专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07695787B2 Silica glass crucible 有权
标题翻译：二氧化硅玻璃坩埚
公开(公告)号：US07695787B2
公开(公告)日：2010-04-13
申请号：US10801683
申请日：2004-03-17
申请人： Yoshiyuki Tsuji , Toshio Tsujimoto
发明人： Yoshiyuki Tsuji , Toshio Tsujimoto
IPC分类号： B44C1/22 , C04B35/00 , F16L9/10 , F27B14/10
CPC分类号： C03C19/00 , B24C1/08 , C03C15/00 , C30B15/10 , Y10T117/1032 , Y10T117/108 , Y10T428/13 , Y10T428/131
摘要： To provide a silica glass crucible, wherein there are no problems of generating a sinking and buckling when said crucible is used for pulling up silicon single crystal at a high temperature. The silica glass crucible used for pulling up the silicon single crystal, wherein at least an outer surface of a wall part of the crucible is covered with fine grooves having a length of less than 200 μm, a width of less than 30 μm and a depth of from more than 3 μm to less than 30 μm. Preferably, said fine groves are formed by carrying out a sand-blast treatment and a hydrofluoric acid etching and exist on more than 10% of the outer surface of the crucible, and a sliding frictional coefficient of the outer surface of the crucible to a carbon at 1500 degree C. is more than 0.6.
摘要翻译：为了提供一种二氧化硅玻璃坩埚，其中当在高温下使用所述坩埚拉起硅单晶时，不存在产生下沉和翘曲的问题。用于提升硅单晶的二氧化硅玻璃坩埚，其中至少坩埚的壁部的外表面被细长的小于200μm，宽度小于30μm的细槽和深度大于3μm至小于30μm。优选地，通过进行喷砂处理和氢氟酸蚀刻而形成所述细小花纹，并且存在于坩埚的外表面的10％以上，坩埚的外表面的滑动摩擦系数为碳在1500摄氏度，大于0.6。

2. 发明申请

US20070111151A1 SURFACE MODIFIED QUARTZ GLASS CRUCIBLE AND ITS MODIFICATION PROCESS 有权
标题翻译：表面改性石英玻璃可溶性及其改性方法
公开(公告)号：US20070111151A1
公开(公告)日：2007-05-17
申请号：US11621021
申请日：2007-01-08
申请人： Toshio Tsujimoto , Yoshiyuki Tsuji
发明人： Toshio Tsujimoto , Yoshiyuki Tsuji
IPC分类号： F27B14/10 , C30B29/18
CPC分类号： C30B15/10 , C03C17/25 , C03C17/27 , Y10S117/90 , Y10T117/10 , Y10T117/1032 , Y10T117/1052
摘要： A surface modified quartz glass crucible and a process for modifying the crucible includes a layer of a metal oxide on the whole or a part of the inside and/or outside of the crucible, and baking it. At least an inside surface of the crucible is coated with a said metal oxide of magnesium, calcium, strontium or barium. The coated layer of the crucible does not abrade easily and provides a high dislocation free ratio of silicon single crystals pulled by using the crucible.
摘要翻译：表面改性石英玻璃坩埚和坩埚的改性方法包括在坩埚的内部和/或外部的整个或一部分上的金属氧化物层，并进行烘烤。至少坩埚的内表面涂有镁，钙，锶或钡的所述金属氧化物。坩埚的涂层不容易磨损，并且通过使用坩埚提供高的无位错硅单晶。

3. 发明授权

US07776155B2 Surface modified quartz glass crucible and its modification process 有权
标题翻译：表面改性石英玻璃坩埚及其改性工艺
公开(公告)号：US07776155B2
公开(公告)日：2010-08-17
申请号：US11621021
申请日：2007-01-08
申请人： Toshio Tsujimoto , Yoshiyuki Tsuji
发明人： Toshio Tsujimoto , Yoshiyuki Tsuji
IPC分类号： C30B35/00
CPC分类号： C30B15/10 , C03C17/25 , C03C17/27 , Y10S117/90 , Y10T117/10 , Y10T117/1032 , Y10T117/1052
摘要： A surface modified quartz glass crucible and a process for modifying the crucible includes a layer of a metal oxide on the whole or a part of the inside and/or outside of the crucible, and baking it. At least an inside surface of the crucible is coated with a said metal oxide of magnesium, calcium, strontium or barium. The coated layer of the crucible does not abrade easily and provides a high dislocation free ratio of silicon single crystals pulled by using the crucible.
摘要翻译：表面改性石英玻璃坩埚和坩埚的改性方法包括在坩埚的内部和/或外部的整个或一部分上的金属氧化物层，并进行烘烤。至少坩埚的内表面涂有镁，钙，锶或钡的所述金属氧化物。坩埚的涂层不容易磨损，并且通过使用坩埚提供高的无位错硅单晶。

