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    • 7. 发明授权
    • High temperature electrical connector
    • 高温电连接器
    • US06736668B1
    • 2004-05-18
    • US09663864
    • 2000-09-15
    • Arnold V. KholodenkoSenh ThachWing L. ChengAlvin LauDennis S. Grimard
    • Arnold V. KholodenkoSenh ThachWing L. ChengAlvin LauDennis S. Grimard
    • H01R1300
    • H01R13/533H01R2201/24
    • An electrical coupler comprises an inner connector having upper and lower ends, an insulative outer connector element circumscribing the inner connector, and a thermally conductive flange disposed over the upper end of the inner connector and the outer connector for conducting heat from the electrical conductor. The electrical conductor may be utilized in a substrate support for semiconductor wafer processing. The substrate support comprises a chuck body having an electrode embedded therein, and an upper male connector coupled to the electrode and protruding from said chuck body. A cooling plate having the electrical coupler is positioned proximate to the chuck body. The upper male connector is inserted in the electrical coupler, and a power source coupled to the lower portion of the electrical coupler chucks and biases a wafer to an upper surface of said chuck. The thermally conductive flange conducts and transfers heat generated from the upper male connector and electrical coupler to the cooling plate.
    • 电耦合器包括具有上端和下端的内连接器,限定内连接器的绝缘外连接器元件和设置在内连接器的上端上的导热凸缘和用于传导来自电导体的热的外连接器。 电导体可以用于半导体晶片处理的衬底支撑件中。 衬底支撑件包括具有嵌入其中的电极的卡盘体,以及耦合到电极并从所述卡盘体突出的上部阳连接器。 具有电耦合器的冷却板位于卡盘主体附近。 上部阳连接器插入电耦合器中,并且耦合到电耦合器的下部的电源卡住并将晶片偏置到所述卡盘的上表面。 导热凸缘传导和传递从上阳连接器和电耦合器产生的热量到冷却板。
    • 8. 发明授权
    • Process chamber having multiple gas distributors and method
    • 具有多个气体分配器和方法的处理室
    • US06676760B2
    • 2004-01-13
    • US09930938
    • 2001-08-16
    • Arnold V. KholodenkoDan KatzWing L. Cheng
    • Arnold V. KholodenkoDan KatzWing L. Cheng
    • C23C1600
    • C23C16/45519C23C16/455
    • A substrate processing chamber has a substrate support to support a substrate, and an exhaust conduit about the substrate support. A first process gas distributor directs a first process gas, such as a non-reactive gas, about the substrate perimeter and toward the exhaust conduit at a first flow rate to form a curtain of non-reactive gas about the substrate. A second process gas distributor directs a second process gas, such as reactive CVD or etchant gas, toward a central portion of the substrate at a second flow rate which is lower than the first flow rate. A gas energizer energizes the first and second process gases in the chamber. A controller operates the substrate support, gas flow meters, gas energizer, and throttle valve, to process the substrate in the energized gas.
    • 基板处理室具有用于支撑基板的基板支撑件和围绕基板支撑件的排气导管。 第一工艺气体分配器以第一流量引导诸如非反应性气体的第一工艺气体,例如基板周边和朝向排气管道,以在衬底周围形成非反应性气体帘幕。 第二工艺气体分配器以比第一流量低的第二流量向衬底的中心部分引导第二工艺气体,例如反应性CVD或蚀刻剂气体。 气体激发器激励腔室中的第一和第二处理气体。 控制器操作衬底支撑件,气体流量计,气体激励器和节流阀,以处理通电气体中的衬底。