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1. 发明授权

US07123407B2 Apparatus and method for realizing all-optical NOR logic device using gain saturation characteristics of a semiconductor optical amplifier 失效
标题翻译：使用半导体光放大器的增益饱和特性来实现全光NOR逻辑器件的装置和方法
公开(公告)号：US07123407B2
公开(公告)日：2006-10-17
申请号：US11039692
申请日：2005-01-20
申请人： Young Tae Byun , Jae Hun Kim , Young Min Jhon , Seok Lee , Deok Ha Woo , Sun Ho Kim , Jong Chang Yi
发明人： Young Tae Byun , Jae Hun Kim , Young Min Jhon , Seok Lee , Deok Ha Woo , Sun Ho Kim , Jong Chang Yi
IPC分类号： G02F3/00
CPC分类号： H01S5/50 , G02F1/3515 , G02F3/00 , G02F2203/70 , H01S5/509
摘要： The present invention relates to an apparatus and a method for realizing all-optical NOR logic device using the gain saturation characteristics of a semiconductor optical amplifier(SOA). More particularly, the invention relates to a 10 Gbit/s all-optical NOR logic device among all-optical logic devices, in which a signal transmitted from a given point of an optical circuit such as an optical computing circuit is used as a pump signal and a probe signal.The method for realizing an all-optical NOR logic device using the gain saturation characteristics of the SOA according to the present invention comprises the steps of: utilizing A+B signal which couples together an input signal pattern A (1100) and an input signal pattern B (0110) as a pump signal (1110); utilizing a probe signal (1111) by generating a clock signal out of said input signal pattern A (1100); and obtaining a Boolean equation {overscore (A+B)} by making said probe signal and said pump signal incident upon the SOA simultaneously from the opposite direction.The all-optical logic device according to the present invention has a simple construction since it is realized through the XGM (Cross Gain Modulation) method which utilizes the gain saturation characteristics. Also, it is expected that the method employed in the present invention could be used for realizing other all-optical logic circuits and devices.
摘要翻译：本发明涉及使用半导体光放大器（SOA）的增益饱和特性实现全光NOR逻辑器件的装置和方法。更具体地说，本发明涉及全光逻辑器件中的10Gbit / s全光NOR逻辑器件，其中从诸如光计算电路的光电路的给定点发送的信号用作泵信号和探测信号。使用根据本发明的SOA的增益饱和特性来实现全光NOR逻辑器件的方法包括以下步骤：利用将输入信号模式A（1100）和输入信号模式（1100）耦合在一起的A + B信号 B（0110）作为泵浦信号（1110）; 通过从所述输入信号模式A（1100）产生时钟信号来利用探测信号（1111）; 并通过使所述探针信号和所述泵浦信号从相反方向同时入射到SOA上而获得布尔方程（A + B）。根据本发明的全光逻辑器件具有简单的结构，因为它通过利用增益饱和特性的XGM（交叉增益调制）方法，并且预期本发明中采用的方法可用于实现其他全光逻辑电路和装置。

2. 发明授权

US06930826B2 All-optical XOR gate by using semiconductor optical amplifiers 失效
标题翻译：全光XOR门采用半导体光放大器
公开(公告)号：US06930826B2
公开(公告)日：2005-08-16
申请号：US10175610
申请日：2002-06-20
申请人： Jae Hun Kim , Young Tae Byun , Young Min Jhon , Seok Lee , Deok Ha Woo , Sun Ho Kim , Kwang Nam Kang
发明人： Jae Hun Kim , Young Tae Byun , Young Min Jhon , Seok Lee , Deok Ha Woo , Sun Ho Kim , Kwang Nam Kang
IPC分类号： G02F3/00 , H01S3/10 , H01S5/50 , H01S3/00
CPC分类号： G02F3/00
摘要： The present invention relates to a method of embodying all-optical XOR logic gate by using semiconductor optical amplifier, and more particularly, to a technique to embody all-optical XOR logic gate utilizing the cross-gain modulation (XGM) characteristic of semiconductor optical amplifiers controllable with input currents, illumination signal, and pumping signal.The method of all-optical XOR logic element in accordance with the present invention is characterized to obtain operational characteristic of the all-optical XOR logic element by inputting pump-signal and illumination signal concurrently into two semiconductor optical amplifiers and then summing the two output signals having XGM characteristic arising from gain saturation and wavelength conversion of the semiconductor optical amplifiers.
摘要翻译：本发明涉及通过使用半导体光放大器来实现全光XOR逻辑门的方法，更具体地说，涉及利用半导体光放大器的交叉增益调制（XGM）特性来体现全光XOR逻辑门的技术可用输入电流，照明信号和泵浦信号控制。根据本发明的全光XOR逻辑元件的方法的特征在于通过将泵浦信号和照明信号同时输入到两个半导体光放大器中，然后将两个输出信号相加，从而获得全光XOR逻辑元件的工作特性具有由半导体光放大器的增益饱和度和波长转换引起的XGM特性。

