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1. 发明申请

US20080023653A1 Plasma based ion implantation apparatus 审中-公开
标题翻译：等离子体离子注入装置
公开(公告)号：US20080023653A1
公开(公告)日：2008-01-31
申请号：US11603100
申请日：2006-11-22
申请人： Young dong Lee , Yuri Tolmachev , Vladimir Volynets , Vasily Pashkovskiy
发明人： Young dong Lee , Yuri Tolmachev , Vladimir Volynets , Vasily Pashkovskiy
IPC分类号： G21K5/08
CPC分类号： H01J37/321 , H01J37/32412
摘要： A plasma based ion implantation apparatus. The apparatus includes a first chamber in which plasma is generated, a coil antenna to generate the plasma in the first chamber, a second chamber in which ions of the plasma are implanted into a target, the second chamber having an incoming port through which the plasma is diffused from the first chamber to the second chamber, a power source to supply high voltage power to the target in the second chamber, and a grounded conductor positioned to face the target seated on the seating table. The first chamber is formed with a ring shape opening of a predetermined width at an upper periphery of the second chamber to communicate with the second chamber.
摘要翻译：一种基于等离子体的离子注入装置。该装置包括其中产生等离子体的第一室，用于在第一室中产生等离子体的线圈天线，其中将等离子体的离子注入到靶中的第二室，第二室具有入口，等离子体从所述第一室扩散到所述第二室，电源，用于向所述第二室中的所述目标提供高压电力;以及接地导体，其定位成面对所述坐在所述座台上的所述目标。第一室在第二室的上周边形成具有预定宽度的环形开口，以与第二室连通。

2. 发明申请

US20080289576A1 Plasma based ion implantation system 审中-公开
标题翻译：等离子体离子注入系统
公开(公告)号：US20080289576A1
公开(公告)日：2008-11-27
申请号：US12153703
申请日：2008-05-22
申请人： Young dong Lee , Yuri Tolmachev , Vladimir Volynets , Vasily Pashkovskiy , Andrey Ushakov , Gyeong Su Keum , Jae Hyun Han , Dong Cheol Kim , Hyung Chul Cho
发明人： Young dong Lee , Yuri Tolmachev , Vladimir Volynets , Vasily Pashkovskiy , Andrey Ushakov , Gyeong Su Keum , Jae Hyun Han , Dong Cheol Kim , Hyung Chul Cho
IPC分类号： C23C16/44
CPC分类号： H01J37/32449 , H01J37/32357 , H01J37/32412 , H01J37/3244 , H01J37/3255 , H01J37/32862 , H01L21/2236
摘要： A plasma based ion implantation system capable of generating a capacitively coupled plasma having beneficial characteristics for an ion implantation, including the generation of necessary ions and radicals only for an ion implantation process instead of generating an inductively coupled plasma, which generates unnecessary ions and excessively dissociates radicals. The plasma based ion implantation system easily controls plasma ions implanted by cleaning a vacuum chamber, minimizes problems of unnecessary deposition and occurrence of contaminants and increases the number of components used only for the plasma ion implantion by reducing the deposition of polymer layer on a workpiece. The plasma based ion implantation system easily control uniformity of the plasma by using a flat type electrode, thereby easily ensuring uniformity of plasma ions implanted into the workpiece.
摘要翻译：一种等离子体离子注入系统，其能够产生具有用于离子注入的有利特性的电容耦合等离子体，包括仅为离子注入工艺产生必需的离子和自由基，而不是产生电感耦合等离子体，其产生不必要的离子并过度离解激进分子基于等离子体的离子注入系统容易地通过清洁真空室来控制植入的等离子体离子，从而最小化不必要的沉积和污染物的出现的问题，并且通过减少聚合物层在工件上的沉积而增加仅用于等离子体离子注入的组分的数量。基于等离子体的离子注入系统通过使用平面型电极容易地控制等离子体的均匀性，从而容易地确保注入到工件中的等离子体离子的均匀性。

3. 发明申请

US20080061702A1 APPARATUS AND METHOD TO GENERATE PLASMA 有权
标题翻译：装置和方法生成等离子体
公开(公告)号：US20080061702A1
公开(公告)日：2008-03-13
申请号：US11684199
申请日：2007-03-09
申请人： Andrey Ushakov , Yuri Tolmachev , Vladimir Volynets , Won Ceak Pak , Vasily Pashkovskiy , Sung Chang Park , Yung Hee Lee
发明人： Andrey Ushakov , Yuri Tolmachev , Vladimir Volynets , Won Ceak Pak , Vasily Pashkovskiy , Sung Chang Park , Yung Hee Lee
IPC分类号： H05H1/00
CPC分类号： H01J37/321 , H01J37/32091
摘要： An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.
摘要翻译：一种可应用于半导体处理的等离子体生成装置和方法。该装置包括具有限定在其中的等离子体产生空间的腔室，位于腔室内的下部电极，面对下部电极的上部电极，并设置在腔室内以构成第一等离子体发生源，第二等离子体发生源位于较高位于上电极的下表面，并且设置在上电极的外周;以及电源，用于向第一和第二等离子体发生源供电。

