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1. 发明授权

US07943288B2 Thin-film magnetic head structure, method of manufacturing the same, and thin-film magnetic head 失效
标题翻译：薄膜磁头结构及其制造方法以及薄膜磁头
公开(公告)号：US07943288B2
公开(公告)日：2011-05-17
申请号：US12232722
申请日：2008-09-23
申请人： Yoshitaka Sasaki , Hiroyuki Ito , Takehiro Kamigama , Tatsushi Shimizu , Hironori Araki , Shigeki Tanemura , Kazuo Ishizaki
发明人： Yoshitaka Sasaki , Hiroyuki Ito , Takehiro Kamigama , Tatsushi Shimizu , Hironori Araki , Shigeki Tanemura , Kazuo Ishizaki
IPC分类号： G11B5/31
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163 , Y10T29/49032
摘要： A method of manufacturing a thin-film magnetic head structure comprises the steps of preparing an insulating layer 10; forming a first resist layer 51 provided with a first slit pattern 51a corresponding to a very narrow groove part and a second slit pattern 51b corresponding to a temporary groove part integrally extending from the very narrow groove part along outer edges of a main depression onto the insulating layer 10; etching the insulating layer 10 while using the first resist layer 51 as a mask; eliminating the first resist layer 51; forming a second resist layer having an opening pattern corresponding to the main depression onto the insulating layer 10; and etching the insulating layer 10 while using the second resist layer as a mask.
摘要翻译：制造薄膜磁头结构的方法包括制备绝缘层10的步骤; 形成第一抗蚀剂层51，该第一抗蚀剂层51具有对应于非常窄的槽部分的第一狭缝图案51a和对应于从非常窄的槽部分沿着主凹陷的外边缘整体延伸到绝缘体上的临时槽部分的第二狭缝图案51b 第10层; 在使用第一抗蚀剂层51作为掩模的同时蚀刻绝缘层10; 消除第一抗蚀剂层51; 在所述绝缘层10上形成具有与所述主凹部对应的开口图案的第二抗蚀剂层; 并且在使用第二抗蚀剂层作为掩模的同时蚀刻绝缘层10。

2. 发明申请

US20090040655A1 Thin-film magnetic head structure, method of manufacturing the same, and thin-film magnetic head 有权
公开(公告)号：US20090040655A1
公开(公告)日：2009-02-12
申请号：US12232723
申请日：2008-09-23
申请人： Yoshitaka Sasaki , Hiroyuki Ito , Takehiro Kamigama , Tatsushi Shimizu , Hironori Araki , Shigeki Tanemura , Kazuo Ishizaki
发明人： Yoshitaka Sasaki , Hiroyuki Ito , Takehiro Kamigama , Tatsushi Shimizu , Hironori Araki , Shigeki Tanemura , Kazuo Ishizaki
IPC分类号： G11B5/187
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163 , Y10T29/49032
摘要： A method of manufacturing a thin-film magnetic head structure comprises the steps of preparing an insulating layer 10; forming a first resist layer 51 provided with a first slit pattern 51a corresponding to a very narrow groove part and a second slit pattern 51b corresponding to a temporary groove part integrally extending from the very narrow groove part along outer edges of a main depression onto the insulating layer 10; etching the insulating layer 10 while using the first resist layer 51 as a mask; eliminating the first resist layer 51; forming a second resist layer having an opening pattern corresponding to the main depression onto the insulating layer 10; and etching the insulating layer 10 while using the second resist layer as a mask.

3. 发明授权

US07151647B2 Thin film magnetic head and manufacturing method for creating high surface recording density and including a second yoke portion having two layers of which one is etched to form a narrow portion and a sloped flare portion 有权
标题翻译：薄膜磁头和用于产生高表面记录密度的制造方法，并且包括具有两层蚀刻以形成窄部分的第二磁轭部分和倾斜的光晕部分
公开(公告)号：US07151647B2
公开(公告)日：2006-12-19
申请号：US10682732
申请日：2003-10-10
申请人： Yoshitaka Sasaki , Takehiro Kamigama , Hiroyuki Itoh , Kazuo Ishizaki , Shigeki Tanemura , Hironori Araki
发明人： Yoshitaka Sasaki , Takehiro Kamigama , Hiroyuki Itoh , Kazuo Ishizaki , Shigeki Tanemura , Hironori Araki
IPC分类号： G11B5/187
CPC分类号： G11B5/3903
摘要： The invention is directed to improvement of a write element of a thin film magnetic head. In the write element, a first coil and a second coil are provided on a first insulating film formed on one surface of a first magnetic film and surround in a spiral form a back gap portion. A second yoke portion in the upper position comprises a wide portion, a narrow portion and a sloping flare portion. The wide portion has a flat surface and is connected to the first magnetic film by a back gap portion at the rear of the medium-facing surface. The narrow portion forms the second pole portion and the surface of the narrow portion being at a lower position than the surface of the wide portion. The sloping flare portion extends from the narrow portion to the wide portion, gradually increasing in width and its surface sloping upward away from the surface of the narrow portion to the surface of the wide portion.
摘要翻译：本发明旨在改进薄膜磁头的写入元件。在写入元件中，第一线圈和第二线圈设置在形成在第一磁性膜的一个表面上的第一绝缘膜上，并以螺旋形状包围后部间隙部分。在上部位置的第二轭部包括宽部分，窄部分和倾斜的张开部分。宽部分具有平坦的表面，并且通过位于介质表面的后部的后间隙部分连接到第一磁性膜。窄部分形成第二极部分，并且窄部分的表面处于比宽部分的表面更低的位置。倾斜的喇叭口部分从窄部分延伸到宽部分，宽度逐渐增加，并且其表面向上倾斜远离窄部分的表面到宽部分的表面。