4. 发明授权

US07993454B2 Surface modified quartz glass crucible, and its modification process 有权
标题翻译：表面改性石英玻璃坩埚及其改性工艺
公开(公告)号：US07993454B2
公开(公告)日：2011-08-09
申请号：US12716605
申请日：2010-03-03
申请人： Toshio Tsujimoto , Yoshiyuki Tsuji
发明人： Toshio Tsujimoto , Yoshiyuki Tsuji
IPC分类号： C30B15/10
CPC分类号： C30B15/10 , C03C17/25 , C03C17/27 , Y10S117/90 , Y10T117/10 , Y10T117/1032 , Y10T117/1052
摘要： A surface modified quartz glass crucible and a process for modifying the crucible includes a layer of a metal oxide on the whole or a part of the inside and/or outside of the crucible, and baking it. At least an inside surface of the crucible is coated with a said metal oxide of magnesium, calcium, strontium or barium. The coated layer of the crucible does not abrade easily and provides a high dislocation free ratio of silicon single crystals pulled by using the crucible.
摘要翻译：表面改性石英玻璃坩埚和坩埚的改性方法包括在坩埚的内部和/或外部的整个或一部分上的金属氧化物层，并进行烘烤。至少坩埚的内表面涂有镁，钙，锶或钡的所述金属氧化物。坩埚的涂层不容易磨损，并且通过使用坩埚提供高的无位错硅单晶。

5. 发明授权

US06712901B2 Surface modification process of quartz glass crucible 有权
标题翻译：石英玻璃坩埚表面改性工艺
公开(公告)号：US06712901B2
公开(公告)日：2004-03-30
申请号：US10162637
申请日：2002-06-06
申请人： Toshio Tsujimoto , Yoshiyuki Tsuji
发明人： Toshio Tsujimoto , Yoshiyuki Tsuji
IPC分类号： C30B1520
CPC分类号： C30B15/10 , C30B35/002 , Y10T117/10
摘要： A process for modifying the surface of a quartz glass crucible and a modified quartz glass crucible produced by the process, where the crucible has a transparent coated layer containing a crystallization accelerator on the surface. The process includes coating a mixed solution containing a metal salt and a partial hydrolyzate of alkoxysilane oligomer on the surface of the crucible and heating to obtain a quartz glass crucible having a transparent coated layer. The crystallization promoter contains a metal oxide or a metal carbonate dispersed in a silica matrix.
摘要翻译：用于改变石英玻璃坩埚的表面的方法和通过该方法制备的改性石英玻璃坩埚，其中坩埚在表面上具有含有结晶促进剂的透明涂层。该方法包括在坩埚的表面上涂覆含有金属盐和烷氧基硅烷低聚物的部分水解产物的混合溶液，并加热，得到具有透明涂层的石英玻璃坩埚。结晶促进剂含有分散在二氧化硅基质中的金属氧化物或金属碳酸盐。

