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    • 1. 发明申请
    • VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD
    • 真空加工设备和真空加工方法
    • US20120156887A1
    • 2012-06-21
    • US13392010
    • 2010-08-24
    • Youhei OnoMasaaki KawanaYutaka Miura
    • Youhei OnoMasaaki KawanaYutaka Miura
    • H01L21/306H01L21/3065
    • H01J37/32422H01J37/32357H01J37/3244H01J37/32449H01L21/02046H01L21/02063H01L21/76814
    • A vacuum processing apparatus, comprising: a processing chamber 3 in which an object to be processed is placed and a predetermined vacuum state is formed; a first processing gas introducing means 12 for converting a first processing gas into a radical state and introducing the resulting first processing gas in the radical state into the processing chamber through first processing gas introducing ports which open to the interior of the processing chamber; a second processing gas introducing means 15 for introducing a second processing gas, which is reactive with the first processing gas in the radical state, into the processing chamber through second processing gas introducing ports which open to the interior of the processing chamber; a temperature controlling means for controlling the temperature within the processing chamber 3 to a first temperature-controlled state, in which the first processing gas in the radical state and the second processing gas process the surface of the object to be processed, thereby producing a reaction product, and to a second temperature-controlled state in which the resulting reaction product is sublimated and removed; and an inert gas introducing means for introducing an inert gas into the processing chamber 3 through the processing gas introducing ports 12 when the temperature controlling means controls the temperature within the processing chamber to the second temperature-controlled state.
    • 一种真空处理装置,包括:处理室3,其中放置有待加工物体并形成预定的真空状态; 第一处理气体引入装置12,用于将第一处理气体转化为自由基状态,并将所得到的自由基状态的第一处理气体通过向处理室的内部开放的第一处理气体导入口引入处理室; 第二处理气体引入装置15,用于将通过自由基状态的第一处理气体反应的第二处理气体通过向处理室内部开放的第二处理气体导入口引入处理室; 温度控制装置,用于将处理室3内的温度控制到第一温度控制状态,其中自由基状态的第一处理气体和第二处理气体处理待处理物体的表面,从而产生反应 产物和第二温度控制状态,其中所得反应产物升华和除去; 以及惰性气体引入装置,当温度控制装置将处理室内的温度控制到第二温度控制状态时,通过处理气体导入口12将惰性气体引入处理室3。