4. 发明申请

US20050210659A1 Method of manufacturing thin-film magnetic head 有权
标题翻译：制造薄膜磁头的方法
公开(公告)号：US20050210659A1
公开(公告)日：2005-09-29
申请号：US10807280
申请日：2004-03-24
申请人： Yoshitaka Sasaki , Takehiro Kamigama , Hironori Araki
发明人： Yoshitaka Sasaki , Takehiro Kamigama , Hironori Araki
IPC分类号： G11B5/127 , G11B5/187 , G11B5/31 , H04R31/00
CPC分类号： G11B5/1877 , G11B5/31 , Y10T29/49032 , Y10T29/49039 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： The method of manufacturing a thin-film magnetic head in accordance with the present invention comprises the steps of forming a first magnetic pole layer; removing both sides in a track width direction of the first magnetic pole layer so as to leave a predetermined residual area in the first magnetic pole layer; forming an insulating layer about the residual area of the first magnetic pole layer; forming a gap layer made of a nonmagnetic material; forming a second magnetic pole layer magnetically connected to the first magnetic pole; and patterning the second magnetic pole layer by etching while using a mask. As a consequence, even if an area relatively far from the second magnetic pole layer is eliminated from the gap layer, the insulating layer is mainly exposed from this area. This can prevent magnetic materials from adhering to the root of the second magnetic pole layer and its vicinity during etching.
摘要翻译：根据本发明的制造薄膜磁头的方法包括以下步骤：形成第一磁极层; 去除第一磁极层的轨道宽度方向上的两侧，以便在第一磁极层中留下预定的残留区域; 围绕第一磁极层的剩余区域形成绝缘层; 形成由非磁性材料制成的间隙层; 形成磁性地连接到所述第一磁极的第二磁极层; 并且在使用掩模时通过蚀刻对第二磁极层进行图案化。因此，即使从间隙层去除与第二磁极层相对较远的区域，绝缘层主要从该区域露出。这可以防止磁性材料在蚀刻期间粘附到第二磁极层及其附近的根部。

5. 发明授权

US07249408B2 Method of manufacturing a thin-film magnetic head 有权
标题翻译：制造薄膜磁头的方法
公开(公告)号：US07249408B2
公开(公告)日：2007-07-31
申请号：US10807280
申请日：2004-03-24
申请人： Yoshitaka Sasaki , Takehiro Kamigama , Hironori Araki
发明人： Yoshitaka Sasaki , Takehiro Kamigama , Hironori Araki
IPC分类号： G11B5/187 , B44C1/22
CPC分类号： G11B5/1877 , G11B5/31 , Y10T29/49032 , Y10T29/49039 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： The method of manufacturing a thin-film magnetic head in accordance with the present invention comprises the steps of forming a first magnetic pole layer; removing both sides in a track width direction of the first magnetic pole layer so as to leave a predetermined residual area in the first magnetic pole layer; forming an insulating layer about the residual area of the first magnetic pole layer; forming a gap layer made of a nonmagnetic material; forming a second magnetic pole layer magnetically connected to the first magnetic pole; and patterning the second magnetic pole layer by etching while using a mask.
摘要翻译：根据本发明的制造薄膜磁头的方法包括以下步骤：形成第一磁极层; 去除第一磁极层的轨道宽度方向上的两侧，以便在第一磁极层中留下预定的残留区域; 围绕第一磁极层的剩余区域形成绝缘层; 形成由非磁性材料制成的间隙层; 形成磁性地连接到所述第一磁极的第二磁极层; 并且在使用掩模时通过蚀刻对第二磁极层进行图案化。