6. 发明授权

US07955511B2 Silica glass crucible 有权
标题翻译：二氧化硅玻璃坩埚
公开(公告)号：US07955511B2
公开(公告)日：2011-06-07
申请号：US12717390
申请日：2010-03-04
申请人： Yoshiyuki Tsuji , Toshio Tsujimoto
发明人： Yoshiyuki Tsuji , Toshio Tsujimoto
IPC分类号： B44C1/22 , C04B35/00 , F16L9/10 , F27B14/10
CPC分类号： C03C19/00 , B24C1/08 , C03C15/00 , C30B15/10 , Y10T117/1032 , Y10T117/108 , Y10T428/13 , Y10T428/131
摘要： A silica glass crucible used for pulling up silicon single crystal at a high temperature. The silica glass crucible may have at least an outer surface of a wall part of the crucible covered with fine grooves having a length of less than 200 μm, a width of less than 30 μm and a depth of from more than 3 μm to less than 30 μm. The fine groves may be formed by carrying out a sand-blast treatment and a hydrofluoric acid etching and may exist on more than 10% of the outer surface of the crucible, and a sliding frictional coefficient of the outer surface of the crucible to a carbon at 1500° C. is more than 0.6.
摘要翻译：用于在高温下拉高硅单晶的石英玻璃坩埚。二氧化硅玻璃坩埚可以至少具有坩埚的壁部的外表面，该细长的沟槽的长度小于200μm，宽度小于30μm，深度大于3μm至小于 30μm。可以通过进行喷砂处理和氢氟酸蚀刻来形成细小的花纹，并且可以存在于坩埚的外表面的10％以上，并且坩埚的外表面的滑动摩擦系数与碳在1500℃时大于0.6。

7. 发明申请

US20100154702A1 SURFACE MODIFIED QUARTZ GLASS CRUCIBLE, AND ITS MODIFICATION PROCESS 有权
标题翻译：表面改性的QUARTZ玻璃可溶性及其改性方法
公开(公告)号：US20100154702A1
公开(公告)日：2010-06-24
申请号：US12716605
申请日：2010-03-03
申请人： Toshio Tsujimoto , Yoshiyuki Tsuji
发明人： Toshio Tsujimoto , Yoshiyuki Tsuji
IPC分类号： C30B15/10 , B05D7/22 , B05D3/02
CPC分类号： C30B15/10 , C03C17/25 , C03C17/27 , Y10S117/90 , Y10T117/10 , Y10T117/1032 , Y10T117/1052
摘要： A surface modified quartz glass crucible and a process for modifying the crucible includes a layer of a metal oxide on the whole or a part of the inside and/or outside of the crucible, and baking it. At least an inside surface of the crucible is coated with a said metal oxide of magnesium, calcium, strontium or barium. The coated layer of the crucible does not abrade easily and provides a high dislocation free ratio of silicon single crystals pulled by using the crucible.
摘要翻译：表面改性石英玻璃坩埚和坩埚的改性方法包括在坩埚的内部和/或外部的整个或一部分上的金属氧化物层，并进行烘烤。至少坩埚的内表面涂有镁，钙，锶或钡的所述金属氧化物。坩埚的涂层不容易磨损，并且通过使用坩埚提供高的无位错硅单晶。

8. 发明授权

US09650168B2 Thread material cutting device 有权
公开(公告)号：US09650168B2
公开(公告)日：2017-05-16
申请号：US14352971
申请日：2011-10-31
申请人： Tomohiro Takemoto , Nobuhito Yamauchi , Takeo Yamamura , Mitsunori Saitoh , Yoshiyuki Tsuji
发明人： Tomohiro Takemoto , Nobuhito Yamauchi , Takeo Yamamura , Mitsunori Saitoh , Yoshiyuki Tsuji
IPC分类号： B65B29/04 , B65D85/812 , B32B37/02 , B32B38/04 , B65C7/00 , B65B9/20 , B32B38/00 , B29C65/08 , B65D85/808 , B29C65/02
CPC分类号： B65C7/00 , B29C65/02 , B29C65/08 , B32B37/02 , B32B38/004 , B32B38/1875 , B65B9/2056 , B65B29/04 , B65D85/808 , B65D85/812 , Y10T156/1077 , Y10T156/1097 , Y10T156/1326 , Y10T156/133 , Y10T156/1343 , Y10T156/1378
摘要： A thread material cutting device is provided which is used in an extraction bag sheet manufacturing apparatus. The thread material cutting device has tension application means such as a pressing plate configured to engage with the thread material placed between adjacent tags so as to apply tension to the thread material. While the welding means is press-heating the thread material onto the tags, the tension application means applies tension to the thread material so as to cut the thread material.

