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1. 发明授权

US08401273B2 Apparatus for evaluating degradation of pattern features 失效
标题翻译：用于评估图案特征的劣化的装置
公开(公告)号：US08401273B2
公开(公告)日：2013-03-19
申请号：US12691534
申请日：2010-01-21
申请人： Yoshinori Momonoi , Atsuko Yamaguchi , Taro Osabe
发明人： Yoshinori Momonoi , Atsuko Yamaguchi , Taro Osabe
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06T2207/10061 , G06T2207/30148
摘要： A measurement tool apparatus for evaluating degradation of pattern features in a semiconductor device manufacturing process. The measurement tool apparatus detects variations in the patterns from SEM images thereof and extracts pattern edge points along the circumference of each pattern. The measurement tool apparatus compares the pattern edge points to corresponding edge points of an ideal shape so as to determine deviation of the patterns. Metrics are derived from analysis of the deviations. The measurement tool apparatus uses the metrics in calculating an index representative of the geometry of edge spokes of the pattern, an indicator of the orientation of the edge spokes, and/or anticipated effects of the edge spokes on device performance.
摘要翻译：一种用于评估半导体器件制造工艺中的图案特征的劣化的测量工具装置。测量工具装置从其SEM图像检测图案的变化，并且沿着每个图案的圆周提取图案边缘点。测量工具装置将图案边缘点与理想形状的对应边缘点进行比较，以确定图案的偏差。指标来源于偏差分析。测量工具装置使用度量来计算表示图案的边缘辐条的几何形状的指标，边缘辐条的取向的指示符和/或边缘辐条对设备性能的预期效果。

2. 发明申请

US20080042193A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20080042193A1
公开(公告)日：2008-02-21
申请号：US11896800
申请日：2007-09-06
申请人： Taro Osabe , Tomoyuki Ishii , Kazuo Yano , Takashi Kobayashi
发明人： Taro Osabe , Tomoyuki Ishii , Kazuo Yano , Takashi Kobayashi
IPC分类号： H01L29/792
CPC分类号： H01L27/11521 , B82Y10/00 , G11C16/0433 , G11C16/0458 , G11C16/0483 , G11C16/0491 , G11C16/10 , G11C16/26 , G11C2216/06 , H01L27/115 , H01L29/42332 , H01L29/42348 , H01L29/7887
摘要： For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.
摘要翻译：为了通过电池级提供具有提高可靠性的便宜的半导体存储器件，以代替通过诸如ECC的电存储器单元中的缺陷脱离，并且还用于提供能够在垂直方向上按比例缩小的单元结构，同时保持在需要高速读出操作的半导体存储器件中的可靠性，电荷存储区域由大量半导体电荷存储小区域制成的粒子构成，各自独立，从而通过细胞水平。

3. 发明授权

US07078762B2 Semiconductor memory device and method for producing the same 失效
公开(公告)号：US07078762B2
公开(公告)日：2006-07-18
申请号：US10883738
申请日：2004-07-06
申请人： Tomoyuki Ishii , Taro Osabe , Hideaki Kurata , Takeshi Sakata
发明人： Tomoyuki Ishii , Taro Osabe , Hideaki Kurata , Takeshi Sakata
IPC分类号： H01L29/788
CPC分类号： H01L27/11568 , B82Y10/00 , G11C11/5621 , G11C11/5671 , G11C16/0433 , G11C16/0458 , G11C16/0475 , G11C16/0491 , G11C2216/06 , H01L27/115 , H01L27/11521
摘要： Disclosed is a non-volatile semiconductor memory device that uses a inversion layer provided on a semiconductor substrate as a data line. The memory device can reduce variation of characteristics among memory cells and can reduce bit cost. A plurality of assist gates are formed in the upper part of a p-type well through a gate oxide film. In the upper part of an interlayer insulator that covers those assist gates are formed word lines that are used as control electrodes. The width of those word lines is, for example, 0.1 μm, and each word line is separated from its adjacent word lines by a side wall spacer that is a silicon oxide film having a thickness of about 20 nm.

