翻译：一种制造非易失性存储器件的方法包括形成具有多个层间电介质层和多个牺牲层的叠层结构，其中层间绝缘层和牺牲层交替堆叠在衬底上，形成暴露衬底的一部分的第一孔通过选择性地蚀刻层叠结构，在第一孔中形成第一绝缘层，通过选择性地蚀刻第一绝缘层形成露出基板的一部分的第二孔，并在第二孔中形成沟道层。

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