9. 发明授权

US08776481B2 Packing-packaging apparatus 有权
标题翻译：包装包装设备
公开(公告)号：US08776481B2
公开(公告)日：2014-07-15
申请号：US12920746
申请日：2009-01-15
申请人： Fumio Miyahara , Yoshiyuki Tsuji , Tomohiro Takemoto
发明人： Fumio Miyahara , Yoshiyuki Tsuji , Tomohiro Takemoto
IPC分类号： B65B1/06
CPC分类号： B65B29/02 , B65B9/20 , B65B9/2056 , B65B29/04 , B65B37/12 , B65B39/001
摘要： A packing-packaging machine includes: sheet feeding means; a horizontal bonding unit for forming a bag body by forming horizontal bonding on a tubular body at predetermined intervals; and an object dispensing unit for dispensing an object to be packaged to the bag body during a repetition of the formation of the horizontal bonding. The object dispensing unit includes a shutter for opening and closing a falling path of a predetermined amount of the object into the bag body. The shutter is opened and closed such that the predetermined amount of the object and another predetermined amount of the object fall with a spacing therebetween, and that before the horizontal bonding is formed on the bag body packed with the predetermined amount of the object which has been dropped during opening-closing operation of the shutter, the other predetermined amount of the object for a next bag body starts falling.
摘要翻译：包装机包括：送纸装置; 水平接合单元，用于通过在管状体上以预定间隔形成水平结合来形成袋体; 以及物体分配单元，用于在重复形成水平粘合期间将待包装物体分配到袋体。物体分配单元包括用于打开和关闭预定量的物体到袋体中的下落路径的挡板。快门被打开和关闭，使得预定量的物体和另一个预定量的物体以其间隔开而下降，并且在水平接合之前形成在装有预定量的物体的袋体上在快门的打开 - 关闭操作期间下降，另一个预定量的下一个袋体的物体开始下降。

10. 发明申请

US20110165028A1 METHOD FOR PURIFICATION OF SILICA PARTICLES, PURIFIER, AND PURIFIED SILICA PARTICLES 失效
标题翻译：纯化二氧化硅颗粒，净化剂和纯化二氧化硅颗粒的方法
公开(公告)号：US20110165028A1
公开(公告)日：2011-07-07
申请号：US13047433
申请日：2011-03-14
申请人： Minoru KANDA , Yoshiyuki Tsuji
发明人： Minoru KANDA , Yoshiyuki Tsuji
IPC分类号： B01J8/18 , B01J19/08
CPC分类号： C01B33/18 , B01J8/1836 , B01J8/42 , B01J2208/00407 , B01J2208/00415 , B03C1/288 , B03C1/30 , B03C1/32 , B03C2201/16 , B03C2201/18 , C03C1/02
摘要： [Problems] To provide a treatment method having excellent purification effect, in which impurities having high ionicity in a silica powder can be removed in a short time, a apparatus thereof, and a purified silica powder.[Means for Solving the Problems] A purification method of a silica powder comprises: making a silica powder into a fluid state; contacting a purified gas to the silica powder in the fluid state at high temperature; and thereby removing impurity components of the silica powder. In the method, the silica powder in the fluid state is positioned in a magnetic field region. Further, the silica powder is contacted with the purified gas, while applying voltage to the silica powder by an electric field generated by moving of the silica powder. Preferably, the silica powder in a fluid state is positioned in the magnetic region of 10 gausses or more, and contacted with the purification gas at a temperature of 1000° C. or more.
摘要翻译： [问题]提供一种具有优异的净化效果的处理方法，其中可以在短时间内除去二氧化硅粉末中的高离子性的杂质，其装置和纯化的二氧化硅粉末。解决问题的方法二氧化硅粉末的净化方法包括：将二氧化硅粉末制成流体状态; 在高温下将纯化气体以流体状态与二氧化硅粉末接触; 从而除去二氧化硅粉末的杂质成分。在该方法中，处于流体状态的二氧化硅粉末位于磁场区域中。此外，二氧化硅粉末与纯化气体接触，同时通过二氧化硅粉末移动产生的电场向二氧化硅粉末施加电压。优选地，处于流体状态的二氧化硅粉末位于10高斯或更高的磁性区域中，并且在1000℃以上的温度下与净化气体接触。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式