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1. 发明授权

US07691713B2 Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film 失效
标题翻译：制造半导体器件的方法，该半导体器件能够抑制由栅极绝缘膜形成引起的掺杂沟道区域中的杂质浓度降低
公开(公告)号：US07691713B2
公开(公告)日：2010-04-06
申请号：US11767734
申请日：2007-06-25
申请人： Yoshinori Tanaka , Katsuyuki Horita , Heiji Kobayashi
发明人： Yoshinori Tanaka , Katsuyuki Horita , Heiji Kobayashi
IPC分类号： H01L21/336
CPC分类号： H01L27/10873 , H01L21/26586 , H01L27/10817 , H01L27/10894 , H01L27/10897 , H01L29/78
摘要： A method of manufacturing a semiconductor device is provided that can suppress impurity concentration reduction in a doped channel region arising from formation of a gate insulating film. With a silicon oxide film (20) and a silicon nitride film (21) being formed, p-type impurity ions (23.sub.1, 23.sub.2) are implanted in a Y direction from diagonally above. As for an implant angle .alpha. of the ion implantation, an implant angle is adopted that satisfies the relationship tan−1 (W2/T)
摘要翻译：提供一种制造半导体器件的方法，其可以抑制由栅极绝缘膜形成引起的掺杂沟道区域中的杂质浓度降低。在形成氧化硅膜（20）和氮化硅膜（21）的情况下，沿着Y方向从对角线上方注入p型杂质离子（23,23,2）。至于植入角度。采用满足关系tan-1（W2 / T）<α＆nlE; tan-1（W1 / T）的植入角度，其中W1是第一部分（211）和第四部分（214）和第三部分（213）和第六部分（216）之间的间隔; W2是第二部分（212）和第五部分（215）之间的间隔; T是氧化硅膜（20）和氮化硅膜（21）的总膜厚。当将注入角度α控制在该范围内时，杂质离子（231,231）通过氧化硅膜（13）注入第二侧面（10A2）和第五侧面（10A5）。

2. 发明申请

US20070243687A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CAPABLE OF SUPPRESSING IMPURITY CONCENTRATION REDUCTION IN DOPED CHANNEL REGION ARISING FROM FORMATION OF GATE INSULTING FILM 失效
标题翻译：制造半导体器件的方法，其能够抑制由形成绝缘膜形成的掺杂通道区域中的浓度浓度降低
公开(公告)号：US20070243687A1
公开(公告)日：2007-10-18
申请号：US11767734
申请日：2007-06-25
申请人： Yoshinori Tanaka , Katsuyuki Horita , Heiji Kobayashi
发明人： Yoshinori Tanaka , Katsuyuki Horita , Heiji Kobayashi
IPC分类号： H01L21/336
CPC分类号： H01L27/10873 , H01L21/26586 , H01L27/10817 , H01L27/10894 , H01L27/10897 , H01L29/78
摘要： A method of manufacturing a semiconductor device is provided that can suppress impurity concentration reduction in a doped channel region arising from formation of a gate insulating film. With a silicon oxide film (20) and a silicon nitride film (21) being formed, p-type impurity ions (23.sub.1, 23.sub.2) are implanted in a Y direction from diagonally above. As for an implant angle .alpha. of the ion implantation, an implant angle is adopted that satisfies the relationship tan−1 (W2/T)
摘要翻译：提供一种制造半导体器件的方法，其可以抑制由栅极绝缘膜形成引起的掺杂沟道区域中的杂质浓度降低。在形成有氧化硅膜（20）和氮化硅膜（21）的情况下，将p型杂质离子（23,2,2,3 ...）从对角线方向注入Y方向。至于植入角度。的离子注入，采用满足tan <-1≤（W 2 / T）<α<= TAN-1（W 1 / T）的关系的注入角度，其中W 1是第一部分（21 <1> 1）和第四部分（21 <4>）之间的间隔，以及第三部分（21,33）之间的间隔）和第六部分（21×6）; W 2是第二部分（21 ... 2）与第五部分（21 ... 5）之间的间隔; T是氧化硅膜（20）和氮化硅膜（21）的总膜厚。当将注入角度α控制在该范围内时，杂质离子（23×1，23×1）被注入到第二侧表面（10A / SUB>）和通过氧化硅膜（13）的第五侧表面（10 A 5 S）。

