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1. 发明授权

US08119241B2 Method for manufacturing diamond monocrystal having a thin film, and diamond monocrystal having a thin film 有权
标题翻译：具有薄膜的金刚石单晶的制造方法和具有薄膜的金刚石单晶
公开(公告)号：US08119241B2
公开(公告)日：2012-02-21
申请号：US12282137
申请日：2007-12-26
申请人： Akihiko Ueda , Kiichi Meguro , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
发明人： Akihiko Ueda , Kiichi Meguro , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： C30B29/04
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/24355 , Y10T428/30
摘要： A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 Ωcm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, includes the principal surface having an off-angle of 0.50° or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film is such that the thin-film surface has an off-angle of 0.50° or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 Ωcm or less at 300 K.
摘要翻译：一种在{111}单晶衬底的主表面上在300K下比电阻为300Ω·cm-cm或更小的低电阻磷掺杂外延薄膜的方法，其中磷原子/碳原子比为3％以上，主偏离角为0.50°以上的主表面。具有低电阻磷掺杂金刚石外延薄膜的金刚石单晶使得薄膜表面相对于{111}面具有0.50°或更大的偏角，并且低电阻磷掺杂金刚石外延薄膜的电阻率电阻磷掺杂金刚石外延薄膜在300K时为300＆OHgr; cm以下。

2. 发明授权

US07807126B2 Diamond single crystal substrate 有权
标题翻译：金刚石单晶基板
公开(公告)号：US07807126B2
公开(公告)日：2010-10-05
申请号：US12364609
申请日：2009-02-03
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14 , B01J3/06 , B01J3/08 , C01B31/06
CPC分类号： C30B25/02 , C30B25/18 , C30B29/04
摘要： A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.
摘要翻译：一种用于制造金刚石单晶衬底的方法，其中通过气相合成从用作种子衬底的金刚石单晶生长单晶，所述方法包括：制备金刚石单晶种子衬底，其具有主表面，其平面作为种子基材，相对于{100}面或{111}面，取向落入不大于8度的倾斜范围内; 通过机械加工形成在主面的外周方向相对于该种籽基板的一侧的主面倾斜的多个不同取向的面; 然后通过气相合成生长金刚石单晶。

3. 发明授权

US07655208B2 Single crystalline diamond and producing method thereof 有权
标题翻译：单晶金刚石及其制造方法
公开(公告)号：US07655208B2
公开(公告)日：2010-02-02
申请号：US11402062
申请日：2006-04-12
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： B01J3/06 , C01B31/00 , C30B29/04 , G11B5/65
CPC分类号： C30B29/04 , C30B25/20
摘要： The object of the present invention is to obtain a high quality single crystalline diamond that has less distortion and large area suitable for semiconductor device substrates or an optical component material. The present invention is a single crystalline diamond produced by chemical vapor deposition, wherein, when a linear polarized light which is composed of two linear polarized lights perpendicular to each other is introduced into one main face of the single crystalline diamond, a maximum value of a retardation between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 μm at maximum per a thickness of 100 μm across an entire of the single crystalline diamond, and also a method for producing the diamond.
摘要翻译：本发明的目的是获得具有较小变形和大面积的高半导体器件衬底或光学部件材料的高质量单晶金刚石。本发明是通过化学气相沉积法生产的单晶金刚石，其中当由彼此垂直的两个线性偏振光组成的线性偏振光被引入单晶金刚石的一个主面时，其最大值为在整个单晶金刚石上，相对于从相对的主面出来的彼此垂直的两个线偏振光之间的延迟最大值不超过每100μm厚度100mum的最大50μm，并且还有一种用于制造金刚石的方法。

4. 发明申请

US20060216220A1 Method for manufacturing diamond single crystal substrate, and diamond single crystal substrate 有权
标题翻译：金刚石单晶基板的制造方法和金刚石单晶基板
公开(公告)号：US20060216220A1
公开(公告)日：2006-09-28
申请号：US11388970
申请日：2006-03-27
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： B01J3/06 , C01B31/06 , C23C16/00
CPC分类号： C30B25/02 , C30B25/18 , C30B29/04
摘要： A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.
摘要翻译：一种用于制造金刚石单晶衬底的方法，其中通过气相合成从用作种子衬底的金刚石单晶生长单晶，所述方法包括：制备金刚石单晶种子衬底，其具有主表面，其平面作为种子基材，相对于{100}面或{111}面，取向落入不大于8度的倾斜范围内; 通过机械加工形成在主面的外周方向相对于该种籽基板的一侧的主面倾斜的多个不同取向的面; 然后通过气相合成生长金刚石单晶。

