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1. 发明申请

US20090180044A1 THIN FILM TRANSISTOR SUBSTRATE, LIQUID CRYSTAL DISPLAY HAVING THE SAME, AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜晶体管基板，具有该液晶显示器的液晶显示器及其制造方法
公开(公告)号：US20090180044A1
公开(公告)日：2009-07-16
申请号：US12324172
申请日：2008-11-26
申请人： Young-Min KIM , Bo-Sung Kim , Jung-Han Shin , Tae-Young Choi , Bo-Kyoung Ahn
发明人： Young-Min KIM , Bo-Sung Kim , Jung-Han Shin , Tae-Young Choi , Bo-Kyoung Ahn
IPC分类号： H01L51/10 , G02F1/1368 , H01L51/40
CPC分类号： H01L51/0545 , G02F1/1368 , H01L51/107
摘要： A thin film transistor substrate includes a gate line arranged on a substrate, a data line arranged to cross the gate line, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode spaced apart from the source electrode, and an organic semiconductor layer forming a channel between the source electrode and the drain electrode, a pixel electrode connected to the drain electrode, and an organic passivation layer to protect the organic semiconductor layer and to receive a white light and transmit a colored light.
摘要翻译：薄膜晶体管基板包括布置在基板上的栅极线，布置成跨越栅极线的数据线，包括连接到栅极线的栅电极的有机薄膜晶体管，连接到数据线的源电极，漏极与源电极间隔开的电极，以及在源电极和漏极之间形成沟道的有机半导体层，连接到漏电极的像素电极和有机钝化层，以保护有机半导体层并接收白色点亮并传送彩色光。

2. 发明申请

US20100308326A1 THIN-FILM TRANSISTOR ARRAY PANEL AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20100308326A1
公开(公告)日：2010-12-09
申请号：US12790188
申请日：2010-05-28
申请人： Young-Min KIM , Bo-Sung Kim , Yeon-Taek Jeong , Tae-Young Choi , Seon-Pil Jang , Seung-Hwan Cho , Bo-Kyoung Ahn , Byeong-Soo Bae , Seok-Jun Seo
发明人： Young-Min KIM , Bo-Sung Kim , Yeon-Taek Jeong , Tae-Young Choi , Seon-Pil Jang , Seung-Hwan Cho , Bo-Kyoung Ahn , Byeong-Soo Bae , Seok-Jun Seo
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L27/1225 , H01L21/02554 , H01L21/02565 , H01L21/02628 , H01L29/7869
摘要： A thin-film transistor array panel includes: an insulating substrate; an oxide semiconductor layer that is formed on the insulating substrate and includes a metal inorganic salt and zinc acetate; a gate electrode overlapping with the oxide semiconductor layer; a gate insulating film that is interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode that at least partially overlap the oxide semiconductor layer and are separated from each other.
摘要翻译：薄膜晶体管阵列面板包括：绝缘基板; 形成在所述绝缘基板上并且包括金属无机盐和乙酸锌的氧化物半导体层; 栅电极与氧化物半导体层重叠; 介于氧化物半导体层和栅电极之间的栅极绝缘膜; 以及与氧化物半导体层至少部分重叠并且彼此分离的源电极和漏电极。

3. 发明申请

US20080241990A1 METHOD FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR SUBSTRATE 有权
标题翻译：制造有机薄膜晶体管基板的方法
公开(公告)号：US20080241990A1
公开(公告)日：2008-10-02
申请号：US12051530
申请日：2008-03-19
申请人： Young-Min KIM , Bo-Sung Kim , Bo-Kyoung Ahn
发明人： Young-Min KIM , Bo-Sung Kim , Bo-Kyoung Ahn
IPC分类号： H01L51/40
CPC分类号： H01L51/0002 , H01L51/0545
摘要： A method for manufacturing an organic thin film transistor substrate comprising forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, defining a channel region on the gate insulating layer between a source electrode and a drain electrode, neutralizing the channel region, forming a bank insulating layer on the source electrode and the drain electrode, and forming an organic semiconductor layer in a region prepared by the bank insulating layer.
摘要翻译：一种制造有机薄膜晶体管衬底的方法，包括在衬底上形成栅电极，在栅电极上形成栅极绝缘层，在源电极和漏电极之间的栅极绝缘层上限定沟道区，中和沟道区域，在源电极和漏电极上形成堤绝缘层，并在由绝缘层制备的区域中形成有机半导体层。

4. 发明授权

US07727797B2 Method for manufacturing organic thin film transistor substrate 有权
标题翻译：制造有机薄膜晶体管基板的方法
公开(公告)号：US07727797B2
公开(公告)日：2010-06-01
申请号：US12051530
申请日：2008-03-19
申请人： Young-Min Kim , Bo-Sung Kim , Bo-Kyoung Ahn
发明人： Young-Min Kim , Bo-Sung Kim , Bo-Kyoung Ahn
IPC分类号： H01L51/40
CPC分类号： H01L51/0002 , H01L51/0545
摘要： A method for manufacturing an organic thin film transistor substrate comprising forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, defining a channel region on the gate insulating layer between a source electrode and a drain electrode, neutralizing the channel region, forming a bank insulating layer on the source electrode and the drain electrode, and forming an organic semiconductor layer in a region prepared by the bank insulating layer.
摘要翻译：一种制造有机薄膜晶体管衬底的方法，包括在衬底上形成栅电极，在栅电极上形成栅极绝缘层，在源电极和漏电极之间的栅极绝缘层上限定沟道区，中和沟道区域，在源电极和漏电极上形成堤绝缘层，并在由绝缘层制备的区域中形成有机半导体层。

