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1. 发明授权

US06786945B2 Polishing compound and method for polishing substrate 有权
公开(公告)号：US06786945B2
公开(公告)日：2004-09-07
申请号：US10467864
申请日：2003-08-13
申请人： Youichi Machii , Naoyuki Koyama , Masaya Nishiyama , Masato Yoshida
发明人： Youichi Machii , Naoyuki Koyama , Masaya Nishiyama , Masato Yoshida
IPC分类号： C09G102
CPC分类号： C09K3/1454 , C01F17/0043 , C01G25/00 , C01P2004/62 , C01P2004/64 , C01P2006/10 , C01P2006/12 , C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/31053
摘要： A polishing slurry and a polishing method which are suitably used in a CMP technique for flattening a surface of a substrate in a production process of a semiconductor device. The polishing slurry comprises particles and a medium in which at least a part of the particles are dispersed, wherein the particles are made of at least one of (1) a cerium compound selected from cerium oxide, cerium halide and cerium sulfide and having a density of 3 to 6 g/cm3 and an average particle diameter of secondary particles of 1 to 300 nm and (2) a tetravalent metal hydroxide. A polishing method using the polishing slurry takes advantage of a chemical action of particles in the polishing slurry and minimizes a mechanical action of the particles, thereby achieving a decrease in scratches caused by the particles and an increase in polishing rate at the same time.

2. 发明授权

US08075800B2 Polishing slurry and polishing method 有权
标题翻译：抛光浆和抛光方法
公开(公告)号：US08075800B2
公开(公告)日：2011-12-13
申请号：US10558406
申请日：2004-05-28
申请人： Naoyuki Koyama , Youichi Machii , Masato Yoshida , Masato Fukasawa , Toranosuke Ashizawa
发明人： Naoyuki Koyama , Youichi Machii , Masato Yoshida , Masato Fukasawa , Toranosuke Ashizawa
IPC分类号： C09K13/00 , H01L21/461 , H01L21/302
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1454
摘要： A polishing slurry containing a slurry dispersing particles of tetravalent metal hydroxide in a medium therein and an additive, characterized in that the additive is a polymer containing at least one kind of monomer component selected from a group of monomers represented with a general formulae (I) and (II) below (In the general formulae (I) and (II), R1 denotes hydrogen, a methyl group, a phenyl group, a benzil group, a chlorine group, a difluoromethyl group, a trifluoromethyl group or a cyano group, R2 and R3 denote hydrogen or an alkyl chain having 1 to 18 carbon atoms, a methylol group, an acetyl group or a diacetonyl group, and a case where both are hydrogen is not included. R4 denotes a morpholino group, a thiomorpholino group, a pyrrolidinyl group or a piperidino group.) The invention provides a polishing slurry in which particles form a chemical reaction layer with a polishing film to be removed with a very small mechanical action of the particles and mechanical removal by a pad without scratches and the additive realizes high planarity.
摘要翻译：一种抛光浆料，其含有在其中的介质中分散四价金属氢氧化物颗粒的浆料和添加剂，其特征在于，添加剂是含有选自由通式（I）表示的单体组中的至少一种单体组分的聚合物，和（II）（在通式（I）和（II）中，R 1表示氢，甲基，苯基，苯偶酰基，氯基，二氟甲基，三氟甲基或氰基， R2和R3表示氢或碳原子数1〜18的烷基链，羟甲基，乙酰基或二丙酰基，不包括氢的情况，R4表示吗啉代基，硫代吗啉基，吡咯烷基或哌啶子基）。本发明提供了一种抛光浆料，其中颗粒形成具有待除去的抛光膜的化学反应层，其具有非常小的颗粒的机械作用并通过pa机械去除 d没有划痕，添加剂实现了高平面性。