5. 发明申请

US20060213428A1 Diamond substrate and manufacturing method thereof 失效
标题翻译：金刚石基板及其制造方法
公开(公告)号：US20060213428A1
公开(公告)日：2006-09-28
申请号：US11390333
申请日：2006-03-28
申请人： Kiichi Meguro , Keisuke Tanizaki , Akihiko Namba , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Keisuke Tanizaki , Akihiko Namba , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C30B25/00
CPC分类号： C30B25/105 , C30B25/02 , C30B25/20 , C30B29/04 , H01L21/02381 , H01L21/0243 , H01L21/02527 , H01L21/0262 , H01L21/02645
摘要： The present invention provides a manufacturing method for a large-scale diamond substrate and a substrate produced by the method suitable for semiconductor lithography processing and large-scale optical parts, semiconductor materials, thermal-release substrate, semiconductor wafer processing, and back-feed devices, and others. The manufacturing method for a diamond substrate of the present invention comprises: the mounting step of preparing a substrate having a main face comprising a first region which is a concave and having a second region which surrounds the first region, and mounting, on the first region, a single crystalline diamond seed substrate having a plate thickness thicker than the concave depth of the first region; a connecting step of forming a CVD diamond layer from the single crystalline diamond seed substrate using a chemical vapor deposition, and mutually connecting by forming a CVD diamond layer on the second region at the same time; and a polishing step of polishing to substantially flatten both the CVD diamond layers on the single crystalline diamond seed substrate and on the second region by mechanically polishing.
摘要翻译：本发明提供了通过适用于半导体光刻处理的方法制造的大规模金刚石基板和基板的制造方法以及大型光学部件，半导体材料，热释放基板，半导体晶片处理和反馈装置，和别的。本发明的金刚石基板的制造方法包括：准备基板的安装步骤，所述基板具有主面，所述主面包括第一区域，所述第一区域是凹形的并且具有围绕所述第一区域的第二区域，并且安装在所述第一区域，具有厚于所述第一区域的凹入深度的板厚度的单晶金刚石种子基板; 使用化学气相沉积从所述单晶金刚石种子基板形成CVD金刚石层并且通过在所述第二区域上同时形成CVD金刚石层来相互连接的连接步骤; 以及抛光步骤，通过机械抛光在单晶金刚石种子基底上和第二区域上基本上平坦化CVD金刚石层。

6. 发明申请

US20050211159A1 Diamond single crystal substrate 有权
标题翻译：金刚石单晶基板
公开(公告)号：US20050211159A1
公开(公告)日：2005-09-29
申请号：US11055973
申请日：2005-02-14
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C30B25/18 , C30B29/04 , C30B7/00 , C30B21/02 , C30B23/00 , C30B25/00 , C30B28/06 , C30B28/12 , C30B28/14
CPC分类号： C30B25/18 , C30B29/04
摘要： A diamond single crystal substrate obtained by a vapor-phase growth method, wherein the diamond intrinsic Raman shift of the diamond single crystal substrate surface measured by microscopic Raman spectroscopy with a focused beam spot diameter of excitation light of 2 μm is deviated by +0.5 cm−1 or more to +3.0 cm−1 or less from the standard Raman shift quantity of strain-free diamond, in a region (region A) which is more than 0% to not more than 25% of the surface, and is deviated by −1.0 cm−1 or more to less than +0.5 cm−1 from the standard Raman shift quantity of strain-free diamond, in a region (region B) of the surface other than the region A. The diamond single crystal substrate can be obtained with a large size and high-quality without cracking and is suitable for semiconductor materials, electronic components, and optical components or the like.
摘要翻译：通过气相生长法获得的菱形单晶基板，其中通过微观拉曼光谱测量的金刚石单晶衬底表面的金刚石固有拉曼位移具有2μm激发光的聚焦光束直径偏离+0.5cm 在不大于0的区域（区域A）中，与无应变金刚石的标准拉曼位移量相比，超过-1.0以上至+ 3.0cm -1以下％至不大于25％的表面，并且与标准拉曼位移量偏离-1.0cm -1以上至小于+0.5cm -1以下的无应变金刚石，在区域A以外的表面的区域（区域B）中。金刚石单晶基板可以以大尺寸，高品质而不破裂地获得，并且适用于半导体材料，电子部件，和光学部件等。

7. 发明授权

US07955434B2 Diamond single crystal substrate 有权
标题翻译：金刚石单晶基板
公开(公告)号：US07955434B2
公开(公告)日：2011-06-07
申请号：US11055973
申请日：2005-02-14
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C30B29/04
CPC分类号： C30B25/18 , C30B29/04
摘要： A diamond single crystal substrate obtained by a vapor-phase growth method, wherein the diamond intrinsic Raman shift of the diamond single crystal substrate surface measured by microscopic Raman spectroscopy with a focused beam spot diameter of excitation light of 2 μm is deviated by +0.5 cm−1 or more to +3.0 cm−1 or less from the standard Raman shift quantity of strain-free diamond, in a region (region A) which is more than 0% to not more than 25% of the surface, and is deviated by −1.0 cm−1 or more to less than +0.5 cm−1 from the standard Raman shift quantity of strain-free diamond, in a region (region B) of the surface other than the region A. The diamond single crystal substrate can be obtained with a large size and high-quality without cracking and is suitable for semiconductor materials, electronic components, and optical components or the like.
摘要翻译：通过气相生长法获得的金刚石单晶基板，其中通过微观拉曼光谱测量的金刚石单晶基板表面的金刚石固有拉曼位移具有2μm的激发光的聚焦光束直径偏离+0.5cm 在不大于0％至不超过表面25％的区域（区域A）中，与无应变金刚石的标准拉曼位移量相比，为-1.0以上至+ 3.0cm -1以下，偏离在区域A以外的表面的区域（区域B）中，与无应变金刚石的标准拉曼位移量相比，为-1.0cm -1以上且小于+ 0.5cm -1。金刚石单晶基板可以可以获得具有大尺寸和高品质而不破裂，并且适用于半导体材料，电子部件和光学部件等。