3. 发明授权

US06801349B2 Implementation method of an all-optical half adder by using SOA-based devices and an apparatus thereof 失效
标题翻译：通过使用基于SOA的设备的全光半加法器的实现方法及其装置
公开(公告)号：US06801349B2
公开(公告)日：2004-10-05
申请号：US10192208
申请日：2002-07-09
申请人： Jae Hun Kim , Young Tae Byun , Young Min Jhon , Seok Lee , Deok Ha Woo , Sun Ho Kim
发明人： Jae Hun Kim , Young Tae Byun , Young Min Jhon , Seok Lee , Deok Ha Woo , Sun Ho Kim
IPC分类号： G02F300
CPC分类号： H01S5/50 , G02F3/00 , H01S3/06754 , H01S5/509
摘要： The present invention relates to an implementation method of all-optical half adder by using semiconductor optical amplifier(SOA)-based devices and the apparatus thereof. In more detail, it relates to an implementation method of all-optical half adder comprising an all-optical XOR gate and an all-optical AND gate, implemented by using SOA-based devices, and an apparatus thereof.
摘要翻译：本发明涉及采用基于半导体光放大器（SOA）的器件及其装置的全光半加法器的实现方法。更具体地，本发明涉及一种全光半辅助器件的实现方法，其包括通过使用基于SOA的器件实现的全光XOR门和全光AND门，及其装置。

4. 发明授权

US08198614B2 Terahertz wave generator and method of generating high-power terahertz waves using the same 有权
标题翻译：太赫兹波发生器及使用其产生大功率太赫兹波的方法
公开(公告)号：US08198614B2
公开(公告)日：2012-06-12
申请号：US12641006
申请日：2009-12-17
申请人： Jae Hun Kim , Seok Lee , Deok Ha Woo , Sun Ho Kim , Young Tae Byun , Young Min Jhon
发明人： Jae Hun Kim , Seok Lee , Deok Ha Woo , Sun Ho Kim , Young Tae Byun , Young Min Jhon
IPC分类号： G21K5/02
CPC分类号： H01S1/06
摘要： The present invention relates to a terahertz wave generator and a method of generating high-power terahertz waves using the terahertz wave generator. The terahertz wave generator includes a hollow spherical body, and a focusing lens installed in a cutout portion of the spherical body or an opening formed in the cutout portion, wherein an inner surface of the spherical body is coated with metal. In the method, frequencies having different levels are incident through the focusing lens or the opening to generate a plurality of air plasmas, and the air plasmas cause continuous focusing the metal-coated inner surface and hollow space of the spherical body, thus generating high-power terahertz waves. According to the present invention, a plurality of air plasmas is continuously generated, thus solving the problem in which the light intensity of terahertz waves generated using one air plasma is low.
摘要翻译：本发明涉及太赫兹波发生器和使用太赫兹波发生器产生大功率太赫兹波的方法。太赫兹波发生器包括中空球体和安装在球体的切口部分中的聚焦透镜或形成在切口部分中的开口，其中球体的内表面涂有金属。在该方法中，具有不同等级的频率通过聚焦透镜或开口入射以产生多个空气等离子体，并且空气等离子体使得球形体的金属涂覆的内表面和中空空间连续聚焦，功率太赫兹波。根据本发明，连续地产生多个空气等离子体，从而解决了使用一个空气等离子体产生的太赫兹波的光强度低的问题。

