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1. 发明申请

US20090098719A1 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US20090098719A1
公开(公告)日：2009-04-16
申请号：US12188676
申请日：2008-08-08
申请人： Yoshinori MATSUNO , Kenichi Ohtsuka , Kenichi Kuroda , Shozo Shikama , Naoki Yutani
发明人： Yoshinori MATSUNO , Kenichi Ohtsuka , Kenichi Kuroda , Shozo Shikama , Naoki Yutani
IPC分类号： H01L21/04
CPC分类号： H01L21/0495 , H01L29/6606
摘要： An object of the invention is to provide a method for manufacturing a silicon carbide semiconductor device having constant characteristics with reduced variations in forward characteristics. The method for manufacturing the silicon carbide semiconductor device according to the invention includes the steps of: (a) preparing a silicon carbide substrate; (b) forming an epitaxial layer on a first main surface of the silicon carbide substrate; (c) forming a protective film on the epitaxial layer; (d) forming a first metal layer on a second main surface of the silicon carbide substrate; (e) applying heat treatment to the silicon carbide substrate at a predetermined temperature to form an ohmic junction between the first metal layer and the second main surface of the silicon carbide substrate; (f) removing the protective film; (g) forming a second metal layer on the epitaxial layer; and (h) applying heat treatment to the silicon carbide substrate at a temperature from 400° C. to 600° C. to form a Schottky junction of desired characteristics between the second metal layer and the epitaxial layer.
摘要翻译：本发明的目的是提供一种制造具有恒定特性并减小正向特性变化的碳化硅半导体器件的方法。根据本发明的制造碳化硅半导体器件的方法包括以下步骤：（a）制备碳化硅衬底; （b）在所述碳化硅衬底的第一主表面上形成外延层; （c）在外延层上形成保护膜; （d）在所述碳化硅衬底的第二主表面上形成第一金属层; （e）在预定温度下对所述碳化硅衬底进行热处理以在所述第一金属层和所述碳化硅衬底的所述第二主表面之间形成欧姆结; （f）去除保护膜; （g）在所述外延层上形成第二金属层; 和（h）在400℃至600℃的温度下对所述碳化硅衬底进行热处理以在所述第二金属层和所述外延层之间形成所需特性的肖特基结。

2. 发明申请

US20120302051A1 MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：碳化硅半导体器件的制造方法
公开(公告)号：US20120302051A1
公开(公告)日：2012-11-29
申请号：US13355710
申请日：2012-01-23
申请人： Yoshinori MATSUNO , Yoichiro Tarui
发明人： Yoshinori MATSUNO , Yoichiro Tarui
IPC分类号： H01L21/329
CPC分类号： H01L29/1608 , H01L21/0465 , H01L21/0485 , H01L29/0615 , H01L29/0619 , H01L29/6606 , H01L29/872
摘要： A silicon oxide film is formed on an epitaxial layer by dry thermal oxidation, an ohmic electrode is formed on a back surface of a SiC substrate, an ohmic junction is formed between the ohmic electrode and the back surface of the SiC substrate by annealing the SiC substrate, the silicon oxide film is removed, and a Schottky electrode is formed on the epitaxial layer. Then, a sintering treatment is performed to form a Schottky junction between the Schottky electrode and the epitaxial layer.
摘要翻译：通过干热氧化在外延层上形成氧化硅膜，在SiC衬底的背面上形成欧姆电极，在SiC衬底的欧姆电极和背面之间形成欧姆接头，退火SiC 衬底，除去氧化硅膜，在外延层上形成肖特基电极。然后，进行烧结处理以在肖特基电极和外延层之间形成肖特基结。

3. 发明申请

US20130234160A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：US20130234160A1
公开(公告)日：2013-09-12
申请号：US13735095
申请日：2013-01-07
申请人： Yoshinori MATSUNO
发明人： Yoshinori MATSUNO
IPC分类号： H01L29/16 , H01L21/78
CPC分类号： H01L29/1608 , H01L21/045 , H01L21/78 , H01L23/293 , H01L23/3185 , H01L24/03 , H01L24/05 , H01L24/06 , H01L29/6606 , H01L29/872 , H01L2224/02166 , H01L2224/0345 , H01L2224/0381 , H01L2224/0382 , H01L2224/04042 , H01L2224/05155 , H01L2224/05166 , H01L2224/0518 , H01L2224/05184 , H01L2224/05564 , H01L2224/05567 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/06181 , H01L2224/94 , H01L2924/00014 , H01L2924/10272 , H01L2924/12032 , H01L2924/12042 , H01L2924/13052 , H01L2924/1306 , H01L2924/13091 , H01L2224/03 , H01L2924/00 , H01L2224/05552
摘要： The present invention includes an n+ type substrate, a drift epitaxial layer formed on the n+ type substrate and having a lower concentration of impurity than the n+ type substrate, a Schottky electrode formed on the drift epitaxial layer, and a PI formed as an insulating film by covering at least an end of the Schottky electrode and an end and a side surface of the drift epitaxial layer.
摘要翻译：本发明包括n +型衬底，形成在n +型衬底上并具有比n +型衬底低的杂质浓度的漂移外延层，形成在漂移外延层上的肖特基电极和形成为绝缘膜的PI 通过覆盖肖特基电极的至少一端和漂移外延层的端面和侧面。

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