4. 发明申请

US20050237786A1 Semiconductor memories 审中-公开
标题翻译：半导体存储器
公开(公告)号：US20050237786A1
公开(公告)日：2005-10-27
申请号：US11155780
申请日：2005-06-20
申请人： Bryan Atwood , Kazuo Yano , Tomoyuki Ishii , Taro Osabe , Kazumasa Yanagisawa , Takeshi Sakata
发明人： Bryan Atwood , Kazuo Yano , Tomoyuki Ishii , Taro Osabe , Kazumasa Yanagisawa , Takeshi Sakata
IPC分类号： G11C11/00 , G11C11/401 , G11C11/405 , G11C11/406 , G11C11/4076 , H01L21/8242 , H01L27/105 , H01L27/108 , H01L27/12
CPC分类号： H01L27/105 , G11C11/405 , G11C11/406 , G11C11/4076 , G11C2207/2281 , G11C2207/229 , H01L27/0207 , H01L27/108 , H01L27/1203
摘要： A high integration dynamic random access memory is provided by this invention. Furthermore, a write method is provided such that cell size of two-and three-transistor gain cell memories is reduced. A dynamic memory incorporating a thin-channel transistor as the write element such that long data storage retention is achieved in the memory devices of this invention. A dynamic memory cell having low operating power and high density is also realized by this invention.
摘要翻译：本发明提供了高集成度的动态随机存取存储器。此外，提供了一种写入方法，使得减小了二晶体管和三晶体管增益单元存储器的单元尺寸。一种结合了作为写入元件的薄沟道晶体管的动态存储器，使得在本发明的存储器件中实现长的数据存储保持。通过本发明也实现了具有低操作功率和高密度的动态存储单元。

5. 发明授权

US06849895B2 Semiconductor non-volatile memory 有权
公开(公告)号：US06849895B2
公开(公告)日：2005-02-01
申请号：US09944073
申请日：2001-09-04
申请人： Taro Osabe , Tomoyuki Ishii , Kazuo Yano , Takashi Kobayashi
发明人： Taro Osabe , Tomoyuki Ishii , Kazuo Yano , Takashi Kobayashi
IPC分类号： G11C16/04 , G11C16/10 , G11C16/26 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792 , H01L27/108
CPC分类号： H01L27/11521 , B82Y10/00 , G11C16/0433 , G11C16/0458 , G11C16/0483 , G11C16/0491 , G11C16/10 , G11C16/26 , G11C2216/06 , H01L27/115 , H01L29/42332 , H01L29/42348 , H01L29/7887
摘要： For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.

6. 发明授权

US09310447B2 Magnetic field measuring apparatus and method for manufacturing same 有权
标题翻译：磁场测量装置及其制造方法
公开(公告)号：US09310447B2
公开(公告)日：2016-04-12
申请号：US14358810
申请日：2011-11-18
申请人： Yudai Kamada , Taro Osabe , Seiichi Suzuki , Akihiko Kandori , Ryuzo Kawabata
发明人： Yudai Kamada , Taro Osabe , Seiichi Suzuki , Akihiko Kandori , Ryuzo Kawabata
IPC分类号： G01R3/00 , G01R33/032 , G01R33/26
CPC分类号： G01R33/0322 , G01R3/00 , G01R33/26 , Y10T29/49002
摘要： In order to provide a magnetic field measuring apparatus facilitating the pressure control in a gas cell, or capable of inspecting the internal pressure of the gas cell without using any special process, the magnetic field measuring apparatus is configured such that a process layer of the magnetic field measuring apparatus has such a structure that includes a first hollow portion and a second hollow portion provided opposed to first hollow portion with a first isolation wall interposed therebetween. Alternatively, a method for manufacturing the magnetic field measuring apparatus includes breaking the first isolation wall after generating alkali metal (FIG. 17 and FIG. 20).
摘要翻译：为了提供便于气室中的压力控制的磁场测量装置，或者能够在不使用任何特殊处理的情况下检查气室的内部压力，磁场测量装置被配置为使得磁性体的处理层现场测量装置具有这样的结构，其包括第一中空部分和与第一中空部分相对设置的第二中空部分，其间插入有第一隔离壁。或者，制造磁场测量装置的方法包括在产生碱金属之后破坏第一隔离壁（图17和图20）。

7. 发明申请

US20110169070A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110169070A1
公开(公告)日：2011-07-14
申请号：US13072211
申请日：2011-03-25
申请人： Taro Osabe , Tomoyuki Ishii , Kazuo Yano , Takashi Kobayashi
发明人： Taro Osabe , Tomoyuki Ishii , Kazuo Yano , Takashi Kobayashi
IPC分类号： H01L27/088
CPC分类号： H01L27/11521 , B82Y10/00 , G11C16/0433 , G11C16/0458 , G11C16/0483 , G11C16/0491 , G11C16/10 , G11C16/26 , G11C2216/06 , H01L27/115 , H01L29/42332 , H01L29/42348 , H01L29/7887
摘要： For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.
摘要翻译：为了通过电池级提供具有提高可靠性的便宜的半导体存储器件，以代替通过诸如ECC的电存储器单元中的缺陷脱离，并且还用于提供能够在垂直方向上按比例缩小的单元结构，同时保持在需要高速读出操作的半导体存储器件中的可靠性，电荷存储区域由大量半导体电荷存储小区域制成的粒子构成，各自独立，从而通过细胞水平。

