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1. 发明授权

US5346791A Electroconductive magnetic carrier, developer using the same and image formation method 失效
标题翻译：导电磁性载体，使用相同的显影剂和成像方法
公开(公告)号：US5346791A
公开(公告)日：1994-09-13
申请号：US982841
申请日：1992-11-30
申请人： Yoshio Ozawa , Yukio Ikeda , Katsuhiro Yoshioka
发明人： Yoshio Ozawa , Yukio Ikeda , Katsuhiro Yoshioka
IPC分类号： G03G9/10 , G03G9/107 , G03G9/113 , G03G9/083
CPC分类号： B82Y15/00 , G03G9/10 , G03G9/107 , G03G9/1075 , G03G9/1131 , G03G9/1139
摘要： An electroconductive magnetic carrier which is composed of carrier particles, each of the carrier particles comprising a basic particle in which magnetic particles with an average particle diameter of 0.05 to 1.0 .mu.m are dispersed in a binder resin, and electroconductive finely-divided particles with an average particle diameter of 0.5 .mu.m or less which are fixed on the surface of said basic particle to form a carrier particle with an average particle diameter of 5 to 100 .mu.m; a developer which is composed of the above electroconductive magnetic carrier and an electrically insulating toner; and an image formation method of forming toner images on a photoconductor by using this developer are described.
摘要翻译：一种由载体颗粒构成的导电磁性载体，每个载体颗粒包含平均粒径为0.05-1.0μm的磁性颗粒分散在粘合剂树脂中的碱性颗粒，以及导电细碎颗粒与平均粒径为0.5μm以下，固定在所述碱性粒子的表面，形成平均粒径为5〜100μm的载体颗粒; 由上述导电磁性载体和电绝缘调色剂组成的显影剂; 并描述了通过使用该显影剂在感光体上形成调色剂图像的图像形成方法。

2. 发明授权

US5318873A Electroconductive magnetic carrier, developer using the same and image formation method 失效
标题翻译：导电磁性载体，使用相同的显影剂和成像方法
公开(公告)号：US5318873A
公开(公告)日：1994-06-07
申请号：US13697
申请日：1993-02-04
申请人： Takao Kawamura , Yasuo Nishiguchi , Yoshio Ozawa , Yukio Ikeda , Katsuhiro Yoshioka , Hiroshi Itoh
发明人： Takao Kawamura , Yasuo Nishiguchi , Yoshio Ozawa , Yukio Ikeda , Katsuhiro Yoshioka , Hiroshi Itoh
IPC分类号： G03G9/107 , G03G9/113 , G03G13/09
CPC分类号： B82Y15/00 , G03G9/1075 , G03G9/1131 , G03G9/1139
摘要： An electroconductive magnetic carrier which is composed of basic particles, each of the basic particles comprising a binder resin and a magnetic material dispersed in the binder resin, and an electroconductive layer formed on the surface of the basic particle, a developer which is composed of the above electroconductive magnetic carrier and (b) an electrically insulating toner, and an image formation method of forming toner images on a photoconductor by using this developer are described.
摘要翻译：一种由碱性颗粒组成的导电磁性载体，每个基本颗粒包含粘合剂树脂和分散在粘合剂树脂中的磁性材料，以及形成在基础颗粒表面上的导电层，显影剂由以及（b）电绝缘调色剂，以及通过使用该显影剂在感光体上形成调色剂图像的图像形成方法。

3. 发明授权

US5256513A Electroconductive magnetic carrier, developer using the same and image formation method 失效
标题翻译：导电磁性载体，使用相同的显影剂和成像方法
公开(公告)号：US5256513A
公开(公告)日：1993-10-26
申请号：US815805
申请日：1991-12-30
申请人： Takao Kawamura , Yasuo Nishiguchi , Yoshio Ozawa , Yukio Ikeda , Katsuhiro Yoshioka , Hiroshi Itoh
发明人： Takao Kawamura , Yasuo Nishiguchi , Yoshio Ozawa , Yukio Ikeda , Katsuhiro Yoshioka , Hiroshi Itoh
IPC分类号： G03G9/107 , G03G9/113 , G03G9/083
CPC分类号： B82Y15/00 , G03G9/1075 , G03G9/1131 , G03G9/1139
摘要： An electroconductive magnetic carrier which is composed of basic particles, each of the basic particles comprising a binder resin and a magnetic material dispersed in the binder resin, and an electroconductive layer formed on the surface of the basic particle, a developer which is composed of the above electroconductive magnetic carrier and (b) an electrically insulating toner, and an image formation method of forming toner images on a photoconductor by using this developer are described.

