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1. 发明申请

US20120251737A1 PLASMA-NITRIDING METHOD 审中-公开
标题翻译：等离子体氮化法
公开(公告)号：US20120251737A1
公开(公告)日：2012-10-04
申请号：US13436006
申请日：2012-03-30
申请人： Yoshinori OSAKI , Takeshi Kuroda
发明人： Yoshinori OSAKI , Takeshi Kuroda
IPC分类号： C23C16/511
CPC分类号： H01L29/4983 , C23C16/345 , C23C16/45542 , C23C16/45546 , C23C16/56 , H01J37/32192 , H01J2237/3387 , H01L21/0217 , H01L21/0228 , H01L21/02329 , H01L21/0234 , H01L21/3105 , H01L29/78
摘要： A plasma-nitriding method for plasma-nitriding a silicon nitride film includes loading a target object into a processing chamber and mounting the target object on a mounting table; heating the target object; supplying a processing gas containing a nitrogen-containing gas and a rare gas into the processing chamber while introducing a microwave into the processing chamber, generating an electric field in the processing chamber, and generating a plasma by exciting the processing gas; and plasma-nitriding and modifying a silicon nitride film formed on the target object by the generated plasma. The silicon nitride film is a silicon nitride film formed at a film forming temperature ranging from 200° C. to 400° C. by an ALD method, and the silicon nitride film is plasma-nitrided at a processing temperature whose maximum is equal to the film forming temperature in the ALD method to form a silicon nitride film modified by a low-temperature nitrogen-containing plasma.
摘要翻译：用于等离子体氮化氮化硅膜的等离子体氮化方法包括将目标物体加载到处理室中并将目标物体安装在安装台上; 加热目标物体; 将含有含氮气体和稀有气体的处理气体供给到所述处理室中，同时将微波引入所述处理室，在所述处理室中产生电场，并通过激励所述处理气体产生等离子体; 并通过所产生的等离子体等离子体氮化和改性在目标物体上形成的氮化硅膜。氮化硅膜是通过ALD法在200℃至400℃的膜形成温度下形成的氮化硅膜，并且氮化硅膜在最大等于（等于）的处理温度下等离子体氮化成膜温度在ALD法中形成通过低温含氮等离子体改性的氮化硅膜。

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