4. 发明授权

US07804250B2 Apparatus and method to generate plasma 有权
标题翻译：用于产生等离子体的装置和方法
公开(公告)号：US07804250B2
公开(公告)日：2010-09-28
申请号：US11684199
申请日：2007-03-09
申请人： Andrey Ushakov , Yuri Tolmachev , Vladimir Volynets , Won Ceak Pak , Vasily Pashkovskiy , Sung Chang Park , Yung Hee Lee
发明人： Andrey Ushakov , Yuri Tolmachev , Vladimir Volynets , Won Ceak Pak , Vasily Pashkovskiy , Sung Chang Park , Yung Hee Lee
IPC分类号： H05B6/00
CPC分类号： H01J37/321 , H01J37/32091
摘要： An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.
摘要翻译：一种可应用于半导体处理的等离子体生成装置和方法。该装置包括具有限定在其中的等离子体产生空间的腔室，位于腔室内的下部电极，面对下部电极的上部电极，并设置在腔室内以构成第一等离子体发生源，第二等离子体发生源位于较高位于上电极的下表面，并且设置在上电极的外周;以及电源，用于向第一和第二等离子体发生源供电。

5. 发明申请

US20080032427A1 ION ANALYSIS SYSTEM BASED ON ANALYZER OF ION ENERGY DISTRIBUTION USING RETARDED ELECTRIC FIELD 审中-公开
标题翻译：基于分析电力离子分析系统的离子分析系统
公开(公告)号：US20080032427A1
公开(公告)日：2008-02-07
申请号：US11751812
申请日：2007-05-22
申请人： Yung Hee Lee , Andrey Ushakov , Yuri Tolmachev , Vladimir Volynets , Won Ceak Pak , Vasily Pashkovskiy
发明人： Yung Hee Lee , Andrey Ushakov , Yuri Tolmachev , Vladimir Volynets , Won Ceak Pak , Vasily Pashkovskiy
IPC分类号： H01L21/66
CPC分类号： H01L21/67069 , H01J37/32412 , H01J37/32422 , H01L21/67253
摘要： An ion analysis system to measure ion energy distribution at several points during a process of manufacturing a semiconductor circuit includes at least two ion flux sensors combined in a single system to measure an ion energy distribution function, each of the ion flux sensors having cells including an opening of 50 micrometers or less.
摘要翻译：一种用于在制造半导体电路的过程中测量几个点处的离子能量分布的离子分析系统包括组合在单个系统中以测量离子能量分布函数的至少两个离子通量传感器，每个离子通量传感器具有包括开口为50微米以下。

6. 发明申请

US20100065215A1 Plasma generating apparatus 审中-公开
标题翻译：等离子体发生装置
公开(公告)号：US20100065215A1
公开(公告)日：2010-03-18
申请号：US12585098
申请日：2009-09-03
申请人： Sang Jean Jeon , Yuri Tolmachev , Vasily Pashkovskiy , Kee Soo Park , Ju Hyun Lee , Su Ho Lee , Chan Yun Lee
发明人： Sang Jean Jeon , Yuri Tolmachev , Vasily Pashkovskiy , Kee Soo Park , Ju Hyun Lee , Su Ho Lee , Chan Yun Lee
IPC分类号： C23C16/513 , H01L21/3065
CPC分类号： H01J37/32357 , H01J37/321
摘要： A plasma generating apparatus including a plurality of plasma source modules. Each plasma source module includes a ferrite core having high magnetic permeability and a plasma channel through which plasma may pass. The plasma generating apparatus may effectively generate and uniformly distribute large-area and high-density plasma without a dielectric window.
摘要翻译：一种等离子体发生装置，包括多个等离子体源模块。每个等离子体源模块包括具有高磁导率的铁氧体磁芯和等离子体可通过的等离子体通道。等离子体发生装置可以有效地产生并且均匀分布大面积和高密度的等离子体而不需要电介质窗口。

7. 发明申请

US20070114903A1 Multi-channel plasma accelerator 审中-公开
标题翻译：多通道等离子体加速器
公开(公告)号：US20070114903A1
公开(公告)日：2007-05-24
申请号：US11452930
申请日：2006-06-15
申请人： Yuri Tolmachev , Vasily Pashkovski
发明人： Yuri Tolmachev , Vasily Pashkovski
IPC分类号： H01J17/26 , H01J61/28
CPC分类号： H05H1/54 , F03H1/0075
摘要： A multi-channel plasma accelerator is provided. The multi-channel plasma accelerator includes a central cylinder formed along a surface comprising a blocked upper surface so as to form a first channel inside the cylinder; and first and second outer cylinders formed along the surface, each having an identical coaxial shaft to the central cylinder, and a diameter of the first outer cylinder being larger than a diameter of the central cylinder and a diameter of the second outer cylinder being larger than the diameter of the first outer cylinder so as to form a second channel as a space between the first and second outer cylinders.
摘要翻译：提供多通道等离子体加速器。多通道等离子体加速器包括沿着包括阻挡的上表面的表面形成的中心圆筒，以在圆筒内形成第一通道; 以及沿着表面形成的第一和第二外部圆柱体，每个具有与中心圆柱体相同的同轴轴，并且第一外部圆柱体的直径大于中心圆柱体的直径，而第二外部圆柱体的直径大于第一外筒的直径，以形成作为第一和第二外筒之间的空间的第二通道。

