会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • PHOTONIC INTEGRATION SCHEME
    • 光电整合方案
    • US20100216275A1
    • 2010-08-26
    • US12391039
    • 2009-02-23
    • Christopher Richard DoerrLiming Zhang
    • Christopher Richard DoerrLiming Zhang
    • H01L31/18H01L21/02
    • H01L31/109G02B6/12004H01L31/0232H01L31/1035
    • Provided is an apparatus and method for manufacture thereof. The apparatus includes a passive optical waveguide structure and a photodiode detector structure. The structures are located on a substrate, and the photodiode detector is laterally proximate to the semiconductor passive waveguide structure. The passive optical waveguide structure includes a first lateral portion of a semiconductor optical core layer on the substrate, a semiconductor upper optical cladding layer on the optical core layer, and a first lateral portion of a doped semiconductor layer on the upper optical cladding layer. The photodiode detector structure includes a second lateral portion of the semiconductor optical core layer, a semiconductor optical absorber layer on the optical core layer, and a second lateral portion of the doped semiconductor layer.
    • 提供了一种其制造的装置和方法。 该装置包括无源光波导结构和光电二极管检测器结构。 该结构位于衬底上,光电二极管检测器横向靠近半导体无源波导结构。 无源光波导结构包括基板上的半导体光芯层的第一横向部分,光学芯层上的半导体上部光学包层,以及上部光学包层上的掺杂半导体层的第一侧向部分。 光电二极管检测器结构包括半导体光芯层的第二横向部分,光芯层上的半导体光吸收层和掺杂半导体层的第二横向部分。
    • 3. 发明授权
    • Photonic integration scheme
    • 光子整合方案
    • US07919349B2
    • 2011-04-05
    • US12391039
    • 2009-02-23
    • Christopher Richard DoerrLiming Zhang
    • Christopher Richard DoerrLiming Zhang
    • H01L21/00H01S5/00
    • H01L31/109G02B6/12004H01L31/0232H01L31/1035
    • Provided is an apparatus and method for manufacture thereof. The apparatus includes a passive optical waveguide structure and a photodiode detector structure. The structures are located on a substrate, and the photodiode detector is laterally proximate to the semiconductor passive waveguide structure. The passive optical waveguide structure includes a first lateral portion of a semiconductor optical core layer on the substrate, a semiconductor upper optical cladding layer on the optical core layer, and a first lateral portion of a doped semiconductor layer on the upper optical cladding layer. The photodiode detector structure includes a second lateral portion of the semiconductor optical core layer, a semiconductor optical absorber layer on the optical core layer, and a second lateral portion of the doped semiconductor layer.
    • 提供了一种其制造的装置和方法。 该装置包括无源光波导结构和光电二极管检测器结构。 该结构位于衬底上,光电二极管检测器横向靠近半导体无源波导结构。 无源光波导结构包括基板上的半导体光芯层的第一横向部分,光学芯层上的半导体上部光学包层,以及上部光学包层上的掺杂半导体层的第一侧向部分。 光电二极管检测器结构包括半导体光芯层的第二横向部分,光芯层上的半导体光吸收层和掺杂半导体层的第二横向部分。