5. 发明授权

US06804047B2 All-optical or gate embodied by using semiconductor optical amplifiers 失效
标题翻译：全光或门采用半导体光放大器实现
公开(公告)号：US06804047B2
公开(公告)日：2004-10-12
申请号：US10185062
申请日：2002-06-28
申请人： Young Tae Byun , Young Min Jhon , Jae Hun Kim , Seok Lee , Deok Ha Woo , Sun Ho Kim , Kwang Nam Kim
发明人： Young Tae Byun , Young Min Jhon , Jae Hun Kim , Seok Lee , Deok Ha Woo , Sun Ho Kim , Kwang Nam Kim
IPC分类号： G02F300
CPC分类号： H01S3/067 , G02F3/00 , G02F2002/006 , G02F2203/70 , H01S5/5054
摘要： The present invention is related to an all-optical OR device embodied by using the gain saturation and wavelength conversion characteristics of semiconductor optical amplifier (SOA), and more particularly, to a technique to embody an all-optical OR gate that performs all-optical logic operation by utilizing optical signals transmitted at arbitrary points of optical circuits such as optical computing circuits as the pump signal and the probe signal.
摘要翻译：本发明涉及通过使用半导体光放大器（SOA）的增益饱和度和波长转换特性来实现的全光学OR器件，更具体地，涉及一种实现全光学OR门的技术通过利用在诸如光计算电路的光电路的任意点处发送的光信号作为泵浦信号和探测信号来进行逻辑运算。

6. 发明申请

US20060092501A1 Embodying equipment and method for an all-optical or logic gate by using single SOA 有权
标题翻译：通过使用单个SOA实现全光或逻辑门的设备和方法
公开(公告)号：US20060092501A1
公开(公告)日：2006-05-04
申请号：US11170178
申请日：2005-06-29
申请人： Young Tae Byun , Young Min Jhon , Seok Lee , Deok Ha Woo , Sun Ho Kim
发明人： Young Tae Byun , Young Min Jhon , Seok Lee , Deok Ha Woo , Sun Ho Kim
IPC分类号： H01S3/00
CPC分类号： G02F3/00
摘要： Disclosed herein is an apparatus and method for implementing an all-optical OR logic gate. The apparatus includes an optical pulse generator, a Mode-Locked Fiber Laser (MLFL), a first optical splitter, a first optical delay line means, an optical control means, a first optical coupler, a second optical splitter, a second optical delay line means, a third optical splitter, an Erbium Doped Fiber Amplifier (EDFA), a Semiconductor Optical Amplifier (SOA), a second optical coupler, and an optical analyzer. The first optical splitter divides light output from the MLFL. The first and second optical delay line means acquire time delay. The optical control means controls intensity and polarization of the light. The first optical coupler generates the first input signal pattern as a probe signal. The second optical splitter divides light output from the first optical coupler. The third optical splitter divides the second input signal pattern. The EDFA amplifies the divided part of the second input signal pattern as a pump signal. The SOA couples the pump signal with the probe signal in opposite directions to perform the all-optical OR logic operation. The second optical coupler couples a signal output from the SOA with the second input signal pattern.
摘要翻译：这里公开了一种用于实现全光OR逻辑门的装置和方法。该装置包括光脉冲发生器，模锁定光纤激光器（MLFL），第一光分路器，第一光延迟线装置，光控制装置，第一光耦合器，第二光分路器，第二光延迟线意味着第三光分路器，掺铒光纤放大器（EDFA），半导体光放大器（SOA），第二光耦合器和光分析器。第一个光分路器分配MLFL的光输出。第一和第二光延迟线意味着获取时间延迟。光控制装置控制光的强度和极化。第一光耦合器产生第一输入信号模式作为探测信号。第二光分路器分割从第一光耦合器输出的光。第三光分路器分割第二输入信号模式。 EDFA将第二输入信号模式的分割部分放大为泵浦信号。 SOA将泵浦信号与探针信号相反的方向耦合，以执行全光OR逻辑运算。第二光耦合器将来自SOA的信号与第二输入信号模式相耦合。