6. 发明申请

US20070014048A1 Thin-film magnetic head structure, method of manufacturing the same, and thin-film magnetic head 有权
标题翻译：薄膜磁头结构及其制造方法以及薄膜磁头
公开(公告)号：US20070014048A1
公开(公告)日：2007-01-18
申请号：US11179728
申请日：2005-07-13
申请人： Yoshitaka Sasaki , Hiroyuki Ito , Takehiro Kamigama , Tatsushi Shimizu , Hironori Araki , Shigeki Tanemura , Kazuo Ishizaki
发明人： Yoshitaka Sasaki , Hiroyuki Ito , Takehiro Kamigama , Tatsushi Shimizu , Hironori Araki , Shigeki Tanemura , Kazuo Ishizaki
IPC分类号： G11B5/147
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163 , Y10T29/49032
摘要： A method of manufacturing a thin-film magnetic head structure comprises the steps of preparing an insulating layer 10; forming a first resist layer 51 provided with a first slit pattern 51a corresponding to a very narrow groove part and a second slit pattern 51b corresponding to a temporary groove part integrally extending from the very narrow groove part along outer edges of a main depression onto the insulating layer 10; etching the insulating layer 10 while using the first resist layer 51 as a mask; eliminating the first resist layer 51; forming a second resist layer having an opening pattern corresponding to the main depression onto the insulating layer 10; and etching the insulating layer 10 while using the second resist layer as a mask.
摘要翻译：制造薄膜磁头结构的方法包括制备绝缘层10的步骤; 形成第一抗蚀剂层51，其设置有对应于非常窄的槽部的第一狭缝图案51a和对应于沿着主凹部的外边缘从非常窄的槽部整体延伸的临时槽部的第二狭缝图案51b，绝缘层10; 在使用第一抗蚀剂层51作为掩模的同时蚀刻绝缘层10; 消除第一抗蚀剂层51; 在所述绝缘层10上形成具有与所述主凹部对应的开口图案的第二抗蚀剂层; 并且在使用第二抗蚀剂层作为掩模的同时蚀刻绝缘层10。

7. 发明授权

US06884730B2 Method of etching a film of magnetic material and method of manufacturing a thin-film magnetic head 有权
标题翻译：磁性材料薄膜的蚀刻方法及薄膜磁头的制造方法
公开(公告)号：US06884730B2
公开(公告)日：2005-04-26
申请号：US10186428
申请日：2002-07-02
申请人： Yoshitaka Sasaki , Hironori Araki , Takehiro Kamigama
发明人： Yoshitaka Sasaki , Hironori Araki , Takehiro Kamigama
IPC分类号： C23C28/00 , C23F4/00 , G11B5/31 , G11B5/39 , H01F41/34 , H01L21/302
CPC分类号： B82Y25/00 , B82Y10/00 , C23F4/00 , G11B5/3116 , G11B5/313 , G11B5/3146 , G11B5/3163 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , H01F41/34
摘要： In a thin-film magnetic head, a top pole layer for defining the recording track width includes a first layer that touches a recording gap layer, and a second layer located on the first layer. The top pole layer is formed in the following manner. First, a magnetic layer is formed on the recording gap layer. Next, the second layer is formed on the magnetic layer by plating. Using the second layer as a mask, the magnetic layer is selectively etched by reactive ion etching to form the first layer. The reactive ion etching uses an etching gas that contains a halogen type gas and a carbon oxide type gas.
摘要翻译：在薄膜磁头中，用于限定记录磁道宽度的顶极层包括接触记录间隙层的第一层和位于第一层上的第二层。顶极层以如下方式形成。首先，在记录间隙层上形成磁性层。接着，通过电镀在第二层上形成第二层。使用第二层作为掩模，通过反应离子蚀刻选择性地蚀刻磁性层以形成第一层。反应离子蚀刻使用包含卤素型气体和碳氧化物型气体的蚀刻气体。