3. 发明申请

US20100190306A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CAPABLE OF SUPPRESSING IMPURITY CONCENTRATION REDUCTION IN DOPED CHANNEL REGION ARISING FROM FORMATION OF GATE INSULATING FILM 审中-公开
标题翻译：制造半导体器件的方法，其能够抑制由形成绝缘膜形成的掺杂通道区域中的浓度浓度降低
公开(公告)号：US20100190306A1
公开(公告)日：2010-07-29
申请号：US12754097
申请日：2010-04-05
申请人： Yoshinori Tanaka , Katsuyuki Horita , Heiji Kobayashi
发明人： Yoshinori Tanaka , Katsuyuki Horita , Heiji Kobayashi
IPC分类号： H01L21/336 , H01L21/02
CPC分类号： H01L27/10873 , H01L21/26586 , H01L27/10817 , H01L27/10894 , H01L27/10897 , H01L29/78
摘要： A method of manufacturing a semiconductor device is provided that can suppress impurity concentration reduction in a doped channel region arising from formation of a gate insulating film. With a silicon oxide film and a silicon nitride film being formed, p-type impurity ions are implanted in a Y direction from diagonally above. As for an implant angle α of the ion implantation, an implant angle is adopted that satisfies the relationship tan−1 (W2/T)
摘要翻译：提供一种制造半导体器件的方法，其可以抑制由栅极绝缘膜形成引起的掺杂沟道区域中的杂质浓度降低。在形成氧化硅膜和氮化硅膜的情况下，在对角上方沿Y方向注入p型杂质离子。对于离子注入的注入角度α，采用满足关系tan-1（W2 / T）<α＆nlE; tan-1（W1 / T）的植入角度，其中W1是第一部分和第四部分和第三部分和第六部分之间的间隔; W2是第二部分和第五部分之间的间隔; T是氧化硅膜和氮化硅膜的总膜厚。当将注入角度α控制在该范围内时，杂质离子通过氧化硅膜注入第二侧表面和第五侧表面。

4. 发明授权

US06998319B2 Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film 失效
公开(公告)号：US06998319B2
公开(公告)日：2006-02-14
申请号：US10730099
申请日：2003-12-09
申请人： Yoshinori Tanaka , Katsuyuki Horita , Heiji Kobayashi
发明人： Yoshinori Tanaka , Katsuyuki Horita , Heiji Kobayashi
IPC分类号： H01L21/336
CPC分类号： H01L27/10873 , H01L21/26586 , H01L27/10817 , H01L27/10894 , H01L27/10897 , H01L29/78
摘要： A method of manufacturing a semiconductor device is provided that can suppress impurity concentration reduction in a doped channel region arising from formation of a gate insulating film. With a silicon oxide film (20) and a silicon nitride film (21) being formed, p-type impurity ions (231, 232) are implanted in a Y direction from diagonally above. As for an implant angle α of the ion implantation, an implant angle is adopted that satisfies the relationship tan−1(W2/T)

5. 发明申请

US20060079061A1 Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film 有权
标题翻译：制造半导体器件的方法，该半导体器件能够抑制由栅极绝缘膜形成引起的掺杂沟道区域中的杂质浓度降低
公开(公告)号：US20060079061A1
公开(公告)日：2006-04-13
申请号：US11292360
申请日：2005-12-02
申请人： Yoshinori Tanaka , Katsuyuki Horita , Heiji Kobayashi
发明人： Yoshinori Tanaka , Katsuyuki Horita , Heiji Kobayashi
IPC分类号： H01L21/336
CPC分类号： H01L27/10873 , H01L21/26586 , H01L27/10817 , H01L27/10894 , H01L27/10897 , H01L29/78
摘要： A method of manufacturing a semiconductor device is provided that can suppress impurity concentration reduction in a doped channel region arising from formation of a gate insulating film. With a silicon oxide film (20) and a silicon nitride film (21) being formed, p-type impurity ions (231, 232) are implanted in a Y direction from diagonally above. As for an implant angle α of the ion implantation, an implant angle is adopted that satisfies the relationship tan−1(W2/T)
摘要翻译：提供一种制造半导体器件的方法，其可以抑制由栅极绝缘膜形成引起的掺杂沟道区域中的杂质浓度降低。在形成氧化硅膜（20）和氮化硅膜（21）的情况下，将p型杂质离子（23×23×23×2×××××××××××××）方向从对角线上方。对于离子注入的注入角度α，采用满足关系tanθ-1（W 2 / T）<α<= TAN 的注入角度（W 1 / T），其中W 1是第一部分（21 <1> 1）与第四部分（21 <4>）之间的间隔，第三部分（21,33）和第六部分（21×6）; W 2是第二部分（21 ... 2）与第五部分（21 ... 5）之间的间隔; T是氧化硅膜（20）和氮化硅膜（21）的总膜厚。当将注入角度α控制在该范围内时，将杂质离子（23,23,23）注入到第二侧表面（10 A 2 / SUB>）和通过氧化硅膜（13）的第五侧表面（10 A 5 S）。