5. 发明申请

US20100128190A1 Liquid Crystal Display and Manufacturing Method of the Same 审中-公开
标题翻译：液晶显示及其制造方法
公开(公告)号：US20100128190A1
公开(公告)日：2010-05-27
申请号：US12431503
申请日：2009-04-28
申请人： Bo-Kyoung Ahn , Bo-Sung Kim , Young-Min Kim , Nam-Ok Jung , Seung-Hwan Cho
发明人： Bo-Kyoung Ahn , Bo-Sung Kim , Young-Min Kim , Nam-Ok Jung , Seung-Hwan Cho
IPC分类号： G02F1/1368 , H01L21/336
CPC分类号： G02F1/13394 , G02F1/133707 , G02F1/136227
摘要： Disclosed is a liquid crystal display including a first substrate, a second substrate facing the first substrate, a thin film transistor formed on the first substrate and including a semiconductor layer, a convex pattern formed on the semiconductor layer and provided at a side surface thereof with a concave-convex section, and a liquid crystal layer interposed between the first and second substrates.
摘要翻译：公开了一种液晶显示器，包括第一基板，面对第一基板的第二基板，形成在第一基板上并包括半导体层的薄膜晶体管，形成在半导体层上并在其侧表面上设置的凸起图案，凹凸部分和插在第一和第二基板之间的液晶层。

6. 发明授权

US07777220B2 Organic thin film transistor array panel 有权
标题翻译：有机薄膜晶体管阵列面板
公开(公告)号：US07777220B2
公开(公告)日：2010-08-17
申请号：US12148485
申请日：2008-04-17
申请人： Tae-Young Choi , Soo-Wan Yoon , Bo-Kyoung Ahn
发明人： Tae-Young Choi , Soo-Wan Yoon , Bo-Kyoung Ahn
IPC分类号： H01L51/52
CPC分类号： H01L51/0003 , H01L27/283 , H01L51/0545
摘要： An organic thin film transistor array panel includes a substrate, a gate line formed on the substrate and including a gate electrode. A gate insulating layer is formed on the gate electrode and a data line is formed on the gate insulating layer, intersecting the gate line, and including a drain electrode. A source electrode is formed on the gate insulating layer and is spaced apart from the drain electrode, enclosed by the drain electrode. A bank insulating layer includes a first opening exposing the drain electrode and the source electrode and a second opening which exposes at least a portion of the source electrode. An organic semiconductor is formed in the first opening and contacts the drain electrode and the source electrode. A pixel electrode contacts the source electrode through the second opening.
摘要翻译：有机薄膜晶体管阵列面板包括基板，形成在基板上并包括栅电极的栅极线。在栅电极上形成栅极绝缘层，并且在栅极绝缘层上形成数据线，与栅极线相交，并且包括漏电极。源电极形成在栅极绝缘层上，并与漏电极间隔开，由漏电极包围。堤绝缘层包括露出漏电极和源电极的第一开口和暴露源电极的至少一部分的第二开口。在第一开口中形成有机半导体，并与漏电极和源电极接触。像素电极通过第二开口接触源电极。

7. 发明申请

US20090026444A1 Organic thin film transistor array panel and manufacturing method of the same 有权
标题翻译：有机薄膜晶体管阵列面板及其制造方法相同
公开(公告)号：US20090026444A1
公开(公告)日：2009-01-29
申请号：US12148485
申请日：2008-04-17
申请人： Tae-Young Choi , Soo-Wan Yoon , Bo-Kyoung Ahn
发明人： Tae-Young Choi , Soo-Wan Yoon , Bo-Kyoung Ahn
IPC分类号： H01L51/52 , H01L51/56
CPC分类号： H01L51/0003 , H01L27/283 , H01L51/0545
摘要： An organic thin film transistor array panel includes a substrate, a gate line formed on the substrate and including a gate electrode. A gate insulating layer is formed on the gate electrode and a data line is formed on the gate insulating layer, intersecting the gate line, and including a drain electrode. A source electrode is formed on the gate insulating layer and is spaced apart from the drain electrode, enclosed by the drain electrode. A bank insulating layer includes a first opening exposing the drain electrode and the source electrode and a second opening which exposes at least a portion of the source electrode. An organic semiconductor is formed in the first opening and contacts the drain electrode and the source electrode. A pixel electrode contacts the source electrode through the second opening.
摘要翻译：有机薄膜晶体管阵列面板包括基板，形成在基板上并包括栅电极的栅极线。在栅电极上形成栅极绝缘层，并且在栅极绝缘层上形成数据线，与栅极线相交，并且包括漏电极。源电极形成在栅极绝缘层上，并与漏电极间隔开，由漏电极包围。堤绝缘层包括露出漏电极和源电极的第一开口和暴露源电极的至少一部分的第二开口。在第一开口中形成有机半导体，并与漏电极和源电极接触。像素电极通过第二开口接触源电极。

