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    • 8. 发明授权
    • Ceramic sintered body and a process for its production
    • 陶瓷烧结体及其制造方法
    • US6121173A
    • 2000-09-19
    • US64550
    • 1998-04-22
    • Yoshitake Terashi
    • Yoshitake Terashi
    • C04B35/16H05K1/03C04B35/00
    • C04B35/16H05K1/0306H05K3/4629
    • The ceramic sintered body of this invention contains at least 14.9% by weight of Si calculated as SiO.sub.2, 1 to 84.9% by weight of Zn calculated as ZnO, 0.1 to 15% by weight of B calculated as B.sub.2 O.sub.3 and 0.1 to 10% by weight of Li calculated as Li.sub.2 O, and especially, a quartz crystal phase and a willemite crystal phase are precipitated. This sintered body has low dielectric constant and low dielectric loss in a high frequency region, and the thermal expansion coefficient at room temperature to 400.degree. C. can be adjusted to 1.5 to 17 ppm/.degree. C. For this reason, this sintered body is extremely useful as an insulated substrate for use in a wiring board for transmitting high frequency signals.
    • 本发明的陶瓷烧结体含有以SiO计为至少14.9重量%的Si,以ZnO计为1〜84.9重量%的Zn,以B 2 O计为0.1〜15重量%,以B 2 O计为0.1〜10重量% 的Li计算,特别是析出了石英晶相和硅锌矿结晶相。 该烧结体在高频区域具有低介电常数和低介电损耗,室温至400℃的热膨胀系数可以调节至1.5〜17ppm /℃。因此,该烧结体为 作为用于发送高频信号的布线基板的绝缘基板非常有用。