4. 发明授权

US5797071A Electrophotographic apparatus 失效
标题翻译：电子照相设备
公开(公告)号：US5797071A
公开(公告)日：1998-08-18
申请号：US757737
申请日：1996-11-26
申请人： Yoshio Ozawa , Norio Tomiie , Hiroyoshi Tode , Yukio Ikeda
发明人： Yoshio Ozawa , Norio Tomiie , Hiroyoshi Tode , Yukio Ikeda
IPC分类号： G03G5/082 , G03G15/00 , G03G21/20
CPC分类号： G03G15/751 , G03G21/203 , G03G5/08235 , G03G5/08242
摘要： To form sharp image free from flow of image or fog with an electrophotographic apparatus, which uses an a-Si photo-sensitive drum charged uniformly by having resort to the discharge phenomenon, the electrophotographic apparatus comprises an electrophotographic photo-sensitive drum having a surface layer being represented by an elementary ratio composition formula ( a-Si.sub.1-x C.sub.x :H ), x being 0.95.ltoreq..times.
摘要翻译：为了通过使用通过借助于放电现象均匀地带电的a-Si感光鼓的电子照相设备形成没有图像或雾的清晰图像，电子照相设备包括具有表面层的电子照相感光鼓由基本比例组成式（a-Si1-xCx：H）表示，x为0.95

5. 发明授权

US08637915B2 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US08637915B2
公开(公告)日：2014-01-28
申请号：US13007258
申请日：2011-01-14
申请人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
发明人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
IPC分类号： H01L29/788
CPC分类号： H01L29/42336 , H01L21/28273 , H01L27/0207 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/7881
摘要： A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.
摘要翻译：非易失性半导体存储器包括具有浮动栅极和控制栅极的第一和第二存储单元。第一和第二存储单元的浮动栅极包括第一部分和布置在第一部分上的第二部分，并且第二部分在控制栅极的延伸方向上的宽度比第一部分的宽度窄。第一和第二存储单元的第一部分之间的第一空间填充有一种绝缘体。控制栅极被布置在第一和第二存储单元的第二部分之间的第二空间处。

6. 再颁专利

USRE44630E1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：USRE44630E1
公开(公告)日：2013-12-10
申请号：US13616208
申请日：2012-09-14
申请人： Tetsuya Kai , Ryuji Ohba , Yoshio Ozawa
发明人： Tetsuya Kai , Ryuji Ohba , Yoshio Ozawa
IPC分类号： H01L21/331
CPC分类号： H01L21/28273 , B82Y10/00 , H01L21/28282 , H01L27/11521 , H01L29/42332 , H01L29/7881
摘要： A semiconductor device includes a semiconductor substrate, and a nonvolatile memory cell provided on the semiconductor substrate, the nonvolatile memory cell including a tunnel insulating film provided on a surface of the semiconductor substrate, the tunnel insulating film including semiconductor grains, the semiconductor grains included in both end portions of the tunnel insulating film having smaller grain size than the semiconductor grains included in other portions of the tunnel insulating film, a charge storage layer provided on the tunnel insulating film, an insulating film provided on the charge storage layer, and a control gate electrode provided on the insulating film.
摘要翻译：半导体器件包括半导体衬底和设置在半导体衬底上的非易失性存储单元，所述非易失性存储单元包括设置在所述半导体衬底的表面上的隧道绝缘膜，所述隧道绝缘膜包括半导体晶粒，所述半导体晶粒包括在隧道绝缘膜的两端部比隧道绝缘膜的其他部分所包含的半导体晶粒小的晶粒尺寸，隧道绝缘膜上设置的电荷存储层，设置在电荷存储层上的绝缘膜，以及控制栅电极设置在绝缘膜上。

