专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080160292A1 METHOD FOR PREPARING ZnO NANOCRYSTALS DIRECTLY ON SILICON SUBSTRATE 失效
标题翻译：直接在硅基材上制备ZnO纳米晶的方法
公开(公告)号：US20080160292A1
公开(公告)日：2008-07-03
申请号：US11966552
申请日：2007-12-28
申请人： Young Hwan Kim , Woon Jo Cho , Seong Il Kim , Chun Keun Kim , Yong Tae Kim
发明人： Young Hwan Kim , Woon Jo Cho , Seong Il Kim , Chun Keun Kim , Yong Tae Kim
IPC分类号： B32B5/16 , B05D3/02 , B05D3/04
CPC分类号： C30B29/60 , C30B29/16 , Y10S977/774 , Y10T428/259
摘要： A method for preparing a ZnO nanocrystal directly on a silicon substrate includes the steps of: (S1) forming a Zn—Si—O composite thin film on the silicon substrate; and (S2) thermally treating the obtained thin film. Particularly, ZnO nanocrystals are formed in an amorphous Zn—Si—O composite thin film by controlling the composition of the Zn—Si—O composite thin film and heating temperature thereof. With the present invention method for preparing a ZnO nanocrystal directly on a silicon substrate, more possibilities are opened up for the applications of ZnO nanocrystals to an optoelectronic device in use of a silicon substrate.
摘要翻译：直接在硅衬底上制备ZnO纳米晶体的方法包括以下步骤：（S1）在硅衬底上形成Zn-Si-O复合薄膜; 和（S 2）对所得薄膜进行热处理。特别地，通过控制Zn-Si-O复合薄膜的组成和其加热温度，在非晶Zn-Si-O复合薄膜中形成ZnO纳米晶体。利用本发明的用于在硅衬底上直接制备ZnO纳米晶体的方法，为了在使用硅衬底中将ZnO纳米晶体应用于光电子器件，开辟了更多的可能性。

2. 发明授权

US07732054B2 Method for preparing ZnO nanocrystals directly on silicon substrate 失效
标题翻译：在硅衬底上直接制备ZnO纳米晶体的方法
公开(公告)号：US07732054B2
公开(公告)日：2010-06-08
申请号：US11966552
申请日：2007-12-28
申请人： Young Hwan Kim , Woon Jo Cho , Seong Kim, II , Chun Keun Kim , Yong Tae Kim
发明人： Young Hwan Kim , Woon Jo Cho , Seong Kim, II , Chun Keun Kim , Yong Tae Kim
IPC分类号： B32B9/04 , B32B13/04 , B32B9/00 , H01L29/10
CPC分类号： C30B29/60 , C30B29/16 , Y10S977/774 , Y10T428/259
摘要： A method for preparing a ZnO nanocrystal directly on a silicon substrate includes the steps of: (S1) forming a Zn—Si—O composite thin film on the silicon substrate; and (S2) thermally treating the obtained thin film. Particularly, ZnO nanocrystals are formed in an amorphous Zn—Si—O composite thin film by controlling the composition of the Zn—Si—O composite thin film and heating temperature thereof. With the present invention method for preparing a ZnO nanocrystal directly on a silicon substrate, more possibilities are opened up for the applications of ZnO nanocrystals to an optoelectronic device in use of a silicon substrate.
摘要翻译：直接在硅衬底上制备ZnO纳米晶体的方法包括以下步骤：（S1）在硅衬底上形成Zn-Si-O复合薄膜; 和（S2）对所得薄膜进行热处理。特别地，通过控制Zn-Si-O复合薄膜的组成和其加热温度，在非晶Zn-Si-O复合薄膜中形成ZnO纳米晶体。利用本发明的用于在硅衬底上直接制备ZnO纳米晶体的方法，为了在使用硅衬底中将ZnO纳米晶体应用于光电子器件，开辟了更多的可能性。

3. 发明授权

US06392921B1 Driving circuit for non destructive non volatile ferroelectric random access memory 有权
标题翻译：非破坏性非挥发性铁电随机存取存储器的驱动电路
公开(公告)号：US06392921B1
公开(公告)日：2002-05-21
申请号：US09900184
申请日：2001-07-09
申请人： Yong Tae Kim , Chun Keun Kim , Seong Il Kim , Sun Il Shim
发明人： Yong Tae Kim , Chun Keun Kim , Seong Il Kim , Sun Il Shim
IPC分类号： G11C1100
CPC分类号： G11C11/22
摘要： The driving circuit for an NDRO-FRAM includes several NDRO-FRAM (Non Destructive Non Volatile Ferroelectric Random Access Memory) cells each having a drain, a bulk, a source and a gate and arranged as a matrix. A plurality of reading word lines are separately connected to each drain of the NDRO-FRAM cells arranged in columns, and a plurality of writing word lines are separately connected to each bulk of the NDRO-FRM cells arranged in columns. Several data level transmission circuits for transmitting a data level of the NDRO-FRAM cells are also included, which are connected to a plurality of data level transmission circuits. Accordingly, the present invention is capable of reading and writing of data on the NDRO-FRAM cells.
摘要翻译： NDRO-FRAM的驱动电路包括几个NDRO-FRAM（非破坏性非易失性铁电随机存取存储器）单元，每个单元具有漏极，体积，源极和栅极并且被布置为矩阵。多个读取字线分别连接到排列成列的NDRO-FRAM单元的每个漏极，并且多个写入字线分别连接到以列布置的NDRO-FRM单元的大部分。还包括用于发送NDRO-FRAM单元的数据电平的几个数据电平传输电路，其连接到多个数据电平传输电路。因此，本发明能够读取和写入NDRO-FRAM单元上的数据。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式