8. 发明授权

US08169148B2 Plasma generating apparatus 有权
标题翻译：等离子体发生装置
公开(公告)号：US08169148B2
公开(公告)日：2012-05-01
申请号：US12149450
申请日：2008-05-01
申请人： Sang Jean Jeon , Yuri Tolmachev , Su Ho Lee , Seoung Hyun Seok , Young Min Park , Won Hyuk Jang
发明人： Sang Jean Jeon , Yuri Tolmachev , Su Ho Lee , Seoung Hyun Seok , Young Min Park , Won Hyuk Jang
IPC分类号： H01J7/24
CPC分类号： H01J37/32165 , H01J37/321
摘要： A plasma generating apparatus having superior plasma generation efficiency that uses a single reaction chamber. The plasma generating apparatus includes a RF generator for providing a RF power, an antenna for generating an electromagnetic field upon receiving the RF power, a reaction chamber for exciting/ionizing a reaction gas via the electromagnetic field, and generating a plasma, and a plasma channel for absorbing the RF power, and allowing a current signal to be induced to the plasma.
摘要翻译：一种等离子体发生装置，其具有使用单个反应室的优异的等离子体产生效率。等离子体发生装置包括：RF发生器，用于提供RF功率;天线，用于在接收到RF功率时产生电磁场;反应室，用于经由电磁场激发/电离反应气体，产生等离子体;以及等离子体通道，用于吸收RF功率，并允许电流信号被感应到等离子体。

9. 发明申请

US20090015165A1 Plasma generating apparatus 有权
标题翻译：等离子体发生装置
公开(公告)号：US20090015165A1
公开(公告)日：2009-01-15
申请号：US12149450
申请日：2008-05-01
申请人： Sang Jean Jeon , Yuri Tolmachev , Su Ho Lee , Seoung Hyun Seok , Young Min Park , Won Hyuk Jang
发明人： Sang Jean Jeon , Yuri Tolmachev , Su Ho Lee , Seoung Hyun Seok , Young Min Park , Won Hyuk Jang
IPC分类号： H01J7/24
CPC分类号： H01J37/32165 , H01J37/321
摘要： A plasma generating apparatus having superior plasma generation efficiency that uses a single reaction chamber. The plasma generating apparatus includes a RF generator for providing a RF power, an antenna for generating an electromagnetic field upon receiving the RF power, a reaction chamber for exciting/ionizing a reaction gas via the electromagnetic field, and generating a plasma, and a plasma channel for absorbing the RF power, and allowing a current signal to be induced to the plasma.
摘要翻译：一种等离子体发生装置，其具有使用单个反应室的优异的等离子体产生效率。等离子体发生装置包括：RF发生器，用于提供RF功率;天线，用于在接收到RF功率时产生电磁场;反应室，用于经由电磁场激发/电离反应气体，产生等离子体;以及等离子体通道，用于吸收RF功率，并允许电流信号被感应到等离子体。

10. 发明申请

US20070068457A1 Plasma accelerator 有权
标题翻译：等离子加速器
公开(公告)号：US20070068457A1
公开(公告)日：2007-03-29
申请号：US11411966
申请日：2006-04-27
申请人： Won-taek Park , Vasily Pashkovski , Yuri Tolmachev
发明人： Won-taek Park , Vasily Pashkovski , Yuri Tolmachev
IPC分类号： C23C16/00
CPC分类号： F03H1/00 , H01L21/67063 , H05H1/54
摘要： A plasma accelerator is provided. The plasma accelerator includes a chamber having a closed top, an opened bottom and a lateral surface, a first coil section comprising a plurality of coils that are connected to one another in series and are wound around the lateral surface of the chamber in opposite directions, and a second coil section comprising a plurality of coils that are wound around the lateral surface of the chamber between coils of the first coil section in opposite directions. Accordingly, it is possible to make the mutual inductance between the coils small, to accurately adjust levels and phase differences of currents to be applied to the coils, and also to simplify the driving circuit.
摘要翻译：提供等离子体加速器。等离子体加速器包括具有闭合顶部，敞开的底部和侧面的腔室，第一线圈段，其包括彼此串联连接的多个线圈，并且沿相反方向缠绕在腔室的侧表面上，以及包括多个线圈的第二线圈段，所述多个线圈在相反方向上缠绕在所述第一线圈段的线圈之间的所述腔室的侧表面上。因此，可以使线圈之间的互感小，以精确地调整施加到线圈的电流的电平和相位差，并且还简化驱动电路。

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