会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明授权
    • Exposure mask, method of forming resist pattern and method of forming thin film pattern
    • 曝光掩模,形成抗蚀剂图案的方法和形成薄膜图案的方法
    • US07604910B2
    • 2009-10-20
    • US11705119
    • 2007-02-12
    • Akifumi KamijimaHiroki Matsukuma
    • Akifumi KamijimaHiroki Matsukuma
    • G03F9/00G03C5/00
    • G03F1/36G03F1/30
    • An exposure mask capable of improving resolution is provided. An exposure mask includes one slit-shaped main transmission region and three pairs of slit-shaped auxiliary transmission regions arranged in order in a direction perpendicular to the longitudinal direction of the main transmission region, each pair of auxiliary transmission regions facing each other with the main transmission region in between. Compared to the case where two or less pairs of auxiliary transmission regions are included, light intensity contrast becomes higher in an end portion in a slit width direction of the main transmission region by exposing and developing a resist film through the use of the exposure mask, so the exposed width of the resist film is narrowed.
    • 提供了能够提高分辨率的曝光掩模。 曝光掩模包括一个狭缝状的主透射区域和在与主透射区域的纵向方向垂直的方向上依次布置的三对狭缝状的辅助传输区域,每对辅助传输区域彼此面对主体 传输区域之间。 与包含两个或更少对的辅助透射区域的情况相比,通过使用曝光掩模曝光和显影抗蚀剂膜,在主透射区域的狭缝宽度方向的端部中的光强度对比度变高, 因此抗蚀膜的曝光宽度变窄。
    • 9. 发明申请
    • Exposure mask, method of forming resist pattern and method of forming thin film pattern
    • 曝光掩模,形成抗蚀剂图案的方法和形成薄膜图案的方法
    • US20070196745A1
    • 2007-08-23
    • US11705119
    • 2007-02-12
    • Akifumi KamijimaHiroki Matsukuma
    • Akifumi KamijimaHiroki Matsukuma
    • G03F1/00G03C5/00
    • G03F1/36G03F1/30
    • An exposure mask capable of improving resolution is provided. An exposure mask includes one slit-shaped main transmission region and three pairs of slit-shaped auxiliary transmission regions arranged in order in a direction perpendicular to the longitudinal direction of the main transmission region, each pair of auxiliary transmission regions facing each other with the main transmission region in between. Compared to the case where two or less pairs of auxiliary transmission regions are included, light intensity contrast becomes higher in an end portion in a slit width direction of the main transmission region by exposing and developing a resist film through the use of the exposure mask, so the exposed width of the resist film is narrowed.
    • 提供了能够提高分辨率的曝光掩模。 曝光掩模包括一个狭缝状的主透射区域和在与主透射区域的纵向方向垂直的方向上依次布置的三对狭缝状的辅助传输区域,每对辅助传输区域彼此面对主体 传输区域之间。 与包含两个或更少对的辅助透射区域的情况相比,通过使用曝光掩模曝光和显影抗蚀剂膜,在主透射区域的狭缝宽度方向的端部中的光强度对比度变高, 因此抗蚀膜的曝光宽度变窄。