3. 发明申请

US20060289826A1 Hazardous substance decomposer and process for producing the same 有权
标题翻译：有害物质分解器及其生产方法
公开(公告)号：US20060289826A1
公开(公告)日：2006-12-28
申请号：US10558406
申请日：2004-05-28
申请人： Naoyuki Koyama , Youichi Machii , Masato Yoshida , Masato Fukasawa , Toranosuke Ashizawa
发明人： Naoyuki Koyama , Youichi Machii , Masato Yoshida , Masato Fukasawa , Toranosuke Ashizawa
IPC分类号： C09K13/00 , H01L21/461 , H01L21/302
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1454
摘要： A polishing slurry containing a slurry dispersing particles of tetravalent metal hydroxide in a medium therein and an additive, characterized in that the additive is a polymer containing at least one kind of monomer component selected from a group of monomers represented with a general formulae (I) and (II) below (In the general formulae (I) and (II), R1 denotes hydrogen, a methyl group, a phenyl group, a benzil group, a chlorine group, a difluoromethyl group, a trifluoromethyl group or a cyano group, R2 and R3 denote hydrogen or an alkyl chain having 1 to 18 carbon atoms, a methylol group, an acetyl group or a diacetonyl group, and a case where both are hydrogen is not included. R4 denotes a morpholino group, a thiomorpholino group, a pyrrolidinyl group or a piperidino group.) The invention provides a polishing slurry in which particles form a chemical reaction layer with a polishing film to be removed with a very small mechanical action of the particles and mechanical removal by a pad without scratches and the additive realizes high planarity.
摘要翻译：一种抛光浆料，其含有在其中的介质中分散四价金属氢氧化物颗粒的浆料和添加剂，其特征在于，添加剂是含有选自由通式（I）表示的单体组中的至少一种单体组分的聚合物，和（II）（在通式（I）和（II）中，R 1表示氢，甲基，苯基，苯偶酰基，氯基，二氟甲基，三氟甲基或氰基，R 2和R 3表示氢或具有1至18个碳原子的烷基链，羟甲基，乙酰基或二丙酰基并且不包括氢的情况，R 4表示吗啉代基，硫代吗啉代基，吡咯烷基或哌啶子基）。本发明提供了一种研磨浆料，其中颗粒形成具有用非常小的机械作用除去的抛光膜的化学反应层颗粒和通过垫没有划痕的机械去除和添加剂实现高平坦度。

4. 发明申请

US20090253355A1 CMP ABRASIVE, METHOD FOR POLISHING SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME, AND ADDITIVE FOR CMP ABRASIVE 有权
标题翻译： CMP磨料，抛光底材的方法和使用其制造半导体器件的方法和用于CMP磨料的添加剂
公开(公告)号：US20090253355A1
公开(公告)日：2009-10-08
申请号：US12484973
申请日：2009-06-15
申请人： Naoyuki Koyama , Kouji Haga , Masato Yoshida , Keizou Hirai , Toranosuke Ashizawa , Youiti Machii
发明人： Naoyuki Koyama , Kouji Haga , Masato Yoshida , Keizou Hirai , Toranosuke Ashizawa , Youiti Machii
IPC分类号： B24B1/00 , B24B7/22 , B24B57/02
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/30625
摘要： The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.
摘要翻译：本发明公开了一种CMP研磨剂，其包含氧化铈颗粒，分散剂，具有能够与待抛光的膜表面上存在的羟基形成氢键的原子或结构的有机聚合物和水，抛光衬底，其包括通过移动其上形成有待抛光的膜的衬底抛光待抛光的膜和抛光台板，同时将衬底压靠在抛光台板和抛光布上并将CMP磨料供应在待抛光的膜之间抛光布，半导体器件的制造方法，包括上述抛光方法的步骤和用于CMP研磨剂的添加剂，其包含具有能够与羟基形成氢键的原子或结构的有机聚合物存在于要抛光的膜的表面上，以及水。

5. 发明申请

US20060148667A1 Cmp polishing compound and polishing method 有权
标题翻译： CMP抛光复合和抛光方法
公开(公告)号：US20060148667A1
公开(公告)日：2006-07-06
申请号：US10544073
申请日：2004-01-30
申请人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
发明人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
IPC分类号： C11D7/50
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
摘要翻译：本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有任意一种N-单取代产物的骨架的化合物和选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物的任何一种的N，N-二取代的产物。对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。因此，可以提供可以有效地快速地研磨由氧化硅等制成的膜的抛光浆料和抛光方法，并且在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制其工艺薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。