7. 发明授权

US08741745B2 Method of controlling amount of adsorbed carbon nanotubes and method of fabricating carbon nanotube device 有权
标题翻译：碳纳米管吸附量控制方法及其制作方法
公开(公告)号：US08741745B2
公开(公告)日：2014-06-03
申请号：US13307438
申请日：2011-11-30
申请人： Young Min Jhon , Young Tae Byun , Chi Woong Jang , Kyeong Heon Kim , Seok Lee , Deok Ha Woo , Sun Ho Kim
发明人： Young Min Jhon , Young Tae Byun , Chi Woong Jang , Kyeong Heon Kim , Seok Lee , Deok Ha Woo , Sun Ho Kim
IPC分类号： H01L21/20 , B82Y40/00
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , H01L51/0003 , H01L51/0018 , H01L51/0048 , H01L51/0508 , H01L51/0512
摘要： Provided are a method of controlling an amount of adsorbed carbon nanotubes (CNTs) and a method of fabricating a CNT device. The method of controlling an amount of adsorbed CNTs includes adsorbing CNT particles onto a semiconductor structure, and removing some of the adsorbed CNTs by performing an oxygen plasma treatment on the adsorbed CNT particles.
摘要翻译：提供了一种控制吸附碳纳米管（CNT）的量的方法和制造CNT器件的方法。控制吸附CNT的量的方法包括将CNT颗粒吸附到半导体结构上，并通过对吸附的CNT颗粒进行氧等离子体处理来除去一些吸附的CNT。

8. 发明授权

US07248400B2 Embodying equipment and method for an all-optical or logic gate by using single SOA 有权
标题翻译：通过使用单个SOA实现全光或逻辑门的设备和方法
公开(公告)号：US07248400B2
公开(公告)日：2007-07-24
申请号：US11170178
申请日：2005-06-29
申请人： Young Tae Byun , Young Min Jhon , Seok Lee , Deok Ha Woo , Sun Ho Kim
发明人： Young Tae Byun , Young Min Jhon , Seok Lee , Deok Ha Woo , Sun Ho Kim
IPC分类号： G02F3/00
CPC分类号： G02F3/00
摘要： Disclosed herein is an apparatus and method for implementing an all-optical OR logic gate. The apparatus includes an optical pulse generator, a Mode-Locked Fiber Laser (MLFL), a first optical splitter, a first optical delay line means, an optical control means, a first optical coupler, a second optical splitter, a second optical delay line means, a third optical splitter, an Erbium Doped Fiber Amplifier (EDFA), a Semiconductor Optical Amplifier (SOA), a second optical coupler, and an optical analyzer. The first optical splitter divides light output from the MLFL. The first and second optical delay line means acquire time delay. The optical control means controls intensity and polarization of the light. The first optical coupler generates the first input signal pattern as a probe signal. The second optical splitter divides light output from the first optical coupler. The third optical splitter divides the second input signal pattern. The EDFA amplifies the divided part of the second input signal pattern as a pump signal. The SOA couples the pump signal with the probe signal in opposite directions to perform the all-optical OR logic operation. The second optical coupler couples a signal output from the SOA with the second input signal pattern.
摘要翻译：这里公开了一种用于实现全光OR逻辑门的装置和方法。该装置包括光脉冲发生器，模锁定光纤激光器（MLFL），第一光分路器，第一光延迟线装置，光控制装置，第一光耦合器，第二光分路器，第二光延迟线意味着第三光分路器，掺铒光纤放大器（EDFA），半导体光放大器（SOA），第二光耦合器和光分析器。第一个光分路器分配MLFL的光输出。第一和第二光延迟线意味着获取时间延迟。光控制装置控制光的强度和极化。第一光耦合器产生第一输入信号模式作为探测信号。第二光分路器分割从第一光耦合器输出的光。第三光分路器分割第二输入信号模式。 EDFA将第二输入信号模式的分割部分放大为泵浦信号。 SOA将泵浦信号与探针信号相反的方向耦合，以执行全光OR逻辑运算。第二光耦合器将来自SOA的信号与第二输入信号模式相耦合。

