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    • 2. 发明授权
    • Electron beam patterning method and apparatus with correction of
deflection distortion
    • 具有矫正偏转畸变的电子束图案化方法和装置
    • US4390788A
    • 1983-06-28
    • US239512
    • 1981-03-02
    • Soichiro HayashiYoshihiko Suenaga
    • Soichiro HayashiYoshihiko Suenaga
    • H01J37/304H01L21/027H01J37/00
    • H01J37/3045
    • An electron beam pattern is formed on an object while correcting the deflection distortion of electron beam upon controlling the deflection of electron beam. Prior to pattern formation, reference marks provided on the object are scanned by electron beam to measure their positions, and a processing unit determines correction data for correcting the deflection distortion through interpolation on the basis of results by interpolation. Upon actual pattern formation, data necessary for forming a pattern is corrected by the correction data to be thus produced as a deflection signal for deflecting the electron beam. As a result, the deflection distortion can precisely be corrected for even though the physical performance of the deflector system is slightly poor.
    • 电子束图案形成在物体上,同时在控制电子束的偏转的同时校正电子束的偏转畸变。 在图案形成之前,通过电子束扫描在物体上提供的参考标记以测量它们的位置,并且处理单元基于通过插值的结果,通过插值来确定用于校正偏转失真的校正数据。 在实际图案形成时,通过由此产生的校正数据来校正形成图案所需的数据,作为用于偏转电子束的偏转信号。 结果,即使偏转器系统的物理性能稍差,也能够精确地校正偏转变形。