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1. 发明申请

US20090116528A1 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US20090116528A1
公开(公告)日：2009-05-07
申请号：US12285337
申请日：2008-10-02
申请人： Yoshinobu Kawaguchi , Takeshi Kamikawa , Shigetoshi Ito
发明人： Yoshinobu Kawaguchi , Takeshi Kamikawa , Shigetoshi Ito
IPC分类号： H01S5/04
CPC分类号： H01S5/32341 , H01S5/028 , H01S5/0287 , H01S5/2214 , H01S5/3202
摘要： A nitride semiconductor laser device has a multilayer structure formed by stacking a plurality of nitride semiconductor layers made of hexagonal nitride semiconductors, while the multilayer structure is provided with a waveguide structure for guiding a laser beam, the nitride semiconductor layers forming the multilayer structure are stacked in a direction substantially perpendicular to the c-axes of the hexagonal nitride semiconductors constituting the nitride semiconductor layers, a first cavity facet forming a side surface of the waveguide structure is a c-plane having Ga-polarity, a second cavity facet forming another side surface of the waveguide structure opposed to the first cavity facet is a c-plane having N-polarity, a crystalline nitrogen-containing film is formed on the surface of the first cavity facet, and the reflectance of the first cavity facet is smaller than the reflectance of the second cavity facet.
摘要翻译：氮化物半导体激光器件具有通过堆叠由六方氮化物半导体制成的多个氮化物半导体层而形成的多层结构，而多层结构设置有用于引导激光束的波导结构，形成多层结构的氮化物半导体层被堆叠在与构成氮化物半导体层的六方氮化物半导体的c轴大致垂直的方向上，形成波导结构的侧面的第一空腔面是具有Ga极性的c面，形成另一侧的第二腔面与第一腔面相对的波导结构的表面是具有N极性的c面，在第一腔面的表面上形成结晶含氮膜，第一腔面的反射率小于第二腔面的反射率。

2. 发明授权

US07792172B2 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US07792172B2
公开(公告)日：2010-09-07
申请号：US12285337
申请日：2008-10-02
申请人： Yoshinobu Kawaguchi , Takeshi Kamikawa , Shigetoshi Ito
发明人： Yoshinobu Kawaguchi , Takeshi Kamikawa , Shigetoshi Ito
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , H01S5/028 , H01S5/0287 , H01S5/2214 , H01S5/3202
摘要： A nitride semiconductor laser device has a multilayer structure formed by stacking a plurality of nitride semiconductor layers made of hexagonal nitride semiconductors, while the multilayer structure is provided with a waveguide structure for guiding a laser beam, the nitride semiconductor layers forming the multilayer structure are stacked in a direction substantially perpendicular to the c-axes of the hexagonal nitride semiconductors constituting the nitride semiconductor layers, a first cavity facet forming a side surface of the waveguide structure is a c-plane having Ga-polarity, a second cavity facet forming another side surface of the waveguide structure opposed to the first cavity facet is a c-plane having N-polarity, a crystalline nitrogen-containing film is formed on the surface of the first cavity facet, and the reflectance of the first cavity facet is smaller than the reflectance of the second cavity facet.
摘要翻译：氮化物半导体激光器件具有通过堆叠由六方氮化物半导体制成的多个氮化物半导体层而形成的多层结构，而多层结构设置有用于引导激光束的波导结构，形成多层结构的氮化物半导体层被堆叠在与构成氮化物半导体层的六方氮化物半导体的c轴大致垂直的方向上，形成波导结构的侧面的第一空腔面是具有Ga极性的c面，形成另一侧的第二腔面与第一腔面相对的波导结构的表面是具有N极性的c面，在第一腔面的表面上形成结晶含氮膜，第一腔面的反射率小于第二腔面的反射率。