9. 发明授权

US06624929B2 All-optical logic AND operation in a SOA-based Mach-Zehnder interferometer 失效
标题翻译：基于SOA的Mach-Zehnder干涉仪中的全光逻辑与运算
公开(公告)号：US06624929B2
公开(公告)日：2003-09-23
申请号：US09942686
申请日：2001-08-31
申请人： Byung Kwon Kang , Jae Hun Kim , Seok Lee , Yoon Ho Park , Deok Ha Woo , Sun Ho Kim , Young Min Jhon
发明人： Byung Kwon Kang , Jae Hun Kim , Seok Lee , Yoon Ho Park , Deok Ha Woo , Sun Ho Kim , Young Min Jhon
IPC分类号： H01S300
CPC分类号： H01S5/5036 , G02F1/3517 , G02F2/004 , G02F3/00
摘要： The present invention relates to the all-optical logic AND operation in a SOA (semiconductor optical amplifier)-based Mach-Zehnder interferometer. More particularly, it relates to the technology making feasible ultra high-speed logic operations while maintaining a small size and a low input power by utilizing a cross-phase modulation (XPM) wavelength converter composed of semiconductor optical amplifiers in the form of a Mach-Zehnder interferometer with nonlinear characteristics.
摘要翻译：本发明涉及基于SOA（半导体光放大器）的马赫 - 曾德干涉仪中的全光逻辑与运算。更具体地说，涉及通过利用马赫数转换器形式的半导体光放大器组成的交叉相位调制（XPM）波长转换器，同时保持小尺寸和低输入功率，从而实现可行的超高速逻辑运算， Zehnder干涉仪具有非线性特性。

10. 发明授权

US07037739B2 Fabrication method of an epilayer structure InGaAsP/InP ridge waveguide phase modulator with high phase modulation efficiency 失效
标题翻译：具有高相位调制效率的外延层结构InGaAsP / InP脊波导相位调制器的制造方法
公开(公告)号：US07037739B2
公开(公告)日：2006-05-02
申请号：US10751858
申请日：2004-01-06
申请人： Young Tae Byun , Hwa Sun Park , Seok Lee , Deok Ha Woo , Jong Chang Yi
发明人： Young Tae Byun , Hwa Sun Park , Seok Lee , Deok Ha Woo , Jong Chang Yi
IPC分类号： H01L21/00
CPC分类号： G02F1/025 , G02F2001/0152 , G02F2001/0154 , G02F2202/102 , G02F2203/50
摘要： A fabrication method of an epilayer structure for InGaAsP/InP ridge waveguide phase modulator with high phase modulation efficiency. It relates to a P-p-n-N InGaAsP/InP ridge waveguide phase modulator fabricated to be that the phase change of the TE-mode is linearly proportional to the reverse bias voltage at 1.55 μm wavelength. A method for fabricating an epilayer structure for achieving the optical confinement in the vertical direction of an InGaAsP/InP waveguide phase modulator, characterized by comprising the steps of: forming a first cladding layer of N-InP on an N+-InP substrate; forming a first waveguide layer of n-InGaAsP and a second waveguide layer of p-InGaAsP in sequence on the first cladding layer; forming a second cladding layer of P-InP and a third cladding layer of P-InP in sequence on the second waveguide layer; and forming an electrode layer of p+InGaAs on the third cladding layer.
摘要翻译：具有高相位调制效率的InGaAsP / InP脊波导相位调制器的外延层结构的制造方法。它涉及一种P-p-n-N InGaAsP / InP脊波导相位调制器，其制造为TE模式的相变与1.55mum波长处的反偏压成线性比例。一种用于制造用于实现InGaAsP / InP波导相位调制器的垂直方向上的光限制的外延层结构的方法，其特征在于包括以下步骤：在N + 1上形成N-InP的第一包层， SUP> -InP底物; 在第一包层上依次形成n-InGaAsP的第一波导层和p-InGaAsP的第二波导层; 在第二波导层上依次形成P-InP的第二包层和P-InP的第三包层; 以及在所述第三覆层上形成p + + InGaAs的电极层。

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