6. 发明授权

US07244655B2 Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film 有权
标题翻译：制造半导体器件的方法，该半导体器件能够抑制由栅极绝缘膜形成引起的掺杂沟道区域中的杂质浓度降低
公开(公告)号：US07244655B2
公开(公告)日：2007-07-17
申请号：US11292360
申请日：2005-12-02
申请人： Yoshinori Tanaka , Katsuyuki Horita , Heiji Kobayashi
发明人： Yoshinori Tanaka , Katsuyuki Horita , Heiji Kobayashi
IPC分类号： H01L21/336
CPC分类号： H01L27/10873 , H01L21/26586 , H01L27/10817 , H01L27/10894 , H01L27/10897 , H01L29/78
摘要： A method of manufacturing a semiconductor device is provided that can suppress impurity concentration reduction in a doped channel region arising from formation of a gate insulating film. With a silicon oxide film (20) and a silicon nitride film (21) being formed, p-type impurity ions (231, 232) are implanted in a Y direction from diagonally above. As for an implant angle α of the ion implantation, an implant angle is adopted that satisfies the relationship tan−1(W2/T)
摘要翻译：提供一种制造半导体器件的方法，其可以抑制由栅极绝缘膜形成引起的掺杂沟道区域中的杂质浓度降低。在形成氧化硅膜（20）和氮化硅膜（21）的情况下，将p型杂质离子（23×23×23×2×××××××××××××）方向从对角线上方。对于离子注入的注入角度α，采用满足关系tanθ-1（W 2 / T）<α<= TAN 的注入角度（W 1 / T），其中W 1是第一部分（21 <1> 1）与第四部分（21 <4>）之间的间隔，第三部分（21,33）和第六部分（21×6）; W 2是第二部分（21 ... 2）与第五部分（21 ... 5）之间的间隔; T是氧化硅膜（20）和氮化硅膜（21）的总膜厚。当将注入角度α控制在该范围内时，将杂质离子（23,23,23）注入到第二侧表面（10 A 2 / SUB>）和通过氧化硅膜（13）的第五侧表面（10 A 5 S）。

7. 发明授权

US09593587B2 Turbine seal fin leakage flow rate control 有权
标题翻译：涡轮密封翅片泄漏流量控制
公开(公告)号：US09593587B2
公开(公告)日：2017-03-14
申请号：US13580078
申请日：2011-01-27
申请人： Kazuyuki Matsumoto , Yoshihiro Kuwamura , Hiroharu Oyama , Yoshinori Tanaka , Asaharu Matsuo
发明人： Kazuyuki Matsumoto , Yoshihiro Kuwamura , Hiroharu Oyama , Yoshinori Tanaka , Asaharu Matsuo
IPC分类号： F01D11/00 , F01D11/08 , F16J15/447 , F01D11/02
CPC分类号： F01D11/001 , F01D11/02 , F01D11/08 , F05D2220/31 , F05D2240/127 , F05D2240/55 , F16J15/447
摘要： Provided is a turbine in which seal fins (15) are provided to a hub shroud (41) to protrude toward a bottom surface (33a) of an annular groove (33), small gaps (H) are formed between the tip ends of the seal fins and the bottom surface of the annular groove, and assuming that the axial distance between a first seal fin (15a) disposed on the front edge side of the hub shroud among the seal fins and a front edge (41a) of the hub shroud is (L) and the axial distance between the front edge of the hub shroud and an inside surface (33b) of the annular groove is (Bu), the first seal fin is disposed to satisfy L/Bu
摘要翻译：本发明提供一种涡轮机，其中，密封翅片（15）设置在轮毂护罩（41）上，朝向环状槽（33）的底面（33a）突出，在密封翅片和环形槽的底面，并且假设设置在密封翅片之间的轮毂罩的前边缘侧的第一密封翅片（15a）与轮毂罩的前边缘（41a）之间的轴向距离是（L），轮毂罩的前缘与环状槽的内侧面（33b）之间的轴向距离为（Bu），第一密封翅片设置为满足L / Bu <0.3。