3. 发明授权

US07579627B2 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体发光元件及其制造方法以及半导体光学装置
公开(公告)号：US07579627B2
公开(公告)日：2009-08-25
申请号：US11435932
申请日：2006-05-18
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01L31/12
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
摘要翻译：氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜和位于其顶部的氮化物半导体层。氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层，易于显示p型导电性，以及条状激光波导区域。激光波导区域形成在低位错区域的上方。这有助于实现提供更长寿命的氮化物半导体激光器件。

4. 发明申请

US20080283866A1 Nitride semiconductor light-emitting device and method for producing same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20080283866A1
公开(公告)日：2008-11-20
申请号：US12216533
申请日：2008-07-07
申请人： Teruyoshi Takakura , Shigetoshi Ito , Takeshi Kamikawa
发明人： Teruyoshi Takakura , Shigetoshi Ito , Takeshi Kamikawa
IPC分类号： H01L33/00
CPC分类号： H01S5/3202 , B82Y20/00 , H01L33/007 , H01S5/0202 , H01S5/0207 , H01S5/0211 , H01S5/0425 , H01S5/2201 , H01S5/2214 , H01S5/34333
摘要： In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.
摘要翻译：在本发明的氮化物半导体发光元件的制造方法中，首先，准备形成有槽部的氮化物半导体基板。在包括沟槽部分的侧壁的氮化物半导体衬底上形成包括氮化物半导体的下层，使得下层在每个沟槽部分中具有晶体表面，并且晶体表面以相对于基板的表面为53.5°〜63.4°。在下层之上，形成由包含Al的下包层，有源层和含有Al的上包层组成的发光器件结构。根据本发明，在氮化物半导体衬底上堆积具有氮化物半导体的发光器件结构的层时发生的厚度不均匀性和表面平坦度不足，同时抑制裂纹的发生。

5. 发明授权

US07410819B2 Nitride semiconductor light-emitting device and method for producing same 有权
公开(公告)号：US07410819B2
公开(公告)日：2008-08-12
申请号：US11296532
申请日：2005-12-08
申请人： Teruyoshi Takakura , Shigetoshi Ito , Takeshi Kamikawa
发明人： Teruyoshi Takakura , Shigetoshi Ito , Takeshi Kamikawa
IPC分类号： H01L21/20
CPC分类号： H01S5/3202 , B82Y20/00 , H01L33/007 , H01S5/0202 , H01S5/0207 , H01S5/0211 , H01S5/0425 , H01S5/2201 , H01S5/2214 , H01S5/34333
摘要： In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.

6. 发明申请

US20120274673A1 LIGHT EMITTING APPARATUS, METHOD FOR DRIVING THE LIGHT EMITTING APPARATUS, AND DISPLAY APPARATUS INCLUDING THE LIGHT EMITTING APPARATUS 失效
标题翻译：发光装置，用于驱动发光装置的方法，以及包括发光装置的显示装置
公开(公告)号：US20120274673A1
公开(公告)日：2012-11-01
申请号：US13544287
申请日：2012-07-09
申请人： Takeshi KAMIKAWA , Shigetoshi Ito , Mototaka Taneya
发明人： Takeshi KAMIKAWA , Shigetoshi Ito , Mototaka Taneya
IPC分类号： G09G5/10 , H01L33/32 , H01L33/50 , H01L33/06
CPC分类号： H05B33/0866 , G09G3/14 , G09G3/2014 , G09G3/2081 , G09G3/32 , G09G2310/0272 , G09G2320/0626 , G09G2320/0666 , G09G2330/021 , H01L2224/48091 , H01L2224/49107 , H05B33/0818 , H05B33/0821 , H05B33/086 , H01L2924/00014
摘要： A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.
摘要翻译：发光装置包括发光部分，用于发光，光的颜色以驱动电流的值改变;驱动部分，用于驱动发光部分，使得发光部分发出具有所需颜色的光并且通过基于指定期望颜色的信号和指定期望强度的信号产生驱动电流并且通过将驱动电流施加到发光部分来产生期望的强度。