7. 发明授权

US08604536B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08604536B2
公开(公告)日：2013-12-10
申请号：US12406841
申请日：2009-03-18
申请人： Katsuyuki Sekine , Yoshio Ozawa
发明人： Katsuyuki Sekine , Yoshio Ozawa
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/513 , H01L29/66833
摘要： A semiconductor device includes a memory cell transistor including a first lower insulating film provided on a semiconductor substrate, a first intermediate insulating film provided on the first lower insulating film, a first upper insulating film provided on the first intermediate insulating film, and a first gate electrode provided on the first upper insulating film, and a select transistor including a second lower insulating film provided on the semiconductor substrate, a second intermediate insulating film provided on the second lower insulating film, a second upper insulating film provided on the second intermediate insulating film, and a second gate electrode provided on the second upper insulating film, wherein trap density of the second intermediate insulating film is lower than that of the first intermediate insulating film.
摘要翻译：半导体器件包括存储单元晶体管，其包括设置在半导体衬底上的第一下绝缘膜，设置在第一下绝缘膜上的第一中间绝缘膜，设置在第一中间绝缘膜上的第一上绝缘膜和第一栅极设置在第一上绝缘膜上的电极和设置在半导体衬底上的第二下绝缘膜的选择晶体管，设置在第二下绝缘膜上的第二中间绝缘膜，设置在第二中间绝缘膜上的第二上绝缘膜以及设置在第二上绝缘膜上的第二栅电极，其中第二中间绝缘膜的阱密度低于第一中间绝缘膜的陷阱密度。

8. 发明授权

US08324679B2 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US08324679B2
公开(公告)日：2012-12-04
申请号：US13430153
申请日：2012-03-26
申请人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
发明人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
IPC分类号： H01L29/788
CPC分类号： H01L29/42336 , H01L21/28273 , H01L27/0207 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/7881
摘要： A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.
摘要翻译：非易失性半导体存储器包括具有浮动栅极和控制栅极的第一和第二存储单元。第一和第二存储单元的浮动栅极包括第一部分和布置在第一部分上的第二部分，并且第二部分在控制栅极的延伸方向上的宽度比第一部分的宽度窄。第一和第二存储单元的第一部分之间的第一空间填充有一种绝缘体。控制栅极被布置在第一和第二存储单元的第二部分之间的第二空间处。

9. 发明申请

US20120282773A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120282773A1
公开(公告)日：2012-11-08
申请号：US13487280
申请日：2012-06-04
申请人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
发明人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
IPC分类号： H01L21/302
CPC分类号： H01L29/7881 , H01L21/76208 , H01L27/11521 , H01L29/66825
摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming a conductive film whose upper surface and side surface are exposed and an insulation film whose upper surface is exposed, on a semiconductor substrate. The method further includes supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the exposed side surface of the conductive film and the exposed upper surface of the insulation film, by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the exposed side surface of the conductive film and the exposed upper surface of the insulation film.
摘要翻译：在一个实施例中，制造半导体器件的方法包括在半导体衬底上形成其上表面和侧表面被暴露的导电膜和上表面暴露的绝缘膜。该方法还包括通过施加微波，射频波或电子回旋共振等将由等离子体产生的等离子体中包含的氧化离子或氮化离子供应到导电膜的暴露侧表面和绝缘膜的暴露的上表面对半导体衬底施加预定的电压，从而进行导电膜的暴露的侧表面和绝缘膜的暴露的上表面的各向异性氧化或各向异性氮化。

10. 发明授权

US08304352B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08304352B2
公开(公告)日：2012-11-06
申请号：US13051031
申请日：2011-03-18
申请人： Masayuki Tanaka , Kazuhiro Matsuo , Yoshio Ozawa
发明人： Masayuki Tanaka , Kazuhiro Matsuo , Yoshio Ozawa
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/28282 , H01L27/11568 , H01L27/11582
摘要： According to an embodiment, there is provided a method of manufacturing a semiconductor device, including forming a nitride film by nitriding a surface of an underlying region having a semiconductor region containing silicon as a main component and an insulating region containing silicon and oxygen as a main component and adjacent to the semiconductor region, carrying out oxidation with respect to the nitride film to convert a portion of the nitride film which is formed on the insulating region into an oxide film and to leave a portion of the nitride film which is formed on the semiconductor region as at least part of a charge storage insulating film, forming a block insulating film on the charge storage insulating film, and forming a gate electrode film on the block insulating film.
摘要翻译：根据一个实施例，提供一种制造半导体器件的方法，包括通过氮化作为主要成分的含有硅的半导体区域的下面的区域的表面和以硅和氧为主要的绝缘区域来形成氮化物膜并且与半导体区域相邻，相对于氮化物膜进行氧化，将形成在绝缘区域上的氮化物膜的一部分转换为氧化膜，并且使形成在该半导体层上的氮化膜的一部分半导体区域作为电荷存储绝缘膜的至少一部分，在电荷存储绝缘膜上形成块绝缘膜，并在块绝缘膜上形成栅极电极膜。

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