8. 发明授权

US09542562B2 Display system, display method, display terminal and non-transitory computer-readable recording medium stored with display program 有权
标题翻译：显示系统，显示方法，显示终端和存储有显示程序的非暂时性计算机可读记录介质
公开(公告)号：US09542562B2
公开(公告)日：2017-01-10
申请号：US14253715
申请日：2014-04-15
申请人： Yasuyuki Kamai , Yoshinori Tanaka
发明人： Yasuyuki Kamai , Yoshinori Tanaka
IPC分类号： H04L29/06 , G06F21/60 , G06F3/14 , G09G5/14
CPC分类号： G06F21/604 , G06F3/14 , G09G5/14 , G09G2370/16
摘要： A display system for displaying a document includes a tablet terminal and a head mounted display device (HMD). The tablet terminal includes a display device which does not display confidential information that a third party is not allowed to browse, but displays non-confidential information that the third party is allowed to browse with regard to the document. The HMD includes a glasses-type display unit which does not allow the third party to browse, but allows a HMD user to browse, a communication unit which receives the confidential information, and a video camera for capturing the non-confidential information displayed on the display device. The glasses-type display unit, based on the captured non-confidential information, displays the received confidential information so that the received confidential information is visually recognized by the HMD user in a state of being aligned with the non-confidential information displayed on the display device.
摘要翻译：用于显示文档的显示系统包括平板电脑终端和头戴式显示设备（HMD）。平板电脑终端包括不显示不允许第三方浏览的机密信息的显示装置，但是显示关于文档允许第三方浏览的非机密信息。 HMD包括不允许第三方浏览但允许HMD用户浏览接收机密信息的通信单元的眼镜型显示单元和用于捕获显示在其上的非机密信息的摄像机显示设备。眼镜型显示单元基于所捕获的非机密信息，显示接收到的机密信息，使得HMD用户在与显示在显示器上的非机密信息对齐的状态下视觉识别所接收到的机密信息设备。

9. 发明授权

US09319949B2 Communication setting method, wireless base station, and mobile station 有权
标题翻译：通信设置方法，无线基站，移动台
公开(公告)号：US09319949B2
公开(公告)日：2016-04-19
申请号：US13751979
申请日：2013-01-28
申请人： Yoshinori Tanaka
发明人： Yoshinori Tanaka
IPC分类号： H04W36/00 , H04W36/02 , H04B7/02 , H04W36/18
CPC分类号： H04W36/02 , H04B7/024 , H04W36/0055 , H04W36/18
摘要： In a mobile communication system in an embodiment, when a handover of a mobile station which is a target of coordinated communications among multiple wireless base stations is detected, at least a part of setting procedure for the coordinated communications (CoMP setting procedure) is executed before completion of the handover. Hence, the coordinated transmission for the mobile station can be resumed earlier after the handover, and any reduction in the communication quality or throughput caused by the resume of the coordinated communication after the handover of the mobile station can be prevented.
摘要翻译：在实施方式的移动通信系统中，在检测到作为多个无线基站的协调通信对象的移动台的切换时，在协调通信（CoMP设定步骤）的至少一部分设定步骤之前，完成切换。因此，可以在切换之后更早地恢复移动台的协调传输，并且可以防止由移动台切换之后的协调通信的恢复引起的通信质量或吞吐量的任何降低。

10. 发明授权

US09246665B2 Transmitting apparatus, receiving apparatus, and communication method 有权
公开(公告)号：US09246665B2
公开(公告)日：2016-01-26
申请号：US13926578
申请日：2013-06-25
申请人： Yoshinori Tanaka , Yoshihiro Kawasaki
发明人： Yoshinori Tanaka , Yoshihiro Kawasaki
IPC分类号： H04W24/00 , H04L5/06 , H04L1/00 , H04L1/16 , H04W56/00 , H04L5/00
CPC分类号： H04L5/06 , H04L1/0028 , H04L1/1607 , H04L5/0007 , H04L5/0023 , H04L5/0037 , H04L5/0048 , H04L5/0053 , H04L5/0094 , H04W56/00
摘要： A transmitting apparatus is capable of transmitting data at a first frequency and second frequency to a receiving apparatus. A transmitter of the transmitting apparatus transmits a predetermined wideband signal, in a first time period in a frequency band which does not include the first frequency and in a second time period in a frequency band which does not include the second frequency. A quality measuring unit of the receiving apparatus measures the quality of communication with the transmitting apparatus based on the wideband signal received in the first and second time periods.

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