6. 发明授权

US07838482B2 CMP polishing compound and polishing method 有权
标题翻译： CMP抛光剂和抛光方法
公开(公告)号：US07838482B2
公开(公告)日：2010-11-23
申请号：US10544073
申请日：2004-01-30
申请人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
发明人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
IPC分类号： C11D7/02 , C11D7/26 , C11D7/32
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
摘要翻译：本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有任意一种N-单取代产物的骨架的化合物和选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物的任意一种的N，N-二取代的产物。对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。因此，可以提供可以有效地快速地研磨由氧化硅等制成的膜的抛光浆料和抛光方法，并且在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制其工艺薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。

7. 发明授权

US08168541B2 CMP polishing slurry and polishing method 有权
标题翻译： CMP抛光浆料和抛光方法
公开(公告)号：US08168541B2
公开(公告)日：2012-05-01
申请号：US12902337
申请日：2010-10-12
申请人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
发明人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
IPC分类号： C09K13/00 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefore easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
摘要翻译：本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有任意一种N-单取代产物的骨架的化合物和选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物的任意一种的N，N-二取代的产物。对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。因此，可以提供一种研磨浆料和抛光方法，其可以有效和快速地对由氧化硅等制成的膜进行抛光，因此在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制该工艺薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。

8. 发明授权

US08002860B2 CMP abrasive, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive 有权
标题翻译： CMP研磨剂，用于研磨基材的方法和使用该方法制造半导体器件的方法以及用于CMP磨料的添加剂
公开(公告)号：US08002860B2
公开(公告)日：2011-08-23
申请号：US12484973
申请日：2009-06-15
申请人： Naoyuki Koyama , Kouji Haga , Masato Yoshida , Keizou Hirai , Toranosuke Ashizawa , Youiti Machii
发明人： Naoyuki Koyama , Kouji Haga , Masato Yoshida , Keizou Hirai , Toranosuke Ashizawa , Youiti Machii
IPC分类号： B24D3/02 , C09C1/68 , C09K3/14 , B24B1/00 , B24B7/19 , B24B7/30
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/30625
摘要： The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.
摘要翻译：本发明公开了一种CMP研磨剂，其包含氧化铈颗粒，分散剂，具有能够与待抛光的膜表面上存在的羟基形成氢键的原子或结构的有机聚合物和水，抛光衬底，其包括通过移动其上形成有待抛光的膜的衬底抛光待抛光的膜和抛光台板，同时将衬底压靠在抛光台板和抛光布上并将CMP磨料供应在待抛光的膜之间抛光布，半导体器件的制造方法，包括上述抛光方法的步骤和用于CMP研磨剂的添加剂，其包含具有能够与羟基形成氢键的原子或结构的有机聚合物存在于要抛光的膜的表面上，以及水。

9. 发明授权

US07837800B2 CMP polishing slurry and polishing method 有权
标题翻译： CMP抛光浆料和抛光方法
公开(公告)号：US07837800B2
公开(公告)日：2010-11-23
申请号：US12149216
申请日：2008-04-29
申请人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
发明人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
IPC分类号： B08B3/08 , C11D7/02 , C11D7/26 , C11D7/32
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
摘要翻译：本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有任意一种N-单取代产物的骨架的化合物和选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物的任意一种的N，N-二取代的产物。对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。因此，可以提供可以有效地快速地研磨由氧化硅等制成的膜的抛光浆料和抛光方法，并且在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制其工艺薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。

10. 发明申请

US20080214093A1 CMP polishing slurry and polishing method 有权
标题翻译： CMP抛光浆料和抛光方法
公开(公告)号：US20080214093A1
公开(公告)日：2008-09-04
申请号：US12149216
申请日：2008-04-29
申请人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
发明人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
IPC分类号： B24B1/00 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
摘要翻译：本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有任意一种N-单取代产物的骨架的化合物和选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物的任何一种的N，N-二取代的产物。对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。因此，可以提供可以有效地快速地研磨由氧化硅等制成的膜的抛光浆料和抛光方法，并且在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制其工艺薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。

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