7. 发明授权

US07700963B2 Nitride semiconductor light-emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07700963B2
公开(公告)日：2010-04-20
申请号：US12216533
申请日：2008-07-07
申请人： Teruyoshi Takakura , Shigetoshi Ito , Takeshi Kamikawa
发明人： Teruyoshi Takakura , Shigetoshi Ito , Takeshi Kamikawa
IPC分类号： H01L33/00
CPC分类号： H01S5/3202 , B82Y20/00 , H01L33/007 , H01S5/0202 , H01S5/0207 , H01S5/0211 , H01S5/0425 , H01S5/2201 , H01S5/2214 , H01S5/34333
摘要： In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.
摘要翻译：在本发明的氮化物半导体发光元件的制造方法中，首先，准备形成有槽部的氮化物半导体基板。在包括沟槽部分的侧壁的氮化物半导体衬底上形成包括氮化物半导体的下层，使得下层在每个沟槽部分中具有晶体表面，并且晶体表面以相对于基板的表面为53.5°〜63.4°。在下层之上，形成由包含Al的下包层，有源层和含有Al的上包层组成的发光器件结构。根据本发明，在氮化物半导体衬底上堆积具有氮化物半导体的发光器件结构的层时发生的厚度不均匀性和表面平坦度不足，同时抑制裂纹的发生。

8. 发明申请

US20070115210A1 Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus 有权
公开(公告)号：US20070115210A1
公开(公告)日：2007-05-24
申请号：US11644668
申请日：2006-12-22
申请人： Takeshi Kamikawa , Shigetoshi Ito , Mototaka Taneya
发明人： Takeshi Kamikawa , Shigetoshi Ito , Mototaka Taneya
IPC分类号： G09G3/14
CPC分类号： H05B33/0866 , G09G3/14 , G09G3/2014 , G09G3/2081 , G09G3/32 , G09G2310/0272 , G09G2320/0626 , G09G2320/0666 , G09G2330/021 , H01L2224/48091 , H01L2224/49107 , H05B33/0818 , H05B33/0821 , H05B33/086 , H01L2924/00014
摘要： A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.

9. 发明申请

US20060131590A1 Nitride semiconductor light-emitting device and method for producing same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20060131590A1
公开(公告)日：2006-06-22
申请号：US11296532
申请日：2005-12-08
申请人： Teruyoshi Takakura , Shigetoshi Ito , Takeshi Kamikawa
发明人： Teruyoshi Takakura , Shigetoshi Ito , Takeshi Kamikawa
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01S5/3202 , B82Y20/00 , H01L33/007 , H01S5/0202 , H01S5/0207 , H01S5/0211 , H01S5/0425 , H01S5/2201 , H01S5/2214 , H01S5/34333
摘要： In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.
摘要翻译：在本发明的氮化物半导体发光元件的制造方法中，首先，准备形成有槽部的氮化物半导体基板。在包括沟槽部分的侧壁的氮化物半导体衬底上形成包括氮化物半导体的下层，使得下层在每个沟槽部分中具有晶体表面，并且晶体表面以相对于基板的表面为53.5°〜63.4°。在下层之上，形成由包含Al的下包层，有源层和含有Al的上包层组成的发光器件结构。根据本发明，在氮化物半导体衬底上堆积具有氮化物半导体的发光器件结构的层时发生的厚度不均匀性和表面平坦度不足，同时抑制裂纹的发生。

10. 发明申请

US20050141577A1 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体发光元件及其制造方法以及半导体光学装置
公开(公告)号：US20050141577A1
公开(公告)日：2005-06-30
申请号：US10831659
申请日：2004-04-26
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01S5/00 , H01S5/02 , H01S5/22 , H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
摘要翻译：氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜和位于其顶部的氮化物半导体层。氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层，易于显示p型导电性，以及条状激光波导区域。激光波导区域形成在低位错区域的上方。这有助于实现提供更长寿命的氮化物半导体激光器件。

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