8. 发明授权

US08460985B2 Method of manufacturing semiconductor for transistor and method of manufacturing the transistor 有权
标题翻译：晶体管半导体的制造方法及晶体管的制造方法
公开(公告)号：US08460985B2
公开(公告)日：2013-06-11
申请号：US12829977
申请日：2010-07-02
申请人： Bo-Kyoung Ahn , Seon-Pil Jang , Gug-Rae Jo , Hong-Suk Yoo , Chang-Hoon Kim , Min-Uk Kim , Ju-Han Bae
发明人： Bo-Kyoung Ahn , Seon-Pil Jang , Gug-Rae Jo , Hong-Suk Yoo , Chang-Hoon Kim , Min-Uk Kim , Ju-Han Bae
IPC分类号： H01L21/336
CPC分类号： H01L21/02628 , C23C18/1212 , C23C18/1216 , C23C18/14 , H01L21/02554 , H01L21/02565 , H01L21/02614 , H01L21/268 , H01L27/1225 , H01L29/7869
摘要： A method of manufacturing a semiconductor for a transistor that includes forming a precursor layer by coating a surface of an insulation substrate with a precursor solution for an oxide semiconductor, forming an oxide semiconductor by oxidizing a portion of the precursor layer, and removing a remaining precursor layer except for the oxide semiconductor.
摘要翻译：一种制造用于晶体管的半导体的方法，其包括通过用氧化物半导体的前体溶液涂覆绝缘基板的表面来形成前体层，通过氧化前体层的一部分形成氧化物半导体，以及除去剩余的前体除了氧化物半导体。

9. 发明授权

US08367281B2 Method of exposing substrate, apparatus for performing the same, and method of manufacturing display substrate using the same 有权
标题翻译：曝光基板的方法，其制造方法以及使用其制造显示基板的方法
公开(公告)号：US08367281B2
公开(公告)日：2013-02-05
申请号：US12778574
申请日：2010-05-12
申请人： Bo-Kyoung Ahn , Gug-Rae Jo , Hong-Suk Yoo , Chang-Hoon Kim , Min-Uk Kim , Joo-Han Bae
发明人： Bo-Kyoung Ahn , Gug-Rae Jo , Hong-Suk Yoo , Chang-Hoon Kim , Min-Uk Kim , Joo-Han Bae
IPC分类号： G03F7/20 , G02B5/20
CPC分类号： G03B27/72 , G02F1/133516 , G03F7/7035 , G03F7/70558 , G03F7/70575
摘要： A photoresist layer exposed through first slits of a mask is exposed using first light. The photoresist layer exposed through second slits of the mask is exposed by using second light. The first light passes thorough a transflective shutter to generate the second light.
摘要翻译：通过第一光照射通过掩模的第一狭缝曝光的光致抗蚀剂层。通过使用第二光来曝光通过掩模的第二狭缝曝光的光致抗蚀剂层。第一个光通过透反射快门以产生第二个光。

10. 发明申请

US20120086930A1 PHOTOLITHOGRAPHY EXPOSURE APPARATUS HAVING BLINDING PLATES AND METHOD OF DRIVING THE SAME 失效
标题翻译：具有发泡板的光刻曝光装置及其驱动方法
公开(公告)号：US20120086930A1
公开(公告)日：2012-04-12
申请号：US13086293
申请日：2011-04-13
申请人： Chang-Hoon KIM , Bo-Kyoung Ahn , Hong-Suk Yoo
发明人： Chang-Hoon KIM , Bo-Kyoung Ahn , Hong-Suk Yoo
IPC分类号： G03B27/72
CPC分类号： G03F7/2008 , G03F7/7055
摘要： An exposure apparatus includes a light source for providing bursts of photolithographic exposure light, a mask for applying a pattern to the photolithographic exposure light, a variable length blind for blocking parts of an exposure window from receiving the photolithographic exposure light and a blind driver for controllably driving the variable length blind. The blind includes a plurality of movable blocking plates. The blind driver includes a plurality of motors and a motor control unit which are structured to rapidly return one or more of the blocking plates through the exposure window in a time duration between the bursts of photolithographic exposure light so that a return stain is not formed on the substrate. In one embodiment, the substrate is a mother substrate having a plurality of LCD daughter substrates being formed thereon.
摘要翻译：曝光装置包括用于提供光刻曝光光的脉冲的光源，用于向光刻曝光灯施加图案的掩模，用于阻挡曝光窗口的部分的可变长度遮光板接收光刻曝光灯和盲控制器驾驶可变长度盲人。盲板包括多个可移动阻挡板。盲驱动器包括多个电动机和电动机控制单元，其被构造为在光刻曝光光的脉冲之间的时间段内快速返回一个或多个阻挡板通过曝光窗，使得不会在底物。在一个实施例中，基板是在其上形成有多个LCD子基板的母基板。

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