8. 发明授权

US08169740B2 Thin-film magnetic head structure and thin-film magnetic head 有权
标题翻译：薄膜磁头结构和薄膜磁头
公开(公告)号：US08169740B2
公开(公告)日：2012-05-01
申请号：US12232723
申请日：2008-09-23
申请人： Yoshitaka Sasaki , Hiroyuki Ito , Takehiro Kamigama , Tatsushi Shimizu , Hironori Araki , Shigeki Tanemura , Kazuo Ishizaki
发明人： Yoshitaka Sasaki , Hiroyuki Ito , Takehiro Kamigama , Tatsushi Shimizu , Hironori Araki , Shigeki Tanemura , Kazuo Ishizaki
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163 , Y10T29/49032
摘要： A thin-film magnetic head including a main magnetic pole layer having a magnetic pole end part on a side of a medium-opposing surface opposing a recording medium; a write shield layer opposing the magnetic pole end part to form a recording gap layer on the medium-opposing surface side; a thin-film coil wound about the write shield layer or the main magnetic pole layer; and a base insulating layer formed with a magnetic pole forming depression, including a very narrow groove defining a form of the magnetic pole end part and a main depression integrally extending from an end part of the very narrow groove remote from the medium-opposing surface. A stepped part is formed at a boundary between a bottom face of the main depression and a bottom face of the very narrow groove. The main magnetic pole layer is the only magnetically functional layer in the depression.
摘要翻译：一种薄膜磁头，包括：主磁极层，在与记录介质相对的介质相对表面的一侧上具有磁极端部; 与所述磁极端部相对的写入屏蔽层，以在所述介质相对表面侧上形成记录间隙层; 围绕写入屏蔽层或主磁极层缠绕的薄膜线圈; 以及形成有磁极形成凹部的基底绝缘层，包括限定磁极端部的形式的非常窄的槽，以及从非常窄的槽的远离介质相对表面的端部整体延伸的主凹部。在主凹陷的底面和非常窄的凹槽的底面之间的边界处形成台阶部分。主磁极层是凹陷中唯一的磁性功能层。

9. 发明申请

US20090042143A1 Thin-film magnetic head structure, method of manufacturing the same, and thin-film magnetic head 失效
公开(公告)号：US20090042143A1
公开(公告)日：2009-02-12
申请号：US12232722
申请日：2008-09-23
申请人： Yoshitaka Sasaki , Hiroyuki Ito , Takehiro Kamigama , Tatsushi Shimizu , Hironori Araki , Shigeki Tanemura , Kazuo Ishizaki
发明人： Yoshitaka Sasaki , Hiroyuki Ito , Takehiro Kamigama , Tatsushi Shimizu , Hironori Araki , Shigeki Tanemura , Kazuo Ishizaki
IPC分类号： G03F7/20
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163 , Y10T29/49032
摘要： A method of manufacturing a thin-film magnetic head structure comprises the steps of preparing an insulating layer 10; forming a first resist layer 51 provided with a first slit pattern 51a corresponding to a very narrow groove part and a second slit pattern 51b corresponding to a temporary groove part integrally extending from the very narrow groove part along outer edges of a main depression onto the insulating layer 10; etching the insulating layer 10 while using the first resist layer 51 as a mask; eliminating the first resist layer 51; forming a second resist layer having an opening pattern corresponding to the main depression onto the insulating layer 10; and etching the insulating layer 10 while using the second resist layer as a mask.

10. 发明授权

US07492555B2 Thin-film magnetic head structure, method of manufacturing the same, and thin-film magnetic head 有权
标题翻译：薄膜磁头结构及其制造方法以及薄膜磁头
公开(公告)号：US07492555B2
公开(公告)日：2009-02-17
申请号：US11179728
申请日：2005-07-13
申请人： Yoshitaka Sasaki , Hiroyuki Ito , Takehiro Kamigama , Tatsushi Shimizu , Hironori Araki , Shigeki Tanemura , Kazuo Ishizaki
发明人： Yoshitaka Sasaki , Hiroyuki Ito , Takehiro Kamigama , Tatsushi Shimizu , Hironori Araki , Shigeki Tanemura , Kazuo Ishizaki
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163 , Y10T29/49032
摘要： A method of manufacturing a thin-film magnetic head structure comprises the steps of preparing an insulating layer 10; forming a first resist layer 51 provided with a first slit pattern 51a corresponding to a very narrow groove part and a second slit pattern 51b corresponding to a temporary groove part integrally extending from the very narrow groove part along outer edges of a main depression onto the insulating layer 10; etching the insulating layer 10 while using the first resist layer 51 as a mask; eliminating the first resist layer 51; forming a second resist layer having an opening pattern corresponding to the main depression onto the insulating layer 10; and etching the insulating layer 10 while using the second resist layer as a mask.
摘要翻译：制造薄膜磁头结构的方法包括制备绝缘层10的步骤; 形成第一抗蚀剂层51，该第一抗蚀剂层51具有对应于非常窄的槽部分的第一狭缝图案51a和对应于从非常窄的槽部分沿着主凹陷的外边缘整体延伸到绝缘体上的临时槽部分的第二狭缝图案51b 第10层; 在使用第一抗蚀剂层51作为掩模的同时蚀刻绝缘层10; 消除第一抗蚀剂层51; 在所述绝缘层10上形成具有与所述主凹部对应的开口图案的第二抗蚀剂层; 并且在使用第二抗蚀剂层作为掩模的同时蚀刻绝缘层10。

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