8. 发明申请

US20090120366A1 MICROWAVE PLASMA CVD DEVICE 审中-公开
标题翻译：微波等离子体CVD装置
公开(公告)号：US20090120366A1
公开(公告)日：2009-05-14
申请号：US12294212
申请日：2007-01-29
申请人： Akihiko Ueda , Kiichi Meguro , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
发明人： Akihiko Ueda , Kiichi Meguro , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： C23C16/54
CPC分类号： C30B25/105 , C23C16/24 , C23C16/511 , C30B29/04 , H01J37/32192 , H01J37/32238
摘要： The present invention provides a microwave plasma CVD device that can satisfactorily perform plasma position control under a condition capable of fabricating a large-area high-quality diamond thin film or the like. A microwave plasma CVD device includes: a vacuum chamber 1 having, in the center of its upper portion, an open portion 2 for introducing microwaves 20; a base material support table 11 for supporting a base material inside the vacuum chamber; a waveguide for guiding the microwaves to the open portion; a dielectric window 22 for introducing the microwaves to the inside of the vacuum chamber; and an antenna portion 25 for introducing the microwaves to the vacuum chamber, the antenna portion being configured by a round rod portion 23 that is positioned in the center of the waveguide, the open portion and the dielectric window and an electrode portion 24 that holds the dielectric window between the electrode portion and the upper portion of the vacuum chamber for vacuum retention, wherein an end surface of the electrode portion 24 is formed wider than the dielectric window such that the dielectric window is hidden, and a concave portion of a predetermined size is formed in the surface of the electrode portion 24 that faces the center of the vacuum chamber.
摘要翻译：本发明提供一种能够在能够制造大面积高品质金刚石薄膜等的条件下令人满意地进行等离子体位置控制的微波等离子体CVD装置。微波等离子体CVD装置包括：真空室1，其上部中心具有用于引入微波20的开口部分2; 用于在真空室内支撑基材的基材支撑台11; 用于将微波引导到开口部分的波导; 用于将微波引导到真空室的内部的电介质窗22; 以及用于将微波引入真空室的天线部分25，天线部分由位于波导中心的圆棒部分23，开口部分和电介质窗口构成，电极部分24保持电极部分和真空室上部之间的电介质窗口用于真空保持，其中电极部分24的端面形成为比电介质窗口宽，使得电介质窗口被隐藏，并且具有预定尺寸的凹部形成在电极部分24的面对真空室的中心的表面上。

9. 发明申请

US20050155543A1 Diamond single crystal substrate manufacturing method and diamond single crystal substrate 有权
标题翻译：金刚石单晶衬底制造方法和金刚石单晶衬底
公开(公告)号：US20050155543A1
公开(公告)日：2005-07-21
申请号：US11032176
申请日：2005-01-11
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： H01L21/205 , C30B25/20 , C30B29/04 , C30B33/00 , C30B7/00 , B01J3/06 , B01J3/08 , C01B31/06 , C30B9/00 , C30B11/00 , C30B17/00 , C30B21/02 , C30B28/06
CPC分类号： C30B33/00 , C30B25/20 , C30B29/04 , Y10T428/30
摘要： A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 μm and less than 400 μm, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.
摘要翻译：一种用于通过气相合成从金刚石单晶种子基底生长单晶的菱形单晶衬底制造方法，包括在单晶生长之前通过反应离子蚀刻腐蚀至少0.5μm和小于400μm，在将已经机械抛光的种子基片的表面的厚度除去，从而从种子基片的表面除去由机械抛光引起的受影响层; 然后在其上生长单晶。该制造方法提供具有高质量，大尺寸和无意的杂质夹杂物的金刚石单晶衬底，并且适合用作半导体材料，电子部件，光学部件等。

10. 发明授权

US07524372B2 Method for manufacturing diamond single crystal substrate 有权
标题翻译：金刚石单晶基板的制造方法
公开(公告)号：US07524372B2
公开(公告)日：2009-04-28
申请号：US11388970
申请日：2006-03-27
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C30B29/04
CPC分类号： C30B25/02 , C30B25/18 , C30B29/04
摘要： A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.
摘要翻译：一种用于制造金刚石单晶衬底的方法，其中通过气相合成从用作种子衬底的金刚石单晶生长单晶，所述方法包括：制备金刚石单晶种子衬底，其具有主表面，其平面作为种子基材，相对于{100}面或{111}面，取向落入不大于8度的倾斜范围内; 通过机械加工形成在主面的外周方向相对于该种籽基板一侧的主面倾斜的多个不同取向的面; 然后通过气相合成生长金刚石单晶。

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