8. 发明授权

US07622766B2 Semiconductor memory device and method for producing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07622766B2
公开(公告)日：2009-11-24
申请号：US11808228
申请日：2007-06-07
申请人： Tomoyuki Ishii , Taro Osabe , Hideaki Kurata , Takeshi Sakata
发明人： Tomoyuki Ishii , Taro Osabe , Hideaki Kurata , Takeshi Sakata
IPC分类号： H01L29/788
CPC分类号： H01L27/11568 , B82Y10/00 , G11C11/5621 , G11C11/5671 , G11C16/0433 , G11C16/0458 , G11C16/0475 , G11C16/0491 , G11C2216/06 , H01L27/115 , H01L27/11521
摘要： Disclosed is a non-volatile semiconductor memory device that uses a inversion layer provided on a semiconductor substrate as a data line. The memory device can reduce variation of characteristics among memory cells and can reduce bit cost. A plurality of assist gates are formed in the upper part of a p-type well through a gate oxide film. In the upper part of an interlayer insulator that covers those assist gates are formed word lines that are used as control electrodes. The width of those word lines is, for example, 0.1 μm, and each word line is separated from its adjacent word lines by a side wall spacer that is a silicon oxide film having a thickness of about 20 nm.
摘要翻译：公开了使用设置在半导体衬底上的反转层作为数据线的非易失性半导体存储器件。存储器件可以减少存储器单元之间的特性变化并且可以降低位成本。多个辅助栅极通过栅极氧化膜形成在p型阱的上部。在覆盖这些辅助栅极的层间绝缘体的上部形成用作控制电极的字线。这些字线的宽度例如为0.1μm，并且每个字线通过作为厚度为约20nm的氧化硅膜的侧壁间隔物与其相邻字线分开。

9. 发明授权

US06815763B2 Semiconductor memory element, semiconductor device and control method thereof 有权
标题翻译：半导体存储元件，半导体器件及其控制方法
公开(公告)号：US06815763B2
公开(公告)日：2004-11-09
申请号：US10082205
申请日：2002-02-26
申请人： Taro Osabe , Tomoyuki Ishii
发明人： Taro Osabe , Tomoyuki Ishii
IPC分类号： H01L29792
CPC分类号： H01L29/42332 , G11C16/0408 , H01L21/28273 , H01L27/115 , H01L29/7885
摘要： In a semiconductor flash memory required to have high reliability, injection and extraction of electrons must be performed through an oxide film obtained by directly oxidizing a silicon substrate. Accordingly, the voltage to be used is a large voltage ranging from positive to negative one. In contrast, by storing charges in a plurality of dispersed regions, high reliability is achieved. Based on the high reliability, transfer of electrons is permitted through not only the oxide film obtained by directly thermally oxidizing a high reliability silicon substrate but also another oxide film deposited by CVD, or the like. In consequence, a device is controlled by electric potentials of the same polarity upon writing of data and upon erasing of data.

10. 发明申请

US20140306700A1 MAGNETIC FIELD MEASURING APPARATUS AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：磁场测量装置及其制造方法
公开(公告)号：US20140306700A1
公开(公告)日：2014-10-16
申请号：US14358810
申请日：2011-11-18
申请人： Yudai Kamada , Taro Osabe , Seiichi Suzuki , Akihiko Kandori , Ryuzo Kawabata
发明人： Yudai Kamada , Taro Osabe , Seiichi Suzuki , Akihiko Kandori , Ryuzo Kawabata
IPC分类号： G01R33/032 , G01R3/00
CPC分类号： G01R33/0322 , G01R3/00 , G01R33/26 , Y10T29/49002
摘要： In order to provide a magnetic field measuring apparatus facilitating the pressure control in a gas cell, or capable of inspecting the internal pressure of the gas cell without using any special process, the magnetic field measuring apparatus is configured such that a process layer of the magnetic field measuring apparatus has such a structure that includes a first hollow portion and a second hollow portion provided opposed to first hollow portion with a first isolation wall interposed therebetween. Alternatively, a method for manufacturing the magnetic field measuring apparatus includes breaking the first isolation wall after generating alkali metal (FIG. 17 and FIG. 20).
摘要翻译：为了提供便于气室中的压力控制的磁场测量装置，或者能够在不使用任何特殊处理的情况下检查气室的内部压力，磁场测量装置被配置为使得磁性体的处理层现场测量装置具有这样的结构，其包括第一中空部分和与第一中空部分相对设置的第二中空部分，其间插入有第一隔离壁。或者，制造磁场测量装置的方法包括在产生碱金属之后破坏第一隔离壁（图17和图20）。

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