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    • 3. 发明申请
    • Multibit phase change memory device and method of driving the same
    • 多位相变存储器件及其驱动方法
    • US20060091374A1
    • 2006-05-04
    • US11082054
    • 2005-03-15
    • Sung YoonSangouk RyuWoong ShinNam LeeByoung Yu
    • Sung YoonSangouk RyuWoong ShinNam LeeByoung Yu
    • H01L29/02
    • G11C11/5692G11C11/5678G11C13/0004G11C2213/71H01L27/2463H01L27/2481H01L45/06H01L45/1233H01L45/126H01L45/144
    • A multibit phase change memory device structured such that a plurality of individual phase change memory devices are aligned in a plan area or vertically, and a method of driving the same are provided. The multibit phase change memory device includes a phase change material layer having a plurality of contact portions being in contact with a heating electrode, and having a plurality of active regions, each active region forming a unit phase change memory device. The phase change material layer may be composed of one material layer in which the plurality of active regions are aligned in plural arrays. Alternatively, the phase change material layer may be composed of a plurality of phase change material layers in which one or plural active regions are respectively aligned in one array. The plurality of phase change material layers may be disposed in a same level of a plan area, or the plurality of phase change material layers may be respectively disposed on different plan areas in a same vertical line.
    • 一种多位相变存储器件,其被构造为使得多个单个相变存储器件在平面区域或垂直方向上对准,并且提供其驱动方法。 多位相变存储器件包括:相变材料层,具有与加热电极接触的多个接触部分,并且具有多个有源区域,每个有源区域形成单位相变存储器件。 相变材料层可以由多个有源区域以多个阵列排列的一个材料层构成。 或者,相变材料层可以由多个相变材料层构成,其中一个或多个有源区域分别对齐在一个阵列中。 多个相变材料层可以设置在平面区域的相同水平面上,或者多个相变材料层可以分别设置在相同垂直线上的不同平面区域上。